| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/25/2000 | US6054748 High voltage semiconductor power device |
| 04/25/2000 | US6054743 High voltage MOS transistor |
| 04/25/2000 | US6054740 Protection against overvoltages of an integrated MOS power transistor |
| 04/25/2000 | US6054739 Semiconductor device having channel refractive index in first and second directions |
| 04/25/2000 | US6054737 High density MOS technology power device |
| 04/25/2000 | US6054736 Semiconductor device |
| 04/25/2000 | US6054734 Non-volatile memory cell having dual gate electrodes |
| 04/25/2000 | US6054732 Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size |
| 04/25/2000 | US6054731 Floating gate non-volatile memory cell with low erasing voltage and manufacturing method |
| 04/25/2000 | US6054729 Gallium antimonide complementary HFET |
| 04/25/2000 | US6054728 Insulated gate thyristor |
| 04/25/2000 | US6054727 Power semiconductor component |
| 04/25/2000 | US6054722 Complementary field effect devices for eliminating or reducing diode effect |
| 04/25/2000 | US6054719 An electronic component with a semiconductor composite structure in which a doped semiconductor layer is in proximity to an undoped diamond layer |
| 04/25/2000 | US6054386 Process for forming silicon-on-insulator devices using a nitriding agent |
| 04/25/2000 | US6054369 Lifetime control for semiconductor devices |
| 04/25/2000 | US6054366 Two-layered gate structure for a semiconductor device and method for producing the same |
| 04/25/2000 | US6054358 Semiconductor device and manufacturing method of the same |
| 04/25/2000 | US6054357 Semiconductor device and method for fabricating the same |
| 04/25/2000 | US6054356 Transistor and process of making a transistor having an improved LDD masking material |
| 04/25/2000 | US6054355 Method of manufacturing a semiconductor device which includes forming a dummy gate |
| 04/25/2000 | US6054352 Method of manufacturing a silicon carbide vertical MOSFET |
| 04/25/2000 | US6054351 Method of evaluating a tunnel insulating film |
| 04/25/2000 | US6054350 EPROM cell having a gate structure with sidewall spacers of differential composition |
| 04/25/2000 | US6054341 Method of manufacturing charge-coupled device having different light-receiving region and charge-isolating layer structures |
| 04/20/2000 | WO2000022679A1 Field-effect semiconductor device |
| 04/20/2000 | WO2000022678A1 Elementary microelectronic component combining bipolar effect with mos effect, method for making same |
| 04/20/2000 | WO2000022664A1 Post deposition treatment of dielectric films for interface control |
| 04/20/2000 | WO2000022397A1 Capacitive pressure sensor |
| 04/20/2000 | WO2000022202A1 p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
| 04/20/2000 | WO2000004597A3 Asymmetrically blocking power semiconductor component |
| 04/20/2000 | WO2000004596A3 Power semiconductor component for high blocking voltages |
| 04/20/2000 | DE19848131A1 Device, especially gas sensor or solar cell, is operated by ambient medium change for rectification property alteration of two contacting different conductivity materials |
| 04/20/2000 | DE19847368A1 Window etching through indium-gallium phosphide layer, especially emitter region of heterojunction bipolar transistor, e.g. for a high power microwave amplifier, involves using a silicon nitride mask |
| 04/20/2000 | DE19846211A1 Non-volatile EPROM memory cell with separate program and read areas |
| 04/20/2000 | DE19846063A1 Verfahren zur Herstellung eines Double-Gate MOSFETs A method for producing a double-gate MOSFETs |
| 04/19/2000 | EP0994565A2 Temperature sensing in voltage drive type semiconductor device |
| 04/19/2000 | EP0994514A1 Method of manufacturing a semiconductor device by joining two substrates |
| 04/19/2000 | EP0994511A1 Semiconductor device and manufacturing method of the same |
| 04/19/2000 | EP0994330A1 Method for manufacturing an angular rate sensor |
| 04/19/2000 | EP0993688A1 Power devices in wide bandgap semiconductor |
| 04/19/2000 | EP0775367A4 Semiconductor device with integrated rc network and schottky diode |
| 04/19/2000 | CN1251207A Method for producing vertical MOS-transistor |
| 04/19/2000 | CN1250948A Method for making integrated semiconductor device with nonvolatile floating grid memory and the device |
| 04/19/2000 | CN1250871A Method for making angular rate sensor |
| 04/19/2000 | CN1051645C Structure and mfg. method for chip of semiconductor diode and their main insulating casing |
| 04/19/2000 | CN1051643C 功率集成电路 Power IC |
| 04/19/2000 | CN1051640C Semiconductor device and method for fabricating same |
| 04/18/2000 | US6052313 Semiconductor integrated circuit device |
| 04/18/2000 | US6052311 Electrically erasable programmable read only flash memory |
| 04/18/2000 | US6052168 Active matrix liquid-crystal display with verticle alignment, positive anisotropy and opposing electrodes below pixel electrode |
| 04/18/2000 | US6052163 Thin film transistor and liquid crystal display device |
| 04/18/2000 | US6052162 Transmission type liquid crystal display device with connecting electrode and pixel electrode connected via contact hole through interlayer insulating film and method for fabricating |
| 04/18/2000 | US6052104 Structure and operation method of LCD |
| 04/18/2000 | US6052017 Method and circuit for enabling rapid flux reversal in the coil of a write head associated with a computer disk drive, or the like |
| 04/18/2000 | US6051889 Semiconductor device having a flip-chip structure |
| 04/18/2000 | US6051883 Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode |
| 04/18/2000 | US6051874 Diode formed in a surface silicon layer on an SOI substrate |
| 04/18/2000 | US6051873 Semiconductor device including self-aligned base and emitter electrodes |
| 04/18/2000 | US6051872 Semiconductor integration device and fabrication method of the same |
| 04/18/2000 | US6051871 Heterojunction bipolar transistor having improved heat dissipation |
| 04/18/2000 | US6051866 Microstructures and single mask, single-crystal process for fabrication thereof |
| 04/18/2000 | US6051865 Transistor having a barrier layer below a high permittivity gate dielectric |
| 04/18/2000 | US6051862 MOS-technology power device integrated structure |
| 04/18/2000 | US6051861 Semiconductor device with reduced fringe capacitance and short channel effect |
| 04/18/2000 | US6051860 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit |
| 04/18/2000 | US6051858 Ferroelectric/high dielectric constant integrated circuit and method of fabricating same |
| 04/18/2000 | US6051856 Voltage-controlled resistor utilizing bootstrap gate FET |
| 04/18/2000 | US6051855 Electrostatic capacitive sensor |
| 04/18/2000 | US6051850 Insulated gate bipolar junction transistors having built-in freewheeling diodes therein |
| 04/18/2000 | US6051509 Semiconductor integrated circuit manufacturing method and device |
| 04/18/2000 | US6051506 Method of fabrication ultra-frequency semiconductor device |
| 04/18/2000 | US6051494 Semiconductor device having metal silicide film |
| 04/18/2000 | US6051488 Methods of forming semiconductor switching devices having trench-gate electrodes |
| 04/18/2000 | US6051487 Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode |
| 04/18/2000 | US6051486 Method and structure for replaceable gate electrode in insulated gate field effect transistors |
| 04/18/2000 | US6051485 Photomask the silicon oxide layer, etching the silicon oxide layer, applying a platinum-metal layer to the mask and the exposed substrate surface area, etching to remove the silicon oxide layer and platinum metal on the mask surface area |
| 04/18/2000 | US6051484 Semiconductor device and method of manufacturing thereof |
| 04/18/2000 | US6051483 Formation of ultra-shallow semiconductor junction using microwave annealing |
| 04/18/2000 | US6051482 Method for manufacturing buried-channel PMOS |
| 04/18/2000 | US6051473 Fabrication of raised source-drain transistor devices |
| 04/18/2000 | US6051472 Semiconductor device and method of producing the same |
| 04/18/2000 | US6051470 Dual-gate MOSFET with channel potential engineering |
| 04/18/2000 | US6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance |
| 04/18/2000 | US6051467 Method to fabricate a large planar area ONO interpoly dielectric in flash device |
| 04/18/2000 | US6051460 Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon |
| 04/18/2000 | US6051457 Method for fabricating electrostatic discharge protection device |
| 04/18/2000 | US6051456 Semiconductor component and method of manufacture |
| 04/18/2000 | US6051453 Forming a non-single crystal semiconductor film comprising silicon and hydrogen on an insulating surface, ejecting hydrogen from non-single crystal semiconductor film, crystallizing the semiconductor film by irradiating a light |
| 04/18/2000 | US6051452 Method for manufacturing a semiconductor device with ion implantation |
| 04/18/2000 | US6051380 Hybridizing dna in an electrophoresis system using a low conductivity, zwitterionic buffer; transporting dna toward a microlocation where ph of buffer is below the isoelectric point, enhancing hybridization of dna to probe |
| 04/18/2000 | US6050827 Method of manufacturing a thin-film transistor with reinforced drain and source electrodes |
| 04/13/2000 | WO2000021140A1 Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit |
| 04/13/2000 | WO2000021138A1 Solar cell comprising a bypass diode |
| 04/13/2000 | WO2000021137A1 Insulated channel field effect transistor with an electric field terminal region |
| 04/13/2000 | WO2000021125A1 Self aligned symmetric intrinsic process and device |
| 04/13/2000 | WO2000021118A2 Method for producing a double gate of a vertical mosfet |
| 04/13/2000 | WO2000021092A1 Semiconductor device |
| 04/13/2000 | WO2000020916A2 Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
| 04/13/2000 | WO2000020900A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method |