| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/15/2000 | US6025617 Microelectronic devices having increased impurity concentration between a metal silicide contact surface |
| 02/15/2000 | US6025615 Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
| 02/15/2000 | US6025614 Amplifier semiconductor element, method for fabricating the same, and amplifier semiconductor device |
| 02/15/2000 | US6025613 Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same |
| 02/15/2000 | US6025612 NAND or NOR compound semiconductor memory |
| 02/15/2000 | US6025611 Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes |
| 02/15/2000 | US6025608 Silicon nitride subbing layer |
| 02/15/2000 | US6025607 Thin-film transistor and liquid crystal display device |
| 02/15/2000 | US6025604 Fine projection structure and fabricating method thereof |
| 02/15/2000 | US6025596 Method for measuring epitaxial film thickness of multilayer epitaxial wafer |
| 02/15/2000 | US6025280 Use of SiD4 for deposition of ultra thin and controllable oxides |
| 02/15/2000 | US6025265 Method of forming a landing pad structure in an integrated circuit |
| 02/15/2000 | US6025264 Forming organic low-k dielectric layer over conductive layer on semiconductor substrate, forming opening, forming doped silicon barrier layer over sides, depositing second barrier layer and conductive layer, polishing to expose dielectric |
| 02/15/2000 | US6025254 Low resistance gate electrode layer and method of making same |
| 02/15/2000 | US6025253 Differential poly-edge oxidation for stable SRAM cells |
| 02/15/2000 | US6025251 Method for producing a plurality of semiconductor components |
| 02/15/2000 | US6025242 Fabrication of semiconductor device having shallow junctions including an insulating spacer by thermal oxidation creating taper-shaped isolation |
| 02/15/2000 | US6025238 Using nitrogen-rich punchthrough region to inhibit diffusion of dopants used in forming channel region |
| 02/15/2000 | US6025237 Methods of forming field effect transistors having graded drain region doping profiles therein |
| 02/15/2000 | US6025235 Short channel transistor having resistive gate extensions |
| 02/15/2000 | US6025233 Method of manufacturing a semiconductor device |
| 02/15/2000 | US6025232 Methods of forming field effect transistors and related field effect transistor constructions |
| 02/15/2000 | US6025231 Self aligned DMOS transistor and method of fabrication |
| 02/15/2000 | US6025230 High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes |
| 02/15/2000 | US6025229 Method of fabricating split-gate source side injection flash memory array |
| 02/15/2000 | US6025224 Device with asymmetrical channel dopant profile |
| 02/15/2000 | US6025223 Methods of forming high dielectric capacitors |
| 02/15/2000 | US6025217 Forming uniform polycrystalline semiconductor thin film by laser annealing amorphous film |
| 02/15/2000 | US6025215 Method of making field effect transistors |
| 02/15/2000 | US6025211 Setting surface other than element forming region to be non-hydrogen-terminated insulating region, isolating elements formed thereon |
| 02/15/2000 | US6024620 Field emission displays with reduced light leakage |
| 02/10/2000 | WO2000007248A1 High electron mobility transistor |
| 02/10/2000 | WO2000007245A1 Power semiconductor having a reduced reverse current |
| 02/10/2000 | WO2000007239A1 Integrated component, composite body consisting of an integrated component and a conductive structure, chip card and method for producing the integrated component |
| 02/10/2000 | WO2000007237A1 METHOD OF MAKING HIGH PERFORMANCE MOSFET USING Ti-LINER TECHNIQUE |
| 02/10/2000 | WO2000007221A2 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 02/10/2000 | WO2000007028A1 Micro-mechanical semiconductor accelerometer |
| 02/10/2000 | WO2000006983A1 Flexible silicon strain gage |
| 02/10/2000 | WO2000006812A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
| 02/10/2000 | WO1999067827A3 Semiconductor structure and procedure for minimising non-idealities |
| 02/10/2000 | WO1999066540A3 An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
| 02/10/2000 | WO1999036941A3 Trench isolation for micromechanical devices |
| 02/10/2000 | DE19935143A1 Bipolar transistor with high negative resistance and improved high frequency characteristics at increased room temperatures |
| 02/10/2000 | DE19908477A1 Semiconductor component, e.g. free wheel diode (FWD), used as intelligent power module or component with doped substrate |
| 02/10/2000 | DE19845003C1 Vertical MOS transistor in semiconductor substrate |
| 02/10/2000 | DE19835528A1 Verfahren zur Einstellung der Trägerlebensdauer in einem Halbleiterbauelement Method for adjusting the carrier lifetime in a semiconductor device |
| 02/10/2000 | CA2338744A1 Flexible silicon strain gage |
| 02/10/2000 | CA2337029A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
| 02/10/2000 | CA2303044A1 Micro-mechanical semiconductor accelerometer |
| 02/09/2000 | EP0978871A2 A low power packaging design |
| 02/09/2000 | EP0978869A2 Method for forming a minute resist pattern and method for forming a gate electrode |
| 02/09/2000 | EP0978868A1 Process for adjusting the carrier lifetime in a semiconductor device |
| 02/09/2000 | EP0978159A1 Device for limiting electrical alternating currents, especially during short-circuits |
| 02/09/2000 | EP0978145A1 Semi-conductor device and use thereof |
| 02/09/2000 | EP0978144A2 Semiconductor device comprising a mos transistor |
| 02/09/2000 | EP0978143A2 Semiconductor device comprising a half-bridge circuit |
| 02/09/2000 | EP0775304B1 Method of producing cavity structures |
| 02/09/2000 | CN1244041A Semiconductor device and manufacture thereof |
| 02/09/2000 | CN1244040A Channel capacitor with epitaxial cover layer |
| 02/09/2000 | CN1244027A Method for transferring miniature machined block including integrated circuits |
| 02/08/2000 | US6023575 Method of simulating semiconductor device |
| 02/08/2000 | US6023103 Chip-scale carrier for semiconductor devices including mounted spring contacts |
| 02/08/2000 | US6023093 Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof |
| 02/08/2000 | US6023092 Semiconductor resistor for withstanding high voltages |
| 02/08/2000 | US6023090 Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region |
| 02/08/2000 | US6023089 Semiconductor memory device having a SOI structure |
| 02/08/2000 | US6023088 Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer |
| 02/08/2000 | US6023087 Thin film transistor having an insulating membrane layer on a portion of its active layer |
| 02/08/2000 | US6023086 Semiconductor transistor with stabilizing gate electrode |
| 02/08/2000 | US6023082 Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
| 02/08/2000 | US6023079 Multilayer |
| 02/08/2000 | US6023078 Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability |
| 02/08/2000 | US6023075 Electro-optical device and method for manufacturing the same |
| 02/08/2000 | US6023074 Active matrix display having storage capacitor associated with each pixel transistor |
| 02/08/2000 | US6022813 Method and apparatus for manufacturing semiconductor devices |
| 02/08/2000 | US6022798 Method of forming an interconnect using thin films of Ti and TiN |
| 02/08/2000 | US6022796 Geometrical control of device corner threshold |
| 02/08/2000 | US6022790 Semiconductor process integration of a guard ring structure |
| 02/08/2000 | US6022785 Method of fabricating a metal-oxide-semiconductor transistor |
| 02/08/2000 | US6022784 Method for manufacturing a semiconductor device |
| 02/08/2000 | US6022783 NMOS field effect transistors and methods of forming NMOS field effect transistors |
| 02/08/2000 | US6022782 Method for forming integrated circuit transistors using sacrificial spacer |
| 02/08/2000 | US6022780 Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof |
| 02/08/2000 | US6022778 Process for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells |
| 02/08/2000 | US6022777 Method of making semiconductor device |
| 02/08/2000 | US6022774 Forming conductor pattern on semiconductor;oxidation resistant overcoat, dielectrics |
| 02/08/2000 | US6022773 Method of making a semiconductor device |
| 02/08/2000 | US6022771 Fabrication of semiconductor device having shallow junctions and sidewall spacers creating taper-shaped isolation where the source and drain regions meet the gate regions |
| 02/08/2000 | US6022770 NVRAM utilizing high voltage TFT device and method for making the same |
| 02/08/2000 | US6022767 Semiconductor device with insulated gate electrode and method of fabricating the same |
| 02/08/2000 | US6022765 Semiconductor device having a SOI structure and a manufacturing method thereof |
| 02/08/2000 | US6022764 Exposure apparatus and method for forming thin film transistor |
| 02/08/2000 | US6022754 Support for active region over a semocnductor substrate |
| 02/08/2000 | US6022646 Liquid crystal display |
| 02/08/2000 | US6022586 Supplying first film-forming gases into process chamber of vessel while heating the chamber so as to form a first pre-coating film on the inner surface of the process vessel, loading semiconductor wafer into chamber, coating |
| 02/08/2000 | US6021675 Resonating structure and method for forming the resonating structure |
| 02/08/2000 | US6021670 Semiconductor acceleration detecting device with shock absorbing structure |
| 02/03/2000 | WO2000005768A1 J-fet semiconductor device |
| 02/03/2000 | WO2000005767A1 Semiconductor device and method for fabricating the same |
| 02/03/2000 | WO2000005766A2 Silicon-on-insulator (soi) hybrid transistor device structure |