Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2000
08/22/2000US6105427 Micro-mechanical semiconductor accelerometer
08/17/2000WO2000048252A2 Electrostatic discharge protection of integrated circuits
08/17/2000WO2000048251A1 Methods for packaging integrated circuit devices including cavities adjacent active regions and related structures
08/17/2000WO2000048248A1 Semiconductor device with deep substrate contacts
08/17/2000WO2000048240A1 Process for forming thin dielectric layers in semiconductor devices
08/17/2000WO2000014806A9 Vertical bipolar transistor and method for the production thereof
08/17/2000DE10005804A1 Production of a semiconductor device comprises using a gas plasma during the formation of the trench and protective film and etching of the base of the trench
08/17/2000DE10005536A1 Pressure detector consisting of sensor and integrated circuitry for use in control systems
08/17/2000CA2362428A1 Electrostatic discharge protection of integrated circuits
08/17/2000CA2356868A1 Semiconductor device with deep substrate contacts
08/16/2000EP1028473A2 Trench MOS-gated device manufactured with few masks
08/16/2000EP1028472A2 Coulomb-blockade element and method of manufacturing the same
08/16/2000EP1028469A2 Semiconductor device and method of manufacturing the same
08/16/2000EP1028458A2 Chemical vapor deposition of silicate high dielectric constant materials
08/16/2000EP1027735A1 Silicon carbide junction field effect transistor
08/16/2000EP1027734A1 An electrically erasable programmable split-gate memory cell
08/16/2000EP1027733A1 Bipolar power transistor and manufacturing method
08/16/2000EP1027725A2 Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby
08/16/2000EP1027723A2 Method of forming an electronic device
08/16/2000EP0956597A4 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
08/16/2000EP0645052B1 Silicon carbide power mosfet with floating field ring and floating field plate
08/16/2000CN1263637A A process for manufacturing IC-components to be used at radio frequencies
08/16/2000CN1263360A Insulated gate transistor
08/16/2000CN1263357A Semiconductor device and its production method
08/16/2000CN1263356A Method for forming frame-grid structure without boundary and device formed by using said method
08/16/2000CN1263355A Method for making thin-grid silicon oxide layer
08/16/2000CN1055569C 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
08/16/2000CN1055568C Nonvolatile semiconductor memory storage
08/16/2000CN1055427C Fastener driving tool insert
08/15/2000USRE36818 Insulated gate semiconductor device with stripe widths
08/15/2000US6104639 Memory cell with stored charge on its gate and process for the manufacture thereof
08/15/2000US6104636 Semiconductor memory which can store two or more bits of data in each memory cell
08/15/2000US6104461 Liquid crystal display device for preventing short circuits and method of manufacturing the same
08/15/2000US6104324 Coding/decoding method for reproducing data in high density and reproducing data, and apparatus therefor
08/15/2000US6104277 Polysilicon defined diffused resistor
08/15/2000US6104081 Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer
08/15/2000US6104079 Closely pitched polysilicon fuses and method of forming the same
08/15/2000US6104077 Semiconductor device having gate electrode with a sidewall air gap
08/15/2000US6104073 Semiconductor integrated capacitive acceleration sensor and relative fabrication method
08/15/2000US6104072 Analogue MISFET with threshold voltage adjuster
08/15/2000US6104070 Semiconductor device with reduced number of through holes and method of manufacturing the same
08/15/2000US6104069 Semiconductor device having an elevated active region formed in an oxide trench
08/15/2000US6104068 Structure and method for improved signal processing
08/15/2000US6104067 Semiconductor device
08/15/2000US6104065 Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure
08/15/2000US6104064 Asymmetrical transistor structure
08/15/2000US6104063 Multiple spacer formation/removal technique for forming a graded junction
08/15/2000US6104062 Semiconductor device having reduced effective substrate resistivity and associated methods
08/15/2000US6104060 Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate
08/15/2000US6104059 Non-volatile memory having a silicide film on memory control gates and peripheral circuit transistor gates
08/15/2000US6104058 Method for improving the intermediate dielectric profile, particularly for non-volatile memories
08/15/2000US6104057 Electrically alterable non-volatile semiconductor memory device
08/15/2000US6104056 Semiconductor element and semiconductor memory device using the same
08/15/2000US6104049 Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
08/15/2000US6104044 Semiconductor compound electrode material containing calcium and a noble metal
08/15/2000US6104043 Schottky diode of SiC and a method for production thereof
08/15/2000US6104042 Thin film transistor with a multi-metal structure a method of manufacturing the same
08/15/2000US6104041 Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors
08/15/2000US6104040 Liquid crystal display having a transistor with doped region in an active semiconductor layer
08/15/2000US6104039 P-type nitrogen compound semiconductor and method of manufacturing same
08/15/2000US6103609 Method for fabricating semiconductor device
08/15/2000US6103607 Manufacture of MOSFET devices
08/15/2000US6103603 Multi-step dry-etching method that sequentially uses plasma etching and reactive ion etching process steps to form the pairs of adjacent, dopes polysilicon gate electrodes without over-etching the dielectric film
08/15/2000US6103600 Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method
08/15/2000US6103584 Uniform current density and high current gain bipolar transistor
08/15/2000US6103583 Method for producing quantization functional device
08/15/2000US6103580 Forming metal-oxide-semiconductor field effect transistor (mosfet) for miniaturized random access memory using a doped silicate glass layer to source ions for the counter-doped ultra-shallow channel of the mosfet
08/15/2000US6103578 Method for forming high breakdown semiconductor device
08/15/2000US6103576 Dielectric layer of a memory cell having a stacked oxide sidewall and method of fabricating same
08/15/2000US6103575 Method of forming a single poly cylindrical flash memory cell having high coupling ratio
08/15/2000US6103574 Method of manufacturing non-volatile semiconductor memory device having reduced electrical resistance of a source diffusion layer
08/15/2000US6103573 Processing techniques for making a dual floating gate EEPROM cell array
08/15/2000US6103564 Method for forming a diode in a surface layer of an SOI substrate
08/15/2000US6103562 Method of making semiconductor device with decreased channel width and constant threshold voltage
08/15/2000US6103561 Depletion mode MOS capacitor with patterned VT implants
08/15/2000US6103559 Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication
08/15/2000US6103558 Process for producing electrooptical apparatus and process for producing driving substrate for electrooptical apparatus
08/15/2000US6103557 Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method
08/15/2000US6103556 Thin-film transistor and method of manufacturing the same
08/15/2000US6103399 Method for the manufacturing of micromachined structures and a micromachined structure manufactured using such method
08/15/2000US6103137 Method for etching oxide film in plasma etching system
08/15/2000US6103008 Silicon-integrated thin-film structure for electro-optic applications
08/15/2000US6101883 Semiconductor pressure sensor including a resistive element which compensates for the effects of temperature on a reference voltage and a pressure sensor
08/15/2000CA2236993C Hybrid circuit construction of push-pull power amplifier
08/10/2000WO2000046859A1 High-voltage transistor with multi-layer conduction region
08/10/2000WO2000046858A1 Mos transistor with dynamic threshold voltage equipped with a current limiting device and method for making same
08/10/2000WO2000046857A1 Two transistor eeprom cell
08/10/2000WO2000046851A1 Method of making a high-voltage transistor with multiple lateral conduction layers
08/10/2000WO2000046850A1 A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR
08/10/2000WO2000046321A1 Fluorene copolymers and devices made therefrom
08/10/2000WO2000024060A3 Semiconductor switches with evenly distributed fine control structures
08/10/2000WO2000014791A9 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
08/10/2000WO2000013205A3 Sensor for measuring a magnetic field
08/10/2000DE19904390A1 Diamond-like carbon structure, used as gate-cathode connection for a gate turn-off thyristor or gate commutated thyristor is produced on a semiconductor substrate by removing layer portions not covered by photosensitive mask
08/10/2000DE19904103A1 Insulated gate bipolar transistor with improved on-state voltage
08/10/2000DE19903598A1 Halbleitervorrichtung mit Mehrfachdielektrikum A semiconductor device comprising Mehrfachdielektrikum
08/10/2000DE10004548A1 Trench bipolar transistor with insulated gate (IGBT) in which the MOS structure metal film is formed in trench of substrate surface section
08/10/2000DE10004200A1 MOS transistor is designed such that resistance in the ON state is identical to that in specific electrode connecting supply voltage to source electrode, resulting in constant output impedance, despite manufacturing defects
08/10/2000CA2360644A1 Fluorene copolymers and devices made therefrom
08/09/2000EP1026754A1 Diode
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