Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2000
05/16/2000US6063675 Method of forming a MOSFET using a disposable gate with a sidewall dielectric
05/16/2000US6063673 Transistor device structures, and methods for forming such structures
05/16/2000US6063671 Method of forming a high-voltage device
05/16/2000US6063667 Method for reducing the capacitance across the layer of tunnel oxide of an electrically-erasable programmable read-only-memory cell
05/16/2000US6063666 RTCVD oxide and N2 O anneal for top oxide of ONO film
05/16/2000US6063664 Method of making EEPROM with trenched structure
05/16/2000US6063663 Method for manufacturing a native MOS P-channel transistor with a process for manufacturing non-volatile memories
05/16/2000US6063659 Method of forming a high-precision linear MOS capacitor using conventional MOS device processing steps
05/16/2000US6063655 Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication
05/16/2000US6063654 Fabricating a semiconductor device which allows the defects at the crystal boundary of silicon film crystallized from amorphous silicon film to be passivated without using the hydrogen plasma treatment
05/16/2000US6062089 Semiconductor pressure sensor having a flange surface configured to fit into a stepped hole of a housing body
05/16/2000US6062088 Pressure sensor
05/16/2000CA2201737C Heterojunction energy gradient structure
05/11/2000WO2000026970A1 Mos capacitor, liquid crystal display, integrated circuit and method of manufacture thereof
05/11/2000WO2000026969A1 Ferroelectric transistor and method for the production thereof
05/11/2000WO2000026968A1 Semiconductor component with a high breakdown voltage
05/11/2000WO2000026962A1 Method for semiconductor manufacturing
05/11/2000WO2000026955A1 Fabrication of a transistor having an ultra-thin gate dielectric
05/11/2000WO2000025625A2 Method and apparatus for insertion and retainment of pomade within a dispenser
05/11/2000WO2000019535B1 Semiconductor structure for semiconductor components
05/11/2000DE19953620A1 Low voltage MOS gate controlled semiconductor component, useful for a direct voltage/direct voltage converter, employs planar strip technology and has a minimal power index
05/11/2000DE19850852A1 Ferroelektrischer Transistor und Verfahren zu dessen Herstellung Ferroelectric transistor and method of producing the
05/11/2000DE19849902A1 Halbleiterbauelement Semiconductor device
05/11/2000CA2349559A1 Method for semiconductor manufacturing
05/10/2000EP0999597A1 Ferroelectric nonvolatile transistor and method of making same
05/10/2000EP0999595A2 Semiconductor device and manufacturing method therefor
05/10/2000EP0999594A1 Integrated circuit having MOS field-effect transistors comprising regions doped with nitrogen and method of making the same
05/10/2000EP0998759A1 Microelectronic components and electronic networks comprising dna
05/10/2000EP0998754A1 Method for producing a semiconductor component controlled by field effect
05/10/2000EP0998592A2 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
05/10/2000EP0953214A4 Semiconductor having large volume fraction of intermediate range order material
05/10/2000EP0948808A4 Integrated circuits and methods for their fabrication
05/10/2000EP0941460B1 Process for producing micromechanical sensors
05/10/2000CN1252893A Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device
05/10/2000CN1252624A Pot channel type capacitor with epitaxial hidden layer
05/10/2000CN1252622A Flash memory unit with grid to induce drain current
05/10/2000CN1052344C 半导体元件 Semiconductor device
05/10/2000CN1052343C Semiconductor device and method for producing same
05/10/2000CN1052342C 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/09/2000US6061269 P-channel memory cell and method for forming the same
05/09/2000US6061112 Method of fabricating a reflection type liquid crystal display in which the surface of a substrate is roughened, a metal film is formed on the roughened surface, and a non-polarizing, transparent dielectric film is form on the metal film
05/09/2000US6060911 Circuit arrangement with at least four transistors, and method for the manufacture thereof
05/09/2000US6060776 Rectifier diode
05/09/2000US6060767 Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof
05/09/2000US6060765 Semiconductor device and a method of manufacturing the same
05/09/2000US6060761 Lateral type transistor
05/09/2000US6060757 High frequency RF diode with low parasitic capacitance
05/09/2000US6060755 Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
05/09/2000US6060751 Semiconductor device having element isolation
05/09/2000US6060750 Semiconductor device having SOI-MOSFET
05/09/2000US6060749 Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin SOI substrate
05/09/2000US6060747 Semiconductor device
05/09/2000US6060746 Power transistor having vertical FETs and method for making same
05/09/2000US6060745 Semiconductor device having a monotonically decreasing impurity concentration
05/09/2000US6060744 Semiconductor device with a main current cell region and a current detecting cell region
05/09/2000US6060743 Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
05/09/2000US6060742 ETOX cell having bipolar electron injection for substrate-hot-electron program
05/09/2000US6060741 Stacked gate structure for flash memory application
05/09/2000US6060740 Non-volatile semiconductor memory device and method for manufacturing the same
05/09/2000US6060739 Non-volatile semiconductor memory device having a floating gate inside a grove
05/09/2000US6060738 Semiconductor device having SOI structure
05/09/2000US6060736 Semiconductor device and method of manufacturing the same
05/09/2000US6060734 MESfield effect transistor
05/09/2000US6060731 Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region
05/09/2000US6060726 CMOS transistor with two channel regions and common gate
05/09/2000US6060725 Thin film transistor using a semiconductor film
05/09/2000US6060724 Quantum wire logic gate
05/09/2000US6060723 Controllable conduction device
05/09/2000US6060406 MOS transistors with improved gate dielectrics
05/09/2000US6060403 Method of manufacturing semiconductor device
05/09/2000US6060375 Process for forming re-entrant geometry for gate electrode of integrated circuit structure
05/09/2000US6060365 Method for fabricating a bipolar transistor
05/09/2000US6060364 Fast Mosfet with low-doped source/drain
05/09/2000US6060362 Methods of fabricating field effect transistors including side branch grooves
05/09/2000US6060361 The tungsten silicon nitride layer formed by the plasma treatment has an amorphous internal structure, and an additional paths for diffusion are created inside tungsten silicon nitride layer for dopes inside polysilcon layer
05/09/2000US6060360 Method of manufacture of P-channel EEprom and flash EEprom devices
05/09/2000US6060359 Flash memory cell and method of fabricated the same
05/09/2000US6060331 Method for making heterostructure thermionic coolers
05/09/2000US6058781 Pressure sensor structure
05/04/2000WO2000025366A1 Improvements in impatt diodes
05/04/2000WO2000025365A2 Power semiconductor devices having improved high frequency switching and breakdown characteristics
05/04/2000WO2000025364A2 Bipolar high-volt power component
05/04/2000WO2000025363A1 Power component bearing interconnections
05/04/2000WO2000025362A1 Power semiconductor and a corresponding production method
05/04/2000WO2000025356A1 Method for producing a power semiconductor device with a stop zone
05/04/2000WO1999066540A9 An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
05/04/2000WO1999060165A9 Chemically assembled nano-scale devices
05/04/2000DE19934031A1 Ohmic contact, especially for p-type gallium nitride, e.g. in LEDs, laser diodes, photodetectors and microelectronic components, is produced by metal thermal oxidation to form a p-type semiconductor oxide
05/04/2000DE19857673C1 Bidirectionally blocking type power semiconductor element
05/04/2000DE19848828A1 Semiconductor device, especially a power MOSFET, Schottky diode or JFET, has a semi-insulating layer parallel to a drift region between two spaced electrodes
05/04/2000DE19848596A1 Halbleiterschalter mit gleichmäßig verteilten feinen Steuerstrukturen Semiconductor switches with uniformly distributed fine control structures
05/03/2000EP0997951A1 Field-effect transistor
05/03/2000EP0997950A2 Method of improving the crystallization of semiconductor films particularly for thin film transistors
05/03/2000EP0997946A1 Deep divot in shallow trench isolation for a buried-channel PFET
05/03/2000EP0997940A1 Process for electrically connecting IGBTs mounted on an IC
05/03/2000EP0997936A1 Manufacturing method for an IGBT gate electrode
05/03/2000EP0997930A1 Integration method for sidewall split gate flash transistor
05/03/2000EP0997769A2 Active matrix liquid crystal display device
05/03/2000EP0997737A1 Semiconductor acceleration sensor and self-diagnosis thereof
05/03/2000EP0997432A1 A method for forming an ultra microparticle-structure
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