Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2000
06/13/2000US6075254 Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors
06/13/2000US6074938 Method of forming a semiconductor device comprising a dummy polysilicon gate electrode short-circuited to a dummy element region in a substrate
06/13/2000US6074925 Method for fabricating semiconductor device with polycide structure for electrode or interconnect
06/13/2000US6074920 Self-aligned implant under transistor gate
06/13/2000US6074919 Method of forming an ultrathin gate dielectric
06/13/2000US6074917 LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices
06/13/2000US6074916 FLASH-EPROM with embedded EEPROM
06/13/2000US6074914 Integration method for sidewall split gate flash transistor
06/13/2000US6074900 Method for producing semiconductor device
06/08/2000WO2000033386A2 Trench-gate semiconductor devices and their manufacture
06/08/2000WO2000033385A1 Mos field effect transistor with an auxiliary electrode
06/08/2000WO2000033382A1 Integrated circuit and method for the production thereof
06/08/2000WO2000033381A1 Semiconductor device having shared gate electrode and fabrication thereof
06/08/2000WO2000033380A1 Controllable semiconductor element with a gate series resistor
06/08/2000WO2000033373A2 Method of manufacturing a semiconductor device comprising a bipolar transistor
06/08/2000WO2000033354A2 High-efficiency heterostructure thermionic coolers
06/08/2000WO2000033353A2 Field-effect semiconductor devices
06/08/2000WO2000033317A1 Semiconductor device comprising a non-volatile memory which is erasable by means of uv irradiation
06/08/2000WO2000033047A1 Pressure sensor
06/08/2000WO2000032853A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same
06/08/2000WO2000011376A3 Control device in a motor vehicle
06/08/2000WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
06/08/2000DE19952316A1 Verfahren zum Ausbilden einer Siliziumdioxidschicht und Verfahren zum Herstellen eines Dünnfilmtransistors dadurch A method of forming a silicon dioxide layer and method for manufacturing a thin film transistor characterized
06/08/2000DE19854938A1 Component used as a solar cell or LED, has layers separated by an interlayer containing one or both layer materials and a different conductivity material colloid
06/08/2000DE19854915A1 MOS-Feldeffekttransistor mit Hilfselektrode MOS field-effect transistor with an auxiliary electrode
06/08/2000DE19854269A1 Dünnschichtsolarzellenanordnung sowie Verfahren zur Herstellung derselben Thin film solar cell arrangement and method of manufacturing the same
06/08/2000CA2352241A1 Pressure sensor
06/07/2000EP1006590A1 Ferroelectric memory and method for manufacturing same
06/07/2000EP1006589A2 MOS thin film transistor and method of fabricating same
06/07/2000EP1006584A2 Semiconductor device having SOI structure and manufacturing method thereof
06/07/2000EP1006583A1 Ferroelectric memory device and method for manufacturing same
06/07/2000EP1006581A1 Ferroelectric memory device having a protective layer
06/07/2000EP1006573A1 Method for manufacturing integrated BiCMOS circuits on a common CMOS substrate
06/07/2000EP1006394A1 Liquid crystal display device
06/07/2000CN1255751A Ferroelectric integrated circuit with oxygen doped protective layer
06/07/2000CN1255750A Semiconductor device and method of forming such semiconductor device
06/07/2000CN1255745A Forming method of level surafce spacing layer and device formed therefrom
06/07/2000CN1255742A Semiconductor mfg. tech, and tech. for mfg. semiconductor device
06/07/2000CN1255740A Diaphragm transistor array panel, its mfg. method and photolithography of same disphragm
06/07/2000CN1255739A Method for forming grid with polycrystal silicone-titanium silicide structure
06/07/2000CN1255737A Method for setting up difference filling condition
06/07/2000CN1255732A Semiconductor mfg. tech. and semiconductor device mfg. tech.
06/07/2000CN1255697A Electronic device, matrix device, photoelectric displaying device and semiconductor memory with film transistor
06/07/2000CN1053296C Semiconductor device and method of mfg. same
06/07/2000CN1053295C Photodiode array
06/07/2000CN1053292C Method of fabricating semiconductor device
06/06/2000US6072724 Semiconductor integrated circuit for generating plurality of different reference levels
06/06/2000US6072722 Method of driving a nonvolatile semiconductor storage device
06/06/2000US6072720 Nonvolatile reprogrammable interconnect cell with programmable buried bitline
06/06/2000US6072445 Head mounted color display system
06/06/2000US6072239 Device having resin package with projections
06/06/2000US6072231 Semiconductor device
06/06/2000US6072221 Semiconductor device having self-aligned contact plug and metallized gate electrode
06/06/2000US6072220 Integrated resistor
06/06/2000US6072216 Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
06/06/2000US6072215 Semiconductor device including lateral MOS element
06/06/2000US6072214 IGBT with trench gate structure
06/06/2000US6072212 EPROM cell array using N-tank as common source
06/06/2000US6072208 Dynamic random access memory fabricated with SOI substrate
06/06/2000US6072207 Process for fabricating layered superlattice materials and making electronic devices including same
06/06/2000US6072203 Field effect transistor comprising semi-insulating substrate, channel forming layer, indium-gallium-(phosphide or arsenide) schottky contact layer, titanium(ti) gate electrode, barrier layer to prevent ti from diffusing into channel forming layer
06/06/2000US6072202 II-VI compound semiconductor device with III-V buffer layer
06/06/2000US6072200 Gate unit for a hard-driven GTO
06/06/2000US6072199 Insulated gate bipolar transistor
06/06/2000US6072194 Laser anneal method for a semiconductor device
06/06/2000US6072193 Thin-film transistor and semiconductor device using thin-film transistors
06/06/2000US6071832 Method for manufacturing a reliable semiconductor device using ECR-CVD and implanting hydrogen ions into an active region
06/06/2000US6071825 Fully overlapped nitride-etch defined device and processing sequence
06/06/2000US6071807 Fabrication method of semiconductor device including insulation film with decomposed organic content
06/06/2000US6071803 Electrical contact to buried SOI structures
06/06/2000US6071794 Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulator
06/06/2000US6071783 Pseudo silicon on insulator MOSFET device
06/06/2000US6071782 Partial silicidation method to form shallow source/drain junctions
06/06/2000US6071781 Method of fabricating lateral MOS transistor
06/06/2000US6071780 Compound semiconductor apparatus and method for manufacturing the apparatus
06/06/2000US6071766 Method for fabricating semiconductor thin film
06/06/2000US6071765 Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
06/06/2000US6071315 Two-dimensional to three-dimensional VLSI design
06/02/2000WO2000031802A1 Slotted quantum well sensor
06/02/2000WO2000031801A1 Renormalization tunnel diode
06/02/2000WO2000031800A1 Semiconductor device and fabrication method therefor
06/02/2000WO2000031795A1 Nonvolatile memory
06/02/2000WO2000031793A1 Peripheral transistor of a non-volatile memory
06/02/2000WO2000031790A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicum oxynitride layer
06/02/2000WO2000031784A1 Method for forming transistors on a thin semiconductor wafer
06/02/2000WO2000031783A1 Fabrication of gallium nitride layers on silicon
06/02/2000WO2000031776A2 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
06/02/2000WO2000031714A1 Electro-optical device and production method thereof and electronic equipment
06/02/2000WO2000031581A1 Active matrix liquid crystal display devices
06/02/2000WO2000013227A3 Method of manufacturing a semiconductor device with a bipolar transistor
06/02/2000WO2000011441A3 Pressure sensor and method of forming the same
06/01/2000CA2290048A1 Semiconductor device with low parasitic capacitance
05/2000
05/31/2000EP1005159A1 Switching circuit
05/31/2000EP1005094A2 Semiconductor devices having a thin film field-effect transistor and corresponding manufacturing methods
05/31/2000EP1005092A1 High breakdown voltage PN junction structure and related manufacturing process
05/31/2000EP1005091A1 A method of manufacturing a vertical-channel MOSFET
05/31/2000EP1005081A2 Semiconductor nonvolatile memory and manufacturing method thereof
05/31/2000EP1005079A1 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
05/31/2000EP1004923A2 Liquid crystal display device with light diffusing layer
05/31/2000EP1004882A2 Inertia sensor and method of fabricating the same
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