| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/25/2000 | US6018170 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
| 01/25/2000 | US6018166 Multilayer; spacing between intakes and drains |
| 01/25/2000 | US6017823 Method of forming a MOS field effect transistor with improved gate side wall insulation films |
| 01/25/2000 | US6017819 Method for forming a polysilicon/amorphous silicon composite gate electrode |
| 01/25/2000 | US6017809 Method of manufacturing semiconductor device |
| 01/25/2000 | US6017808 Depositing polysilicon onto gate oxide followed by nitrogen doping and annealing, removing polysilicon from top of polysilicon layer to provide secon polysilicon layer |
| 01/25/2000 | US6017802 Ultra-short transistor fabrication scheme for enhanced reliability |
| 01/25/2000 | US6017801 Method for fabricating field effect transistor |
| 01/25/2000 | US6017798 FET with stable threshold voltage and method of manufacturing the same |
| 01/25/2000 | US6017794 Depositing and patterning lower metallization layer of chromium and dielectric layer; depositing chromium caps over source and drain regions; patterning and etching trenches; filling trenches with dielectric layer; depositing metal |
| 01/25/2000 | US6017793 Method of forming a memory cell of a nonvolatile semiconductor memory device |
| 01/25/2000 | US6017784 Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode |
| 01/25/2000 | US6017783 Method of manufacturing a semiconductor device using an insulated gate electrode as a mask |
| 01/25/2000 | US6017782 Thin film transistor and method of forming thin film transistors |
| 01/25/2000 | US6017781 Forming gate dielectric film to cover gate electrode on dielectric film; forming polysilicon film; doping silicon or nitrogen into polysilicon film; heat treating to convert amorphous silicon into polysilicon |
| 01/25/2000 | US6017779 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
| 01/25/2000 | US6017778 Method for making power integrated circuit |
| 01/25/2000 | US6017696 Controlling nucleic acid hybridization by connecting multiple electrical sources to several location where a plurality of nucleic acids with target nucleic acids are attached, apply a negative potential, removing non specific nucleic acid |
| 01/20/2000 | WO2000003560A2 Method for producing a filled recess in a material layer, integrated circuit produced using said method |
| 01/20/2000 | WO2000003440A1 Silicon carbide horizontal channel buffered gate semiconductor devices |
| 01/20/2000 | WO2000003427A1 Semiconductor power device manufacture |
| 01/20/2000 | WO2000003345A1 Semiconductor component having a passivation |
| 01/20/2000 | WO2000003339A1 Two-dimensional to three-dimensional vlsi design |
| 01/20/2000 | WO1999053553A3 Semiconductor device having a rectifying junction and method of manufacturing same |
| 01/20/2000 | DE19928280A1 Ferroelectric memory device, especially a ferroelectric RAM for modern data processing systems, is produced by forming a capacitor with a multilayer ferroelectric layer of titanate content exceeding its zirconate content |
| 01/20/2000 | DE19909815A1 Gate electrode structure of MOS transistor, which consists of film lamination on gate insulating film on semiconductor substrate |
| 01/20/2000 | DE19830332A1 Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld Vertical semiconductor component with reduced surface electrical field |
| 01/19/2000 | EP0973206A2 High withstand voltage MIS transistor |
| 01/19/2000 | EP0973205A2 High voltage MOS transistor |
| 01/19/2000 | EP0973204A2 MOS-Transistor with enhanced withstanding voltage and reduced on-resistance |
| 01/19/2000 | EP0973203A2 Semiconductor layer with lateral variable doping and its method of fabrication |
| 01/19/2000 | EP0973191A1 Method for manufacturing semiconductor integrated circuit device |
| 01/19/2000 | EP0973189A2 A method for gate-stack formation including a high-K dielectric |
| 01/19/2000 | EP0973169A2 Element exploiting magnetic material and addressing method therefor |
| 01/19/2000 | EP0972309A4 Barrier layer for ferroelectric capacitor integrated on silicon |
| 01/19/2000 | EP0972309A1 Barrier layer for ferroelectric capacitor integrated on silicon |
| 01/19/2000 | EP0972304A1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation |
| 01/19/2000 | EP0972301A1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate |
| 01/19/2000 | EP0972284A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 01/19/2000 | EP0948818A4 High density trench dmos transistor with trench bottom implant |
| 01/19/2000 | EP0931379A4 Triple well charge pump |
| 01/19/2000 | EP0836232A4 Tunnelling device and method of producing a tunnelling device |
| 01/19/2000 | EP0724779B1 A variable capacitance semiconductor diode |
| 01/19/2000 | EP0708980B1 Method of fabricating an electronic device on a silicon on insulator wafer |
| 01/19/2000 | CN1241818A Semiconductor device and manufacturing method |
| 01/19/2000 | CN1241816A MIS semiconductor device and method of fabricating the same |
| 01/19/2000 | CN1048558C An active matrix for liquid crystal displays |
| 01/18/2000 | US6016269 Quantum random address memory with magnetic readout and/or nano-memory elements |
| 01/18/2000 | US6016267 High speed, high bandwidth, high density, nonvolatile memory system |
| 01/18/2000 | US6016266 Semiconductor device with a ferroelectric capacitor |
| 01/18/2000 | US6016174 Method for manufacturing electro-optic element |
| 01/18/2000 | US6016073 BiCMOS negative charge pump |
| 01/18/2000 | US6016002 Stacked silicon-controlled rectifier having a low voltage trigger and adjustable holding voltage for ESD protection |
| 01/18/2000 | US6015999 Low-voltage punch-through transient suppressor employing a dual-base structure |
| 01/18/2000 | US6015997 Semiconductor structure having a doped conductive layer |
| 01/18/2000 | US6015993 Semiconductor diode with depleted polysilicon gate structure and method |
| 01/18/2000 | US6015992 Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits |
| 01/18/2000 | US6015991 Asymmetrical field effect transistor |
| 01/18/2000 | US6015990 Semiconductor memory device and method of manufacturing the same |
| 01/18/2000 | US6015982 Lateral bipolar field effect mode hybrid transistor and method for operating the same |
| 01/18/2000 | US6015981 Heterostructure field-effect transistors (HFETs') with high modulation effectivity |
| 01/18/2000 | US6015978 Resonance tunnel device |
| 01/18/2000 | US6015762 Plasma CVD method |
| 01/18/2000 | US6015746 Method of fabricating semiconductor device with a gate-side air-gap structure |
| 01/18/2000 | US6015745 Method for semiconductor fabrication |
| 01/18/2000 | US6015740 Method of fabricating CMOS devices with ultra-shallow junctions and reduced drain area |
| 01/18/2000 | US6015739 Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant |
| 01/18/2000 | US6015737 Production method of a vertical type MOSFET |
| 01/18/2000 | US6015729 Integrated chip multilayer decoupling capcitors |
| 01/18/2000 | US6015727 Damascene formation of borderless contact MOS transistors |
| 01/18/2000 | US6015725 Vertical field effect transistor and manufacturing method thereof |
| 01/18/2000 | US6015724 Manufacturing method of a semiconductor device |
| 01/18/2000 | US6015720 Method of forming polycrystalline semiconductor thin film |
| 01/18/2000 | US6015599 High vertical aspect ratio thin film structures |
| 01/13/2000 | WO2000002259A1 A thin-film opto-electronic device and a method of making it |
| 01/13/2000 | WO2000002253A2 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 01/13/2000 | WO2000002252A1 An electrically erasable programmable split-gate memory cell |
| 01/13/2000 | WO2000002251A1 Thin film transistor and liquid crystal display |
| 01/13/2000 | WO2000002250A1 Vertical semiconductor element with reduced electric surface field |
| 01/13/2000 | WO2000002249A2 Integrated circuit with p-n junctions with reduced defects |
| 01/13/2000 | WO2000002248A1 Semiconductor integrated circuit and method for manufacturing the same |
| 01/13/2000 | DE19931784A1 Semiconductor substrate for electronic circuit elements |
| 01/13/2000 | DE19931324A1 Silicon carbide MOS device, especially a vertical silicon carbide MOSFET, is produced |
| 01/13/2000 | DE19907070A1 Semiconductor device with contact vias extending through an interlayer insulation layer |
| 01/13/2000 | DE19828494A1 MOSFET with integral high current protection for power devices |
| 01/12/2000 | EP0971418A2 Semiconductor device having reduced effective substrate resistivity and associated methods |
| 01/12/2000 | EP0971416A1 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| 01/12/2000 | EP0971415A1 Process for the fabrication of a semiconductor non-volatile memory device with Shallow Trench Isolation (STI) |
| 01/12/2000 | EP0971411A2 Semiconductor device |
| 01/12/2000 | EP0971404A1 Double sidewall raised silicided source/drain CMOS transistor |
| 01/12/2000 | EP0971397A1 Method and device for activating semiconductor impurities |
| 01/12/2000 | EP0971394A1 Semiconductor substrate and semiconductor device |
| 01/12/2000 | EP0971360A1 Semiconductor memory cell |
| 01/12/2000 | EP0970526A2 Power semiconductor devices |
| 01/12/2000 | EP0970525A1 Asymmetrical thyristor |
| 01/12/2000 | EP0970524A2 SiC SEMICONDUCTOR ARRAY WITH ENHANCED CHANNEL MOBILITY |
| 01/12/2000 | EP0970518A1 Trench-isolated bipolar devices |
| 01/12/2000 | EP0970516A1 Strontium bismuth niobate tantalate ferroelectric thin film |
| 01/12/2000 | EP0970513A4 Well boosting threshold voltage rollup |
| 01/12/2000 | EP0970513A2 Well boosting threshold voltage rollup |