| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/13/2000 | DE19942885A1 Semiconductor device has an electrode or wiring layer of a thick aluminum layer below a nickel layer to prevent an aluminum-nickel intermetallic compound from reaching the underlying substrate |
| 04/13/2000 | DE19845658A1 Solarzelle mit Bypassdiode Solar cell with bypass diode |
| 04/13/2000 | DE19845537A1 Sensor und Verfahren zu seiner Herstellung Sensor and method for its preparation |
| 04/12/2000 | EP0993049A1 Vertical field-effect transistor having an annular trench gate and method of making the same |
| 04/12/2000 | EP0993048A2 Nitride semiconductor device and its manufacturing method |
| 04/12/2000 | EP0993047A1 Semiconductor device with elements of integrated circuits of III-V group and means to prevent the pollution by hydrogen |
| 04/12/2000 | EP0993038A1 TFT matrix panel |
| 04/12/2000 | EP0993036A1 Method of manufacturing an integrated semiconductor device comprising a floating gate field-effect transistor and a logic-field effect transistor, and corresponding device |
| 04/12/2000 | EP0993033A1 Gate insulating structure for power devices, and related manufacturing process |
| 04/12/2000 | EP0993032A2 Apparatus having integrated circuits made of TFT devices, and methods of manufacture thereof |
| 04/12/2000 | EP0992778A2 Sensor and fabrication method thereof |
| 04/12/2000 | EP0992070A1 Semiconductor component and method for producing the same |
| 04/12/2000 | EP0992069A1 Semiconductor current limiter |
| 04/12/2000 | EP0992067A1 Power converter and the use thereof |
| 04/12/2000 | EP0992063A1 A titanium nitride diffusion barrier for use in non-silicon technologies and metallization method |
| 04/12/2000 | EP0991975A1 Wire electrode structure and liquid crystal display employing the structure |
| 04/12/2000 | EP0738396B1 A device for measuring force components in monocristalline material, a method for manufacturing such a device and a use of such a device |
| 04/12/2000 | CN1250223A Semi-conductor chip with mesa structure finished by sawing method |
| 04/12/2000 | CN1051403C Capacitor having a metal-oxide dielectric |
| 04/11/2000 | US6049494 Semiconductor memory device |
| 04/11/2000 | US6049482 Non-volatile semiconductor memory device |
| 04/11/2000 | US6049477 Ferroelectric memory device in which the channel region has the same conductivity type as the diffusion region |
| 04/11/2000 | US6049465 Signal carrying means including a carrier substrate and wire bonds for carrying signals between the cache and logic circuitry of a microprocessor |
| 04/11/2000 | US6049200 Voltage regulator capable of lowering voltage applied across phase compensating capacitor |
| 04/11/2000 | US6049133 Semiconductor fabrication employing concurrent diffusion barrier and salicide formation |
| 04/11/2000 | US6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness |
| 04/11/2000 | US6049124 Semiconductor package |
| 04/11/2000 | US6049119 Protection circuit for a semiconductor device |
| 04/11/2000 | US6049115 Scanning probe microscope, and semiconductor distortion sensor for use therein |
| 04/11/2000 | US6049114 Semiconductor device having a metal containing layer overlying a gate dielectric |
| 04/11/2000 | US6049110 Body driven SOI-MOS field effect transistor |
| 04/11/2000 | US6049109 Silicon on Insulator semiconductor device with increased withstand voltage |
| 04/11/2000 | US6049108 Trench-gated MOSFET with bidirectional voltage clamping |
| 04/11/2000 | US6049107 Sub-quarter-micron MOSFET and method of its manufacturing |
| 04/11/2000 | US6049106 Large grain single crystal vertical thin film polysilicon MOSFETs |
| 04/11/2000 | US6049104 MOSFET device to reduce gate-width without increasing JFET resistance |
| 04/11/2000 | US6049099 Cadmium sulfide layers for indium phosphide-based heterojunction bipolar transistors |
| 04/11/2000 | US6049098 Bipolar transistor having an emitter region formed of silicon carbide |
| 04/11/2000 | US6049097 Reliable HEMT with small parasitic resistance |
| 04/11/2000 | US6049096 Protection component for telephone line interface |
| 04/11/2000 | US6049095 Semiconductor device |
| 04/11/2000 | US6049092 Semiconductor device and method for manufacturing the same |
| 04/11/2000 | US6049091 High electron mobility transistor |
| 04/11/2000 | US6048795 Process of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layer |
| 04/11/2000 | US6048791 Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method |
| 04/11/2000 | US6048784 Transistor having an improved salicided gate and method of construction |
| 04/11/2000 | US6048783 Method of forming an electrode on a substrate of a semiconductor device |
| 04/11/2000 | US6048780 Semiconductor device and manufacturing method for the same |
| 04/11/2000 | US6048778 Gettering regions and methods of forming gettering regions within a semiconductor wafer |
| 04/11/2000 | US6048776 Semiconductor device and a method of fabricating the same |
| 04/11/2000 | US6048773 Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby |
| 04/11/2000 | US6048772 Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection |
| 04/11/2000 | US6048770 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 04/11/2000 | US6048766 Flash memory device having high permittivity stacked dielectric and fabrication thereof |
| 04/11/2000 | US6048760 Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions |
| 04/11/2000 | US6048759 Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown |
| 04/11/2000 | US6048756 Method for making a silicon-on-insulator MOS transistor using a selective SiGe epitaxy |
| 04/11/2000 | US6048740 Lithography for fabrication of ferroelectric memory transistors, dopes of boron |
| 04/11/2000 | US6048738 Method of making ferroelectric memory cell for VLSI RAM array |
| 04/11/2000 | US6048737 Forming conductive oxide layer between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current |
| 04/11/2000 | US6048690 Methods for electronic fluorescent perturbation for analysis and electronic perturbation catalysis for synthesis |
| 04/11/2000 | US6047604 Pressure sensor component for mounting on the component-mounting surface of a printed circuit board |
| 04/06/2000 | WO2000019550A1 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers |
| 04/06/2000 | WO2000019541A1 Electrostatic induction transistor |
| 04/06/2000 | WO2000019540A1 Bi-directional semiconductor switch, and switch circuit for battery-powered equipment |
| 04/06/2000 | WO2000019536A1 Electronic switching device with at least two semiconductor components |
| 04/06/2000 | WO2000019535A1 Semiconductor structure for semiconductor components |
| 04/06/2000 | WO2000019529A1 Integrated circuit comprising vertical transistors, and a method for the production thereof |
| 04/06/2000 | WO2000019516A1 Semiconductor device, connection method for semiconductor chip, circuit board and electronic apparatus |
| 04/06/2000 | WO2000019512A1 Pseudomorphic high electron mobility transistors |
| 04/06/2000 | WO2000019511A1 Deposition of oxide layer on the gate |
| 04/06/2000 | WO2000019510A2 Elevated channel mosfet |
| 04/06/2000 | WO2000019509A2 Method of manufacturing a semiconductor device with a field effect transistor |
| 04/06/2000 | WO2000019508A1 Silicon carbide deposition method and use as a barrier layer and passivation layer |
| 04/06/2000 | WO2000019503A1 Method for producing transistors |
| 04/06/2000 | WO2000019498A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications |
| 04/06/2000 | DE19946999A1 Ferroelectric memory device manufacture includes forming titanium and platinum layers on an insulation layer covered substrate and thermally treating under an oxygen atmosphere |
| 04/06/2000 | DE19844531A1 Verfahren zur Herstellung von Transistoren A process for the production of transistors |
| 04/06/2000 | DE19843959A1 Verfahren zum Herstellen eines Halbleiterbauelements A method of manufacturing a semiconductor device |
| 04/06/2000 | DE19843893A1 Power semiconductor diode used as a free-wheeling diode has a first layer doped for a first conductivity, a second layer at most weakly doped for a second conductivity, and a third layer doped for an opposite second conductivity |
| 04/06/2000 | DE19843659A1 Halbleiterbauelement mit strukturiertem Halbleiterkörper A semiconductor device with a structured semiconductor body |
| 04/06/2000 | DE19843537A1 Semiconductor component with four-layer structure for overvoltage protection has first conductivity base zone and second conductivity region on underside |
| 04/06/2000 | DE19842475A1 Halbleiterstruktur mit Kontaktierung Semiconductor structure with contacting |
| 04/06/2000 | CA2345150A1 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers |
| 04/06/2000 | CA2311967A1 Method of manufacturing a semiconductor device with a field effect transistor |
| 04/05/2000 | EP0991118A1 Method for realizing a multilevel ROM memory in a dual gate CMOS process and corresponding ROM memory cell |
| 04/05/2000 | EP0991114A2 Ultra-low sheet resistance metal/poly-SI gate for deep sub-micron CMOS application |
| 04/05/2000 | EP0991113A2 A process for fabricating a self-aligned T-shaped gate electrode with reduced resistivity |
| 04/05/2000 | EP0991080A2 Non-volatile semiconductor memory device |
| 04/05/2000 | EP0991078A2 Quantum random address memory with magnetic readout and/or nano-memory elements |
| 04/05/2000 | EP0991076A2 Quantum random address memory |
| 04/05/2000 | EP0990872A1 Angular velocity sensor |
| 04/05/2000 | EP0990268A1 Latch-up free power mos-bipolar transistor |
| 04/05/2000 | EP0990266A1 Hyperfrequency transistor with quasi-aligned structure and method for making same |
| 04/05/2000 | EP0990263A2 A substrate for high frequency integrated circuits |
| 04/05/2000 | EP0990159A1 Suspension arrangement for semiconductor accelerometer |
| 04/05/2000 | EP0946988A4 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements |
| 04/05/2000 | CN1249852A Subscriber interface protection circuit |
| 04/05/2000 | CN1249850A Method for mfg. semiconductor integrated circuit device |
| 04/05/2000 | CN1249849A Strontium bismuth niobate tantalate ferroelectric thin film |