Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2000
10/03/2000US6127267 Forming first metal film on silicon substrate, overcoating with low stress metal nitride film, then heat treating while excluding nitrogen to form metal silicide interface layer that when deforms is not affected by the metal nitride layer
10/03/2000US6127255 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
10/03/2000US6127251 Semiconductor device with a reduced width gate dielectric and method of making same
10/03/2000US6127248 Selectively doping first region of substrate surrounding first gate structure using an oxidation inhibitor, then further oxidation of dielectric portions around second gate structure in second substrate region to a greater degree
10/03/2000US6127246 Oxidizing the sides of pillar-shaped laminated structure to form a one-dimensional quantum wire including fine tunnel junctions
10/03/2000US6127245 Grinding technique for integrated circuits
10/03/2000US6127241 Trench isolation structure and fabrication method thereof
10/03/2000US6127236 Method of forming a lateral bipolar transistor
10/03/2000US6127235 Method for making asymmetrical gate oxide thickness in channel MOSFET region
10/03/2000US6127233 Lateral MOSFET having a barrier between the source/drain regions and the channel region
10/03/2000US6127232 Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate length and ultra-shallow junctions
10/03/2000US6127231 Method of making transistors in an IC including memory cells
10/03/2000US6127230 Vertical semiconductor device and method of manufacturing the same
10/03/2000US6127227 Thin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memory
10/03/2000US6127225 Memory cell having implanted region formed between select and sense transistors
10/03/2000US6127215 Deep pivot mask for enhanced buried-channel PFET performance and reliability
10/03/2000US6127211 Method of manufacturing transistor
10/03/2000US6127210 Manufacturing method of CMOS thin film semiconductor device and CMOS thin film semiconductor device manufactured thereby
10/03/2000US6127209 Semiconductor device and method of manufacturing the same
10/03/2000US6126752 Semiconductor device having capacitor and manufacturing apparatus thereof
09/2000
09/28/2000WO2000057484A1 Integrated circuit capacitor in a silicon-on-insulator integrated circuit
09/28/2000WO2000057483A1 Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
09/28/2000WO2000057482A1 Novel transistor with metal gate and buried counter-doped channel and method for making same
09/28/2000WO2000057481A2 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure
09/28/2000WO2000057480A1 Novel semiconductor device combining the advantages of solid and soi architectures, and method for making same
09/28/2000WO2000057479A1 Semiconductor device with junctions having dielectric pockets and method for making same
09/28/2000WO2000057478A2 An electronic device comprising a trench gate field effect device
09/28/2000WO2000057476A1 Independently programmable memory segments in isolated n-wells within a pmos eeprom array and method therefor
09/28/2000WO2000057463A1 Heat treating method for thin film and forming method for thin film
09/28/2000WO2000057461A1 Method for producing a mushroom-shaped or t-shaped gate
09/28/2000WO2000057454A2 Improved integrated oscillators and tuning circuits
09/28/2000WO2000057326A1 Assistance method and apparatus
09/28/2000WO2000019512A8 Pseudomorphic high electron mobility transistors
09/28/2000WO2000016041A3 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
09/28/2000EP1145324A3 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure
09/28/2000DE19912950A1 Semiconductor device, especially a bipolar transistor with a base-collector junction operable in the blocking direction, has a different bandgap interlayer adjacent a space charge zone for stopping minority charge carriers
09/27/2000EP1039557A1 Silicon based conductive material and process for production thereof
09/27/2000EP1039548A2 Field effect controlled semiconductor component
09/27/2000EP1039547A1 Semiconductor device
09/27/2000EP1039546A1 Semiconductor device with reduced leakage current and method of manufacturing it
09/27/2000EP1039545A2 Semiconductor device
09/27/2000EP1039536A1 Ferroelectric memory or a method of producing the same
09/27/2000EP1039532A2 Method for manufacturing semiconductor devices of the bipolar type
09/27/2000EP1039525A1 Dielectric element and manufacturing method therefor
09/27/2000EP1039516A1 Ohmic electrode, method of manufacturing the same and semiconductor device
09/27/2000EP1039512A2 Method for growing semiconductor film by pulsed chemical vapour deposition
09/27/2000EP1039476A2 Ferroelectric memory
09/27/2000EP1039388A2 Block erasable semiconductor memory device with defective block replacement
09/27/2000EP1039264A2 Angular velocity sensor
09/27/2000EP1038321A1 High voltage semiconductor component
09/27/2000EP1038320A2 Method for producing a matrix from thin-film transistors with storage capacities
09/27/2000EP1038308A2 Lateral thin-film soi devices with graded top oxide and graded drift region
09/27/2000EP0829099A4 Bidirectional blocking accumulation-mode trench power mosfet
09/27/2000EP0744098B1 A protected switch
09/27/2000CN2398728Y Transistor for communication apparatus overvoltage current foldback
09/27/2000CN1268248A Nonvolatile semiconductor memory
09/27/2000CN1267917A Semi-conductor device and its producing method
09/27/2000CN1267916A Semi-conductor device and its producing method
09/27/2000CN1267911A Double-field effect transistor chip and method for fixing the same chip
09/27/2000CN1267907A Semiconductor device and its producing method
09/27/2000CN1267906A Semiconductor device and its producing method
09/27/2000CN1267902A Semiconductor device and its producing method
09/27/2000CN1267888A Semi-conductor storage with block unit to erase
09/26/2000US6125062 Single electron MOSFET memory device and method
09/26/2000US6125060 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
09/26/2000US6124903 Liquid crystal display device
09/26/2000US6124751 Boost capacitor for an H-bridge integrated circuit motor controller having matching characteristics with that of the low-side switching devices of the bridge
09/26/2000US6124643 Device assembly facilitating gap filling between spaced layers of semiconductor substrates
09/26/2000US6124633 Vertical interconnect process for silicon segments with thermally conductive epoxy preform
09/26/2000US6124629 Semiconductor device including a resin sealing member which exposes the rear surface of the sealed semiconductor chip
09/26/2000US6124628 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
09/26/2000US6124627 Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
09/26/2000US6124622 MIS transistor with a three-layer device isolation film surrounding the MIS transistor
09/26/2000US6124620 Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation
09/26/2000US6124619 Semiconductor device including upper, lower and side oxidation-resistant films
09/26/2000US6124614 Si/SiGe MOSFET and method for fabricating the same
09/26/2000US6124613 SOI-MOS field effect transistor that withdraws excess carrier through a carrier path silicon layer
09/26/2000US6124612 FET with source-substrate connection and method for producing the FET
09/26/2000US6124611 Epitaxial channel vertical MOS transistor
09/26/2000US6124608 Non-volatile trench semiconductor device having a shallow drain region
09/26/2000US6124606 Method of making a large area imager with improved signal-to-noise ratio
09/26/2000US6124605 Insulated gate bipolar transistor with latch-up protection
09/26/2000US6124604 Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance
09/26/2000US6124603 Complementary integrated circuit having N channel TFTs and P channel TFTs
09/26/2000US6124602 Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit
09/26/2000US6124217 Forming a silicon oxynitride layer upon a semiconductor topography, perfomring a bake of silicon oxynitride layer, and forming an oxide layer directly over said silicon oxynitride layer thereby forming the interlevel dielectric
09/26/2000US6124190 Method of manufacturing semiconductor device with silicide layer without short circuit
09/26/2000US6124189 Metallization structure and method for a semiconductor device
09/26/2000US6124188 Semiconductor device and fabrication method using a germanium sacrificial gate electrode plug
09/26/2000US6124181 Method for manufacturing bipolar transistor capable of suppressing deterioration of transistor characteristics
09/26/2000US6124180 BiCMOS process for counter doped collector
09/26/2000US6124179 Inverted dielectric isolation process
09/26/2000US6124177 Method for making deep sub-micron mosfet structures having improved electrical characteristics
09/26/2000US6124176 Method of producing a semiconductor device with reduced fringe capacitance and short channel effect
09/26/2000US6124174 Spacer structure as transistor gate
09/26/2000US6124170 Method for making flash memory
09/26/2000US6124169 Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories
09/26/2000US6124168 Method for forming an asymmetric floating gate overlap for improved device performance in buried bit-line devices
09/26/2000US6124163 Integrated chip multiplayer decoupling capacitors
09/26/2000US6124160 Semiconductor device and method for manufacturing the same
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