| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/18/2000 | US6091076 Quantum WELL MOS transistor and methods for making same |
| 07/18/2000 | US6090722 Doping; forming polymer |
| 07/18/2000 | US6090716 Method of fabricating a field effect transistor |
| 07/18/2000 | US6090693 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors |
| 07/18/2000 | US6090692 Fabrication method for semiconductor memory device |
| 07/18/2000 | US6090691 Method for forming a raised source and drain without using selective epitaxial growth |
| 07/18/2000 | US6090684 Method for manufacturing semiconductor device |
| 07/18/2000 | US6090676 Process for making high performance MOSFET with scaled gate electrode thickness |
| 07/18/2000 | US6090672 Ultra short channel damascene MOS transistors |
| 07/18/2000 | US6090671 Reduction of gate-induced drain leakage in semiconductor devices |
| 07/18/2000 | US6090670 Highly efficient transistor for fast programming of flash memories |
| 07/18/2000 | US6090669 Growing lightly doped n-type epitaxial layer on heavily doped n-type substrate, growing oxide on upper portion of epitaxial layer, masking and doping boron ions, etching oxide to expose regions for aluminum doping; masking, thermal diffusion |
| 07/18/2000 | US6090668 Method to fabricate sharp tip of poly in split gate flash |
| 07/18/2000 | US6090667 Method of manufacturing floating gate type transistor |
| 07/18/2000 | US6090666 Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal |
| 07/18/2000 | US6090665 Method of producing the source regions of a flash EEPROM memory cell array |
| 07/18/2000 | US6090658 Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer |
| 07/18/2000 | US6090654 Method for manufacturing a static random access memory cell |
| 07/18/2000 | US6090652 Method of manufacturing a semiconductor device including implanting threshold voltage adjustment ions |
| 07/18/2000 | US6090650 Method to reduce timing skews in I/O circuits and clock drivers caused by fabrication process tolerances |
| 07/18/2000 | US6090649 Heterojunction field effect transistor and method of fabricating the same |
| 07/18/2000 | US6090648 Provideing sapphire substrate with silicon layer; forming polysilicon layer over silicon layer; defining silicon island in first silicon layer; doping with desired conductivity determining material to form resistor region |
| 07/18/2000 | US6090647 Capacitor for a semiconductor device |
| 07/18/2000 | US6090646 Method for producing semiconductor device |
| 07/18/2000 | US6090638 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom |
| 07/18/2000 | US6090443 Multi-layer approach for optimizing ferroelectric film performance |
| 07/18/2000 | US6089093 Accelerometer and method for making same |
| 07/18/2000 | US6089089 Multi-element micro gyro |
| 07/13/2000 | WO2000041247A2 Quantum-size electronic devices and operating conditions thereof |
| 07/13/2000 | WO2000041246A1 Semiconductor system with trenches for separating doped areas |
| 07/13/2000 | WO2000041245A1 Quantum-size electronic devices and methods of operating thereof |
| 07/13/2000 | WO2000041244A1 Semiconductor energy detector |
| 07/13/2000 | WO2000041243A1 Field isolated integrated injection logic gate |
| 07/13/2000 | WO2000020916A3 Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
| 07/13/2000 | DE19859502A1 Sperrschicht-Feldeffekttransistor mit höher dotiertem Verbindungsgebiet JFET with higher doped junction region |
| 07/13/2000 | DE10000754A1 Semiconductor device with a multiple vertical p-n junction layer, e.g. a vertical MOSFET, IGBT, bipolar transistor or diode, is produced by ion implantation and heat treatment to form vertical drift zones or separation zones |
| 07/12/2000 | EP1018769A2 Semiconductor device with increased gate insulator lifetime |
| 07/12/2000 | EP1018758A1 Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
| 07/12/2000 | EP1018164A1 Silicon carbide static induction transistor structures |
| 07/12/2000 | EP1018163A1 Semiconductor component with a drift zone |
| 07/12/2000 | EP1018145A2 Microbellows actuator |
| 07/12/2000 | EP0809865B1 SEMICONDUCTOR FIELD EFFECT DEVICE COMPRISING A SiGe LAYER |
| 07/12/2000 | EP0800705B1 Manufacture of a semiconductor device with selectively deposited semiconductor zone |
| 07/12/2000 | EP0739538B1 Method of forming a resistor |
| 07/12/2000 | CN1260068A Latch-up free power mos-bipolar transistor |
| 07/12/2000 | CN1259763A Semiconductor elements and mfg. method therefor |
| 07/12/2000 | CN1054469C Method for forming semiconductor device |
| 07/11/2000 | USRE36777 Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer |
| 07/11/2000 | USRE36770 MOS-controlled high-power thyristor |
| 07/11/2000 | US6088604 Superconductor-normal conductor junction device |
| 07/11/2000 | US6088287 Flash memory architecture employing three layer metal interconnect for word line decoding |
| 07/11/2000 | US6088263 Non-volatile memory using substrate electrons |
| 07/11/2000 | US6088257 Ferroelectric random access memory device and method for operating the same |
| 07/11/2000 | US6088072 Liquid crystal display having a bus line formed of two metal layers and method of manufacturing the same |
| 07/11/2000 | US6088071 Auxiliary capacitor for a liquid crystal display device |
| 07/11/2000 | US6087893 Semiconductor integrated circuit having suppressed leakage currents |
| 07/11/2000 | US6087730 Electronic devices and their manufacture |
| 07/11/2000 | US6087727 Misfet semiconductor device having different vertical levels |
| 07/11/2000 | US6087721 Semiconductor device with a high-frequency bipolar transistor on an insulating substrate |
| 07/11/2000 | US6087708 Semiconductor integrated circuit device and a method of producing the same |
| 07/11/2000 | US6087706 Compact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench walls |
| 07/11/2000 | US6087704 Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer |
| 07/11/2000 | US6087702 Rare-earth schottky diode structure |
| 07/11/2000 | US6087701 Semiconductor device having a cavity and method of making |
| 07/11/2000 | US6087700 Gate having a barrier of titanium silicide |
| 07/11/2000 | US6087698 Semiconductor device and method of manufacturing the same |
| 07/11/2000 | US6087697 Radio frequency power MOSFET device having improved performance characteristics |
| 07/11/2000 | US6087696 Stacked tunneling dielectric technology for improving data retention of EEPROM cell |
| 07/11/2000 | US6087695 Source side injection flash EEPROM memory cell with dielectric pillar and operation |
| 07/11/2000 | US6087689 Memory cell having a reduced active area and a memory array incorporating the same |
| 07/11/2000 | US6087688 Field effect transistor |
| 07/11/2000 | US6087687 MISFET device with ferroelectric gate insulator |
| 07/11/2000 | US6087685 Solid-state imaging device |
| 07/11/2000 | US6087684 Bipolar transistor |
| 07/11/2000 | US6087683 Silicon germanium heterostructure bipolar transistor with indium doped base |
| 07/11/2000 | US6087679 Semiconductor thin film and semiconductor device |
| 07/11/2000 | US6087678 Thin-film transistor display devices having composite electrodes |
| 07/11/2000 | US6087675 Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film |
| 07/11/2000 | US6087648 Active matrix display device and method of manufacturing the same |
| 07/11/2000 | US6087647 Solid state imaging device and driving method therefor |
| 07/11/2000 | US6087580 Semiconductor having large volume fraction of intermediate range order material |
| 07/11/2000 | US6087276 Method of making a TFT having an ion plated silicon dioxide capping layer |
| 07/11/2000 | US6087272 Method of producing thin film transistor |
| 07/11/2000 | US6087268 Forming gate electrode of boron-doped polysilicon over gate oxide, isotropically forming a nitride over gate electrode at low temperature, anisotropically etching the nitride to leave a nitride sidewall spacer adjacent the gate electrode |
| 07/11/2000 | US6087256 Method for manufacturing modified T-shaped gate electrode |
| 07/11/2000 | US6087249 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation |
| 07/11/2000 | US6087248 Method of forming a transistor having thin doped semiconductor gate |
| 07/11/2000 | US6087246 Method for fabricating dual gate semiconductor device |
| 07/11/2000 | US6087245 Method of gettering crystallization catalyst for forming a silicon film |
| 07/11/2000 | US6087241 Method of forming side dielectrically isolated semiconductor devices and MOS semiconductor devices fabricated by this method |
| 07/11/2000 | US6087237 Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness |
| 07/11/2000 | US6087235 Method for effective fabrication of a field effect transistor with elevated drain and source contact structures |
| 07/11/2000 | US6087232 Forming drift region of second conductivity type in epitaxial layer of first conductivity type having silicon substrate; forming pad oxide, nitride pattern, field oxide, convex region, tapered top layer, tetraethoxy silane oxide pattern |
| 07/11/2000 | US6087231 Fabrication of dual gates of field transistors with prevention of reaction between the gate electrode and the gate dielectric with a high dielectric constant |
| 07/11/2000 | US6087230 Method of fabricating an SOI device having a channel with variable thickness |
| 07/11/2000 | US6087229 Composite semiconductor gate dielectrics |
| 07/11/2000 | US6087224 Manufacture of trench-gate semiconductor devices |
| 07/11/2000 | US6087223 Method of fabricating flash memory with dissymmetrical floating gate |
| 07/11/2000 | US6087219 Highly reliable flash memory structure with halo source |
| 07/11/2000 | US6087215 Method of fabricating a DRAM device |