| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/11/2000 | US6087213 Semiconductor memory device and manufacturing method thereof |
| 07/11/2000 | US6087209 Formation of low resistance, ultra shallow LDD junctions employing a sub-surface, non-amorphous implant |
| 07/11/2000 | US6087208 Method for increasing gate capacitance by using both high and low dielectric gate material |
| 07/11/2000 | US6087207 Providing channel layer over substrate, doped barrierlayer, protective layer, etch stop layer; providing mask over surface; etching; depositing metal over mask |
| 07/11/2000 | US6087206 Method of fabricating a top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen |
| 07/11/2000 | US6087205 Forming undoped indium tin oxide transparent conductor film on insulator; forming doped indium tin oxide film; patterning laminations, forming amorphous silicon layer over source/drain electrodes along with heat treatment |
| 07/11/2000 | US6087199 Method for fabricating a very dense chip package |
| 07/06/2000 | WO2000039858A2 Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage |
| 07/06/2000 | WO2000039855A1 Avalanche programmed floating gate memory cell structure with the program element comprising an avalanche diode formed in the first polysilicon layer |
| 07/06/2000 | WO2000039805A1 Floating gate memory apparatus and method for selected programming thereof |
| 07/06/2000 | WO2000025364A3 Bipolar high-volt power component |
| 07/06/2000 | WO2000008674A9 Mosfet having self-aligned gate and buried shield and method of making same |
| 07/06/2000 | WO2000002253A3 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 07/06/2000 | DE19962650A1 Oberflächenkleinstgerät Surface micro device |
| 07/06/2000 | DE19962053A1 Semiconductor device with silicon-on-insulator structure has semiconductor regions in latter separated via separation regions with insulating upper part and semiconductor lower part |
| 07/06/2000 | DE19958144A1 Programmierbare Zwischenverbindungszelle zum wahlweisen Verbinden von Schaltkreisknoten in einem integrierten Schaltkreis Programmable interconnect cell for selectively connecting circuit nodes in an integrated circuit |
| 07/06/2000 | DE19958143A1 Programmable connection for logic IC circuit nodes using switching FET with floating gate coupled to floating gate of read FET |
| 07/06/2000 | DE19934758A1 Semiconductor device, e.g. double diffused metal oxide semiconductor transistor has a control electrode extending above and between different depth interfaces between a first conductivity type region and two second conductivity type regions |
| 07/06/2000 | DE19860581A1 Halbleiterelement und Verfahren zur Herstellung Semiconductor element and process for producing |
| 07/05/2000 | EP1017108A2 Semiconductor devices and methods of manufacturing the same |
| 07/05/2000 | EP1017104A2 Ferroelectric intergrated circuit with protective layer incorporating oxygen and method for fabricating same |
| 07/05/2000 | EP1017103A1 Power switch with DI/DT control |
| 07/05/2000 | EP1017100A1 Three-dimensional device |
| 07/05/2000 | EP1017097A1 Manufacturing method of salicide contacts for non-volatile memory |
| 07/05/2000 | EP1017095A2 DRAM trench capacitor cell |
| 07/05/2000 | EP1017093A1 Power semiconductor device and process for manufacturing it |
| 07/05/2000 | EP1017089A2 Method of manufacturing a gate electrode |
| 07/05/2000 | EP1017088A1 Selective salicization process for semiconductor devices |
| 07/05/2000 | EP1016216A1 Quantum computer |
| 07/05/2000 | EP1016143A2 Electrode means, comprising polymer materials, with or without functional elements and an electrode device formed of said means |
| 07/05/2000 | EP1016142A2 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION |
| 07/05/2000 | EP1016139A1 Rf power device having voltage controlled linearity |
| 07/05/2000 | EP1016135A1 Fusion-bond electrical feed-through |
| 07/05/2000 | EP1016085A1 Flash memory array |
| 07/05/2000 | EP1015843A1 Lever arm for a scanning microscope |
| 07/05/2000 | CN2386532Y High-efficient cooling silicon rectifying bridge |
| 07/05/2000 | CN1259228A Semiconductor component and method for producing the same |
| 07/05/2000 | CN1259225A Method for arrangement of a buried capacitor, and a buried capacitor arranged according to said method |
| 07/05/2000 | CN1258933A Semiconductor integrated circuit and its producing method |
| 07/05/2000 | CN1258594A Preparation of fast responsive discoloring film |
| 07/05/2000 | CN1054235C Semiconductor device and method for mfg. same |
| 07/04/2000 | US6084799 Nonvolatile semiconductor memory having improved source line drive circuit |
| 07/04/2000 | US6084798 Non-volatile memory structure |
| 07/04/2000 | US6084653 Liquid crystal display having an active matrix substrate with thermosetting inter-layer insulating film with a thickness of greater than 2 μM |
| 07/04/2000 | US6084462 Temperature sensing circuits |
| 07/04/2000 | US6084436 Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance |
| 07/04/2000 | US6084289 Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass, and a semiconductor structure |
| 07/04/2000 | US6084284 Integrated circuit including inverted dielectric isolation |
| 07/04/2000 | US6084283 Semiconductor device and method of manufacturing the same |
| 07/04/2000 | US6084279 Semiconductor device having a metal containing layer overlying a gate dielectric |
| 07/04/2000 | US6084278 MOSFET with gradiently doped polysilicon gate electrode |
| 07/04/2000 | US6084277 Lateral power MOSFET with improved gate design |
| 07/04/2000 | US6084276 Threshold voltage tailoring of corner of MOSFET device |
| 07/04/2000 | US6084273 Analogue misfet with threshold voltage adjuster |
| 07/04/2000 | US6084271 Transistor with local insulator structure |
| 07/04/2000 | US6084270 Semiconductor integrated-circuit device having n-type and p-type semiconductor conductive regions formed in contact with each other |
| 07/04/2000 | US6084269 Semiconductor device and method of making |
| 07/04/2000 | US6084268 Power MOSFET device having low on-resistance and method |
| 07/04/2000 | US6084266 Layout of semiconductor devices to increase the packing density of a wafer |
| 07/04/2000 | US6084264 Trench MOSFET having improved breakdown and on-resistance characteristics |
| 07/04/2000 | US6084263 Power device having high breakdown voltage and method of manufacturing the same |
| 07/04/2000 | US6084262 Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current |
| 07/04/2000 | US6084260 Semiconductor storage device and method for manufacturing the same |
| 07/04/2000 | US6084258 Metal-semiconductor junction fet |
| 07/04/2000 | US6084254 Lateral bipolar mode field effect transistor |
| 07/04/2000 | US6084253 Low voltage four-layer device with offset buried region |
| 07/04/2000 | US6084248 Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor |
| 07/04/2000 | US6084247 Semiconductor device having a catalyst enhanced crystallized layer |
| 07/04/2000 | US6083846 Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
| 07/04/2000 | US6083836 Transistors with substitutionally formed gate structures and method |
| 07/04/2000 | US6083814 Method for producing a pn-junction for a semiconductor device of SiC |
| 07/04/2000 | US6083801 Manufacturing method of semiconductor and manufacturing method of semiconductor device |
| 07/04/2000 | US6083800 Method for fabricating high voltage semiconductor device |
| 07/04/2000 | US6083798 Method of producing a metal oxide semiconductor device with raised source/drain |
| 07/04/2000 | US6083796 Semiconductor device and method for fabricating the same |
| 07/04/2000 | US6083795 Large angle channel threshold implant for improving reverse narrow width effect |
| 07/04/2000 | US6083794 Method to perform selective drain engineering with a non-critical mask |
| 07/04/2000 | US6083793 Method to manufacture nonvolatile memories with a trench-pillar cell structure for high capacitive coupling ratio |
| 07/04/2000 | US6083792 Manufacturing process of a split gate flash memory unit |
| 07/04/2000 | US6083784 Semiconductor device having MOS transistor |
| 07/04/2000 | US6083782 High performance GaAs field effect transistor structure |
| 07/04/2000 | US6083780 Semiconductor device and method of fabrication thereof |
| 07/04/2000 | US6083069 Method of making a micro vacuum tube with a molded emitter tip |
| 07/04/2000 | US6083068 Field emission device and method of fabricating the same |
| 06/29/2000 | WO2000038246A1 Junction-gate field-effect transistor with more highly doped connecting area |
| 06/29/2000 | WO2000038245A1 Dual pocket, two sided program/erase non-volatile memory cell |
| 06/29/2000 | WO2000038244A1 Field effect transistor arrangement with a trench gate electrode and an additional highly doped layer in the body region |
| 06/29/2000 | WO2000038243A1 Peripheral structure for monolithic power device |
| 06/29/2000 | WO2000038242A1 Power semiconductor element |
| 06/29/2000 | WO2000038240A1 Floating gate memory cell structure with programming mechanism outside the read path |
| 06/29/2000 | WO2000038237A1 A method of manufacturing a semiconductor device |
| 06/29/2000 | WO2000038235A1 Circuit assembly with at least one nanoelectronic component and method for producing the same |
| 06/29/2000 | WO2000038230A1 Windowed non-ceramic package having embedded frame |
| 06/29/2000 | WO2000038229A1 Method for producing cmos transistors and related devices |
| 06/29/2000 | WO2000038227A1 Method of making a semiconductor device including an asymmetrical field-effect transistor |
| 06/29/2000 | WO2000037911A1 Smart microsensor arrays with silicon-on-insulator readouts for damage control |
| 06/29/2000 | WO2000037910A1 Sensor |
| 06/29/2000 | WO1999065078A3 Semiconductor device |
| 06/29/2000 | DE19961800A1 New novolak epoxy resin, useful for sealing semiconductor components, has high content of binuclear compounds and low viscosity |
| 06/29/2000 | DE19932959A1 Semiconducting device has IGBT with gate formed by gate insulator on n-conducting semiconducting layer formed on p-conducting layer, thyristor remote from IGBT |