Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2000
04/05/2000CN1249848A Semiconductor and method relating to semiconductor
04/05/2000CN1249518A Non-volatile semiconductor memory device
04/05/2000CN1051164C Spacer flash cell process
04/04/2000US6046926 Ferroelectric memory and screening method therefor
04/04/2000US6046614 Drive circuit having a power recovery system
04/04/2000US6046542 Electron devices comprising a thin-film electron emitter
04/04/2000US6046493 Semiconductor device with special emitter connection
04/04/2000US6046491 Semiconductor resistor element having improved resistance tolerance and semiconductor device therefor
04/04/2000US6046484 Gate structure of semiconductor memory
04/04/2000US6046480 Protection circuit for semiconductor devices
04/04/2000US6046479 Electronic devices comprising thin-film transistors
04/04/2000US6046476 SOI input protection circuit
04/04/2000US6046475 Structure and method for manufacturing devices having inverse T-shaped well regions
04/04/2000US6046474 Field effect transistors having tapered gate electrodes for providing high breakdown voltage capability and methods of forming same
04/04/2000US6046473 Structure and process for reducing the on-resistance of MOS-gated power devices
04/04/2000US6046472 Graded LDD implant process for sub-half-micron MOS devices
04/04/2000US6046470 Trench-gated MOSFET with integral temperature detection diode
04/04/2000US6046469 Semiconductor storage device having a capacitor and a MOS transistor
04/04/2000US6046467 Semiconductor device having capacitor
04/04/2000US6046464 Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
04/04/2000US6046105 Preferential lateral silicidation of gate with low source and drain silicon consumption
04/04/2000US6046073 Process for producing very thin semiconductor chips
04/04/2000US6046067 Micromechanical device and method for its production
04/04/2000US6046064 Method for fabricating chemical semiconductor device
04/04/2000US6046059 Bombarding the oxide present between plug and electrode with ions and mixing the oxide with materials of the electrode and the plug to increase electroconductivity between the electrode and the plug
04/04/2000US6045625 Buried oxide with a thermal expansion matching layer for SOI
04/04/2000CA2164357C Article comprising organic thin film transistors
03/2000
03/30/2000WO2000017938A1 Semiconductor device
03/30/2000WO2000017937A2 Method for producing a semiconductor component
03/30/2000WO2000017936A1 Ferroelectric thin films of reduced tetragonality
03/30/2000WO2000017935A1 Semiconductor device
03/30/2000WO2000017934A1 Bipolar transistor and method for producing same
03/30/2000WO2000017933A1 Bipolar transistor and method for producing same
03/30/2000WO2000017931A1 Semiconductor element with field-forming areas
03/30/2000WO2000017930A1 High-speed imaging device
03/30/2000WO2000017919A2 Method for producing an ohmic contact
03/30/2000WO2000017914A2 Method for forming silicide regions on an integrated device
03/30/2000WO2000017913A2 Method for forming a silicide region on a silicon body
03/30/2000WO2000017882A1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
03/30/2000WO2000017423A2 Method for producing an amorphous or polycrystalline layer on an insulating region
03/30/2000WO2000017104A1 Method of making silicon clathrates
03/30/2000WO2000004575A3 Collimated sputtering of semiconductor and other films
03/30/2000WO2000001008A9 Ulsi mos with high dielectric constant gate insulator
03/30/2000DE19943785A1 Electronic cascade circuit, e.g. with a silicon MOSFET and a silicon carbide JFET, has a first component grid control voltage partially applied to a second component grid connection at a level below its p-n junction diffusion voltage
03/30/2000DE19939107A1 Silicon carbide component, especially a Schottky diode, is produced by forming an ohmic contact before high temperature growth of an epitaxial layer
03/30/2000DE19852968C1 Semiconductor component with a pressure sensor and a semiconductor chip for additional functions and with a position sensor for indirect measurement of deflecting pressure
03/30/2000DE19844010A1 Bottom gate-type thin film transistor, useful for active matrix applications, has a doped semiconductor layer for forming an ohmic junction between a channel region and source-drain contacts
03/30/2000DE19842883A1 Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung Electrically programmable, non-volatile memory cell arrangement
03/30/2000DE19842488A1 Halbleitervorrichtung und Halbleiterstruktur mit Kontaktierung Semiconductor device and semiconductor structure comprising contacting
03/30/2000DE19841754A1 Schalttransistor mit reduzierten Schaltverlusten Switching transistor with reduced switching losses
03/30/2000CA2343129A1 Ferroelectric thin films of reduced tetragonality
03/29/2000EP0989644A1 Quantum cascade light emitter with pre-biased internal electronic potential
03/29/2000EP0989614A2 TFT with an LDD structure and its manufacturing method
03/29/2000EP0989613A1 SOI transistor with body contact and method of forming same
03/29/2000EP0989602A1 Method of manufacturing a semiconductor device using lithography and etching of stacked layers
03/29/2000EP0989599A1 Process for fabricating vertical transistors
03/29/2000EP0988651A1 Lateral diffused mos transistor with trench source contact
03/29/2000EP0925178A4 Memory device using movement of protons
03/29/2000EP0902843B1 Method for making a thin film of solid material, and uses thereof
03/29/2000CN1249065A Process for producing semiconductor IC device
03/29/2000CN1248793A Design for enhancement avalanche mode insulator substrate silicon complementary MOS device
03/29/2000CN1248787A Method for making semiconductor device
03/29/2000CN1248757A Active array display device
03/29/2000CN1050939C Thin film semiconductor device for display and method of producing same
03/29/2000CN1050934C Method for making integrated circuit
03/28/2000US6043859 Active matrix base with reliable terminal connection for liquid crystal display device
03/28/2000US6043800 Head mounted liquid crystal display system
03/28/2000US6043564 Semiconductor device having ball-bonded pads
03/28/2000US6043561 Electronic material, its manufacturing method, dielectric capacitor, non-volatile memory and semiconductor device
03/28/2000US6043555 Bipolar silicon-on-insulator transistor with increased breakdown voltage
03/28/2000US6043554 Bipolar transistor and its manufacturing method
03/28/2000US6043553 Multi-emitter bipolar transistor of a self-align type
03/28/2000US6043552 Semiconductor device and method of manufacturing the semiconductor device
03/28/2000US6043550 Photodiode and photodiode module
03/28/2000US6043536 Semiconductor device
03/28/2000US6043535 Self-aligned implant under transistor gate
03/28/2000US6043534 High voltage semiconductor device
03/28/2000US6043532 DMOS transistor protected against "snap-back"
03/28/2000US6043531 Method for producing bridged, doped zones
03/28/2000US6043530 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
03/28/2000US6043526 Semiconductor memory cell using a ferroelectric thin film and a method for fabricating it
03/28/2000US6043523 Charge coupled device and method of fabricating the same
03/28/2000US6043520 Gallium arsenide (gaas) ballast resistor layer is provided in a heterojunction bipolar transistor having gaas emitter layer, indium galium phosphide spacer layer and gaas base layer, controls ballast resistance
03/28/2000US6043519 Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication
03/28/2000US6043518 Multiple-function GaAs transistors with very strong negative differential resistance phenomena
03/28/2000US6043516 Semiconductor component with scattering centers within a lateral resistor region
03/28/2000US6043513 Silicon carbide overcoated with aluminum titanium silicide (sic) layer, with ohmic contact comprising aluminum titanium silicide on the sic layer; ohmic contact has low specific contact resistance and is stable over wide temperature range
03/28/2000US6043512 Thin film semiconductor device and method for producing the same
03/28/2000US6043511 Thin film transistor array panel used for a liquid crystal display having patterned data line components
03/28/2000US6043510 Molecule-doped negative-resistance device and method for manufacturing the same
03/28/2000US6043508 Photodetector involving a MOSFET having a floating gate
03/28/2000US6043507 Thin film transistors and methods of making
03/28/2000US6043143 Ohmic contact and method of manufacture
03/28/2000US6043142 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
03/28/2000US6043139 Process for controlling dopant diffusion in a semiconductor layer
03/28/2000US6043138 Multi-step polysilicon deposition process for boron penetration inhibition
03/28/2000US6043130 Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
03/28/2000US6043126 Process for manufacture of MOS gated device with self aligned cells
03/28/2000US6043125 Method of fabricating vertical power MOSFET having low distributed resistance
03/28/2000US6043122 Three-dimensional non-volatile memory
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