Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2000
06/29/2000DE19858827A1 Sensor Sensor
06/29/2000DE19857038A1 FEMFET-Vorrichtung und Verfahren zu deren Herstellung FEMFET apparatus and process for their preparation
06/28/2000EP1014453A1 Semiconductor device and method for manufacturing the same
06/28/2000EP1014452A1 Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display
06/28/2000EP1014450A2 Trench MOSFET having improved breakdown and on-resistance characteristics and process for manufacturing the same
06/28/2000EP1014448A2 Nonvolatile semiconductor memory device and method of manufacturing the same
06/28/2000EP1014435A2 Field-effect transistor and method of producing the same
06/28/2000EP1014432A1 Method for forming the gate oxide of metal-oxide-semiconductor devices
06/28/2000EP1014381A1 Semiconductor memory device and storage method thereof
06/28/2000EP1014095A2 Semiconductor dynamic quantity-sensor and method of its manufacture
06/28/2000EP1012971A1 Forward body bias transistor circuits
06/28/2000EP1012885A1 Component with rectifying function, fulfilled by means of charge transport by ions
06/28/2000EP1012884A1 Non-volatile memory cell
06/28/2000EP1012882A1 Multiple gated mosfet for use in dc-dc converter
06/28/2000EP1012879A4 Fabrication method for reduced-dimension integrated circuits
06/28/2000EP1012879A2 Fabrication method for reduced-dimension integrated circuits
06/28/2000EP1012878A1 Reduction of charge loss in nonvolatile memory cells by phosphorous implantation into pecvd nitride/oxynitride films
06/28/2000EP0876681B1 Semiconductor neuron with variable input weights
06/28/2000EP0729647B1 Diamond shaped gate mesh for cellular mos transistor array
06/28/2000CN1258381A Semiconductor device and its use
06/28/2000CN1258367A Transistor circuit, display panel and electronic apparatus
06/28/2000CN1258104A Semiconductor device and its mfg. method
06/28/2000CN1258102A Semiconductor device and its mfg. method
06/28/2000CN1258040A Circuit structure and method for resolution of conversion sensor
06/27/2000US6081662 Semiconductor device including trench isolation structure and a method of manufacturing thereof
06/27/2000US6081474 Semiconductor memory
06/27/2000US6081470 All optics type semiconductor image storage apparatus, and all optics type semiconductor logical operation apparatus
06/27/2000US6081454 Electrically erasable programmable read-only memory with threshold value controller for data programming
06/27/2000US6081453 Nonvolatile semiconductor memory device
06/27/2000US6081451 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
06/27/2000US6081417 Capacitor having a ferroelectric layer
06/27/2000US6081308 Method for manufacturing liquid crystal display
06/27/2000US6081023 Semiconductor device
06/27/2000US6081019 Semiconductor diode with suppression of auger generation processes
06/27/2000US6081018 Solid state image sensor
06/27/2000US6081013 Semiconductor device having a reduced distance between the input resistor and the internal circuit
06/27/2000US6081011 CMOS logic gate having buried channel NMOS transistor for semiconductor devices and fabrication method of the same
06/27/2000US6081010 MOS semiconductor device with self-aligned punchthrough stops and method of fabrication
06/27/2000US6081009 High voltage mosfet structure
06/27/2000US6081007 Semiconductor device comprising MIS transistor with high concentration channel injection region
06/27/2000US6081006 Reduced size field effect transistor
06/27/2000US6081003 Heterojunction bipolar transistor with ballast resistor
06/27/2000US6080998 Amorphous silicon germanium thin film and photovoltaic element
06/27/2000US6080996 Unipolar three-terminal resonant-tunneling transistor
06/27/2000US6080995 Quantum device
06/27/2000US6080676 Dry etch process; main flow of gas that includes an argon flow at an argon flow rate and a fluorocarbon flow; applying rf power in the frequency range of 360 to 440 khz
06/27/2000US6080648 Insulated gate field effect transistor using a salicide (self-aligned silicidation) technology.
06/27/2000US6080646 Method of fabricating a metal-oxide-semiconductor transistor with a metal gate
06/27/2000US6080645 Method of making a doped silicon diffusion barrier region
06/27/2000US6080644 Complementary bipolar/CMOS epitaxial structure and process
06/27/2000US6080643 Vapor deposition; laser annealing; doping; patterning
06/27/2000US6080631 Method for manufacturing self-alignment type bipolar transistor having epitaxial base layer
06/27/2000US6080630 Method for forming a MOS device with self-compensating VT -implants
06/27/2000US6080624 Nonvolatile semiconductor memory and method for manufacturing the same
06/27/2000US6080617 Semiconductor device having capacitor and manufacturing method thereof
06/27/2000US6080614 Method of making a MOS-gated semiconductor device with a single diffusion
06/27/2000US6080612 Method of forming an ultra-thin SOI electrostatic discharge protection device
06/27/2000US6080611 Silicon thin film containing impurities
06/27/2000US6080610 Method a CMOS transistor and isolated back electrodes on an SOI substrate
06/27/2000US6080609 Method of making MOSFET structure
06/27/2000US6080607 Method for manufacturing a transistor having a low leakage current
06/27/2000US6080596 Method for forming vertical interconnect process for silicon segments with dielectric isolation
06/27/2000US6080593 Multilayer; dielectric, ferroelectric layer and electrodes
06/27/2000US6080499 Lead zirconium titanate
06/27/2000US6080239 Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal
06/27/2000US6080236 Electronic device manufacture
06/27/2000CA2166752C Article comprising .alpha.-hexathienyl
06/22/2000WO2000036666A1 Method for printing of transistor arrays on plastic substrates
06/22/2000WO2000036655A1 Lateral thin-film silicon-on-insulator (soi) jfet device
06/22/2000WO2000036654A1 Power semiconductor component
06/22/2000WO2000036653A1 Bipolar transistor and method for producing same
06/22/2000WO2000036652A2 Method of manufacturing a gate electrode
06/22/2000WO2000036642A1 Method of forming a non-volatile memory device
06/22/2000WO2000036641A1 Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device
06/22/2000WO2000036634A2 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor
06/22/2000WO2000017423A3 Method for producing an amorphous or polycrystalline layer on an insulating region
06/22/2000WO2000012987A3 Micromechanical component protected against environmental influences
06/22/2000CA2352062A1 Method for printing of transistor arrays on plastic substrates
06/21/2000EP1011149A2 Semiconductor memory device and method for producing the same
06/21/2000EP1011148A2 Semiconductor insulated gate switching device and method of driving the same
06/21/2000EP1011147A2 Transistors having a quantum-wave interference layer
06/21/2000EP1011146A1 Integrated edge structure for high voltage semiconductor devices and related manufacturing process
06/21/2000EP1011144A1 Semiconductor device and manufacturing method thereof
06/21/2000EP1011133A1 Encapsulated microelectronic SMD component, especially for an active implantable medical device and method for its manufacture
06/21/2000EP1011130A1 Method of anodizing silicon substrate and method of producing acceleration sensor of surface type
06/21/2000EP1010205A2 Lone-electron circuit arrangement, operating mode, and application for adding binary numbers
06/21/2000EP1010204A1 Semiconductor structure comprising an alpha silicon carbide zone, and use of said semiconductor structure
06/21/2000EP1010200A1 Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion
06/21/2000EP1010182A2 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
06/21/2000DE19939120A1 Halbleiterdrucksensor Semiconductor pressure sensor
06/21/2000CN1257578A Batch fabricated semiconductor thin-film pressure sensor and method of making same
06/21/2000CN1257307A Method for making semiconductor device
06/21/2000CN1257304A Thin film transistor array panel for liquid crystal display and making method thereof
06/21/2000CN1257303A Method for making crystal semiconductor
06/20/2000US6078522 Non-volatile semiconductor memory device
06/20/2000US6078368 Active matrix substrate, liquid crystal apparatus using the same and display apparatus using such liquid crystal apparatus
06/20/2000US6078106 Semiconductor memory device having a plurality of wiring layers
06/20/2000US6078095 Power transistor including a plurality of unit transistors
06/20/2000US6078090 Trench-gated Schottky diode with integral clamping diode
06/20/2000US6078089 Substrate, and electrode structure over the substrate including a cobalt niobate insulating layer and electrode layer of cobalt silicide over the insulating layer; increased operating speeds over conventional transistors
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