Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2000
05/23/2000US6067251 Non-volatile semiconductor memory device
05/23/2000US6067249 Layout of flash memory and formation method of the same
05/23/2000US6067248 Nonvolatile semiconductor memory with single-bit and multi-bit modes of operation and method for performing programming and reading operations therein
05/23/2000US6067245 High speed, high bandwidth, high density nonvolatile memory system
05/23/2000US6066891 Electrode for semiconductor device including an alloy wiring layer for reducing defects in an aluminum layer and method for manufacturing the same
05/23/2000US6066882 Semiconductor pressure detecting device
05/23/2000US6066880 Semiconductor device
05/23/2000US6066878 High voltage semiconductor structure
05/23/2000US6066877 Vertical power MOSFET having thick metal layer to reduce distributed resistance
05/23/2000US6066876 Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout
05/23/2000US6066875 Method of fabricating split-gate source side injection flash EEPROM array
05/23/2000US6066874 Flash memory cell with vertical channels, and source/drain bus lines
05/23/2000US6066872 Semiconductor device and its fabricating method
05/23/2000US6066868 Ferroelectric based memory devices utilizing hydrogen barriers and getters
05/23/2000US6066867 Current control functional device
05/23/2000US6066865 Single layer integrated metal enhancement mode field-effect transistor apparatus
05/23/2000US6066864 Thyristor with integrated dU/dt protection
05/23/2000US6066863 Lateral semiconductor arrangement for power IGS
05/23/2000US6066860 Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
05/23/2000US6066859 Opto-electronic component with MQW structures
05/23/2000US6066555 Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning
05/23/2000US6066547 Single step heating to dope nickel ions in amorphous silicon, to form polycrystalline film
05/23/2000US6066542 Method for the manufacture of a power semiconductor component
05/23/2000US6066535 Method of manufacturing semiconductor device
05/23/2000US6066534 Method of manufacturing a field effect transistor
05/23/2000US6066532 Method of fabricating embedded gate electrodes
05/23/2000US6066531 Method for manufacturing semiconductor memory device
05/23/2000US6066521 Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor
05/23/2000US6066519 Semiconductor device having an outgassed oxide layer and fabrication thereof
05/23/2000US6066518 Method of manufacturing semiconductor devices using a crystallization promoting material
05/23/2000US6066517 Method for forming a thin film transistor
05/23/2000US6066508 Treating a semiconductor integrated circuit wafer, as housed in a reaction furnace, in a hydrogen gas, discharging hydrogen gas form outside of the furnace, converting hydrogen into water by treating the gas with oxidation catalyst
05/23/2000US6066506 TFT, method of making and matrix displays incorporating the TFT
05/23/2000US6066177 Method and apparatus for calculating delay for logic circuit and method of calculating delay data for delay library
05/23/2000US6065986 Socket for semiconductor device
05/23/2000US6065973 Memory cell having active regions without N+ implants
05/18/2000WO2000028601A2 Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
05/18/2000WO2000028600A1 Reverse conducting thyristor, mechanical contact semiconductor device, and semiconductor substrate
05/18/2000WO2000028599A1 Transistor array
05/18/2000WO2000028597A1 Nonvolatile memory
05/18/2000WO2000028596A1 Memory cell arrangement
05/18/2000WO2000028582A1 Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
05/18/2000WO2000027436A1 Functionalized nanocrystals as visual tissue-specific imaging agents, and methods for fluorescence imaging
05/18/2000WO2000016404A8 Lateral bipolar transistor and method of making same.
05/18/2000WO2000008674A3 Mosfet having self-aligned gate and buried shield and method of making same
05/18/2000DE19954352A1 Semiconductor component, e.g. MOSFET, IGBT or bipolar transistor or diode; has super zone junction (SJ) and drift layer as pn-parallel layer conductive at ON state and depleted at OFF state
05/18/2000DE19954351A1 Semiconductor component with super-zone junction (SJ) and drift layer of pn-parallel layer conductive in ON state and depleted in OFF state
05/18/2000DE19954022A1 Semiconductor sensor, e.g. a capacitive-type acceleration sensor, is designed to avoid mobile and fixed section adhesion caused by electrostatic force, liquid surface tension and/or excessive external force
05/18/2000DE19851461A1 Schnelle Leistungsdiode Fast power diode
05/17/2000EP1001468A1 Rare earth oxide layer on a GaAs- or GaN-based semiconductor body
05/17/2000EP1001467A2 Semiconductor device and method of manufacturing the same
05/17/2000EP1001461A1 High speed power diode having an amorphous carbon passivation layer and corresponding method
05/17/2000EP1000439A1 Method of forming side dielectrically isolated semiconductor devices and mos semiconductor devices fabricated by this method
05/17/2000CN1253668A Device for liming AC, especially during short circuits
05/17/2000CN1253664A Semi-conductor device and use thereof
05/17/2000CN1253662A Board for mounting semiconductor element, method for manufacturing same, and semiconductor device
05/17/2000CN1253380A Semi-conductor device
05/17/2000CN1052576C 半导体器件 Semiconductor devices
05/17/2000CN1052575C Semiconductor device and manufacturing method for same
05/17/2000CN1052574C Electronic device having thin-film transistors
05/17/2000CN1052573C Method of manufacturing semiconductor device
05/17/2000CN1052572C Method for manufacturing semiconductor device
05/17/2000CN1052569C Method for fabricating semiconductor device
05/17/2000CN1052568C Method for forming semiconductor device
05/17/2000CN1052565C Method for manufacturing semiconductor device
05/17/2000CN1052564C Processf or fabricating semiconductor and process for fabricating semiconductor device
05/16/2000US6064810 System and method for predicting the behavior of a component
05/16/2000US6064606 Semiconductor integrated circuit device
05/16/2000US6064595 Floating gate memory apparatus and method for selected programming thereof
05/16/2000US6064592 Non-volatile semiconductor memory featuring effective cell area reduction using contactless technology
05/16/2000US6064456 Process for manufacturing reflection-type liquid crystal display apparatus
05/16/2000US6064454 Color filter panel of an LCD device
05/16/2000US6064316 Electrical/mechanical access control systems and methods
05/16/2000US6064109 Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
05/16/2000US6064108 Integrated interdigitated capacitor
05/16/2000US6064107 Gate structure of a semiconductor device having an air gap
05/16/2000US6064106 Bipolar transistor having isolation regions
05/16/2000US6064103 Device with a P-N junction and a means of reducing the risk of breakdown of the junction
05/16/2000US6064099 Layout of well contacts and source contacts of a semiconductor device
05/16/2000US6064096 Semiconductor LDD device having halo impurity regions
05/16/2000US6064092 Semiconductor-on-insulator substrates containing electrically insulating mesas
05/16/2000US6064091 Thin film transistors having an active region composed of intrinsic and amorphous semiconducting layers
05/16/2000US6064090 Semiconductor device having a portion of gate electrode formed on an insulating substrate
05/16/2000US6064089 Semiconductor device
05/16/2000US6064088 RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
05/16/2000US6064087 Single feature size MOS technology power device
05/16/2000US6064086 Semiconductor device having lateral IGBT
05/16/2000US6064083 Hybrid hall effect memory device and method of operation
05/16/2000US6064082 Heterojunction field effect transistor
05/16/2000US6064081 Silicon-germanium-carbon compositions and processes thereof
05/16/2000US6064080 Semiconductor device
05/16/2000US6064077 Integrated circuit transistor
05/16/2000US6064075 Field emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000° C.
05/16/2000US6064074 Semiconductor cathode and electron tube comprising a semiconductor cathode
05/16/2000US6063698 Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits
05/16/2000US6063692 Forming thin film outwardly from semiconductor substrate and separated from substrate by primary insulator layer, in-situ forming reactive layer outwardly from thin film, reacting reactive layer with outer surface of film to form silicide
05/16/2000US6063686 Method of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit device
05/16/2000US6063680 MOSFETS with a recessed self-aligned silicide contact and an extended source/drain junction
05/16/2000US6063678 Fabrication of lateral RF MOS devices with enhanced RF properties
05/16/2000US6063677 Method of forming a MOSFET using a disposable gate and raised source and drain
1 ... 1827 1828 1829 1830 1831 1832 1833 1834 1835 1836 1837 1838 1839 1840 1841 1842 1843 1844 1845 1846 1847 ... 2182