Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2000
09/05/2000US6115285 Device and method for multi-level charge/storage and reading out
09/05/2000US6115233 Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
09/05/2000US6115097 Liquid crystal device with light blocking sealing member and light blocking electrode over two interlayer insulating films
09/05/2000US6115094 Reflection type display device and electronic device
09/05/2000US6115090 Display device
09/05/2000US6114767 EEPROM semiconductor device and method of fabricating the same
09/05/2000US6114765 Titanium silicide film which has a high heat resistance and a low sheet resistance comprising a titanium silicide film containing a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution
09/05/2000US6114764 Insulating layer on semiconductor body; titanium nitride barrier metal layer on insulating layer; aluminum based alloy having crystallographic axis inclined by an angle of 0 to 5 degrees with respect to a normal of the barrier metal layer
09/05/2000US6114762 Atomic wire and atomic wire switch
09/05/2000US6114746 Vertical PNP transistor and relative fabrication method
09/05/2000US6114745 Bipolar transistor having high emitter efficiency
09/05/2000US6114744 Semiconductor integration device and fabrication method of the same
09/05/2000US6114743 Well isolation bipolar transistor
09/05/2000US6114742 Semiconductor device including crystal defect
09/05/2000US6114736 Prevent migration of dopant atoms from polysilicon(ps) layer into the tungsten silicide(wsi) layer in post gate conductor (gc) heat cycles; gate electrode of: doped ps layer on gate oxide layer; tungsten-nitride dopant barrier layer; wsi layer
09/05/2000US6114735 Conductive gate region comprises a conductive metal nitride layer having laterally opposing dielectric nitride containing regions thereagainst which are thicker than the conductive metal nitride layer
09/05/2000US6114734 Transistor structure incorporating a solid deuterium source for gate interface passivation
09/05/2000US6114732 Field effect transistor
09/05/2000US6114730 Semiconductor device and its manufacturing method
09/05/2000US6114728 MIS semiconductor device having a tapered top gate and a capacitor with metal oxide dielectric material
09/05/2000US6114727 Semiconductor device
09/05/2000US6114726 Low voltage MOSFET
09/05/2000US6114725 Structure for folded architecture pillar memory cell
09/05/2000US6114723 Flash memory cell using poly to poly tunneling for erase
09/05/2000US6114722 Microcrystalline silicon structure and fabrication process
09/05/2000US6114718 Solid state image sensor and its fabrication
09/05/2000US6114717 Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section
09/05/2000US6114620 Pre-equilibrium chemical reaction energy converter
09/05/2000US6114258 Integrated circuits
09/05/2000US6114244 Forming a barrier metal in the hole and on said semiconductor substrate having an oxide film on a surface
09/05/2000US6114230 Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates
09/05/2000US6114228 Method of making a semiconductor device with a composite gate dielectric layer and gate barrier layer
09/05/2000US6114223 Gettering regions and methods of forming gettering regions within a semiconductor wafer
09/05/2000US6114221 Method and apparatus for interconnecting multiple circuit chips
09/05/2000US6114212 Methods of fabricating bipolar junction transistors having an increased safe operating area
09/05/2000US6114211 Semiconductor device with vertical halo region and methods of manufacture
09/05/2000US6114210 Method of forming semiconductor device comprising a drain region with a graded N-LDD junction with increased HCI lifetime
09/05/2000US6114209 Method of fabricating semiconductor devices with raised doped region structures
09/05/2000US6114207 Method of producing a semiconductor device
09/05/2000US6114205 Epitaxial channel vertical MOS transistor
09/05/2000US6114203 Method of manufacturing a MOS integrated circuit having components with different dielectrics
09/05/2000US6114199 Manufacturing method for ferroelectric film and nonvolatile memory using the same
09/05/2000US6114197 Manufacture of an integrated circuit that incorporates electrostatic discharge protection
09/05/2000US6114196 Method of fabricating metal-oxide semiconductor transistor
09/05/2000US6114195 Manufacturing method of compound semiconductor field effect transistor
09/05/2000US6114194 Method for fabricating a field device transistor
09/05/2000US6114193 Method for preventing the snap down effect in power rectifier with higher breakdown voltage
09/05/2000US6114184 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode
09/05/2000US6114088 Thermal transfer element for forming multilayer devices
09/05/2000US6114038 Functionalized nanocrystals and their use in detection systems
09/05/2000US6113721 Method of bonding a semiconductor wafer
09/05/2000CA2027528C Integrated circuit
08/2000
08/31/2000WO2000051193A2 Rectifier of thermaly moving electrons and method for converting thermal energy into electric energy by using the same
08/31/2000WO2000051188A1 Flash memory cell with self-aligned gates and fabrication process
08/31/2000WO2000051187A1 Method for regulating the breakdown voltage of a thyristor
08/31/2000WO2000051186A1 Nanostructure device and apparatus
08/31/2000WO2000051175A1 Method for fabricating ferroelectric field effect transistor
08/31/2000WO2000051167A2 Monolithically integrated trench mosfet and schottky diode
08/31/2000WO2000051165A2 Misfet with narrow bandgap source
08/30/2000EP1032048A1 Insulated-gate semiconductor element and method for manufacturing the same
08/30/2000EP1032047A2 Semiconductor device and power converter using the same
08/30/2000EP1032046A1 Semiconductor device having a thin film field-shaping structure
08/30/2000EP1032033A2 Method of forming dual metal gate structures for CMOS devices
08/30/2000EP1032031A2 Electronic power device monolithically integrated on a semiconductor and comprising edge protection structures having a limited planar dimension
08/30/2000EP1032028A2 Improved semiconductor trench MOS device
08/30/2000EP1032027A2 Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
08/30/2000EP1031992A2 Flash EEPROM system
08/30/2000EP1031873A2 Semiconductor device and fabrication method thereof
08/30/2000EP0843897B1 Monolithically integrated planar semi-conductor arrangement with temperature compensation
08/30/2000EP0836749B1 Thyristor with a layer of charge carriers having a reduced lifetime
08/30/2000EP0783766B1 Power semiconductor devices
08/30/2000EP0750793B1 Silicon controlled rectifier for esd protection
08/30/2000EP0706716B1 Transistors and methods for fabrication thereof
08/30/2000EP0462270B1 Method of using a semiconductor device comprising a substrate having a dielectrically isolated semiconductor island
08/30/2000CN1265227A Semiconductor structure with silicon carbide material base, with several electrically different sub-regions
08/30/2000CN1265225A Integrated circuit, components thereof and mfg. method
08/30/2000CN1264921A Method and device for arranging test in measuring dynamic logic circuit
08/29/2000USRE36836 Semiconductor device for driving a light valve
08/29/2000US6111778 Body contacted dynamic memory
08/29/2000US6111619 Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
08/29/2000US6111557 Display device and method of driving display device
08/29/2000US6111423 Method and apparatus for measuring pinch-off voltage of a field effect transistor
08/29/2000US6111325 Gettering regions and methods of forming gettering regions within a semiconductor wafer
08/29/2000US6111304 Semiconductor diffused resistor and method for manufacturing the same
08/29/2000US6111298 Etch stop layer formed within a multi-layered gate conductor to provide for reduction of channel length
08/29/2000US6111297 MOS-technology power device integrated structure and manufacturing process thereof
08/29/2000US6111296 MOSFET with plural channels for punch through and threshold voltage control
08/29/2000US6111293 Silicon-on-insulator MOS structure
08/29/2000US6111291 MOS transistor with high voltage sustaining capability
08/29/2000US6111290 Semiconductor device having high breakdown voltage and method of manufacturing the same
08/29/2000US6111289 Semiconductor device
08/29/2000US6111288 Quantum tunneling effect device and semiconductor composite substrate
08/29/2000US6111287 Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same
08/29/2000US6111286 Low voltage low power n-channel flash memory cell using gate induced drain leakage current
08/29/2000US6111281 Solid-state image-pickup device and MOS transistor having a reduced incidental capacitance
08/29/2000US6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up
08/29/2000US6111273 Semiconductor device and its manufacturing method
08/29/2000US6111267 First silicon layer, stressed silicon germanium layer and the second silicon layer are grown by selective epitaxy; ensures that the stressed layer grows without any defects in the active regions
08/29/2000US6111184 Interchangeable pickup, electric stringed instrument and system for an electric stringed musical instrument
08/29/2000US6110842 Method of forming multiple gate oxide thicknesses using high density plasma nitridation
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