| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/03/2000 | WO2000005754A1 Semiconductor thin film and thin film device |
| 02/03/2000 | WO1999065081A3 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement |
| 02/03/2000 | WO1999057750A3 Method of manufacturing a semiconductor device |
| 02/03/2000 | DE19834491A1 Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors Arrangement and method for manufacturing a heterobipolar |
| 02/02/2000 | EP0977272A1 Constant current generator |
| 02/02/2000 | EP0977271A2 Semiconductor IGBT module |
| 02/02/2000 | EP0977270A2 Resonance phase transistor with antiphase carrier injection |
| 02/02/2000 | EP0977269A1 Imager having an array of photodiodes |
| 02/02/2000 | EP0977267A1 Non volatile memory structure and corresponding manufacturing process |
| 02/02/2000 | EP0977261A1 Pressure contact type semiconductor device and power application device |
| 02/02/2000 | EP0977257A2 Stacked capacitor DRAM cell and method of producing the same |
| 02/02/2000 | EP0977250A2 Structure and process for the fabrication of a heterojunction bipolar transistor |
| 02/02/2000 | EP0977241A2 System, method and apparatus for processing semiconductors |
| 02/02/2000 | EP0977240A1 System, method and apparatus for processing semiconductors |
| 02/02/2000 | EP0976159A1 A bipolar transistor structure |
| 02/02/2000 | EP0976157A2 Emitter-switched thyristor |
| 02/02/2000 | EP0976149A1 Method for limiting internal diffusion in a semiconductor device with composite si/sige gate |
| 02/02/2000 | EP0976148A1 Method for nitriding the gate oxide layer of a semiconductor device and resulting device |
| 02/02/2000 | EP0853819B1 Mos transistor with high output voltage endurance |
| 02/02/2000 | EP0847624A4 Multiple logic family compatible output driver |
| 02/02/2000 | EP0763257B1 Method of manufacturing a semiconductor device with a bicmos circuit |
| 02/02/2000 | CN1243603A Improved active matrix ESD protection and testing scheme |
| 02/02/2000 | CN1243338A Semiconductor device and mfg. method thereof |
| 02/02/2000 | CN1243336A Complementary metal oxide semiconductor device and formation method thereof |
| 02/02/2000 | CN1243334A Surface voltage-resistant layer of semiconductor device for floating voltage end |
| 02/01/2000 | US6020641 Multilevel interconnection with low contact resistance in a semiconductor device |
| 02/01/2000 | US6020623 Integrated structure with device having a preset reverse conduction threshold |
| 02/01/2000 | US6020622 Trench isolation for semiconductor device with lateral projections above substrate |
| 02/01/2000 | US6020617 Lateral MOS transistor with weakly doped drain extension |
| 02/01/2000 | US6020615 Semiconductor-on-insulator devices including alternating thin and thick film semiconductor stripes on an insulating layer |
| 02/01/2000 | US6020613 Field effect transistor array including resistive interconnections |
| 02/01/2000 | US6020611 Semiconductor component and method of manufacture |
| 02/01/2000 | US6020610 Semiconductor device and method of manufacturing the same |
| 02/01/2000 | US6020608 Junction-type field-effect transistor with improved impact-ionization resistance |
| 02/01/2000 | US6020607 Semiconductor device having junction field effect transistors |
| 02/01/2000 | US6020606 Structure of a memory cell |
| 02/01/2000 | US6020605 Quantum box structure and carrier conductivity modulating device |
| 02/01/2000 | US6020604 Compound semiconductor device |
| 02/01/2000 | US6020603 Semiconductor device with a beveled and chamfered outer peripheral portion |
| 02/01/2000 | US6020600 Silicon carbide semiconductor device with trench |
| 02/01/2000 | US6020598 Liquid crystal display device including crossing gate wiring |
| 02/01/2000 | US6020260 Annealing polysilicon layer in nitrogen |
| 02/01/2000 | US6020250 Stacked devices |
| 02/01/2000 | US6020246 Forming a self-aligned epitaxial base bipolar transistor |
| 02/01/2000 | US6020245 Method of manufacturing semiconductor device where characteristics can be measured at manufacture |
| 02/01/2000 | US6020244 Channel dopant implantation with automatic compensation for variations in critical dimension |
| 02/01/2000 | US6020243 Zirconium and/or hafnium silicon-oxynitride gate dielectric |
| 02/01/2000 | US6020239 Pillar transistor incorporating a body contact |
| 02/01/2000 | US6020233 Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same |
| 02/01/2000 | US6020229 Semiconductor device method for manufacturing |
| 02/01/2000 | US6020227 Fabrication of multiple field-effect transistor structure having local threshold-adjust doping |
| 02/01/2000 | US6020225 Method of manufacturing array substrate of a liquid crystal display device |
| 02/01/2000 | US6020224 Method for making thin film transistor |
| 02/01/2000 | US6020223 Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
| 02/01/2000 | US6020222 Silicon oxide insulator (SOI) semiconductor having selectively linked body |
| 02/01/2000 | US6020214 Method for manufacturing thin film transistor array substrate |
| 02/01/2000 | US6020213 Method for making ferroelectric semiconductor device |
| 02/01/2000 | US6020111 Method of manufacturing semiconductor device with patterned lamination of Si film and metal film |
| 02/01/2000 | US6020050 With a membrane resting on metallic supports. |
| 02/01/2000 | US6020024 Nitrided layer prevents the formation of an oxide at the substrate interface and has a dielectric constant greater than 3.9. |
| 02/01/2000 | US6019796 Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
| 01/27/2000 | WO2000004598A2 Semi-conductor element with an emitter area and a stop zone in a pre-mounted position thereto |
| 01/27/2000 | WO2000004597A2 Asymmetrically blocking power semiconductor component |
| 01/27/2000 | WO2000004596A2 Power semiconductor component for high blocking voltages |
| 01/27/2000 | WO2000004587A2 Nitride based transistors on semi-insulating silicon carbide substrates |
| 01/27/2000 | WO2000004586A1 Rare-earth electrical contacts for semiconductor devices |
| 01/27/2000 | WO2000004575A2 Collimated sputtering of semiconductor and other films |
| 01/27/2000 | WO2000004574A1 Improved gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| 01/27/2000 | WO2000004572A1 Method for manufacturing thin film semiconductor device, method for manufacturing display, method for manufacturing thin film transistor, and method for forming semiconductor thin film |
| 01/27/2000 | CA2334823A1 Nitride based transistors on semi-insulating silicon carbide substrates |
| 01/26/2000 | EP0975024A2 Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| 01/26/2000 | EP0975023A1 Electrostatic discharge protection for salicided devices and method of making same |
| 01/26/2000 | EP0975022A1 Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors, with salicided junctions |
| 01/26/2000 | EP0975013A2 Method of manufacturing an oxide layer on a GaAs-based semiconductor body |
| 01/26/2000 | EP0974166A1 Nonvolatile semiconductor memory |
| 01/26/2000 | EP0974165A2 Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
| 01/26/2000 | EP0974164A2 Thin film transistors and electronic devices comprising such |
| 01/26/2000 | EP0974160A1 Process of manufacturing a semiconductor device including a buried channel field effect transistor |
| 01/26/2000 | EP0974159A1 Mos transistor with high doping gradient under the grid |
| 01/26/2000 | EP0974158A2 Method of manufacturing a semiconductor device |
| 01/26/2000 | EP0974147A1 Electrically erasable nonvolatile memory |
| 01/26/2000 | EP0974146A1 Nonvolatile memory |
| 01/26/2000 | EP0617363B1 Defective cell substitution in EEprom array |
| 01/26/2000 | CN1242904A Display type image sensor |
| 01/26/2000 | CN1242874A lateral bipolar field effect mode hydrid transistor and method for mfg. same |
| 01/26/2000 | CN1242608A Field effect transistor |
| 01/26/2000 | CN1242607A Non-volatile semiconductor memory device and process for producing the same |
| 01/26/2000 | CN1048820C Method for making multi-layer amorphous silicon |
| 01/25/2000 | US6018272 Linearization of resistance |
| 01/25/2000 | US6018195 MOS gate structure semiconductor device |
| 01/25/2000 | US6018191 Semiconductor device |
| 01/25/2000 | US6018185 Semiconductor device with element isolation film |
| 01/25/2000 | US6018182 Multilayer |
| 01/25/2000 | US6018181 Thin film transistor and manufacturing method thereof |
| 01/25/2000 | US6018179 Transistors having a scaled channel length and integrated spacers with enhanced silicidation properties |
| 01/25/2000 | US6018176 Vertical transistor and memory cell |
| 01/25/2000 | US6018175 Gapped-plate capacitor |
| 01/25/2000 | US6018174 Bottle-shaped trench capacitor with epi buried layer |
| 01/25/2000 | US6018172 Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
| 01/25/2000 | US6018171 Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same |