Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2000
03/16/2000DE19843956C1 Edging for MOSFETs, high blocking diodes, high voltage transistors, and IGBTs has a sieve-like field plate provided over the surface on or in an insulating layer
03/16/2000DE19841445A1 Three-level word line decoder circuit for EEPROM
03/16/2000DE19840031A1 Semiconductor component, e.g. containing double-diffused metal-oxide semiconductor transistors, has a region for creating a double drift field from an underlying substrate and from an overlying semiconductor layer towards the region
03/16/2000DE19839971A1 Edge structure for semiconductor element
03/16/2000DE19839970A1 Edge structure and drift region, e.g. for a junction-trench MOSFET, diode, IGBT or silicon carbide JFET, comprises multilevel embedded regions which are connected below active zones and are floating elsewhere
03/16/2000DE19839969A1 Siliziumcarbid-Junction-Feldeffekttransistor Silicon carbide junction field effect transistor
03/16/2000CA2343322A1 Battery polarity insensitive integrated circuit amplifier
03/15/2000EP0986067A2 Nonvolatile semiconductor memory
03/15/2000EP0985232A2 Electronic devices comprising thin-film transistors
03/15/2000EP0985229A1 Method for mos transistor isolation
03/15/2000EP0985228A1 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive
03/15/2000EP0985225A2 Integrated circuit, components thereof and manufacturing method
03/15/2000EP0985151A1 Microsensor with resonator structure
03/15/2000CN1247632A Well boosting threshold voltage rollup
03/15/2000CN1247386A Pressure converter and its mfg. method
03/14/2000US6038172 Memory device with dummy cell transistor
03/14/2000US6038171 Field emission erasable programmable read-only memory
03/14/2000US6038170 Semiconductor integrated circuit device including a plurality of divided sub-bit lines
03/14/2000US6038160 Ferroelectric semiconductor memory device
03/14/2000US6038008 Method of making LCD having roughened steps of the protection layer
03/14/2000US6037924 Matrix type liquid-crystal display unit
03/14/2000US6037885 Digital/analog converter using a floating gate MOS neuron transistor with capacitive coupling
03/14/2000US6037826 Control of saturation of integrated bipolar transistors
03/14/2000US6037718 Display unit having transistor of organic semiconductor stacked on organic electroluminescence element
03/14/2000US6037663 Ohmic electrode structure for Inx Ga1-x As layer
03/14/2000US6037651 Semiconductor device with multi-level structured insulator and fabrication method thereof
03/14/2000US6037650 Variable capacitance semiconductor device
03/14/2000US6037647 Semiconductor device having an epitaxial substrate and a fabrication process thereof
03/14/2000US6037646 High-frequency GaAs substrate based schottky barrier diodes
03/14/2000US6037639 Fabrication of integrated devices using nitrogen implantation
03/14/2000US6037635 Semiconductor device with transistors formed on different layers
03/14/2000US6037634 Semiconductor device with first and second elements formed on first and second portions
03/14/2000US6037633 Semiconductor device
03/14/2000US6037632 Semiconductor device
03/14/2000US6037631 Semiconductor component with a high-voltage endurance edge structure
03/14/2000US6037630 Semiconductor device with gate electrode portion and method of manufacturing the same
03/14/2000US6037629 Trench transistor and isolation trench
03/14/2000US6037628 Semiconductor structures with trench contacts
03/14/2000US6037627 MOS semiconductor device
03/14/2000US6037626 Semiconductor neuron with variable input weights
03/14/2000US6037625 Semiconductor device with salicide structure and fabrication method thereof
03/14/2000US6037619 Field effect transistor and high-frequency power amplifier having same
03/14/2000US6037618 Intergrated field effect transistor device for high power and voltage amplification of RF signals
03/14/2000US6037617 SOI IGFETs having raised integration level
03/14/2000US6037616 Bipolar transistor having base contact layer in contact with lower surface of base layer
03/14/2000US6037615 Metal semiconductor FET having doped A1GaAs layer between channel layer and A1GaAs buffer layer
03/14/2000US6037613 Bidirectional thyristor device
03/14/2000US6037611 Thin film transistor and its fabrication
03/14/2000US6037610 Transistor and semiconductor device having columnar crystals
03/14/2000US6037608 Liquid crystal display device with crossover insulation
03/14/2000US6037605 Semiconductor device and method of manufacturing the same
03/14/2000US6037604 Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector
03/14/2000US6037247 Method of manufacturing semiconductor device having a self aligned contact
03/14/2000US6037245 High-speed semiconductor device having a dual-layer gate structure and a fabrication process thereof
03/14/2000US6037242 Forming a buffer layer of aluminum-indium-arsenic on a gallium-arsenic substrate in an amorphous state, annealing the amorphous buffer layer to crystallize into single crystal, forming second and third single crystal buffer layers
03/14/2000US6037235 Forming a silicon nitride film on a silicon surface of a substrate, while heating the substrate, exposing silicon nitride film to hydrogen and nitrogen, forming a capacitor electrode above the exposed nitride film
03/14/2000US6037233 Metal-encapsulated polysilicon gate and interconnect
03/14/2000US6037232 Semiconductor device having elevated silicidation layer and process for fabrication thereof
03/14/2000US6037231 Method for forming a MOS structure having sidewall source/drain and embedded gate
03/14/2000US6037230 Method to reduce diode capacitance of short-channel MOSFETS
03/14/2000US6037226 Method of making contactless nonvolatile semiconductor memory with asymmetrical floating gate
03/14/2000US6037221 Device and fabricating method of non-volatile memory
03/14/2000US6037205 Forming a nitride film on a semiconductor layer by annealing, oxidizing the nitride film through annealing using nitrogen oxide gas to form oxidized nitride film and insulating semiconductor layer from conductive layer subsquently formed
03/14/2000US6037202 Method for growing an epitaxial layer of material using a high temperature initial growth phase and a low temperature bulk growth phase
03/14/2000US6037201 Method for manufacturing mixed-mode devices
03/14/2000US6037200 Compound semiconductor device and fabrication method
03/14/2000US6037197 Preparation method of semiconductor device
03/14/2000US6037196 Process for producing an integrated circuit device with at least one MOS transistor
03/14/2000US6037195 Process of producing thin film transistor
03/14/2000US6036566 Method of fabricating flat FED screens
03/09/2000WO2000013236A2 Layered dielectric on silicon carbide semiconductor structures
03/09/2000WO2000013235A1 Ternary nitride-carbide barrier layers
03/09/2000WO2000013234A1 Integrated circuits
03/09/2000WO2000013227A2 Method of manufacturing a semiconductor device with a bipolar transistor
03/09/2000WO2000013213A1 Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits
03/09/2000WO2000013212A1 Voltage-cycling recovery of process-damaged ferroelectric films
03/09/2000WO2000013205A2 Sensor for measuring a magnetic field
03/09/2000WO2000012987A2 Micromechanical component protected against environmental influences
03/09/2000WO2000012428A1 Micromechanical component with sealed membrane openings
03/09/2000WO1999066539A3 Lateral thin-film soi devices with graded top oxide and graded drift region
03/09/2000DE19939484A1 Schottky diode with barrier metal layer leaving five micron guard ring at edge of p-type diffusion layer
03/09/2000DE19842106A1 Vertikaler Bipolartransistor und Verfahren zu seiner Herstellung A vertical bipolar transistor and method for its preparation
03/09/2000DE19840676A1 Field effect transistor production comprises thin-layer technique for liquid crystal display with active matrix
03/09/2000DE19840239A1 Electrostatic discharge damage protected power semiconductor device, especially IGBT, MOSFET or diode, comprising an ohmic contact metallization of high melting metal
03/09/2000DE19839671A1 Sensor zur Messung eines Magnetfeldes Sensor for measuring a magnetic field
03/09/2000DE19839122A1 Vor Umwelteinflüssen geschützter mikromechanischer Sensor Protected from environmental influences micromechanical sensor
03/09/2000CA2341623A1 Sensor for measuring a magnetic field
03/09/2000CA2340653A1 Layered dielectric on silicon carbide semiconductor structures
03/08/2000EP0984492A2 Semiconductor device comprising organic resin and process for producing semiconductor device
03/08/2000EP0984487A2 Method of making shallow well MOSFET structure
03/08/2000EP0984466A2 Integrated capacitor with high voltage linearity and low series resistance
03/08/2000EP0984317A2 Active matrix display device and semiconductor device
03/08/2000EP0984316A2 Semiconductor apparatus and method for producing it
03/08/2000EP0983613A1 Self-protect thyristor
03/08/2000EP0983612A1 A thermal conducting trench in a semiconductor structure and method for forming the same
03/08/2000EP0983610A1 Method and apparatus for manufacturing a micromechanical device
03/08/2000EP0983594A1 An electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same
03/08/2000EP0983208A1 Material with reduced optical absorption
03/08/2000CN1246962A Manufacturing a heterobipolar transistor and a laser diode on the same sustrate
03/08/2000CN1246732A Blinking memory, method of writing and deleting thereof and manufacturing method thereof
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