| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/26/2000 | US6124158 Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants |
| 09/26/2000 | US6124156 Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions |
| 09/26/2000 | US6124155 Electro-optical device and thin film transistor and method for forming the same |
| 09/26/2000 | US6124154 Fabrication process for thin film transistors in a display or electronic device |
| 09/26/2000 | US6124153 Method for manufacturing a polysilicon TFT with a variable thickness gate oxide |
| 09/26/2000 | US6124148 Method of manufacturing semiconductor acceleration sensor |
| 09/26/2000 | CA2097668C Movement actuator/sensor systems |
| 09/25/2000 | CA2300592A1 Ohmic electrode, method of manufacturing the same and semiconductor device |
| 09/21/2000 | WO2000056132A1 Low stress die attachment |
| 09/21/2000 | WO2000055971A1 Methods and apparatus for bipolar elimination in silicon-on-insulator (soi) domino circuits |
| 09/21/2000 | WO2000055921A1 A high power impatt diode |
| 09/21/2000 | WO2000055920A1 Semiconductor element and semiconductor device |
| 09/21/2000 | WO2000055918A1 Flash memory cell having a flexible element |
| 09/21/2000 | WO2000055916A1 Methods and apparatus for fabricating a multiple modular assembly |
| 09/21/2000 | WO2000055915A1 Web process interconnect in electronic assemblies |
| 09/21/2000 | WO2000055897A1 Method of manufacturing a mis field-effect transistor |
| 09/21/2000 | WO2000055896A1 Method of manufacturing a floating gate field-effect transistor |
| 09/21/2000 | WO2000055683A1 Method for manufacturing liquid crystal display |
| 09/21/2000 | WO2000055652A1 Calibration of sensors |
| 09/21/2000 | WO2000055648A1 Hydrophone assembly |
| 09/21/2000 | WO2000055646A1 Accelerometer transducer used for seismic recording |
| 09/21/2000 | WO2000055638A1 Sensor design and process |
| 09/21/2000 | WO2000055593A2 Sensor |
| 09/21/2000 | WO2000055577A1 Integrated and multi-axis sensor assembly and packaging |
| 09/21/2000 | WO2000055387A1 Method and apparatus for formation of thin film |
| 09/21/2000 | WO2000055105A2 Explosive shear wave energy source |
| 09/21/2000 | WO2000030185A8 Quantum well thermoelectric material on very thin substrate |
| 09/21/2000 | DE10013327A1 Process for growing semiconductor crystals uses an organometallic compound, a molecular compound and diiodomethane to grow a p-doped compound semiconductor crystal |
| 09/21/2000 | DE10011054A1 Layer structure arrangement used in the production of p-channel field effect transistors has silicon and germanium layers on a single crystalline substrate |
| 09/21/2000 | CA2365886A1 Calibration of sensors |
| 09/21/2000 | CA2365868A1 Hydrophone assembly |
| 09/20/2000 | EP1037286A1 Symmetrical thyristor with reduced thickness and manufacturing method |
| 09/20/2000 | EP1037285A1 Semiconductor device having a trench gate structure |
| 09/20/2000 | EP1037284A2 Heterojunction bipolar transistor and method for fabricating the same |
| 09/20/2000 | EP1037273A2 Sense amplifier comprising field effect transistor with short channel length and adjustable threshold voltage |
| 09/20/2000 | EP1037270A1 Wiring structure of semiconductor device, electrode, and method for forming them |
| 09/20/2000 | EP1037095A2 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same |
| 09/20/2000 | EP1036418A2 Optimized border of semiconductor components |
| 09/20/2000 | EP1036416A1 Electronic hybrid component and method for the production thereof |
| 09/20/2000 | EP1036412A1 CO-PLANAR Si AND Ge COMPOSITE SUBSTRATE AND METHOD OF PRODUCING SAME |
| 09/20/2000 | EP1036411A1 Semiconductor power device manufacture |
| 09/20/2000 | EP1036409A2 Method of manufacturing a semiconductor device comprising a mos transistor |
| 09/20/2000 | EP1036408A1 RELAXED In x?GA (1-x)?As GRADED BUFFERS |
| 09/20/2000 | EP1036085A1 Self-addressable self-assembling microelectronic integrated systems, component devices, mechanisms, methods, and procedures for molecular biological analysis and diagnostics |
| 09/20/2000 | EP1012971A4 Forward body bias transistor circuits |
| 09/20/2000 | EP0979529A4 DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER |
| 09/20/2000 | CN1267406A Forward body bias transistor circuit |
| 09/20/2000 | CN1267397A Semiconductor structure comprising alpha silicon carbide zone, and use of said semiconductor structure |
| 09/20/2000 | CN1267393A Method for thermal self-healing of SiC semiconductor area doped by means of implantation and SiC based semiconductor component |
| 09/20/2000 | CN1267091A Semiconductor IC device |
| 09/20/2000 | CN1266996A Active array display device and electro-optic element |
| 09/19/2000 | US6122196 Semiconductor non-volatile storage device capable of a high speed reading operation |
| 09/19/2000 | US6122192 Non-volatile semiconductor memory device and fabrication method thereof |
| 09/19/2000 | US6121950 Control system for display panels |
| 09/19/2000 | US6121683 Electronic device and integrated circuit |
| 09/19/2000 | US6121670 Single-chip contact-less read-only memory (ROM) device and the method for fabricating the device |
| 09/19/2000 | US6121669 Integrated RC filters |
| 09/19/2000 | US6121666 Split gate oxide asymmetric MOS devices |
| 09/19/2000 | US6121659 Buried patterned conductor planes for semiconductor-on-insulator integrated circuit |
| 09/19/2000 | US6121657 Semiconductor integrated circuit device having gates arranged in a lattice |
| 09/19/2000 | US6121656 Semiconductor memory device mounted with a light emitting device |
| 09/19/2000 | US6121655 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit |
| 09/19/2000 | US6121654 Memory device having a crested tunnel barrier |
| 09/19/2000 | US6121652 Semiconductor device including active matrix circuit |
| 09/19/2000 | US6121649 Semiconductor device with ferroelectric capacitors |
| 09/19/2000 | US6121648 Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing |
| 09/19/2000 | US6121647 A perovskite crystalline lead, titanium and a rare earth oxide used in a semiconductor device, e.g., nonvolatile memories; infrared sensors; optical modulators, switches, integrated circuits; reduced leakage; reverse polarity |
| 09/19/2000 | US6121641 Compound semiconductor field-effect transistor with improved current flow characteristic |
| 09/19/2000 | US6121633 Latch-up free power MOS-bipolar transistor |
| 09/19/2000 | US6121632 Thin-film transistor array and method for manufacturing same |
| 09/19/2000 | US6121631 Test structure to determine the effect of LDD length upon transistor performance |
| 09/19/2000 | US6121157 Semiconductor device and its manufacture |
| 09/19/2000 | US6121153 Semiconductors with crystallization and dopes of mixtures of gallium arsenide with aluminum or indium |
| 09/19/2000 | US6121137 Forming a titanium film over silicon substrate, annealing to form silicide and single crystal silicon film, then diffusion |
| 09/19/2000 | US6121127 Methods and devices related to electrodes for p-type group III nitride compound semiconductors |
| 09/19/2000 | US6121125 Method of forming polycide gate |
| 09/19/2000 | US6121122 Method of contacting a silicide-based schottky diode |
| 09/19/2000 | US6121116 Flash memory device isolation method and structure |
| 09/19/2000 | US6121115 Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers |
| 09/19/2000 | US6121104 Charge cancellation technique for integrated circuit resistors |
| 09/19/2000 | US6121102 Method of electrical connection through an isolation trench to form trench-isolated bipolar devices |
| 09/19/2000 | US6121101 Process for fabricating bipolar and BiCMOS devices |
| 09/19/2000 | US6121100 Method of fabricating a MOS transistor with a raised source/drain extension |
| 09/19/2000 | US6121099 Selective spacer formation for optimized silicon area reduction |
| 09/19/2000 | US6121096 Implant process utilizing as an implant mask, spacers projecting vertically beyond a patterned polysilicon gate layer |
| 09/19/2000 | US6121094 Substrates with dielectric layer over metal layer, oxygen layer, heat treatment of metal layer after oxygen impregnation, forming source/drain region |
| 09/19/2000 | US6121092 Silicide blocking process to form non-silicided regions on MOS devices |
| 09/19/2000 | US6121089 Methods of forming power semiconductor devices having merged split-well body regions therein |
| 09/19/2000 | US6121088 Method of manufacture of undoped polysilicon as the floating-gate of a split-gate flash cell |
| 09/19/2000 | US6121087 Integrated circuit device with embedded flash memory and method for manufacturing same |
| 09/19/2000 | US6121077 Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility |
| 09/19/2000 | US6121076 Method for producing semiconductor device |
| 09/19/2000 | US6121075 Fabrication of two-dimensionally arrayed quantum device |
| 09/19/2000 | US6121072 Method of fabricating nonvolatile memory device |
| 09/19/2000 | US6119675 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 09/19/2000 | CA2199523C Method of manufacturing semiconductor device |
| 09/14/2000 | WO2000054339A1 Thin-film transistor, panel, and methods for producing them |
| 09/14/2000 | WO2000054338A1 High speed ge channel heterostructures for field effect devices |
| 09/14/2000 | WO2000054335A1 Semiconductor device comprising a non-volatile memory |
| 09/14/2000 | WO2000054319A1 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor |