Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1999
12/21/1999US6004850 Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation
12/21/1999US6004849 Doping with arsenic; stripping photoresist, oxidation, implanting phosphorus, depositing conforming spacer, anisotropic etching; siliciding refractory metal
12/21/1999US6004842 Method of making a DRAM with a transfer transistor
12/21/1999US6004837 Dual-gate SOI transistor
12/21/1999US6004836 Method for fabricating a film transistor
12/21/1999US6004396 Spherical shaped semiconductor integrated circuit
12/21/1999US6004137 Method of making graded channel effect transistor
12/21/1999US6003374 Acceleration sensor and a method for its manufacture
12/16/1999WO1999065083A1 Semiconductor integrated circuit device and method of its manufacture
12/16/1999WO1999065082A1 Field-controlled high-power semiconductor devices
12/16/1999WO1999065081A2 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement
12/16/1999WO1999065080A2 Device and method for controlling thyristors
12/16/1999WO1999065078A2 Semiconductor device
12/16/1999WO1999065073A1 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions
12/16/1999WO1999065070A2 Method of manufacturing a semiconductor device comprising a mos transistor
12/16/1999WO1999065067A1 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement
12/16/1999WO1999065050A1 Planar electron emitter (pee)
12/16/1999DE19916073A1 Thin film transistor useful in an LCD or an SRAM
12/16/1999CA2332556A1 Planar electron emitter (pee)
12/15/1999EP0964455A1 SOI semiconductor device and method of making the same
12/15/1999EP0964454A1 Field-effect transistor having a lightly doped drain region and method of making the same
12/15/1999EP0964453A2 Article comprising an oxide layer on a GaAs-Based semiconductor body, and method of making the article
12/15/1999EP0964452A2 Semiconductor device with quantum-wave interference layers
12/15/1999EP0964445A2 Stress reduction for flip chip package
12/15/1999EP0964437A2 Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device
12/15/1999EP0963610A1 Bipolar soi device having a tilted pn-junction, and a method for producing such a device
12/15/1999EP0963608A1 Subscriber interface protection circuit
12/15/1999EP0963601A1 Method for producing a silicium capacitor
12/15/1999EP0963586A1 A scalable flash eeprom memory cell, method of manufacturing and operation thereof
12/15/1999EP0852726B1 Monolithic acceleration transducer
12/15/1999EP0753193A4 Improvements in an apparatus and method of use of radiofrequency identification tags
12/15/1999EP0692146B1 Charge-coupled device array for spectroscopic detection
12/15/1999EP0648375B1 Triple-gate flash eeprom memory and method for making same
12/15/1999CN1238857A Self-aligned non-volatile storage cell
12/15/1999CN1238564A Insulated gate transistor, method of manufacturing same, and semiconductor integrated circuit device
12/15/1999CN1238563A Bipolar heterojunction transistor
12/15/1999CN1238557A Semiconductor integrated circuit device and process for manufacturing the same
12/15/1999CN1238555A Semiconductor device and method for forming the same
12/15/1999CN1238553A Method for manufacturing semiconductor device
12/15/1999CN1238532A Transistor circuit having dynamic threshold voltage
12/14/1999US6002610 Non-volatile memory element for programmable logic applications and operational methods therefor
12/14/1999US6002301 Transistor and power amplifier
12/14/1999US6002159 SiC semiconductor device comprising a pn junction with a voltage absorbing edge
12/14/1999US6002158 High breakdown-voltage diode with electric-field relaxation region
12/14/1999US6002156 Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
12/14/1999US6002154 High-frequency MOSFET
12/14/1999US6002153 MOS type semiconductor device with a current detecting function
12/14/1999US6002152 EEPROM with split gate source side injection with sidewall spacers
12/14/1999US6002151 Non-volatile trench semiconductor device
12/14/1999US6002150 Compound material T gate structure for devices with gate dielectrics having a high dielectric constant
12/14/1999US6002148 Silicon carbide transistor and method
12/14/1999US6002146 Solid-State image sensing device, method for driving thereof and camera employing the same
12/14/1999US6002145 Solid-state imaging device
12/14/1999US6002144 Zener diode semiconductor device with contact portions
12/14/1999US6002143 Hybrid vertical type power semiconductor device
12/14/1999US6001741 Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices
12/14/1999US6001729 Contact structure has conductive zones of high melting point metal
12/14/1999US6001719 Methods of forming metal silicide layers having insulator-filled recesses therein
12/14/1999US6001718 Semiconductor device having a ternary compound low resistive electrode
12/14/1999US6001716 Fabricating method of a metal gate
12/14/1999US6001714 Method and apparatus for manufacturing polysilicon thin film transistor
12/14/1999US6001712 Forming gate insulating film, then electrode by vapor deposition
12/14/1999US6001710 MOSFET device having recessed gate-drain shield and method
12/14/1999US6001705 Process for realizing trench structures
12/14/1999US6001698 MOS transistor and fabrication process for the same
12/14/1999US6001695 Method to form ultra-short channel MOSFET with a gate-side airgap structure
12/14/1999US6001694 Manufacturing method for integrated circuit dielectric layer
12/14/1999US6001692 Method of fabricating trench MOS
12/14/1999US6001684 Method for forming a capacitor
12/14/1999US6001678 Insulated gate semiconductor device
12/14/1999US6001675 Diffusion fluorine into polycrystalline thin film
12/14/1999US6001673 Methods for packaging integrated circuit devices including cavities adjacent active regions
12/14/1999US6001666 Manufacturing process of strain gauge sensor using the piezoresistive effect
12/09/1999WO1999063598A1 Semiconductor current-switching device having operational enhancer and method therefor
12/09/1999WO1999063597A1 Diode
12/09/1999WO1999063596A1 Diamond component with rear side contact and a method for the production thereof
12/09/1999WO1999063580A2 Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers
12/09/1999WO1999030352A3 Method for producing a matrix from thin-film transistors with storage capacities
12/09/1999DE19925233A1 Semiconductor structure, e.g. a Schottky diode, p-n diode or MOSFET, has low contact resistance, temperature stable ohmic contacts
12/09/1999DE19924982A1 Semiconductor structure, e.g. a Schottky diode, p-n diode or MOSFET, has a low contact resistance, temperature stable ohmic contact
12/09/1999DE19918198A1 Trench-type power MOSFET for e.g. battery operated portable electronic devices such as personal computer
12/09/1999DE19905517A1 Buffer layer for semiconductor device
12/09/1999DE19824110A1 Silicon-germanium hetero bipolar transistor useful as an h.f. oscillator
12/08/1999EP0962988A2 SOI semiconductor device and method for manufacturing the same
12/08/1999EP0962987A2 Vertical trench-gated power MOSFET having stripe geometry and high cell density
12/08/1999EP0962986A2 MOS transistors with improved gate dielectrics
12/08/1999EP0962985A1 Vertical bipolar transistor with base region having low roughness and fabrication process thereof
12/08/1999EP0962984A2 Thin-film transistor monolithically integrated with an organic light-emitting diode
12/08/1999EP0962973A1 Multichip press-contact power semiconductor device
12/08/1999EP0962967A1 Method for selectively doping the intrinsic collector of an epitaxial base vertical bipolar transistor
12/08/1999EP0962966A1 Low noise vertical bipolar transistor and method of manufacturing it
12/08/1999EP0962963A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
12/08/1999EP0962029A1 Communicating between stations
12/08/1999EP0961652A1 Laminated assembly for active bioelectronic devices
12/08/1999EP0804808B1 Contoured nonvolatile memory cell
12/08/1999CN1237798A Semiconductor power rectifier voltage dip method for improving avanlanche voltage
12/08/1999CN1237794A Semiconductor memory device equipped with access circuit for performing access control of flash memory
12/07/1999US5999453 Nonvolatile semiconductor memory
12/07/1999US5999452 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memory
12/07/1999US5999448 Nonvolatile semiconductor memory device and method of reproducing data of nonvolatile semiconductor memory device
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