Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1999
12/29/1999WO1999067825A2 Methods of fabricating silicon carbide power devices by controlled annealing
12/29/1999EP0967660A2 Power MOSFET and method for fabricating the same
12/29/1999EP0967659A1 IGBT Power device with improved resistance to reverse power pulses
12/29/1999EP0967658A2 Semiconductor device with quantum-wave interference layers
12/29/1999EP0967657A2 NMOS-Transistor
12/29/1999EP0967654A1 Non-volatile semiconductor memory device
12/29/1999EP0967653A2 Semiconductor DRAM trench capacitor
12/29/1999EP0967644A2 DRAM trench capacitor
12/29/1999EP0967640A2 Method of making a self-aligned contact
12/29/1999EP0967637A1 Semiconductor device and manufacturing method
12/29/1999EP0966764A1 Source-down fet
12/29/1999EP0966763A1 Structure for increasing the maximum voltage of silicon carbide power transistors
12/29/1999EP0966762A1 As/P HYBRID nLDD JUNCTION AND MEDIUM Vdd OPERATION FOR HIGH SPEED MICROPROCESSORS
12/29/1999EP0966761A1 Vertical igbt with an soi structure
12/29/1999EP0966760A1 Aluminium gallium nitride (algan) based heterojunction bipolar transistor
12/29/1999EP0966757A1 Semiconductor and method relating to semiconductors
12/29/1999EP0966756A2 Ion implantation process
12/29/1999EP0966755A1 Method of manufacturing a semiconductor device by low temperature cvd
12/29/1999EP0720779B1 A transferred electron effect device
12/29/1999CN1239835A 电子电路 Electronic circuit
12/29/1999CN1239828A Method for fabricating ferroelectric memory device
12/29/1999CN1239815A Method for forming self aligned contact in semiconductor device
12/29/1999CN1047872C Semiconductor device and method for fabricating the same
12/28/1999US6009027 Test method and circuit for semiconductor memory
12/28/1999US6009017 Floating gate memory with substrate band-to-band tunneling induced hot electron injection
12/28/1999US6009011 Non-volatile memory and method for operating the same
12/28/1999US6008539 Multilayer
12/28/1999US6008527 Diode device
12/28/1999US6008525 Semiconductor and passivation layer
12/28/1999US6008520 Trench MOSFET with heavily doped delta layer to provide low on- resistance
12/28/1999US6008519 Vertical transistor and method
12/28/1999US6008518 Transistor and method of manufacturing the same
12/28/1999US6008517 High density and low power flash memories with a high capacitive-coupling ratio
12/28/1999US6008512 Semiconductor device with increased maximum terminal voltage
12/28/1999US6008509 Field effect transistor
12/28/1999US6008505 Thin film transistor and method for fabricating the same
12/28/1999US6008142 Fabrication process of semiconductor device
12/28/1999US6008136 Etching gas mixture of fluorocarbon and hydrogen
12/28/1999US6008124 Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same
12/28/1999US6008123 Method for using a hardmask to form an opening in a semiconductor substrate
12/28/1999US6008112 Method for planarized self-aligned floating gate to isolation
12/28/1999US6008111 Method of manufacturing semiconductor device
12/28/1999US6008100 Metal-oxide semiconductor field effect transistor device fabrication process
12/28/1999US6008097 MOS transistor of semiconductor device and method of manufacturing the same
12/28/1999US6008094 Optimization of logic gates with criss-cross implants to form asymmetric channel regions
12/28/1999US6008093 Method of making a mask ROM
12/28/1999US6008092 Short channel IGBT with improved forward voltage drop and improved switching power loss
12/28/1999US6008091 Floating gate avalanche injection MOS transistors with high K dielectric control gates
12/28/1999US6008090 Method of forming high density flash memories with high capacitive-couping ratio and high speed operation
12/28/1999US6008088 Method for fabricating a semiconductor memory device
12/28/1999US6008077 Method for fabricating semiconductor device
12/28/1999US6008076 Thin film transistor and semiconductor device and method for forming the same
12/28/1999US6008065 Method for manufacturing a liquid crystal display
12/28/1999US6007641 Cleaning with an aqueous solution of hydrogen peroxide; exposing silicon and demetallizing (calcium) by removing silicon dioxide with an aqueous hydrogen fluoride and nitricacid solution; rinsing; drying; oxidation to pure
12/28/1999US6006606 Semiconductor acceleration sensor
12/23/1999WO1999066562A1 Quantum wire field-effect transistor and method of making the same
12/23/1999WO1999066561A1 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection
12/23/1999WO1999066559A1 Integrated silicon-on-insulator integrated circuit with decoupling capacity and method for making such a circuit
12/23/1999WO1999066540A2 An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
12/23/1999WO1999066539A2 Lateral thin-film soi devices with graded top oxide and graded drift region
12/23/1999WO1999066349A1 Scintillator panel, radiation image sensor, and method for manufacturing the same
12/23/1999WO1999065388A1 Substrate sensor
12/23/1999WO1999050889A3 Printed insulators for active and passive electronic devices
12/23/1999WO1999045588A3 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive
12/23/1999DE19927727A1 Voltage surge suppression circuit for transistors with isolated gates
12/23/1999DE19926711A1 Ferroelectric DRAM device and manufacture
12/23/1999DE19926321A1 CCD image sensor with light quantity monitoring for pixels
12/23/1999DE19925657A1 Self aligned contact with interlayer to fill spaces between stacked patterns with contact holes and spacers on sidewalls of patterns
12/23/1999DE19916351A1 Blocking layer transistor with carbon nanotubes
12/23/1999DE19838106A1 Thermally stable tungsten silicide layer formation, especially in gate structure of a MOS device
12/22/1999EP0966033A2 Semiconductor device and method for producing the same
12/22/1999EP0966029A1 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device
12/22/1999EP0965146A1 JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE
12/22/1999EP0965145A2 A high voltage thin film transistor with improved on-state characteristics and method for making same
12/22/1999EP0965144A2 Manufacture of a semiconductor device with a poly-emitter bipolar transistor
12/22/1999EP0965133A1 Nonvolatile pmos two transistor memory cell and array
12/22/1999EP0857354A4 A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
12/22/1999CN1239590A Uniform ballast resistance for thermally balanced radio frequency power transistor
12/22/1999CN1239543A Spherical shaped semiconductor integrated circuit
12/22/1999CN1239325A Method of forming semiconductor device
12/21/1999US6005807 Method and apparatus for self-aligned memory cells and array using source side injection
12/21/1999US6005645 Stereoscopic display device having particular circuits
12/21/1999US6005543 Liquid crystal display device and method of driving the same
12/21/1999US6005285 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device
12/21/1999US6005283 Complementary bipolar transistors
12/21/1999US6005280 Charge cancellation technique for integrated circuit resistors
12/21/1999US6005275 Semiconductor acceleration sensor with cantilever
12/21/1999US6005274 Semiconductor device with a multi-level gate structure and a gate dielectric composed of barium zirconium titanate material
12/21/1999US6005273 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors
12/21/1999US6005272 Trench transistor with source contact in trench
12/21/1999US6005271 Semiconductor cell array with high packing density
12/21/1999US6005267 MES/MIS FET with split-gate RF input
12/21/1999US6005266 Very low leakage JFET for monolithically integrated arrays
12/21/1999US6005261 Semiconductor device with a junction termination and a method for production thereof
12/21/1999US6004879 Siliciding, oxidation; doping; heat resistance
12/21/1999US6004872 Vapor depositing titanium using high frequency plasma of low density; reacting with silicon substrate to form titanium silicide; siliciding; etching
12/21/1999US6004871 Implant enhancement of titanium silicidation
12/21/1999US6004869 Method for making a low resistivity electrode having a near noble metal
12/21/1999US6004856 Manufacturing process for a raised capacitor electrode
12/21/1999US6004851 Method for manufacturing MOS device with adjustable source/drain extensions
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