Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1999
12/07/1999US5999446 Multi-state flash EEprom system with selective multi-sector erase
12/07/1999US5999444 Nonvolatile semiconductor memory device and writing and erasing method of the same
12/07/1999US5999236 Active-matrix liquid crystal display unit in which gate and/or data lines are made of Cr containing Ne-atoms
12/07/1999US5999235 Liquid crystal displaying apparatus and method of manufacturing TFT array
12/07/1999US5998875 Flip-chip type connection with elastic contacts
12/07/1999US5998871 Metal plug electrode in semiconductor device and method for forming the same
12/07/1999US5998868 Very dense chip package
12/07/1999US5998855 Bipolar power transistor with buried base and interdigitated geometry
12/07/1999US5998854 Semiconductor device
12/07/1999US5998852 Geometrical control of device corner threshold
12/07/1999US5998849 Semiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free state
12/07/1999US5998848 Depleted poly-silicon edged MOSFET structure and method
12/07/1999US5998847 Low voltage active body semiconductor device
12/07/1999US5998845 Semiconductor device having increased safe operating range
12/07/1999US5998844 Semiconductor constructions comprising electrically conductive plugs having monocrystalline and polycrystalline silicon
12/07/1999US5998842 Semiconductor device with gate and control electrodes that provide independent control of drain current
12/07/1999US5998841 Semiconductor device including active matrix circuit
12/07/1999US5998840 Semiconductor-on-insulator field effect transistors with reduced floating body parasitics
12/07/1999US5998839 Bottom-gated cylindrical-shaped thin film transistor having a peripheral offset spacer
12/07/1999US5998837 Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
12/07/1999US5998836 Trench-gated power MOSFET with protective diode
12/07/1999US5998835 High performance MOSFET device with raised source and drain
12/07/1999US5998834 Long channel trench-gated power MOSFET having fully depleted body region
12/07/1999US5998833 Power semiconductor devices having improved high frequency switching and breakdown characteristics
12/07/1999US5998830 Flash memory cell
12/07/1999US5998829 Non-volatile memory device incorporating a dual channel structure
12/07/1999US5998828 Semiconductor device having nitrogen introduced in its polysilicon gate
12/07/1999US5998827 Semiconductor memory device and method of manufacturing the same
12/07/1999US5998825 Capacitor structure of semiconductor memory cell and method for fabricating capacitor structure of semiconductor memory cell
12/07/1999US5998821 Dynamic ram structure having a trench capacitor
12/07/1999US5998819 Thin ferroelectric film element having a multi-layered thin ferroelectric film and method for manufacturing the same
12/07/1999US5998813 Component for protecting telephone line interfaces
12/07/1999US5998812 Amplifying-gate thyristor with an increased hold current
12/07/1999US5998811 Trench emitter controlled thyristor
12/07/1999US5998807 Semiconductor islands on dielectric
12/07/1999US5998301 Method and system for providing tapered shallow trench isolation structure profile
12/07/1999US5998299 Protection structures for the suppression of plasma damage
12/07/1999US5998290 Method to protect gate stack material during source/drain reoxidation
12/07/1999US5998289 Process for obtaining a transistor having a silicon-germanium gate
12/07/1999US5998288 Ultra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrate
12/07/1999US5998286 Method to grow self-aligned silicon on a poly-gate, source and drain region
12/07/1999US5998285 Self-aligned T-shaped process for deep submicron Si MOSFET's fabrication
12/07/1999US5998284 Method for manufacturing semiconductor device
12/07/1999US5998274 Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor
12/07/1999US5998273 Fabrication of semiconductor device having shallow junctions
12/07/1999US5998271 Source/drain zones and a doped gate electrode are simultaneously formed by drive-out from a doped layer. the dopant distribution in the source/drain zones is set by a permeable diffusion barrier at the surface of the source/drain
12/07/1999US5998268 Manufacturing method of semiconductor device with a groove
12/07/1999US5998266 Method of forming a semiconductor structure having laterally merged body layer
12/07/1999US5998265 Method of manufacturing EPROM device
12/07/1999US5998264 Method of forming high density flash memories with MIM structure
12/07/1999US5998261 Method of producing a read-only storage cell arrangement
12/07/1999US5998253 Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell
12/07/1999US5998250 Compound electrode stack capacitor
12/07/1999US5998248 Fabrication of semiconductor device having shallow junctions with tapered spacer in isolation region
12/07/1999US5998246 Self-aligned manufacturing method of a thin film transistor for forming a single-crystal bottom-gate and an offset drain
12/07/1999US5998239 Method of manufacturing a semiconductor device with a brazing mount
12/07/1999US5998234 Method of producing semiconductor device by dicing
12/07/1999US5998227 IGBT and free-wheeling diode combination
12/07/1999US5997958 Fabrication of quantum electronic devices such as single electron transistors and memory devices.
12/07/1999US5997671 Method for producing ceramic diaphragm structure
12/07/1999US5996419 Pressure sensor package
12/02/1999WO1999062174A1 Smart power component
12/02/1999WO1999062124A1 Method for producing schottky diodes
12/02/1999WO1999062123A1 Power diode structure
12/02/1999WO1999062122A1 A switching device
12/02/1999WO1999062113A2 Method for producing schottky diodes
12/02/1999WO1999062112A1 Method for producing schottky diodes
12/02/1999WO1999044229A9 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
12/02/1999DE19924061A1 Semiconductor pressure sensor chip with displaceable diaphragm section and temperature compensation
12/02/1999DE19824401A1 Semiconductor pressure transducer manufacturing method
12/02/1999DE19824111A1 Silicon-germanium heterojunction bipolar transistor
12/02/1999DE19823944A1 Leistungsdioden-Struktur Power diode structure
12/02/1999DE19823768A1 Smartpower-Bauelement Smart Power device
12/02/1999DE19822333A1 Fullerites used in manufacture of electronic components
12/01/1999EP0961326A1 Association of series diodes
12/01/1999EP0961325A1 High integration density MOS technology power device structure
12/01/1999EP0961316A2 Method of making an integrated vertical bipolar transistor
12/01/1999EP0960440A1 A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
12/01/1999EP0960439A1 Antifuse based on silicided polysilicon bipolar transistor
12/01/1999EP0864158B1 Power supply independent current source for flash eprom erasure
12/01/1999EP0788659B1 High voltage lateral dmos device with enhanced drift region
12/01/1999EP0724777B1 Manufacture of electronic devices comprising thin-film circuitry
12/01/1999CN1237272A Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
12/01/1999CN1236999A SOI semiconductor device and method for manufacturing the same
12/01/1999CN1236998A Field effect transistor
12/01/1999CN1236995A Element exploiting magnetic material and addressing method therefor
12/01/1999CN1236989A Semiconductor device and method of manufacturing it
12/01/1999CN1236986A Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation
12/01/1999CN1236981A Film transistor and its making method
12/01/1999CN1236980A Method for fabricating oxide film
12/01/1999CN1047027C Input/output transistors with optimized ESD protection
11/1999
11/30/1999US5996108 Memory system
11/30/1999US5995732 Method and apparatus of verifying reliability of an integrated circuit against electromigration
11/30/1999US5995527 Indium nitride
11/30/1999US5995409 Electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same
11/30/1999US5995176 Liquid crystal display apparatus having pixels of different orientation of liquid crystal capable of shielding leakage of light through the discontinuity of orientation
11/30/1999US5995175 Liquid crystal display and a method for manufacturing the same
11/30/1999US5995174 Liquid crystal display apparatus with source/drain electrodes and pixel electrode formed by the same material
11/30/1999US5994915 Reduced terminal testing system
11/30/1999US5994764 Semiconductor device
1 ... 1843 1844 1845 1846 1847 1848 1849 1850 1851 1852 1853 1854 1855 1856 1857 1858 1859 1860 1861 1862 1863 ... 2182