Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2000
06/20/2000US6078086 Metal oxide semiconductor field effect transistor and method of manufacturing the same
06/20/2000US6078082 Field-effect transistor having multi-part channel
06/20/2000US6078081 Semiconductor device for improving short channel effect
06/20/2000US6078080 Asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
06/20/2000US6078078 V-gate transistor
06/20/2000US6078077 Power device
06/20/2000US6078076 Vertical channels in split-gate flash memory cell
06/20/2000US6078075 Semiconductor device with a programmable element having a P-type substrate and floating gate with a thin gate dielectric
06/20/2000US6078074 Semiconductor device having multilayer metal interconnection
06/20/2000US6078073 Semiconductor apparatus formed by SAC (self-aligned contact) method and manufacturing method therefor
06/20/2000US6078071 High-speed compound semiconductor device having an improved gate structure
06/20/2000US6078069 Bidirectional horizontal charge transfer device
06/20/2000US6078067 Semiconductor device having mutually different two gate threshold voltages
06/20/2000US6078065 Bilaterally controllable thyristor
06/20/2000US6078060 Active matrix display devices and methods of manufacturing the active matrix display devices
06/20/2000US6078059 Fabrication of a thin film transistor and production of a liquid display apparatus
06/20/2000US6078016 Semiconductor accelerometer switch
06/20/2000US6077761 Method for fabricating a transistor gate with a T-like structure
06/20/2000US6077760 Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics
06/20/2000US6077759 Method of producing semiconductor device
06/20/2000US6077753 Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide
06/20/2000US6077751 Method of rapid thermal processing (RTP) of ion implanted silicon
06/20/2000US6077749 Method of making dual channel gate oxide thickness for MOSFET transistor design
06/20/2000US6077747 Method of manufacturing semiconductor device
06/20/2000US6077745 Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
06/20/2000US6077744 Semiconductor trench MOS devices
06/20/2000US6077736 Method of fabricating a semiconductor device
06/20/2000US6077733 Method of manufacturing self-aligned T-shaped gate through dual damascene
06/20/2000US6077732 Method of forming a thin film transistor
06/20/2000US6077731 Semiconductor device and method for fabricating the same
06/20/2000US6077730 Method of fabricating thin film transistors
06/20/2000US6077729 Memory array having a multi-state element and method for forming such array or cellis thereof
06/20/2000US6077721 Containing aluminosilicate glass
06/15/2000WO2000035024A1 Thin-film solar array system and method for producing the same
06/15/2000WO2000035023A1 Lateral thin-film silicon-on-insulator (soi) device having multiple zones in the drift region
06/15/2000WO2000035022A1 Insulated gate bipolar transistor for zero-voltage switching
06/15/2000WO2000035021A1 Power semiconductor switch
06/15/2000WO2000035020A1 Lateral high-voltage semiconductor component with reduced specific closing resistor
06/15/2000WO2000035019A1 Femfet device and method for producing same
06/15/2000WO2000035018A1 Sidewall junction for bipolar semiconductor devices
06/15/2000WO2000035017A1 Analogue switch
06/15/2000WO2000035005A1 Semiconductor process flow for nand flash memory products
06/15/2000WO2000034985A2 Method for structuring a metalliferous layer
06/15/2000WO2000034984A2 Transistor with notched gate
06/15/2000WO2000034754A1 Semiconductor pressure sensor and its manufacturing method
06/15/2000WO2000034548A1 Multiple-thickness gate oxide formed by oxygen implantation
06/15/2000WO2000004587A3 Nitride based transistors on semi-insulating silicon carbide substrates
06/15/2000DE19959135A1 Sensor, especially a plane-parallel capacitive-type acceleration sensor, has a structure for limiting movement of a mobile electrode made of different material
06/15/2000DE19857640A1 Bipolartransistor und Verfahren zu seiner Herstellung Bipolar transistor and method for its preparation
06/15/2000DE19857275A1 Integrated split-current Hall effect magnetic flux density sensor, e.g. for automobile and automation applications, has magnetic field sensitive elements and contacts produced by one or two photolithographic masking steps
06/15/2000CA2354522A1 Analogue switch
06/14/2000EP1009036A1 High-voltage MOS-gated power device, and related manufacturing process
06/14/2000EP1009035A1 Insulated gate semiconductor device and method for manufacturing the same
06/14/2000EP1009034A1 Semiconductor quantum oscillation device
06/14/2000EP1009022A1 Manufacturing process of a high integration density power MOS device
06/14/2000EP1008896A1 Liquid crystal display device
06/14/2000EP1008893A1 Active matrix liquid crystal display
06/14/2000EP1008187A2 Semiconductor device having a rectifying junction and method of manufacturing same
06/14/2000EP1008186A1 Power transistor cell
06/14/2000EP1008185A1 Semiconductor structure with a silicon carbide material base, with several electrically different sub-regions
06/14/2000EP1008184A1 Lateral high-voltage transistor
06/14/2000EP1008182A1 High voltage component and method for making same
06/14/2000EP1008179A1 Method for producing a matrix from thin film transistors with storage capacities
06/14/2000EP1008177A1 Improved active matrix esd protection and testing scheme
06/14/2000EP1008174A1 A method of fabricating cmos devices with ultra-shallow junctions and reduced drain area
06/14/2000EP1008171A1 METHOD FOR THERMAL SELF-HEALING OF AN SiC SEMICONDUCTOR AREA DOPED BY MEANS OF IMPLANTATION AND A SiC BASED SEMICONDUCTOR COMPONENT
06/14/2000EP1008170A1 Method of controlling dopant concentrations by implanting gettering atoms
06/14/2000EP1008169A1 Producing microstructures or nanostructures on a support
06/14/2000EP0956585A4 Method for formation of thin film transistors on plastic substrates
06/14/2000CN1256794A Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate and liquid crystal display
06/14/2000CN1256793A Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
06/14/2000CN1256792A 三维器件 3D device
06/14/2000CN1256763A Active matrix substrate, electro-optic device, method of manufacturing active matrix substrate, and electronic device
06/14/2000CN1256521A Semiconductor device of SOI structure
06/14/2000CN1256520A Semiconductor device
06/14/2000CN1256517A Semiconductor device with logic circuit and memory circuit
06/14/2000CN1256516A Circuit and method for reducing ghost double-pole effect during static discharge
06/14/2000CN1256510A Method for manufacture of semiconductor device
06/14/2000CN1053537C Electrical charge transfer apparatus
06/14/2000CN1053528C Narrow forbidden band source leakage range metal oxide semiconductor field effect transistor
06/14/2000CN1053527C Isolated gate heterojunction double-pole transistor
06/13/2000US6075738 Semiconductor memory device
06/13/2000US6075723 Nonvolatile semiconductor memory device and IC memory card using same
06/13/2000US6075580 Active matrix type liquid crystal display apparatus with conductive light shield element
06/13/2000US6075505 Active matrix liquid crystal display
06/13/2000US6075292 Semiconductor device and method of manufacturing the same in which degradation due to plasma can be prevented
06/13/2000US6075280 Precision breaking of semiconductor wafer into chips by applying an etch process
06/13/2000US6075277 Power integrated circuit
06/13/2000US6075274 Semiconductor devices having gate stack with improved sidewall integrity
06/13/2000US6075273 Integrated circuit device in which gate oxide thickness is selected to control plasma damage during device fabrication
06/13/2000US6075272 Structure for gated lateral bipolar transistors
06/13/2000US6075270 Field effect transistor
06/13/2000US6075269 Semiconductor device and process for manufacturing the same
06/13/2000US6075267 Split-gate non-volatile semiconductor memory device
06/13/2000US6075266 Semiconductor device having MIS transistors and capacitor
06/13/2000US6075264 Structure of a ferroelectric memory cell and method of fabricating it
06/13/2000US6075263 Method of evaluating the surface state and the interface trap of a semiconductor
06/13/2000US6075262 Semiconductor device having T-shaped gate electrode
06/13/2000US6075259 Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages
06/13/2000US6075257 Thin film transistor substrate for a liquid crystal display having a silicide prevention insulating layer in the electrode structure
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