Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2000
10/11/2000EP1042801A1 Method of selectively forming silicide
10/11/2000EP0870321A4 Esd-protected thin film capacitor structures
10/11/2000EP0856143B1 Process for producing a speed of rotation coriolis sensor
10/11/2000CN1269520A Active matrix baseboard, photo-electric apparatus and method for producing active matrix base board
10/11/2000CN1057404C Ge-Si heterojunction diode low foward voltage drop and high velocity
10/10/2000US6130840 Memory cell having an erasable Frohmann-Bentchkowsky memory transistor
10/10/2000US6130471 Ballast resistor connected electrically to each of said collectors, said ballast resistors being doped silicon
10/10/2000US6130463 Field effect transistor and method of manufacturing same
10/10/2000US6130461 Semiconductor memory device
10/10/2000US6130460 Interconnect track connecting, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit, and process for producing such a track
10/10/2000US6130458 Power IC having SOI structure
10/10/2000US6130457 Semiconductor-on-insulator devices having insulating layers therein with self-aligned openings
10/10/2000US6130455 Semiconductor device, thin film transistor having an active crystal layer formed by a line containing a catalyst element
10/10/2000US6130454 Gate conductor formed within a trench bounded by slanted sidewalls
10/10/2000US6130453 Flash memory structure with floating gate in vertical trench
10/10/2000US6130452 Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
10/10/2000US6130449 Semiconductor memory device and a method for fabricating the same
10/10/2000US6130446 Blue light emitting diode, laser diode, or light receiving element; aluminum layer, silicon layer, nickel layer and gold layer are laminated in this order on an n-type gallium nitride
10/10/2000US6130443 Thin film transistor array panel for liquid crystal display comprising gate pattern including gate line, gate electrode and pad formed on a transparent substrate, gate insulating layer covering gate pattern, amorphous silicon layer
10/10/2000US6130165 Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates
10/10/2000US6130164 Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof
10/10/2000US6130145 Insitu doped metal policide
10/10/2000US6130144 Method for making very shallow junctions in silicon devices
10/10/2000US6130135 Method of fabricating lightly-doped drain transistor having inverse-T gate structure
10/10/2000US6130134 Method for forming asymmetric flash EEPROM with a pocket to focus electron injections
10/10/2000US6130133 Fabricating method of high-voltage device
10/10/2000US6130130 Semiconductor device and a method for manufacturing thereof
10/10/2000US6130120 Method and structure for crystallizing a film
10/10/2000US6130119 Conductive film-attached substrate and method of manufacturing the same
10/10/2000US6130114 Semiconductor device
10/10/2000US6130010 A silicon composite with minimizing the size of corner-undercut portions for detecting an amount of acceleration, pressure in an air bag system
10/05/2000WO2000059093A1 Switch circuit and semiconductor switch, for battery-powered equipment
10/05/2000WO2000059084A2 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
10/05/2000WO2000059045A2 Multilayer semiconductor structure with phosphide-passivated germanium substrate
10/05/2000WO2000059039A1 Semiconductor device
10/05/2000WO2000059032A1 Nonvolatile memory
10/05/2000WO2000059027A1 Thin film transistors and their manufacture
10/05/2000WO2000059016A2 Method for producing thin, uniform oxide layers on silicon surfaces
10/05/2000WO2000058999A2 Semiconductor structures having a strain compensated layer and method of fabrication
10/05/2000WO2000058969A1 Device with embedded flash and eeprom memories
10/05/2000WO2000058872A1 Field programmable ball array
10/05/2000WO2000058806A2 Ferroelectric based memory devices utilizing hydrogen barriers and getters
10/05/2000WO2000046859A8 High-voltage transistor with multi-layer conduction region
10/05/2000WO2000025625A3 Method and apparatus for insertion and retainment of pomade within a dispenser
10/05/2000DE19930117A1 Transistorised non-volatile memory cell configuration e.g. for automobile engineering applications
10/05/2000DE19913375A1 MOS-Transistorstruktur mit einer Trench-Gate-Elektrode und einem verringerten spezifischen Einschaltwiderstand und Verfahren zur Herstellung einer MOS-Transistorstruktur MOS transistor structure with a trench gate electrode and a reduced specific on-resistance and process for producing a MOS transistor structure
10/05/2000DE10012141A1 Single electron transistor having a quantum dot size of a few tens of nanometers is produced by forming the upper gate on trench side walls in an insulation film
10/04/2000EP1041653A2 Device comprising organic N-channel semiconductor material
10/04/2000EP1041652A2 Process for fabricating organic circuits
10/04/2000EP1041643A1 Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit
10/04/2000EP1041642A1 A method to fabricate a floating gate with a sloping sidewall for a flash memory
10/04/2000EP1041640A2 Power trench MOS-gated device and method of manufacturing it
10/04/2000EP1041639A1 Process for fabrication of a planar heterostructure
10/04/2000EP1041638A1 High density mos-gated power device and process for forming same
10/04/2000EP1041637A1 High-speed imaging device
10/04/2000EP1041634A1 Power MOSFET having voltage-clamped gate
10/04/2000EP1041622A1 Interconnect structure between conductor layers and fabricating method thereof
10/04/2000EP1041611A1 Fine protuberance structure and method of production thereof
10/04/2000EP1040556A1 Electrical circuit arrangement for transforming magnetic field energy into electric field energy
10/04/2000EP1040525A2 Silicon-on-insulator (soi) hybrid transistor device structure
10/04/2000EP1040524A1 Improved static induction transistor
10/04/2000EP1040523A1 Power component bearing interconnections
10/04/2000EP1040522A1 Dual-band quantum-well infrared sensing array
10/04/2000EP1040521A2 Silicon oxide insulator (soi) semiconductor having selectively linked body
10/04/2000EP1040517A2 Semiconductor component and manufacturing method for semiconductor component
10/04/2000EP1040515A1 Method for forming a uniform network of semiconductor islands on an insulating substrate
10/04/2000EP1040514A2 LONG RANGE ORDERED AND EPITAXIAL OXIDES INCLUDING SiO 2?, ON Si, Si x?Ge 1-x?, GaAs AND OTHER SEMICONDUCTORS, MATERIAL SYNTHESIS, AND APPLICATIONS THEREOF
10/04/2000EP1040486A1 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices
10/04/2000EP0839386B1 Method of producing an mos transistor
10/04/2000EP0775371B1 Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorous
10/04/2000EP0727098B1 High-voltage ldd-mosfet with increased breakdown voltage and method of fabrication
10/04/2000CN2399828Y Improved large current resistance semiconductor device
10/04/2000CN1269054A Bipolar power transistors and mfg. method
10/04/2000CN1268905A Laminated assembly for active bioelectronic device
10/04/2000CN1057171C Low voltage one transistor flash EEPROM cell
10/03/2000US6128231 Nonvolatile semiconductor memory device capable of optimizing program time
10/03/2000US6128230 Semiconductor memory with PN junction potential reduction in a writing mode
10/03/2000US6128223 Semiconductor memory device
10/03/2000US6128212 Metal ferroelectric silicon field effect transistor memory
10/03/2000US6128178 Very thin film capacitor for dynamic random access memory (DRAM)
10/03/2000US6128173 Semiconductor integrated circuit device having protective transistors with P-N junction broken down earlier than breakdown of gate insulator of component transistors
10/03/2000US6127852 Semiconductor integrated circuit for parallel signal processing
10/03/2000US6127765 Micro-electromechanical device
10/03/2000US6127734 Semiconductor device comprising a contact hole of varying width thru multiple insulating layers
10/03/2000US6127720 Semiconductor device and method for manufacturing the same
10/03/2000US6127717 Totally self-aligned transistor with polysilicon shallow trench isolation
10/03/2000US6127716 Heterojunction bipolar transistor and manufacturing method thereof
10/03/2000US6127712 Mosfet with buried contact and air-gap gate structure
10/03/2000US6127711 Semiconductor device having plural air gaps for decreasing parasitic capacitance
10/03/2000US6127709 Guard ring structure for semiconductor devices and process for manufacture thereof
10/03/2000US6127708 Semiconductor device having an intervening region between channel stopper and diffusion region
10/03/2000US6127703 Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region
10/03/2000US6127702 Semiconductor device having an SOI structure and manufacturing method therefor
10/03/2000US6127700 Field-effect transistor having local threshold-adjust doping
10/03/2000US6127699 Method for fabricating MOSFET having increased effective gate length
10/03/2000US6127698 High density/speed nonvolatile memories with a textured tunnel oxide and a high capacitive-coupling ratio
10/03/2000US6127696 High voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped drain
10/03/2000US6127695 Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
10/03/2000US6127692 Photoelectric conversion apparatus
10/03/2000US6127284 Method of manufacturing a semiconductor device having nitrogen-bearing oxide gate insulating layer
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