Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2000
11/07/2000US6144538 High voltage MOS transistor used in protection circuits
11/07/2000US6144422 Thin film transistor having a vertical structure and a method of manufacturing the same
11/07/2000US6144094 Suppression of a deterioration in the dielectric breakdown time of a gate oxide film introduced by boron diffusion from a gate electrode to improve the reliability of a semiconductor by forming silicon dioxide insulation film
11/07/2000US6144087 Semiconductor nonvolatile storage and method of fabricating the same
11/07/2000US6144085 Power transistor device having hot-location and cool-location temperature sensors
11/07/2000US6144082 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
11/07/2000US6144081 Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
11/07/2000US6144079 Semiconductor device and method of manufacturing the same
11/07/2000US6144077 Semiconductor device comprising a bipolar transistor
11/07/2000US6144072 Semiconductor device formed on insulating layer and method of manufacturing the same
11/07/2000US6144071 Ultrathin silicon nitride containing sidewall spacers for improved transistor performance
11/07/2000US6144070 High breakdown-voltage transistor with electrostatic discharge protection
11/07/2000US6144069 LDMOS transistor
11/07/2000US6144068 Transistor device structures, and methods for forming such structures
11/07/2000US6144067 Strip gate poly structure for increased channel width and reduced gate resistance
11/07/2000US6144066 Protection of the logic well of a component including an integrated MOS power transistor
11/07/2000US6144065 MOS gated device with self aligned cells
11/07/2000US6144063 Ultra-thin oxide for semiconductors
11/07/2000US6144062 Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture
11/07/2000US6144060 Capacitor which comprise a first dielectric layer, an electrically insulating layer on the firsst dielectric layer, and an aluminum oxide buffer layer formed by atomic layer deposition and stabilized by heat treatment
11/07/2000US6144057 Semiconductor memory device including a field effect transistor
11/07/2000US6144056 Methods of forming conductive lines, methods of forming insulative spacers over conductive line sidewalls, methods of forming memory circuitry, and memory circuitry
11/07/2000US6144049 Field effect transistor
11/07/2000US6144048 Heterojunction field effect transistor and method of fabricating the same
11/07/2000US6144047 Semiconductor device having impurity concentrations for preventing a parasitic channel
11/07/2000US6144046 Power inverter having series connection of semiconductor devices each having an inverse parallel connection of an insulated gate bipolar transistor and a diode
11/07/2000US6144045 High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures
11/07/2000US6144042 Polysilicon thin film transistor
11/07/2000US6144041 A semiconductor with active region in which no grain boundary exists comprising a hydrogen or halogen element, nitrogen and carbon atoms, oxygen atoms to neutralize a point defect at specific densities, and metal for promoting crystallilztion
11/07/2000US6143669 Method of growing gate oxides
11/07/2000US6143661 Method of processing semiconductor device with laser
11/07/2000US6143636 High density flash memory
11/07/2000US6143635 Field effect transistors with improved implants and method for making such transistors
11/07/2000US6143632 Deuterium doping for hot carrier reliability improvement
11/07/2000US6143623 Method of forming a trench isolation for semiconductor device with lateral projections above substrate
11/07/2000US6143612 High voltage transistor with high gated diode breakdown, low body effect and low leakage
11/07/2000US6143609 Method for forming semiconductor memory device
11/07/2000US6143607 Method for forming flash memory of ETOX-cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current
11/07/2000US6143606 Method for manufacturing split-gate flash memory cell
11/07/2000US6143593 Elevated channel MOSFET
11/07/2000US6143592 MOS semiconductor device and method of fabricating the same
11/07/2000US6143582 High density electronic circuit modules
11/07/2000US6143072 Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
11/07/2000US6142021 Selectable pressure sensor
11/07/2000CA2204394C Silicon-germanium-carbon compositions and processes thereof
11/02/2000WO2000065669A1 Electrostatically controlled tunneling transistor
11/02/2000WO2000065663A1 Heterostructure field-effect transistor
11/02/2000WO2000065661A1 Semiconductor device
11/02/2000WO2000065653A1 A method in the fabrication of organic thin-film semiconducting devices
11/02/2000WO2000065646A1 A super-self-aligned trench-gate dmos with reduced on-resistance
11/02/2000WO2000065636A2 A bipolar transistor
11/02/2000WO2000043573A8 Passivating etchants for metallic particles
11/02/2000EP1049176A2 Electronic device and electronic apparatus
11/02/2000EP1049175A1 Reverse conducting thyristor, mechanical contact semiconductor device, and semiconductor substrate
11/02/2000EP1049174A2 Power MOS device with increased channel width and process for forming same
11/02/2000EP1049172A2 A SOI structure semiconductor device and a fabrication method thereof
11/02/2000EP1049168A2 Semiconductor device
11/02/2000EP1049167A2 Semiconductor device and manufacturing method thereof
11/02/2000EP1049156A1 Manufacturing process of integrated SOI circuit structures
11/02/2000EP1049154A2 Process for forming device isolation region
11/02/2000EP1049148A2 C-axis oriented lead germanate film and deposition method
11/02/2000EP1049144A1 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
11/02/2000EP1049102A2 Non-volatile semiconductor memory device
11/02/2000EP1048082A1 Circuitry with at least one capacitor and process for producing the same
11/02/2000EP1048080A1 Semiconductor device
11/02/2000EP1048079A1 Silicon on insulator high-voltage switch
11/02/2000EP1048078A1 Lateral bipolar transistor and method of making same.
11/02/2000EP1048077A1 Power transistor device
11/02/2000EP1048076A1 Low trigger and holding voltage scr device for esd protection
11/02/2000EP1048074A1 Power mosfet
11/02/2000EP1048068A2 Method of manufacturing a semiconductor device with a field effect transistor
11/02/2000EP1048067A1 Thin film transistors and their manufacture
11/02/2000EP1048066A1 Method of manufacturing a semiconductor device with a bipolar transistor
11/02/2000EP1048065A2 Method of manufacturing a semiconductor device with a bipolar transistor
11/02/2000EP1048061A1 Double-pulse laser crystallisation of thin semiconductor films
11/02/2000EP0722619B1 Varactor diode having a stepped capacitance-voltage profile
11/02/2000DE19919905A1 Ohmic contacted semiconductor device, especially a silicon carbide power electronic or optoelectronic device, comprises a silicide and carbide junction formed from components of a silicon carbide region and an adjoining ohmic contact layer
11/02/2000DE19918028A1 Halbleiter-Bauelement Semiconductor component
11/02/2000DE10010043A1 Semiconductor device simulating apparatus, simulates and outputs current value based on input test signal and various parameters
11/02/2000CA2370852A1 A method in the fabrication of organic thin-film semiconducting devices
11/01/2000CN1272223A Reduction of gate-induced drain leakage in semiconductor devices
11/01/2000CN1271963A Non volatile semi conductor memory device and its manufacturing method
11/01/2000CN1271945A Non volatile semiconductor memory
11/01/2000CN1271871A Corrosion technique of anisotropic nitride by inlay corrosion method
11/01/2000CN1058108C MIS semiconductor device and method for fabricating same
10/2000
10/31/2000US6141260 Single electron resistor memory device and method for use thereof
10/31/2000US6141255 1 transistor cell for EEPROM application
10/31/2000US6141252 Voltage regulation for integrated circuit memory
10/31/2000US6141250 Non-volatile semiconductor memory device
10/31/2000US6141246 Memory device with sense amplifier that sets the voltage drop across the cells of the device
10/31/2000US6141242 Low cost mixed memory integration with substantially coplanar gate surfaces
10/31/2000US6141204 Capacitor constructions and semiconductor processing method of forming capacitor constructions
10/31/2000US6140980 Head-mounted display system
10/31/2000US6140838 High density and high speed magneto-electronic logic family
10/31/2000US6140694 Field isolated integrated injection logic gate
10/31/2000US6140689 Micromechanical sensor
10/31/2000US6140687 High frequency ring gate MOSFET
10/31/2000US6140684 SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
10/31/2000US6140680 Integrated power semiconductor transistor with current sensing
10/31/2000US6140679 Zero thermal budget manufacturing process for MOS-technology power devices
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