| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/12/2000 | EP0970355A1 Batch fabricated semiconductor thin-film pressure sensor and method of making same |
| 01/12/2000 | EP0875074A4 Semiconductor devices, and methods for same |
| 01/12/2000 | CN1241297A High density electrical connectors |
| 01/12/2000 | CN1241257A Pressure sensor component with tubing connection |
| 01/12/2000 | CN1241034A Semiconductor device and method of manufacturing the same |
| 01/12/2000 | CN1241031A Method for fabricating semiconductor memory device and structure thereof |
| 01/12/2000 | CN1241028A Method for manufacturing semiconductor device capable of effectively carrying out hydrogen passivation |
| 01/12/2000 | CN1241026A Improved SAC process flow method using isolating spacer |
| 01/12/2000 | CN1241025A Manufacturing method of thin film transistor liquid crystal display |
| 01/12/2000 | CN1241020A Method for fabricating MOS transistor |
| 01/11/2000 | US6014328 Memory cell allowing write and erase with low voltage power supply and nonvolatile semiconductor memory device provided with the same |
| 01/11/2000 | US6013950 Semiconductor diode with external field modulation |
| 01/11/2000 | US6013942 Bipolar transistor structure |
| 01/11/2000 | US6013941 Bipolar transistor with collector surge voltage protection |
| 01/11/2000 | US6013938 Power control device |
| 01/11/2000 | US6013936 Double silicon-on-insulator device and method therefor |
| 01/11/2000 | US6013934 Semiconductor structure for thermal shutdown protection |
| 01/11/2000 | US6013933 Semiconductor structure having a monocrystalline member overlying a cavity in a semiconductor substrate and process therefor |
| 01/11/2000 | US6013930 Semiconductor device having laminated source and drain regions and method for producing the same |
| 01/11/2000 | US6013929 Thin film transistor, having a nitride film on the gate insulation layer and an organic resin interlayer film on the transistor |
| 01/11/2000 | US6013928 Semiconductor device having interlayer insulating film and method for forming the same |
| 01/11/2000 | US6013927 Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same |
| 01/11/2000 | US6013926 Semiconductor device with refractory metal element |
| 01/11/2000 | US6013923 Semiconductor switch array with electrostatic discharge protection and method of fabricating |
| 01/11/2000 | US6013922 Semiconductor storage element having a channel region formed of an aggregate of spherical grains and a method of manufacturing the same |
| 01/11/2000 | US6013577 Method of making an amorphous surface for a gate electrode during the fabrication of a semiconductor device |
| 01/11/2000 | US6013573 Method of manufacturing an air bridge type structure for supporting a micro-structure |
| 01/11/2000 | US6013554 Method for fabricating an LDD MOS transistor |
| 01/11/2000 | US6013553 Zirconium and/or hafnium oxynitride gate dielectric |
| 01/11/2000 | US6013552 Method of manufacturing a split-gate flash memory cell |
| 01/11/2000 | US6013548 Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
| 01/11/2000 | US6013544 Method for fabricating a semiconductor device |
| 01/11/2000 | US6013543 Methods of forming thin film transistors |
| 01/11/2000 | US6013310 Method for producing a thin film semiconductor device |
| 01/11/2000 | US6013129 Production of heavily-doped silicon |
| 01/11/2000 | CA2150679C Improved structure for cdse tft |
| 01/06/2000 | WO2000001016A1 Thin-film transistor and method of manufacture thereof |
| 01/06/2000 | WO2000001015A1 Semiconductor device and method of manufacture thereof |
| 01/06/2000 | WO2000001008A1 Ulsi mos with high dielectric constant gate insulator |
| 01/06/2000 | WO2000001005A1 Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
| 01/06/2000 | WO1999054936A8 Polymer devices |
| 01/05/2000 | EP0969694A2 Pressure transducer and manufacturing method thereof |
| 01/05/2000 | EP0969516A2 MOSFET with structured source/drain region and method for producing the same |
| 01/05/2000 | EP0969515A2 Resonance phase transistor with transit time delay |
| 01/05/2000 | EP0969504A1 Semiconductor device |
| 01/05/2000 | EP0969126A2 Method of fabrication of Si nanostructures |
| 01/05/2000 | EP0968537A2 A method of manufacturing a field-effect transistor substantially consisting of organic materials |
| 01/05/2000 | EP0968534A1 High-threshold soi thin film transistor |
| 01/05/2000 | EP0968533A1 High performance display pixel for electronic displays |
| 01/05/2000 | EP0968532A1 Lateral silicon carbide semiconductor device having a drift region with a varying doping level |
| 01/05/2000 | EP0968529A2 Semiconductor device and method of manufacturing such a device |
| 01/05/2000 | EP0968528A2 Method of manufacturing a semiconductor device comprising a field effect transistor |
| 01/05/2000 | EP0968527A1 Method for producing a vertical mos-transistor |
| 01/05/2000 | EP0968526A2 Method of forming etched structures comprising implantation steps |
| 01/05/2000 | EP0761015B1 Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminium bonding layer |
| 01/05/2000 | EP0752159B1 Semiconductor device provided with a microcomponent having a fixed and a movable electrode |
| 01/05/2000 | DE19929656A1 Non-volatile ferromagnetic memory achieves high access speed without danger of damaging a reference cell |
| 01/05/2000 | DE19923259A1 Semiconductor memory in substrate of first conductivity |
| 01/05/2000 | DE19828669A1 Lateral IGBT with SOI construction |
| 01/05/2000 | CN1240537A Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| 01/05/2000 | CN1240536A Memory cell arrangement and process for manufacturing the same |
| 01/04/2000 | US6011725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| 01/04/2000 | US6011723 Nonvolatile semiconductor memory device including a circuit for providing a boosted potential |
| 01/04/2000 | US6011714 Semiconductor circuit capable of storing a plurality of analog or multi-valued data |
| 01/04/2000 | US6011600 Transistor matrix device wherein light is shielded by gaps between n-th and n+1-th picture element electrodes by n+1-th capacitance bus line |
| 01/04/2000 | US6011301 Stress reduction for flip chip package |
| 01/04/2000 | US6011298 High voltage termination with buried field-shaping region |
| 01/04/2000 | US6011297 Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
| 01/04/2000 | US6011293 Semiconductor device having a structure for detecting a boosted potential |
| 01/04/2000 | US6011290 Short channel length MOSFET transistor |
| 01/04/2000 | US6011289 Metal oxide stack for flash memory application |
| 01/04/2000 | US6011288 Flash memory cell with vertical channels, and source/drain bus lines |
| 01/04/2000 | US6011285 C-axis oriented thin film ferroelectric transistor memory cell and method of making the same |
| 01/04/2000 | US6011283 Pillar emitter for BiCMOS devices |
| 01/04/2000 | US6011282 Charge coupled device with a buried channel two-phase driven two-layer electrode structure |
| 01/04/2000 | US6011281 Semiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contact |
| 01/04/2000 | US6011280 IGBT power device with improved resistance to reverse power pulses |
| 01/04/2000 | US6011279 Silicon carbide field controlled bipolar switch |
| 01/04/2000 | US6011278 Lateral silicon carbide semiconductor device having a drift region with a varying doping level |
| 01/04/2000 | US6011277 Gate insulated field effect transistors and method of manufacturing the same |
| 01/04/2000 | US6011276 Thin film transistor and fabrication method thereof |
| 01/04/2000 | US6011273 Thin-film semiconductor device having pressure sensitive and non-sensitive regions |
| 01/04/2000 | US6011272 Silicided shallow junction formation and structure with high and low breakdown voltages |
| 01/04/2000 | US6011271 Semiconductor device and method of fabricating the same |
| 01/04/2000 | US6010954 Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices |
| 01/04/2000 | US6010952 Process for forming metal silicide contacts using amorphization of exposed silicon while minimizing device degradation |
| 01/04/2000 | US6010946 Semiconductor device with isolation insulating film tapered and method of manufacturing the same |
| 01/04/2000 | US6010940 Methods for fabricating CVD TiN barrier layers for capacitor structures |
| 01/04/2000 | US6010936 Semiconductor device fabrication method |
| 01/04/2000 | US6010931 Planarization technique for DRAM cell capacitor electrode |
| 01/04/2000 | US6010928 High density transistor component and its manufacturing method |
| 01/04/2000 | US6010924 Process for fabricating a thin film transistor |
| 01/04/2000 | US6010922 Semiconductor device with increased distance between channel edges and a gate electrode |
| 01/04/2000 | US6010921 Method of fabricating a field-effect transistor utilizing an SOI substrate |
| 12/30/1999 | DE19929926A1 Memory of multilevel quantum dot structure with conductive layers removed to form mask for source/drain |
| 12/30/1999 | DE19928547A1 Pressure sensor especially of semiconductor type |
| 12/30/1999 | DE19907719A1 Semiconductor device with DPSA structure |
| 12/30/1999 | DE19820758C1 Herstellverfahren für mikromechanische Bauelemente Production process for micromechanical devices |
| 12/29/1999 | WO1999067827A2 Semiconductor structure and procedure for minimising non-idealities |
| 12/29/1999 | WO1999067826A1 Lateral high-voltage transistor |