| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/25/2000 | US6093628 Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application |
| 07/25/2000 | US6093620 Method of fabricating integrated circuits with oxidized isolation |
| 07/25/2000 | US6093612 Metal oxide silicon field effect transistor (MOSFET) and fabrication method of same |
| 07/25/2000 | US6093610 Self-aligned pocket process for deep sub-0.1 μm CMOS devices and the device |
| 07/25/2000 | US6093608 Source side injection programming and tip erasing P-channel split gate flash memory cell |
| 07/25/2000 | US6093607 Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash |
| 07/25/2000 | US6093605 Method of manufacturing a nonvolatile memory device having a program-assist plate |
| 07/25/2000 | US6093604 Method of manufacturing a flash memory device |
| 07/25/2000 | US6093603 Fabricating semiconductor memory devices with improved cell isolation |
| 07/25/2000 | US6093592 Method of manufacturing a semiconductor apparatus having a silicon-on-insulator structure |
| 07/25/2000 | US6093590 Method of fabricating transistor having a metal gate and a gate dielectric layer with a high dielectric constant |
| 07/25/2000 | US6093589 Methods for preventing gate oxide degradation |
| 07/25/2000 | US6093588 Process for fabricating a high voltage MOSFET |
| 07/25/2000 | US6093587 Removing part of an amorphous silicon film formed on a substrate having an insulating surface to form a region for introducing metal elements that promote crystallization of silicon, introducing metal, conducting heat treatment |
| 07/25/2000 | US6093586 Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor |
| 07/25/2000 | US6093576 Semiconductor sensor and manufacturing method thereof |
| 07/25/2000 | US6093243 Semiconductor device and its fabricating method |
| 07/25/2000 | US6093242 Anisotropy-based crystalline oxide-on-semiconductor material |
| 07/20/2000 | WO2000042668A1 Semiconducting polymer field effect transistor |
| 07/20/2000 | WO2000042667A1 A semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and a method of manufacture thereof |
| 07/20/2000 | WO2000042665A1 Power mos element and method for producing the same |
| 07/20/2000 | WO2000042662A1 Power semiconductor structural part with a mesa edge |
| 07/20/2000 | WO2000042661A1 Edge termination for a semiconductor component, schottky diode with an end termination and method for producing a schottky diode |
| 07/20/2000 | WO2000042660A1 Ferroelectric memory with ferroelectric thin film and method of fabrication |
| 07/20/2000 | WO2000042651A1 Semiconductor device |
| 07/20/2000 | WO2000042647A1 Mos transistor and method for making same on a semiconductor substrate |
| 07/20/2000 | WO2000041892A1 Thermal transfer element for forming multilayer devices |
| 07/20/2000 | WO2000041459A2 Semiconductor element with a tungsten oxide layer and method for its production |
| 07/20/2000 | WO2000024040A3 Conductive isostructural compounds |
| 07/20/2000 | WO2000019510A3 Elevated channel mosfet |
| 07/20/2000 | DE19963674A1 Oxynitride gate dielectric, especially for a semiconductor memory device, produced by silicon substrate reaction or CVD to form an oxynitride layer and back-oxidation to form an intermediate silicon dioxide layer |
| 07/20/2000 | DE19900648A1 Power metal oxide semiconductor field effect transistor (MOSFET) |
| 07/20/2000 | DE10001361A1 Inertial microsensor, e.g. an acceleration sensor or gyroscope, is produced by thinning a thick silicon layer bonded to a glass substrate, forming the sensor structure and etching the glass to form a vacuum space below the structure |
| 07/20/2000 | DE10000624A1 Double gate MOST production suppresses n-MOS dopant depletion and p-MOS boron penetration and minimizes outwards diffusion of injected gate electrode impurities |
| 07/19/2000 | EP1020926A2 Split gate memory cell |
| 07/19/2000 | EP1020925A2 Semiconductor storage device and method of driving the same |
| 07/19/2000 | EP1020924A2 A semiconductor component for transient voltage limiting |
| 07/19/2000 | EP1020923A2 Vertical bipolar transistor and method of manufacturing the same |
| 07/19/2000 | EP1020922A2 Insulated gate field effect transistor and method of manufacture thereof |
| 07/19/2000 | EP1020921A2 Analog MOSFET devices |
| 07/19/2000 | EP1020920A2 Semiconductor device having a driver TFT and a pixel TFT on a common substrate and manufacturing method thereof |
| 07/19/2000 | EP1020917A2 Semiconductor device and a process for producing same |
| 07/19/2000 | EP1020902A2 Method of fabricating a split gate memory cell |
| 07/19/2000 | EP1020900A2 Semiconductor device and method for fabricating the same |
| 07/19/2000 | EP1020899A2 TFT with large-grain polycrystalline active layer |
| 07/19/2000 | EP1020898A2 Semiconductor crystal, fabrication method thereof, and semiconductor device |
| 07/19/2000 | EP1020896A1 Integrated circuit device with composite oxide dielectric |
| 07/19/2000 | EP1019968A2 Diode device having a low threshold voltage |
| 07/19/2000 | EP1019967A1 Semiconductor power component with enhanced latch-up resistance |
| 07/19/2000 | EP1019966A4 Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
| 07/19/2000 | EP1019966A1 Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
| 07/19/2000 | EP1019965A1 Field-effect transistor with high packing density and method for the production thereof |
| 07/19/2000 | EP1019914A1 Nand-type floating gate memory device with dual source side select transistors and programming method |
| 07/19/2000 | EP1019733A1 Micro-mechanical semiconductor accelerometer |
| 07/19/2000 | CN1260906A Substrate for high frequency integrated circuit |
| 07/19/2000 | CN1260600A Silicon-base dual potential barrier structure tunnel tuminous diode and its manufacture method |
| 07/19/2000 | CN1260597A Insulator-base silicon thick-oxide structure and mfg. method thereof |
| 07/19/2000 | CN1260596A Linked-grid transistor |
| 07/19/2000 | CN1260595A Semiconductor device and method for producing same |
| 07/19/2000 | CN1260594A Semiconductor crystal, its producing method and semiconductor device |
| 07/19/2000 | CN1260593A Non-volatile semiconductor memory |
| 07/19/2000 | CN1260592A Semiconductor device and mfg. method thereof |
| 07/19/2000 | CN1260590A Semiconductor device, semiconductor crystal wafer, semiconductor assembly and mfg. method for semiconductor device |
| 07/19/2000 | CN1260585A Method for manufacturing semiconductor device |
| 07/19/2000 | CN1260362A Epoxy resin and resin sealed semiconductor device |
| 07/19/2000 | CN1054703C Static induction device |
| 07/18/2000 | US6091657 Integrated circuit having protection of low voltage devices |
| 07/18/2000 | US6091647 Semiconductor memory device including an SOI substrate |
| 07/18/2000 | US6091644 Structure of a channel write/erase flash memory cell |
| 07/18/2000 | US6091642 Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices |
| 07/18/2000 | US6091635 Electron injection method for substrate-hot-electron program and erase VT tightening for ETOX cell |
| 07/18/2000 | US6091634 Compact nonvolatile memory using substrate hot carrier injection |
| 07/18/2000 | US6091632 Nonvolatile semiconductor storage device having a plurality of blocks of memory cell transistors formed on respective wells isolated from each other |
| 07/18/2000 | US6091473 Active matrix liquid crystal display |
| 07/18/2000 | US6091466 Liquid crystal display with dummy drain electrode and method of manufacturing same |
| 07/18/2000 | US6091464 Method for manufacturing liquid crystal display capable of preventing electrical shorts between neighboring pixel electrodes and the liquid crystal display |
| 07/18/2000 | US6091152 Semiconductor device and method for fabricating the same |
| 07/18/2000 | US6091130 Semiconductor device having structure suitable for CMP process |
| 07/18/2000 | US6091123 Self-aligned SOI device with body contact and NiSi2 gate |
| 07/18/2000 | US6091122 Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics |
| 07/18/2000 | US6091121 Semiconductor device and method for manufacturing the same |
| 07/18/2000 | US6091120 Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers |
| 07/18/2000 | US6091118 Semiconductor device having reduced overlap capacitance and method of manufacture thereof |
| 07/18/2000 | US6091117 Field effect transistor having elevated source and drain regions and methods of manufacturing the same |
| 07/18/2000 | US6091115 Semiconductor device including a crystalline silicon film |
| 07/18/2000 | US6091113 Semiconductor device with evaluation MISFET |
| 07/18/2000 | US6091111 High voltage mos device having an extended drain region with different dopant species |
| 07/18/2000 | US6091110 MOSFET device having recessed gate-drain shield and method |
| 07/18/2000 | US6091109 Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region |
| 07/18/2000 | US6091108 Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage |
| 07/18/2000 | US6091107 Semiconductor devices |
| 07/18/2000 | US6091106 Low voltage transistor structure having a grooved gate |
| 07/18/2000 | US6091105 Method of making a self-aligned dopant enhanced RTA MOSFET |
| 07/18/2000 | US6091104 Flash memory cell with self-aligned gates and fabrication process |
| 07/18/2000 | US6091101 Multi-level flash memory using triple well |
| 07/18/2000 | US6091099 Semiconductor device with tantalum and ruthenium |
| 07/18/2000 | US6091097 Semiconductor device and a method of manufacturing the same |
| 07/18/2000 | US6091087 Insulated gate thyristor |
| 07/18/2000 | US6091086 Reverse blocking IGBT |
| 07/18/2000 | US6091077 MIS SOI semiconductor device with RTD and/or HET |