Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2000
05/03/2000EP0996985A1 II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION
05/03/2000EP0996982A1 Method for making a vertical mos transistor
05/03/2000EP0996981A1 High-voltage edge termination for planar structures
05/03/2000EP0996977A1 Electrical bonding of a semiconductor junction
05/03/2000EP0996975A1 Self-aligned power field effect transistor in silicon carbide
05/03/2000EP0996973A1 Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
05/03/2000EP0996972A1 Method for targeted production on n-type conductive areas in diamond layers by ion implantation
05/03/2000EP0996971A2 Method of manufacturing a semiconductor device
05/03/2000EP0996970A2 Manufacture of field-effect semiconductor devices
05/03/2000EP0996969A2 Manufacture of trench-gate semiconductor devices
05/03/2000CN2376678Y 400A rotary silicon rectifier
05/03/2000CN2376677Y 200 A rotary silicon rectifier
05/03/2000CN1252168A Bipolar transistor structure
05/03/2000CN1252167A Semiconductor quantum oscillator
05/03/2000CN1252156A Electrically erasable nonvolatile memory
05/03/2000CN1252155A Nonvolatile memory
05/03/2000CN1251944A Operatable grating contact of SOI
05/03/2000CN1251914A Film transistor array substrate for liquid crystal display and manufacture thereof
05/03/2000CN1052116C Manufacture of thin film semiconductor device
05/03/2000CN1052115C Semiconductor device
05/03/2000CN1052111C Manufacure of capacitor of semiconductor device
05/03/2000CN1052110C Manufacture of semiconductor device
05/02/2000US6058046 Nonvolatile semiconductor memory cell capable of saving overwritten cell and its saving method
05/02/2000US6058045 Serial flash memory
05/02/2000US6058044 Shielded bit line sensing scheme for nonvolatile semiconductor memory
05/02/2000US6058043 Method of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications
05/02/2000US6057897 Active matrix display in which adjacent transistors share a common source region
05/02/2000US6057896 Liquid crystal displays using organic insulating material for a passivation layer and/or a gate insulating layer and manufacturing methods thereof
05/02/2000US6057604 Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure
05/02/2000US6057591 Process for forming an edge structure to seal integrated electronic devices, and corresponding device
05/02/2000US6057584 Semiconductor device having a tri-layer gate insulating dielectric
05/02/2000US6057583 Transistor with low resistance metal source and drain vertically displaced from the channel
05/02/2000US6057582 Semiconductor device with gate electrode having end portions to reduce hot carrier effects
05/02/2000US6057580 Semiconductor memory device having shallow trench isolation structure
05/02/2000US6057577 Component of protection of an integrated MOS power transistor against voltage gradients
05/02/2000US6057576 Inverse-T tungsten gate apparatus
05/02/2000US6057575 Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
05/02/2000US6057574 Contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators
05/02/2000US6057572 Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same
05/02/2000US6057567 Integrated circuit and method
05/02/2000US6057566 Semiconductor device
05/02/2000US6057564 Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode
05/02/2000US6057558 Silicon carbide semiconductor device and manufacturing method thereof
05/02/2000US6057556 Tunneling device and method of producing a tunneling device
05/02/2000US6057555 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
05/02/2000US6057243 Method for producing semiconductor device
05/02/2000US6057229 Method for metallizing submicron contact holes in semiconductor bodies
05/02/2000US6057220 Titanium polycide stabilization with a porous barrier
05/02/2000US6057217 Process for production of semiconductor device with foreign element introduced into silicon dioxide film
05/02/2000US6057216 Low temperature diffusion process for dopant concentration enhancement
05/02/2000US6057215 Process for forming a refractory metal silicide film having a uniform thickness
05/02/2000US6057204 Method of making a noise-isolated buried resistor by implanting a first well with a mask and then implanting an opposite conductivity well with a larger opening in the mask
05/02/2000US6057203 Integrated circuit capacitor
05/02/2000US6057201 Method of producing a transistor structure
05/02/2000US6057200 Method of making a field effect transistor having an elevated source and an elevated drain
05/02/2000US6057199 Method of producing a semiconductor body
05/02/2000US6057197 Isolation scheme to prevent field oxide edge from oxide loss
05/02/2000US6057194 Method of forming trench transistor in combination with trench array
05/02/2000US6057193 Elimination of poly cap for easy poly1 contact for NAND product
05/02/2000US6057188 Trench capacitor structures
05/02/2000US6057181 Thin film transistor and method for fabricating same
05/02/2000US6056888 Electronic component and method of manufacture
05/02/2000US6056783 Method for designing cell array layout of non-volatile memory device
05/02/2000US6056614 Method of manufacturing pixel electrode for reflection type display device
05/02/2000US6055865 Semiconductor pressure sensor
05/02/2000US6055858 Acceleration sensor
04/2000
04/27/2000WO2000024061A1 Semiconductor power component, operational method and use thereof as a switch
04/27/2000WO2000024060A2 Semiconductor switches with evenly distributed fine control structures
04/27/2000WO2000024049A1 Method of oxidizing a substrate in the presence of nitride and oxynitride films
04/27/2000WO2000024040A2 Conductive isostructural compounds
04/27/2000WO2000023777A1 Circuit configuration for compensating the temperature non-linearity of the characteristic curves of the piezoresistive measuring resistors connected in a bridge circuit
04/27/2000WO2000005766A3 Silicon-on-insulator (soi) hybrid transistor device structure
04/27/2000WO1999065070A3 Method of manufacturing a semiconductor device comprising a mos transistor
04/27/2000DE19949364A1 Semiconductor component with MOS gate control used for battery powered, portable electronic components, e.g. laptop computers
04/27/2000DE19848362A1 Temperature nonlinearity compensating circuit for piezoresistive bridge circuit; has resistors with know linear and nonlinear temperature co-efficients connected in bridge form, to compensate for nonlinear temperature characteristics
04/26/2000EP0996176A1 Method of fabricating and structure of an active matrix light-emitting display device
04/26/2000EP0996168A2 Field-effect transistor having a multiple quantum barrier structure
04/26/2000EP0996167A2 Bipolar transistor and field-effect transistor having a multiple quantum barrier structure
04/26/2000EP0996166A2 Semiconductor devices having a multiple quantum barrier structure
04/26/2000EP0996165A1 Power device with interconnections
04/26/2000EP0996157A1 Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
04/26/2000EP0996152A1 Process for manufacturing electronic devices comprising non-salicidated nonvolatile memory cells, non-salicidated HV transistors, and salicidated-junction LV transistors
04/26/2000EP0996151A2 Method for fabricating transistors
04/26/2000EP0996148A1 Method for fabricating semiconductor devices comprising a heat treatment step
04/26/2000EP0995094A1 Method of manufacturing a semiconductor component
04/26/2000EP0834212B1 Converter circuit, circuitry having at least one switching device and circuit module
04/26/2000EP0783670B1 Electromechanical transducer
04/26/2000CN2376081Y Film glued induction card
04/26/2000CN1251470A Method for producing transistor
04/26/2000CN1051882C Insulation-grid film transistor
04/26/2000CN1051878C Semiconductor device and its mfg. method, and mfg. method for transparent film
04/26/2000CN1051877C Semiconductor device and method for producing same
04/25/2000US6055254 Quantum cascade light emitter with pre-biased internal electronic potential
04/25/2000US6055185 Single-poly EPROM cell with CMOS compatible programming voltages
04/25/2000US6055181 Nonvolatile semiconductor memory device capable of storing multi-value data of more than one bit in a memory cell
04/25/2000US6055175 Nonvolatile ferroelectric memory
04/25/2000US6055034 Liquid crystal display panel
04/25/2000US6054770 Electric solid state device and method for manufacturing the device
04/25/2000US6054760 Surface-connectable semiconductor bridge elements and devices including the same
04/25/2000US6054752 Semiconductor device
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