Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2000
03/08/2000CN1246731A Chip dimention packaging and method for preparing wafer-class chip dimention packing
03/08/2000CN1246724A Plasma elched equipment and liquid crystal display module manufactured by the equipment
03/08/2000CN1246709A Storage structure in ferroelectric nonvolatile memory and its read method
03/08/2000CN1050228C Thin film transistor and method of fabrication thereof
03/08/2000CN1050226C 半导体器件 Semiconductor devices
03/08/2000CN1050222C Method for fabricating semiconductor device
03/07/2000US6035115 Method for performing simulation of a semiconductor integrated circuit using a relative variation model
03/07/2000US6034896 Method of fabricating a fast programmable flash E2 PROM cell
03/07/2000US6034894 Nonvolatile semiconductor storage device having buried electrode within shallow trench
03/07/2000US6034893 Non-volatile memory cell having dual avalanche injection elements
03/07/2000US6034892 Nonvolatile memory cell and method for programming and/or verifying the same
03/07/2000US6034748 Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same
03/07/2000US6034421 Semiconductor device including molded IC fixed to casing
03/07/2000US6034415 Lateral RF MOS device having a combined source structure
03/07/2000US6034412 Semiconductor device and method of fabricating the same
03/07/2000US6034410 MOSFET structure with planar surface
03/07/2000US6034402 Semiconductor device
03/07/2000US6034398 Semiconductor device and manufacturing method of the same
03/07/2000US6034396 Ultra-short channel recessed gate MOSFET with a buried contact
03/07/2000US6034395 Semiconductor device having a reduced height floating gate
03/07/2000US6034389 Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
03/07/2000US6034388 Depleted polysilicon circuit element and method for producing the same
03/07/2000US6034386 Field effect transistor and method of manufacturing the same
03/07/2000US6034385 Current-limiting semiconductor configuration
03/07/2000US6034383 High power density microwave HBT with uniform signal distribution
03/07/2000US6034382 Current-driven semiconductor device and integrated circuit
03/07/2000US6034381 Network of triacs with gates referenced with respect to a common opposite face electrode
03/07/2000US6033976 Intermetallic
03/07/2000US6033963 Patterning; doping; overcoating with dielectric; polishing
03/07/2000US6033959 Method of fabricating a multiple T-gate MOSFET device
03/07/2000US6033957 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
03/07/2000US6033955 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
03/07/2000US6033954 Method of fabricating flash memory cell
03/07/2000US6033948 Method of making high voltage metal oxide silicon field effect transistor
03/07/2000US6033946 Method for fabricating an isolated NMOS transistor on a digital BiCMOS process
03/07/2000US6033942 Method of forming a metal-semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages
03/07/2000US6033941 Method of forming a thin film transistor with asymmetrically arranged gate electrode and offset region
03/07/2000US6033940 Anodization control for forming offset between semiconductor circuit elements
03/07/2000US6033929 Method for making II-VI group compound semiconductor device
03/07/2000US6033925 Method for manufacturing a SOI-type semiconductor structure
03/07/2000US6033920 Method of manufacturing a high dielectric constant capacitor
03/07/2000US6033537 Sputtering target and method of manufacturing a semiconductor device
03/07/2000US6033489 Semiconductor substrate and method of making same
03/07/2000US6033231 Semiconductor device having a pedestal and method of forming
03/07/2000US6033202 Mold for non - photolithographic fabrication of microstructures
03/07/2000CA2196269C Pin diode variable attenuator
03/02/2000WO2000011722A1 Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry
03/02/2000WO2000011720A1 Power transistor device
03/02/2000WO2000011719A1 Semiconductor chip with surface coating
03/02/2000WO2000011709A1 Thin film transistors and their manufacture
03/02/2000WO2000011708A1 Semiconductor device having oxide-nitride gate insulating layer and method of manufacture thereof
03/02/2000WO2000011677A1 Electrically erasable nonvolatile memory
03/02/2000WO2000011441A2 Pressure sensor and method of forming the same
03/02/2000WO2000011376A2 Control device in a motor vehicle
03/02/2000WO1999067825A3 Methods of fabricating silicon carbide power devices by controlled annealing
03/02/2000WO1999054919A3 Manufacture of field-effect semiconductor devices
03/02/2000DE19939244A1 Source-drain regions for sub-micron CMOS devices are formed using a reduced number of masking steps for forming a lightly p-doped drain region for a PMOS and a halo region for an NMOS
03/02/2000DE19838108A1 High-voltage (HV) semiconductor edge structure e.g. for MOSFET power transistor
03/02/2000DE19837395A1 Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements A process for producing a semiconductor insulation layer and a semiconductor insulation layer containing this semiconductor device
03/02/2000CA2341102A1 Electrically erasable nonvolatile memory
03/01/2000EP0982779A2 Memory structure in ferroelectric nonvolatile memory and readout method therefor
03/01/2000EP0982778A1 A semiconductor device having nonvolatile memory cells each of which comprises a memory transistor and a selection transistor
03/01/2000EP0982776A2 ESD protection thyristor with trigger diode
03/01/2000EP0982770A2 Physical isolation of regions of a semiconductor substrate
03/01/2000EP0982769A2 Microdevice and structural components of the same
03/01/2000EP0982768A1 Process for adjusting the carrier lifetime in a semiconductor device
03/01/2000EP0982764A2 Method of forming a gate oxide layer for transistors
03/01/2000EP0982576A1 Sensor and method of producing the same
03/01/2000EP0981755A1 Acceleration sensor
03/01/2000CN2366973Y Electrostatic inductor for long lime closing type goove grating
03/01/2000CN1246202A Flip-chip type connection with elastic contacts
03/01/2000CN1245976A 半导体器件 Semiconductor devices
03/01/2000CN1245974A Method for manufacturing semiconductor element
03/01/2000CN1245972A Method for making film semiconductor device
03/01/2000CN1050006C Semiconductor device and method of mfg. the same
02/2000
02/29/2000US6031774 Internal power supply voltage generating ciruit and the method for controlling thereof
02/29/2000US6031771 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
02/29/2000US6031764 Nonvolatile semiconductor memory device
02/29/2000US6031589 Liquid crystal display device and the fabrication method thereof
02/29/2000US6031571 Solid-state imaging device
02/29/2000US6031513 Liquid crystal display
02/29/2000US6031512 Color filter structure for color display device
02/29/2000US6031291 Common contact hole structure in semiconductor device
02/29/2000US6031290 Electronic circuit
02/29/2000US6031287 Contact structure and memory element incorporating the same
02/29/2000US6031276 Semiconductor device and method of manufacturing the same with stable control of lifetime carriers
02/29/2000US6031273 All-metal, giant magnetoresistive, solid-state component
02/29/2000US6031272 MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
02/29/2000US6031271 High yield semiconductor device and method of fabricating the same
02/29/2000US6031269 Quadruple gate field effect transistor structure for use in integrated circuit devices
02/29/2000US6031268 Complementary semiconductor device and method for producing the same
02/29/2000US6031266 Semiconductor device with conductive sidewall film
02/29/2000US6031265 Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area
02/29/2000US6031264 Nitride spacer technology for flash EPROM
02/29/2000US6031263 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
02/29/2000US6031261 Silicon-on-insulator-device and fabrication method thereof
02/29/2000US6031256 An elevated emitter emission efficiency and lowered compensation voltage at the same time
02/29/2000US6031255 Bipolar transistor stabilized with electrical insulating elements
02/29/2000US6031254 Monolithic assembly of an IGBT transistor and a fast diode
02/29/2000US6031245 Semiconductor device
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