Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2000
03/28/2000US6043114 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device
03/28/2000US6043113 Method of forming self-aligned thin film transistor
03/28/2000US6043112 IGBT with reduced forward voltage drop and reduced switching loss
03/28/2000US6042391 High density electrical connectors
03/28/2000US6041653 Acceleration sensor and a method of producing same
03/28/2000CA2117426C Fermi threshold field effect transistor with reduced gate and diffusion capacitance
03/23/2000WO2000016408A1 Semiconductor device and its manufacturing method
03/23/2000WO2000016407A2 Switching transistor with reduced switching losses
03/23/2000WO2000016406A1 Semiconductor device
03/23/2000WO2000016405A1 Semiconductor device and method for driving the same
03/23/2000WO2000016404A1 Lateral bipolar transistor and method of making same.
03/23/2000WO2000016403A1 Semiconductor device and semiconductor structure with contact
03/23/2000WO2000016402A1 Semiconductor structure with contacting
03/23/2000WO2000016399A1 Semiconductor circuit
03/23/2000WO2000016392A1 Method of manufacturing a semiconductor device with a bipolar transistor
03/23/2000WO2000016389A1 Device and method for etching spacers formed upon an integrated circuit gate conductor
03/23/2000WO2000016382A1 Low temperature formation of backside ohmic contacts for vertical devices
03/23/2000WO2000016105A1 Formation of a bridge in a micro-device
03/23/2000WO2000016041A2 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
03/23/2000DE19858759C1 Integrated circuit with nanoscale devices and CMOS device
03/23/2000DE19851866C1 Nonvolatile memory array has series-connected selection and storage transistors and a ferroelectric capacitor connected between a selection transistor connection and a storage transistor control electrode
03/23/2000DE19845793A1 Bipolar transistor, especially a vertical bipolar transistor for high speed applications, produced using an initial low temperature deposition step to form a buffer layer on an insulation layer
03/23/2000DE19845792A1 Producing an amorphous or polycrystalline silicon layer on an insulation region, especially for a bipolar transistor for high speed applications, uses a nucleation layer to improve nucleation
03/23/2000DE19845789A1 Bipolar transistor, especially a vertical bipolar transistor for high speed applications, is produced using selective wet chemical treatment to provide the active emitter region with a surface relief
03/23/2000CA2343446A1 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
03/23/2000CA2343416A1 Low temperature formation of backside ohmic contacts for vertical devices
03/23/2000CA2343308A1 Formation of a bridge in a micro-device
03/22/2000EP0987766A1 Edge structure for a field-effect transistor having a plurality of cells
03/22/2000EP0987764A1 Electrically programmable non-volatile memory cell arrangement
03/22/2000EP0987751A1 Isolation wall between power devices
03/22/2000EP0987746A1 Method of making an integrated circuit comprising an oxide layer on a GaAs-based semiconductor substrate
03/22/2000EP0987740A1 Epitaxial layer for dissolved wafer micromachining process
03/22/2000EP0987722A2 Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same
03/22/2000EP0987653A2 Self assembled nano-devices using DNA
03/22/2000EP0914658A4 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
03/22/2000CN2370569Y Diode
03/22/2000CN1248098A Film semiconductor integrated circuit
03/22/2000CN1248069A Semiconductor device and process for producing the same
03/22/2000CN1248066A Channel condenser with epitaxial buried layer
03/22/2000CN1248038A Semiconductor device and its formaing method
03/22/2000CN1248037A Active matrix display
03/22/2000CN1050702C Transistor structure of semiconductor device
03/22/2000CN1050701C Transistor in semiconductor device and method of making the same
03/22/2000CN1050700C Transistor in semiconductor device and method of making the same
03/22/2000CN1050699C Flash EEPROM cell and manufacturing method thereof
03/22/2000CN1050692C Method for forming junction in high speed EEPROM unit
03/22/2000CN1050691C Method for making transistor of semiconductor device
03/21/2000US6040995 Method of operating a storage cell arrangement
03/21/2000US6040814 Active-matrix liquid crystal display and method of driving same
03/21/2000US6040810 Display device having display and imaging pixels sandwiched between same substrates
03/21/2000US6040629 Semiconductor integrated circuit having silicided elements of short length
03/21/2000US6040619 Semiconductor device including antireflective etch stop layer
03/21/2000US6040617 Structure to provide junction breakdown stability for deep trench devices
03/21/2000US6040610 Semiconductor device
03/21/2000US6040609 Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages
03/21/2000US6040608 Field-effect transistor for one-time programmable nonvolatile memory element
03/21/2000US6040605 Semiconductor memory device
03/21/2000US6040603 Electrostatic discharge protection circuit employing MOSFETs having double ESD implantations
03/21/2000US6040602 Formation of lightly doped regions under a gate
03/21/2000US6040601 High voltage device
03/21/2000US6040600 Trenched high breakdown voltage semiconductor device
03/21/2000US6040599 Insulated trench semiconductor device with particular layer structure
03/21/2000US6040598 High-breakdown-voltage semiconductor apparatus
03/21/2000US6040588 Semiconductor light-emitting device
03/21/2000US6040249 Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy
03/21/2000US6040237 Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge
03/21/2000US6040236 Method for manufacturing silicon thin film conductive element
03/21/2000US6040234 Method of manufacturing semiconductor device without bird beak effect
03/21/2000US6040233 Method of making a shallow trench isolation with thin nitride as gate dielectric
03/21/2000US6040224 Method of manufacturing semiconductor devices
03/21/2000US6040220 Asymmetrical transistor formed from a gate conductor of unequal thickness
03/21/2000US6040219 Method of fabricating power semiconductor device using semi-insulating polycrystalline silicon (SIPOS) film
03/21/2000US6040216 Method (and device) for producing tunnel silicon oxynitride layer
03/21/2000US6040214 Method for making field effect transistors having sub-lithographic gates with vertical side walls
03/21/2000US6040212 Methods of forming trench-gate semiconductor devices using sidewall implantation techniques to control threshold voltage
03/21/2000US6040210 2F-square memory cell for gigabit memory applications
03/21/2000US6040207 Oxide formation technique using thin film silicon deposition
03/21/2000US6040206 The conductive layer has a layered structure of an al-containing metal film and an n-containing mo film.
03/21/2000US6040204 Method of stacking chips with a removable connecting layer
03/21/2000US6040202 Color linear charge coupled device and method for driving the same
03/21/2000US6040200 Method of fabricating semiconductor device having stacked-layered substrate
03/21/2000US6040001 Forming silicon oxide film on silicon substrate by oxidation, forming diamond thin film on polysilicon wiring layer and forming photosensitive pattern
03/21/2000CA2058916C Piezoresistive pressure transducer with a conductive elastomeric seal
03/16/2000WO2000014870A1 Battery polarity insensitive integrated circuit amplifier
03/16/2000WO2000014810A1 Silicon carbide junction field effect transistor
03/16/2000WO2000014809A1 Static induction transistor and its manufacturing method, and power converter
03/16/2000WO2000014808A1 Ferroelectric transistor, its use in a storage cell system and its method of production
03/16/2000WO2000014807A1 High-voltage semiconductor component
03/16/2000WO2000014806A1 Vertical bipolar transistor and method for the production thereof
03/16/2000WO2000014805A1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device
03/16/2000WO2000014803A1 Low trigger and holding voltage scr device for esd protection
03/16/2000WO2000014795A1 Complementary bipolar/cmos epitaxial structure and process
03/16/2000WO2000014791A1 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
03/16/2000WO2000014787A1 Process for making high performance mosfet with an inverted t-shaped gate electrode
03/16/2000WO2000014784A1 Double-pulse laser crystallisation of thin semiconductor films
03/16/2000WO2000014781A1 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
03/16/2000WO2000014780A1 Semiconductor processing method, semiconductor circuitry, and gate stacks
03/16/2000WO2000014600A1 Active matrix liquid crystal device and method for producing the same
03/16/2000WO2000002249A3 Integrated circuit with p-n junctions with reduced defects
03/16/2000DE19912208A1 Field effect semiconductor component, such as MOSFET, with MOS structure in semiconductor layer of first conductivity
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