Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2000
10/24/2000US6136655 Method of making low voltage active body semiconductor device
10/24/2000US6136654 Method of forming thin silicon nitride or silicon oxynitride gate dielectrics
10/24/2000US6136653 Method and device for producing undercut gate for flash memory
10/24/2000US6136652 Preventing dielectric thickening over a channel area of a split-gate transistor
10/24/2000US6136648 Forming isolation film by selectively oxidizing layer of film constituting floating gate to form oxide film
10/24/2000US6136641 Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
10/24/2000US6136633 Trench-free buried contact for locos isolation
10/24/2000US6136631 Forming improved microelectronic integrated sensor with upper layers and hollow chamber in which cantilever is disposed having nitride pillar extending through hollow chamber for supporting upper layers
10/24/2000US6136629 Methods for forming a charge coupled devices including buried transmission gates
10/24/2000US6136625 Method of manufacturing an active matrix panel
10/24/2000CA2179246C Polysilicon defined diffused resistor
10/19/2000WO2000062349A1 Heterostructure spherical shaped semiconductor device
10/19/2000WO2000062346A1 Punchthrough diode and method of manufacturing the same
10/19/2000WO2000062345A1 High-voltage semiconductor device
10/19/2000WO2000062342A1 Thin film capacitor element
10/19/2000WO2000062336A1 Method and device for treating thin layers of amorphous silicon
10/19/2000WO2000062331A2 Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium
10/19/2000DE19916959A1 Thin film transistor matrix formation for LCD screen, by photolithographically structuring semiconductor layer to generate semiconductor channel
10/19/2000DE10018404A1 Semiconductor extension sensor, e.g. a vehicle intake pressure sensor or brake fluid pressure sensor, has a packaging-free region at a lead frame back face opposite a chip mounting area
10/19/2000DE10013219A1 Flüssigkristallanzeige-Vorrichtung und Herstellungsverfahren dafür A liquid crystal display device and production method thereof
10/18/2000EP1045451A2 Semiconductor device and method for fabricating the same
10/18/2000EP1045447A2 Electro-optical device and electronic equipment
10/18/2000EP1045436A1 Semiconductor device, substrate for electro-optical device, electro-optical device, electronic device, and projection display
10/18/2000EP1045435A2 Chemical vapor deposition of Pb5Ge3O11 thin film for ferroelectric applications
10/18/2000EP1044475A2 Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
10/18/2000EP1044474A1 Trench-gate semiconductor device
10/18/2000EP1044473A1 Low-inductance, gate-controlled thyristor
10/18/2000EP1044470A1 Method for making asymmetrical gate oxide thicknesses
10/18/2000CN1270704A Electrical devices and a method of manufacturing the same
10/18/2000CN1270703A Insulating gate type bipolar semiconductor device
10/18/2000CN1270674A Electron devices for single electron and nuclear spin measurement
10/17/2000US6134424 High-frequency power amplifier and mobile communication device using same
10/17/2000US6134144 Flash memory array
10/17/2000US6134118 Conductive epoxy flip-chip package and method
10/17/2000US6133968 Liquid crystal display panel
10/17/2000US6133625 Semiconductor device and method for manufacturing the same
10/17/2000US6133620 Semiconductor device and process for fabricating the same
10/17/2000US6133617 High breakdown voltage semiconductor device
10/17/2000US6133616 Tempsense FET with implanted line of diodes (EPS)
10/17/2000US6133610 Silicon-on-insulator chip having an isolation barrier for reliability and process of manufacture
10/17/2000US6133609 High-voltage thin-film transistor with sub-gate elements
10/17/2000US6133607 Semiconductor device
10/17/2000US6133606 High voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes
10/17/2000US6133605 Semiconductor nonvolatile memory transistor and method of fabricating the same
10/17/2000US6133604 NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions
10/17/2000US6133603 Memory device and memory array
10/17/2000US6133601 Non-volatile semiconductor memory device with inter-layer insulation film
10/17/2000US6133596 Near complete charge transfer device
10/17/2000US6133594 Compound semiconductor device
10/17/2000US6133593 Channel design to reduce impact ionization in heterostructure field-effect transistors
10/17/2000US6133592 Compound semiconductor device and method for producing the same
10/17/2000US6133591 Silicon-on-insulator (SOI) hybrid transistor device structure
10/17/2000US6133590 Low resistance contact semiconductor diode
10/17/2000US6133587 Silicon carbide semiconductor device and process for manufacturing same
10/17/2000US6133586 Semiconductor memory device and method of fabricating the same
10/17/2000US6133583 Semiconductor device and method for producing the same
10/17/2000US6133157 Selectively etching n-type doped second silicon layer over doped first silicon layer with etching gas including freon-14 gas and hydrogen chloride or chlorine
10/17/2000US6133153 Self-aligned contacts for semiconductor device
10/17/2000US6133150 Semiconductor device and method for manufacturing the same
10/17/2000US6133149 Forming a diffusion barrier layer of tungsten nitride between tungsten silicide underlayer on semiconductor substrate and silicon nitride overcoating, then photolithographically forming gate structure
10/17/2000US6133127 Method for manufacturing a semiconductor device
10/17/2000US6133122 Thermal treatment of semiconductor between the ion injection step forming the diffusion layer and the activation of the diffusion layer, thereby discharging fluorine
10/17/2000US6133120 Doping boron as charge acceptor to occupy silicon sites in the silicon carbide crystal lattice
10/17/2000US6133115 Formation of gate electrode
10/17/2000US6133107 Process for co-integrating DMOS transistors with schottky diode body structure
10/17/2000US6133106 Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement
10/17/2000US6133099 Vertical MOSFET and method of manufacturing thereof
10/17/2000US6133082 Method of fabricating CMOS semiconductor device
10/17/2000US6133077 Formation of high-voltage and low-voltage devices on a semiconductor substrate
10/17/2000US6133074 Thin film transistor and method of fabricating the same
10/17/2000US6133073 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
10/17/2000US6133071 Semiconductor device with plate heat sink free from cracks due to thermal stress and process for assembling it with package
10/17/2000US6133059 Integrated micromechanical sensor device and process for producing it
10/17/2000US6133056 Field emission displays with reduced light leakage
10/17/2000US6132806 Method of implementation of MOS transistor gates with a high content
10/17/2000US6132800 Production process of color liquid crystal display device
10/17/2000US6132592 Method of etching non-doped polysilicon
10/17/2000US6131466 Integrated piezoresistive pressure sensor
10/17/2000US6131457 Acceleration sensor
10/17/2000CA2155121C Micromachined relay and method of forming the relay
10/17/2000CA2021184C Input protection device
10/12/2000WO2000060672A1 Semiconductor device comprising a non-volatile memory cell
10/12/2000WO2000060671A1 Semiconductor device and semiconductor substrate
10/12/2000WO2000060670A2 Integrated semiconductor device with one lateral power gate
10/12/2000WO2000060665A2 An eeprom cell on soi
10/12/2000WO2000060661A1 Method of manufacturing semiconductor device
10/12/2000WO2000060654A1 Power rectifier device
10/12/2000WO2000060644A2 A method of manufacturing a trench gated vdmos
10/12/2000WO2000060146A1 A crystalline oxide-on-semiconductor structure and a generic process for preparing the structure
10/12/2000WO2000028601A3 Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
10/12/2000EP1044475A3 Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
10/11/2000EP1043778A1 Method of fabrication of a high voltage MOS transistor
10/11/2000EP1042818A1 C
10/11/2000EP1042817A2 Bipolar high-volt power component
10/11/2000EP1042811A1 Silicon-on-insulator configuration which is compatible with bulk cmos architecture
10/11/2000EP1042810A1 Formation of control and floating gates of semiconductor non-volatile memories
10/11/2000EP1042808A1 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same
10/11/2000EP1042807A2 Semiconductor device
10/11/2000EP1042805A1 Process for producing a memory cell array
10/11/2000EP1042804A1 A method and system for providing a tapered shallow trench isolation structure profile
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