Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2000
05/31/2000EP1004139A4 Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
05/31/2000EP1004139A1 Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
05/31/2000EP1004132A1 A carbon film for field emission devices
05/31/2000EP0764346A4 High vertical aspect ratio thin film structures
05/31/2000EP0723706B1 Electrostatic discharge protection circuit
05/31/2000DE19956987A1 Verfahren zum Ausbilden einer Gate-Elektrode mit Titan-Polycid-Struktur A method of forming a gate electrode with polycide structure, titanium-
05/31/2000DE19954845A1 NAND type non-volatile ferroelectric memory cell has bit line, word lines, signal line to last transistor's gate, ferroelectric capacitors connected to word lines and transistor outputs
05/31/2000DE19950708A1 Self-aligned cobalt silicide layers of different thicknesses, e.g. for MOS transistors, are formed by locally thinning a titanium cover layer prior to reacting an underlying cobalt layer with silicon surfaces
05/31/2000DE19853743A1 Halbleiter-Bauelement mit wenigstens einer Zenerdiode und wenigstens einer dazu parallel geschalteten Schottky-Diode sowie Verfahren zum Herstellen der Halbleiter-Bauelemente Semiconductor component with at least one Zener diode connected in parallel thereto and at least one Schottky diode as well as methods for producing the semiconductor devices
05/31/2000DE19853268A1 Feldeffektgesteuerter Tranistor und Verfahren zu dessen Herstellung Field-effect-controlled Tranistor and process for its preparation
05/31/2000DE19844698C1 Backwards-conducting gate turn off thyristor has an anode-side Schottky contact or insulating layer in a separation region between a thyristor region and a diode region
05/31/2000CN1255239A Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
05/31/2000CN1255238A Trench-isolated bipolar devices
05/31/2000CN1254958A Electronic device, array device, photoelectric display and semiconductor memory with thin-film transistors
05/31/2000CN1254957A Electronic device, array device, photoelectric display and semiconductor memory with thin-film transistors
05/31/2000CN1254955A Semiconductor device and its associated ICs
05/31/2000CN1254953A Semiconductor and method for forming said device
05/31/2000CN1254951A Process for preparing thin-film transistor
05/31/2000CN1254950A Integrated circuit with self-aligning hydrogen barrier layer and its preparing process
05/31/2000CN1254948A Thin-film transistor array panel and its making method
05/31/2000CN1254947A Method for manufacturing thin-film transistor
05/31/2000CN1053067C Electrostatic discharge protection circuit for CMOS IC
05/31/2000CN1053066C Electrostatic discharge protection circuit for CMOS IC
05/30/2000US6069826 Method of rewriting in nonvolatile semiconductor memory device
05/30/2000US6069820 Spin dependent conduction device
05/30/2000US6069682 Spherical shaped semiconductor integrated circuit
05/30/2000US6069485 C-V method to extract lateral channel doping profiles of MOSFETs
05/30/2000US6069404 Arrangement for the reduction of noise in microwave transistors and method for the manufacture thereof
05/30/2000US6069399 Vertical bipolar semiconductor power transistor with an interdigitized geometry, with optimization of the base-to-emitter potential difference
05/30/2000US6069396 High breakdown voltage semiconductor device
05/30/2000US6069392 Microbellows actuator
05/30/2000US6069391 Semiconductor device with boosting circuit and detecting circuit
05/30/2000US6069390 Semiconductor integrated circuits with mesas
05/30/2000US6069389 Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high-speed circuit
05/30/2000US6069388 Semiconductor device and production method thereof
05/30/2000US6069387 Lightly doped drain formation integrated with source/drain formation for high-performance transistor formation
05/30/2000US6069386 Semiconductor device
05/30/2000US6069385 Trench MOS-gated device
05/30/2000US6069384 Integrated circuit including vertical transistors with spacer gates having selected gate widths
05/30/2000US6069382 Non-volatile memory cell having a high coupling ratio
05/30/2000US6069381 Ferroelectric memory transistor with resistively coupled floating gate
05/30/2000US6069380 Single-electron floating-gate MOS memory
05/30/2000US6069379 Semiconductor device and method of manufacturing the same
05/30/2000US6069375 Field effect transistor
05/30/2000US6069373 Compact semiconductor device using SOI•CMOS technology
05/30/2000US6069372 Insulated gate type semiconductor device with potential detection gate for overvoltage protection
05/30/2000US6069371 Semiconductor rectifier and a method for driving the same
05/30/2000US6069370 Field-effect transistor and fabrication method thereof and image display apparatus
05/30/2000US6069368 Method for growing high-quality crystalline Si quantum wells for RTD structures
05/30/2000US6069367 Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices
05/30/2000US6069061 Method for forming polysilicon gate
05/30/2000US6069047 Method of making damascene completely self aligned ultra short channel MOS transistor
05/30/2000US6069045 Method of forming C49-structure tungsten-containing titanium salicide structure
05/30/2000US6069043 Method of making punch-through field effect transistor
05/30/2000US6069042 Multi-layer spacer technology for flash EEPROM
05/30/2000US6069041 Process for manufacturing non-volatile semiconductor memory device by introducing nitrogen atoms
05/30/2000US6069040 Fabricating a floating gate with field enhancement feature self-aligned to a groove
05/30/2000US6069034 DMOS architecture using low N-source dose co-driven with P-body implant compatible with E2 PROM core process
05/30/2000US6069032 Salicide process
05/30/2000US6069030 CMOSFET and method for fabricating the same
05/30/2000US6069029 Semiconductor device chip on lead and lead on chip manufacturing
05/30/2000US6069019 Method of manufacturing transistor array
05/30/2000US6068818 Electronic device for performing active biological operations; and methods for manufacture of such devices containing active electrodes especially adapted for electrophoretic transport of nucleic acids, their hybridization and analysis
05/30/2000US6068698 P-type silicon macromolecule used in a transistor and process for manufacture of the macromolecule
05/30/2000CA2135995C Tft with reduced parasitic capacitance
05/25/2000WO2000030185A1 Quantum well thermoelectric material on very thin substrate
05/25/2000WO2000030183A1 Transistor and semiconductor device
05/25/2000WO2000030182A2 Offset drain fermi-threshold field effect transistors
05/25/2000WO2000030181A2 Field effect-controlled transistor and method for producing the same
05/25/2000WO2000030180A1 METHOD AND SYSTEM FOR EMITTER PARTITIONING FOR SiGe RF POWER TRANSISTORS
05/25/2000WO2000030179A1 High temperature transistor with reduced risk of electromigration
05/25/2000WO2000030177A1 Semiconductor component with dielectric or semi-insulating shielding structures
05/25/2000WO2000030174A1 A method and device for improved salicide resistance on polysilicon gates
05/25/2000WO2000030169A1 Field effect transistor structure with abrupt source/drain junctions
05/25/2000WO2000029824A1 Integral stress isolation apparatus and technique for semiconductor devices
05/25/2000WO2000017914A3 Method for forming silicide regions on an integrated device
05/25/2000WO2000017913A3 Method for forming a silicide region on a silicon body
05/25/2000WO2000006983A9 Flexible silicon strain gage
05/25/2000DE19904865A1 Halbleiterbauelement mit dielektrischen oder halbisolierenden Abschirmstrukturen Semiconductor device with dielectric or semi-insulating shielding structures
05/25/2000CA2346416A1 Offset drain fermi-threshold field effect transistors
05/24/2000EP1003272A2 Switching circuit
05/24/2000EP1003227A2 Semiconductor device
05/24/2000EP1003224A1 Analogue MISFET with threshold voltage adjuster
05/24/2000EP1003223A2 Method of fabricating a TFT
05/24/2000EP1003222A1 Improved field-effect transistor and corresponding manufacturing method
05/24/2000EP1003218A1 Semiconductor devices comprising a Schottky diode and a diode having a highly doped region and corresponding manufacturing methods
05/24/2000EP1003208A2 Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same
05/24/2000EP1003150A1 Transistor circuit, display panel and electronic apparatus
05/24/2000EP1003026A2 Scanning depletion microscopy for carrier profiling
05/24/2000EP1003021A2 Semiconductor device comprising a pressure sensor and a semiconductor chip
05/24/2000EP1002339A1 Contact arrangement for a planar, integrable semiconductor arrangement and method for producing said contact arrangement
05/24/2000EP1002338A1 Wafer marking
05/24/2000EP1002334A1 Method for configuring semiconductors with high precision, good homogeneity and reproducibility
05/24/2000CN1254443A Flat semiconductor device and power converter employing the same
05/24/2000CN1254442A Silicon carbide field controlled bipolar switch
05/24/2000CN1254187A Semiconductor device
05/24/2000CN1052817C Insulated-gate device (IG device) having narrowbandgap-source structure and method of manufacturing the same
05/24/2000CN1052816C 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
05/24/2000CN1052815C 薄膜半导体集成电路 Thin-film semiconductor integrated circuit
05/24/2000CN1052814C Unit of semiconductor IC
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