Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2000
09/14/2000WO2000054313A1 Method for producing thin film semiconductor device
09/14/2000WO2000054312A1 Ic-compatible parylene mems technology and its application in integrated sensors
09/14/2000DE19909105A1 Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür Balanced thyristor with reduced thickness and manufacturing method thereof
09/14/2000DE10006257A1 Field effect transistor has a channel layer containing a semiconducting inorganic-organic hybrid material between source and drain regions, a gate region and an electrically insulating layer
09/13/2000EP1035590A2 Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory
09/13/2000EP1035589A2 Iridium composite barrier structure and method for same
09/13/2000EP1035588A2 Iridium conductive electrode/barrier structure and method for same
09/13/2000EP1035582A2 Semiconductor device and method of manufacturing the same
09/13/2000EP1035575A2 Semiconductor device
09/13/2000EP1035571A1 Method of manufacturing a bipolar transistor
09/13/2000EP1035567A2 A process for fabricating a device with shallow junctions
09/13/2000EP1035565A2 Method of manufacturing semiconductor device including high-temperature heat treatment
09/13/2000EP1034942A1 Semiconductor device and method of manufacturing the same
09/13/2000EP1034569A2 IN x?Ga 1-x?P STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR
09/13/2000EP1034568A1 Field effect transistor
09/13/2000EP1034567A1 Single electron devices
09/13/2000EP1034565A1 Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure
09/13/2000EP1034564A1 Process for fabricating semiconductor device including antireflective etch stop layer
09/13/2000EP1034487A1 Method and system for improving a transistor model
09/13/2000CN1266536A Carbon film for field emission device
09/13/2000CN1266287A Thin film transistor using organic and inorganic hybridized material as semiconductive channel
09/13/2000CN1266282A Method for making semiconductor device
09/13/2000CN1266280A Method containing high-temp heat treatment for making semiconductor device
09/13/2000CN1266277A Method for forming bimetallic grid structure of CMOS device
09/13/2000CN1266276A Semiconductor device
09/12/2000US6118696 Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same
09/12/2000US6118691 Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read
09/12/2000US6118686 Memory device
09/12/2000US6118506 Electro-optical device and method of fabricating same
09/12/2000US6118172 High-frequency circuit device and manufacturing method thereof
09/12/2000US6118171 Semiconductor device having a pedestal structure and method of making
09/12/2000US6118164 Transducer having a resonating silicon beam and method for forming same
09/12/2000US6118161 Self-aligned trenched-channel lateral-current-flow transistor
09/12/2000US6118157 High voltage split gate CMOS transistors built in standard 2-poly core CMOS
09/12/2000US6118154 Input/output protection circuit having an SOI structure
09/12/2000US6118152 Semiconductor device and method of manufacturing the same
09/12/2000US6118151 Thin film semiconductor device, method for fabricating the same and semiconductor device
09/12/2000US6118150 Insulated gate semiconductor device and method of manufacturing the same
09/12/2000US6118149 Trench gate MOSFET
09/12/2000US6118148 Semiconductor device and manufacturing method thereof
09/12/2000US6118141 Emitter-switched thyristor
09/12/2000US6118140 Semiconductor apparatus having conductive thin films
09/12/2000US6118139 Thin film transistor with reduced hydrogen passivation process time
09/12/2000US6118138 Reduced terminal testing system
09/12/2000US6118136 Superlatticed negative-differential-resistance functional transistor
09/12/2000US6117773 Methods of fabricating microelectronic devices having increased impurity concentration between a metal silicide contact surface
09/12/2000US6117753 Method of manufacturing compound semiconductor integrated circuit
09/12/2000US6117752 Method of manufacturing polycrystalline semiconductor thin film
09/12/2000US6117751 Method for manufacturing a mis structure on silicon carbide (SiC)
09/12/2000US6117749 Modification of interfacial fields between dielectrics and semiconductors
09/12/2000US6117744 Method of fabricating semiconductor device
09/12/2000US6117743 Method of manufacturing MOS device using anti reflective coating
09/12/2000US6117742 Method for making a high performance transistor
09/12/2000US6117739 Semiconductor device with layered doped regions and methods of manufacture
09/12/2000US6117738 Method for fabricating a high-bias semiconductor device
09/12/2000US6117735 Silicon carbide vertical FET and method for manufacturing the same
09/12/2000US6117734 Method of forming a trench MOS gate on a power semiconductor device
09/12/2000US6117733 Poly tip formation and self-align source process for split-gate flash cell
09/12/2000US6117731 Method of forming high capacitive-coupling ratio and high speed flash memories with a textured tunnel oxide
09/12/2000US6117729 Nonvolatile semiconductor storage device and its manufacturing method
09/12/2000US6117721 Semiconductor processing method of forming a static random access memory cell and static random access memory cell
09/12/2000US6117719 Oxide spacers as solid sources for gallium dopant introduction
09/12/2000US6117715 Methods of fabricating integrated circuit field effect transistors by performing multiple implants prior to forming the gate insulating layer thereof
09/12/2000US6117713 Method of producing a MESFET semiconductor device having a recessed gate structure
09/12/2000US6117712 Method of forming ultra-short channel and elevated S/D MOSFETS with a metal gate on SOI substrate
09/12/2000US6117701 Method for manufacturing a rate-of-rotation sensor
09/12/2000US6117691 Method of making a single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization
09/12/2000US6117688 Method for constructing ferroelectric based capacitor for use in memory systems
09/12/2000US6117679 Adjusting polynucleotide sequences; amplifying nucleotide sequences and screening a recombinant polynucleotide for a desired property
09/12/2000US6116187 Thin film forming apparatus
09/08/2000WO2000052764A1 Electrochemical deposit from cuscn in porous tio2 films
09/08/2000WO2000052761A1 Multi-layer diodes and method of producing same
09/08/2000WO2000052760A1 Trench dmos transistor structure having a low resistance path to a drain contact located on an upper surface
09/08/2000WO2000052750A2 Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor
09/08/2000WO2000031776A3 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
09/08/2000WO2000024049A9 Method of oxidizing a substrate in the presence of nitride and oxynitride films
09/08/2000WO2000020900A3 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
09/08/2000WO2000014795A9 Complementary bipolar/cmos epitaxial structure and process
09/08/2000WO1999021175A3 Integrated circuit layout methods and layout structures
09/08/2000EP1050071A3 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
09/07/2000DE19910155A1 Festkörperbauelement, seine Verwendung und Verfahren zu seiner Herstellung The solid state device, its use and process for its production
09/07/2000DE19908809A1 Method of manufacturing MOS transistor structure with enhanced body conductivity
09/07/2000DE19908399A1 Mehrschichtdioden sowie Verfahren zur Herstellung von Mehrschichtdioden Multilayer diodes as well as methods for producing multi-layer diodes
09/07/2000DE10008580A1 Semiconductor memory, especially non-volatile memory with ferroelectric capacitors, has source-drain region formed before producing gate in trench self-aligned with the source-drain region
09/06/2000EP1033811A2 Monolithic fixed active equalizer
09/06/2000EP1033761A2 Semiconductor diode
09/06/2000EP1033760A2 High withstand voltage MOS transistor and method of producing the same
09/06/2000EP1033759A2 MOS-gated device having a buried gate and process for forming same
09/06/2000EP1033758A2 Bipolar transistor and process for fabricating the same
09/06/2000EP1033757A2 Insulated gate bipolar transistor
09/06/2000EP1033756A2 Semiconductor device having a lightly doped layer and power converter comprising the same
09/06/2000EP1033755A2 Semiconductor device and manufacturing method thereof
09/06/2000EP1033754A1 Non-volatile semiconductor memory
09/06/2000EP1033748A1 New Indium implanted SiGe alloy transistor and methods of manufacturing it
09/06/2000EP0637402B1 Method of making a dual-poly non-volatile memory device using a third polysilicon layer
09/06/2000CN1265775A Method for configuring semiconductors with high precision, good homogeneity and reproducibility
09/06/2000CN1056248C Manufacturing method of electrostatic induction thyration transistor and its device
09/05/2000US6115315 Semiconductor memory device adapted for large capacity and high-speed erasure
09/05/2000US6115288 Semiconductor memory device
09/05/2000US6115287 Nonvolatile semiconductor memory device using SOI
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