| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/29/2000 | US6030895 Method of making a soft metal conductor |
| 02/29/2000 | US6030894 A diffusion layer of the opposite conductivity type formed on silicon substrate, dilectric covering the substrate surface, a hole is formed in dielectric layer which reaches the diffusion layer, forming silicon/germenium silicide/silicon |
| 02/29/2000 | US6030888 Method of fabricating high-voltage junction-isolated semiconductor devices |
| 02/29/2000 | US6030886 Growth of GaN on a substrate using a ZnO buffer layer |
| 02/29/2000 | US6030876 Semiconductor device and method of manufacture thereof |
| 02/29/2000 | US6030875 Method for making semiconductor device having nitrogen-rich active region-channel interface |
| 02/29/2000 | US6030874 Doped polysilicon to retard boron diffusion into and through thin gate dielectrics |
| 02/29/2000 | US6030873 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof |
| 02/29/2000 | US6030870 High density MOS technology power device |
| 02/29/2000 | US6030869 Method for fabricating nonvolatile semiconductor memory device |
| 02/29/2000 | US6030864 Vertical NPN transistor for 0.35 micrometer node CMOS logic technology |
| 02/29/2000 | US6030850 Method for manufacturing a sensor |
| 02/29/2000 | CA2182366C Electromagnetic radiation imaging device using dual gate thin film transistors |
| 02/24/2000 | WO2000010204A1 Trench-gate semiconductor device |
| 02/24/2000 | WO2000010198A1 Method of selectively forming silicide |
| 02/24/2000 | WO2000010196A1 Manufacture of electronic devices comprising thin-film circuit elements |
| 02/24/2000 | WO2000010020A1 Method for measuring two-dimensional potential distribution in cmos semiconductor components |
| 02/24/2000 | WO2000009440A1 Micromechanical sensor and corresponding production method |
| 02/24/2000 | WO2000003560A3 Method for producing a filled recess in a material layer, integrated circuit produced using said method |
| 02/24/2000 | WO1999054918A3 Manufacture of trench-gate semiconductor devices |
| 02/24/2000 | DE19837944A1 Verfahren zur Fertigung eines Halbleiterbauelements A method of manufacturing a semiconductor device |
| 02/24/2000 | DE19837715A1 High dielectric constant, low dielectric loss ceramic material, used as a charge storage material for DRAMs, comprises a mixture of strontium titanate and lead-magnesium niobate |
| 02/23/2000 | EP0981166A2 JFET transistor |
| 02/23/2000 | EP0981165A1 Thin film transistors |
| 02/23/2000 | EP0981155A2 Method for manufacturing a semiconductor isolation layer and semiconductor device comprising said semiconductor isolation layer |
| 02/23/2000 | EP0981052A2 Semiconductor accelerometer switch and a method of producing the same |
| 02/23/2000 | EP0980589A1 A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 02/23/2000 | EP0980588A1 Device based on quantic islands and method for making same |
| 02/23/2000 | CN1245587A Film-like composite structure and method of manufacture thereof |
| 02/23/2000 | CN1245586A Bumps in grooves for elastic positioning |
| 02/23/2000 | CN1245559A Method for making micro-mechanic sensor |
| 02/22/2000 | US6028986 Methods of designing and fabricating intergrated circuits which take into account capacitive loading by the intergrated circuit potting material |
| 02/22/2000 | US6028788 Flash memory device |
| 02/22/2000 | US6028629 Solid-state imaging device and method of manufacturing the same |
| 02/22/2000 | US6028580 Liquid crystal display device |
| 02/22/2000 | US6028348 Low thermal impedance integrated circuit |
| 02/22/2000 | US6028345 Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer |
| 02/22/2000 | US6028344 Bipolar transistor on a semiconductor-on-insulator substrate |
| 02/22/2000 | US6028342 ROM diode and a method of making the same |
| 02/22/2000 | US6028338 Semiconductor integrated circuit device with electrostatic damage protection |
| 02/22/2000 | US6028337 Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region |
| 02/22/2000 | US6028335 Semiconductor device |
| 02/22/2000 | US6028333 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
| 02/22/2000 | US6028332 Semiconductor type yaw rate sensor |
| 02/22/2000 | US6028329 Bipolar junction transistor device and a method of fabricating the same |
| 02/22/2000 | US6028328 HEMT double hetero structure |
| 02/22/2000 | US6028326 Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film |
| 02/22/2000 | US6028325 Semiconductor device contact registration structure |
| 02/22/2000 | US6027993 Method of forming an opening in an insulation film over a semiconductor substrate |
| 02/22/2000 | US6027992 Semiconductor device having a gallium and nitrogen containing barrier layer and method of manufacturing thereof |
| 02/22/2000 | US6027991 Method of making a silicide semiconductor device with junction breakdown prevention |
| 02/22/2000 | US6027987 Method of manufacturing a crystalline semiconductor |
| 02/22/2000 | US6027978 Method of making an IGFET with a non-uniform lateral doping profile in the channel region |
| 02/22/2000 | US6027977 Method of fabricating semiconductor device with MIS structure |
| 02/22/2000 | US6027976 Process for making semiconductor device having nitride at silicon and polysilicon interfaces |
| 02/22/2000 | US6027975 Process for fabricating vertical transistors |
| 02/22/2000 | US6027974 Nonvolatile memory |
| 02/22/2000 | US6027972 Method for producing very small structural widths on a semiconductor substrate |
| 02/22/2000 | US6027965 Method of manufacturing an integrated circuit with MOS transistors having high breakdown voltages, and with precision resistors |
| 02/22/2000 | US6027961 CMOS semiconductor devices and method of formation |
| 02/22/2000 | US6027960 Cleaning a non-monocrystal silicon film formed on a substrate, then moving substrate during irradiation by linear laser beam to overlappingly scan surface and crystallize film within an oxygen-containing atmosphere |
| 02/22/2000 | US6027953 Lateral PN arrayed digital X-ray image sensor |
| 02/22/2000 | US6027951 Method of making high aspect ratio probes with self-aligned control electrodes |
| 02/22/2000 | US6027947 Partially or completely encapsulated top electrode of a ferroelectric capacitor |
| 02/22/2000 | US6027860 Method for forming a structure using redeposition of etchable layer |
| 02/22/2000 | CA2232199C Power converter with voltage drive switching element |
| 02/17/2000 | WO2000008691A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 02/17/2000 | WO2000008689A1 Thin film transistors |
| 02/17/2000 | WO2000008677A1 Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
| 02/17/2000 | WO2000008674A2 Mosfet having self-aligned gate and buried shield and method of making same |
| 02/17/2000 | WO2000008649A1 Memory device using a transistor and its fabrication method |
| 02/17/2000 | DE19935947A1 Multilevel interconnection of a ferroelectric memory device formation method, produces interconnections of same material as ferroelectric capacitor electrodes |
| 02/17/2000 | DE19837490A1 Method to measure two-dimensional potential distribution in CMOS semiconductor element and determine two-dimensional doping distribution, uses electron holography to measure phase of electron wave in transmission electron microscope |
| 02/16/2000 | EP0980100A2 Trench capacitor for integrated circuit |
| 02/16/2000 | EP0980096A1 Board for mounting semiconductor element, method for manufacturing the same, and semiconductor device |
| 02/16/2000 | EP0980093A2 Fabrication of conductivity enhanced MOS-gated semiconductor devices |
| 02/16/2000 | EP0980091A2 A method for decreasing channel hot carrier degradation |
| 02/16/2000 | EP0979531A1 Silicon carbide field conrolled bipolar switch |
| 02/16/2000 | EP0979530A2 Semiconductor switch devices and their manufacture |
| 02/16/2000 | EP0979529A1 DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER |
| 02/16/2000 | EP0979527A2 Thin film transistors and electronic devices comprising such |
| 02/16/2000 | CN1244948A Method and device for activating semiconductor impurities |
| 02/16/2000 | CN1244733A 低压有源半导体体器件 Low body active semiconductor devices |
| 02/16/2000 | CN1244725A Method for regulating carrier life in semiconductor element |
| 02/15/2000 | US6026049 Semiconductor memory with sensing stability |
| 02/15/2000 | US6026028 Hot carrier injection programming and negative gate voltage channel erase flash EEPROM structure |
| 02/15/2000 | US6026017 Compact nonvolatile memory |
| 02/15/2000 | US6026013 Quantum random address memory |
| 02/15/2000 | US6025892 Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same |
| 02/15/2000 | US6025891 Liquid crystal display device |
| 02/15/2000 | US6025646 Vertical MOSFET having penetrating wiring layers |
| 02/15/2000 | US6025638 Structure for precision multichip assembly |
| 02/15/2000 | US6025635 Short channel transistor having resistive gate extensions |
| 02/15/2000 | US6025634 Integrated circuit having formed therein low contact leakage and low contact resistance integrated circuit device electrode |
| 02/15/2000 | US6025632 Semiconductor integrated circuit with tungston silicide nitride thermal resistor |
| 02/15/2000 | US6025629 Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor |
| 02/15/2000 | US6025628 High breakdown voltage twin well device with source/drain regions widely spaced from fox regions |
| 02/15/2000 | US6025627 Alternate method and structure for improved floating gate tunneling devices |
| 02/15/2000 | US6025625 Single-poly EEPROM cell structure operations and array architecture |
| 02/15/2000 | US6025622 Conductivity modulated MOSFET |