| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/02/2000 | EP1023607A2 Multi-element micro gyro |
| 08/02/2000 | EP0866972B1 Accelerometer and method for making same |
| 08/02/2000 | EP0454051B1 Program element for use in redundancy technique for semiconductor memory device, and method of fabricating a semiconductor memory device having the same |
| 08/02/2000 | CN1261984A Bipolar power transistor and manufacturing method |
| 08/02/2000 | CN1261727A Semiconductor device and its producing method |
| 08/02/2000 | CN1261726A Oxide of nitrogen grid medium and its making method |
| 08/01/2000 | US6098187 Method for selecting operation cycles of a semiconductor IC for performing an IDDQ test by using a logical simulation and a fault simulation |
| 08/01/2000 | US6097666 Nonvolatile semiconductor memory device whose addresses are selected in a multiple access |
| 08/01/2000 | US6097622 Ferroelectric memory used for the RFID system, method for driving the same, semiconductor chip and ID card |
| 08/01/2000 | US6097453 Display apparatus and fabrication process thereof |
| 08/01/2000 | US6097452 Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching |
| 08/01/2000 | US6097247 Low threshold voltage diode-connected FET |
| 08/01/2000 | US6097113 MOS integrated circuit device operating with low power consumption |
| 08/01/2000 | US6097097 Semiconductor device face-down bonded with pillars |
| 08/01/2000 | US6097093 Structure of a dual damascene |
| 08/01/2000 | US6097077 Programmable interconnect structures and programmable integrated circuits |
| 08/01/2000 | US6097073 Triangular semiconductor or gate |
| 08/01/2000 | US6097072 Trench isolation with suppressed parasitic edge transistors |
| 08/01/2000 | US6097070 MOSFET structure and process for low gate induced drain leakage (GILD) |
| 08/01/2000 | US6097069 Method and structure for increasing the threshold voltage of a corner device |
| 08/01/2000 | US6097064 Semiconductor device and manufacturing method thereof |
| 08/01/2000 | US6097063 Semiconductor device having a plurality of parallel drift regions |
| 08/01/2000 | US6097062 Optimized trench edge formation integrated with high quality gate formation |
| 08/01/2000 | US6097061 Trenched gate metal oxide semiconductor device and method |
| 08/01/2000 | US6097060 Insulated gate semiconductor device |
| 08/01/2000 | US6097059 Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory |
| 08/01/2000 | US6097058 Ferroelectric memory device and a method of manufacturing thereof |
| 08/01/2000 | US6097051 Semiconductor device and method of fabricating |
| 08/01/2000 | US6097047 Ferroelectric semiconductor device, and ferroelectric semiconductor substrate |
| 08/01/2000 | US6097046 Vertical field effect transistor and diode |
| 08/01/2000 | US6097044 Charge transfer device and method for manufacturing the same |
| 08/01/2000 | US6097039 Silicon carbide semiconductor configuration with a high degree of channel mobility |
| 08/01/2000 | US6097036 Semiconductor logic element and apparatus using thereof |
| 08/01/2000 | US6096646 Method for forming metal line of semiconductor device |
| 08/01/2000 | US6096641 Method of manufacturing semiconductor device |
| 08/01/2000 | US6096640 Method of making a gate electrode stack with a diffusion barrier |
| 08/01/2000 | US6096628 Method of controlling effective channel length of semiconductor device by non-doping implantation at elevated energies |
| 08/01/2000 | US6096627 Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC |
| 08/01/2000 | US6096619 Method of manufacturing a semiconductor device comprising a capacitor with an intrinsic polysilicon electrode |
| 08/01/2000 | US6096616 Fabrication of a non-ldd graded p-channel mosfet |
| 08/01/2000 | US6096615 Method of forming a semiconductor device having narrow gate electrode |
| 08/01/2000 | US6096614 Method to fabricate deep sub-μm CMOSFETS |
| 08/01/2000 | US6096612 Increased effective transistor width using double sidewall spacers |
| 08/01/2000 | US6096610 Transistor suitable for high voltage circuit |
| 08/01/2000 | US6096609 ESD protection circuit and method for fabricating same using a plurality of dummy gate electrodes as a salicide mask for a drain |
| 08/01/2000 | US6096608 Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
| 08/01/2000 | US6096607 Method for manufacturing silicon carbide semiconductor device |
| 08/01/2000 | US6096606 Method of making a semiconductor device |
| 08/01/2000 | US6096590 Scalable MOS field effect transistor |
| 08/01/2000 | US6096589 Low and high voltage CMOS devices and process for fabricating same |
| 08/01/2000 | US6096588 Method of making transistor with selectively doped channel region for threshold voltage control |
| 08/01/2000 | US6096587 Manufacturing method of a junction field effect transistor |
| 08/01/2000 | US6096586 MOS device with self-compensating VaT -implants |
| 08/01/2000 | US6096585 Method of manufacturing thin film transistor |
| 08/01/2000 | US6096584 Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region |
| 08/01/2000 | US6096583 Semiconductor device and manufacturing method thereof |
| 08/01/2000 | US6096582 Method of making a semiconductor device |
| 08/01/2000 | US6096581 Method for operating an active matrix display device with limited variation in threshold voltages |
| 08/01/2000 | US6096572 Forming an electrically conductive protection layer on metal layer to prevent oxidation of metal layer |
| 08/01/2000 | US6096570 Field emitter having sharp tip |
| 08/01/2000 | US6096434 The conductive oxide thin film is an epitaxial film composed of strontium ruthenate formed on silicon substrate |
| 08/01/2000 | CA2014296C Integrated circuit |
| 07/27/2000 | WO2000044031A2 Power transistor arrangement exhibiting a high level of electric strength |
| 07/27/2000 | WO2000043573A1 Passivating etchants for metallic particles |
| 07/27/2000 | DE19901210A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 07/27/2000 | DE19856082C1 Verfahren zum Strukturieren einer metallhaltigen Schicht A method for patterning a metal-containing layer |
| 07/26/2000 | EP1022843A2 High power rectifier |
| 07/26/2000 | EP1022825A1 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
| 07/26/2000 | EP1022786A2 Semiconductor device and process for production thereof |
| 07/26/2000 | EP1022785A1 Electronic semiconductor power device with integrated diode |
| 07/26/2000 | EP1022784A2 SRAM cell and its fabrication process |
| 07/26/2000 | EP1022780A2 Method of forming a flash memory cell |
| 07/26/2000 | EP1022746A2 Method of operating a two-transistor flash memory cell |
| 07/26/2000 | EP1022745A2 Flash memory cell array |
| 07/26/2000 | EP1021837A1 Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device |
| 07/26/2000 | EP1021836A1 An improved silicon carbide gate turn-off thyristor arrangement |
| 07/26/2000 | EP1021835A1 Bipolar power transistors and manufacturing method |
| 07/26/2000 | EP1021829A1 Cmos processing employing removable sidewall spacers for independently optimized n- and p-channel transistor performance |
| 07/26/2000 | EP1021828A2 A process for manufacturing ic-components to be used at radio frequencies |
| 07/26/2000 | EP0721664B1 Structure and method of making a capacitor for an integrated circuit |
| 07/26/2000 | EP0689720B1 A technique for making memory cells in a way which suppresses electrically conductive stringers |
| 07/26/2000 | CN1261207A Static RAM unit and manufacture thereof |
| 07/26/2000 | CN1054943C A method for manufacturing a semiconductor device |
| 07/26/2000 | CN1054942C Semiconductor device and method of manufacturing the same |
| 07/25/2000 | US6094369 Ferroelectric nonvolatile memory element having capacitors of same dielectric constant and method thereof |
| 07/25/2000 | US6094248 Circuit array substrate for a display device and a method of making the same |
| 07/25/2000 | US6094072 Methods and apparatus for bipolar elimination in silicon-on-insulator (SOI) domino circuits |
| 07/25/2000 | US6093965 Gallium nitride-based III-V group compound semiconductor |
| 07/25/2000 | US6093955 Power semiconductor device |
| 07/25/2000 | US6093952 Higher power gallium nitride schottky rectifier |
| 07/25/2000 | US6093951 MOS devices with retrograde pocket regions |
| 07/25/2000 | US6093949 MOS transistor |
| 07/25/2000 | US6093948 MOS transistors having vertical current flow |
| 07/25/2000 | US6093947 Recessed-gate MOSFET with out-diffused source/drain extension |
| 07/25/2000 | US6093946 EEPROM cell with field-edgeless tunnel window using shallow trench isolation process |
| 07/25/2000 | US6093945 Split gate flash memory with minimum over-erase problem |
| 07/25/2000 | US6093937 Semiconductor thin film, semiconductor device and manufacturing method thereof |
| 07/25/2000 | US6093935 Transistor and method for manufacturing the same |
| 07/25/2000 | US6093934 Thin film transistor having grain boundaries with segregated oxygen and halogen elements |
| 07/25/2000 | US6093660 Inductively coupled plasma chemical vapor deposition technology |