Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2000
12/06/2000CN1275813A Transistor and making method thereof
12/06/2000CN1275810A Insulator base semiconductor device and method for stabilizing same
12/06/2000CN1275809A Semiconductor device having capacitance element and formation method thereof
12/06/2000CN1275806A Electrostatic discharging protector for polysilicon diode
12/06/2000CN1275801A Semiconductor device and making method thereof
12/06/2000CN1275796A Method for making semiconductor device
12/06/2000CN1275761A Magnet head, magnetic disk, and connection method and equipment
12/06/2000CN1059290C Method for assembly integrated circuit on a shared substrate
12/05/2000US6157575 Nonvolatile memory device and operating method thereof
12/05/2000US6157574 Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data
12/05/2000US6157568 Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer
12/05/2000US6157492 Apparatus and method for laser radiation
12/05/2000US6157421 Liquid crystal display and method of manufacturing the same
12/05/2000US6157361 Matrix-type image display device
12/05/2000US6157252 Battery polarity insensitive integrated circuit amplifier
12/05/2000US6157216 Circuit driver on SOI for merged logic and memory circuits
12/05/2000US6157068 Semiconductor device with local interconnect of metal silicide
12/05/2000US6157067 Metal oxide semiconductor capacitor utilizing dummy lithographic patterns
12/05/2000US6157066 Semiconductor aggregate substrate and semiconductor device with fuse structure to prevent breakdown
12/05/2000US6157063 MOS field effect transistor with an improved lightly doped diffusion layer structure and method of forming the same
12/05/2000US6157062 Integrating dual supply voltage by removing the drain extender implant from the high voltage device
12/05/2000US6157061 Nonvolatile semiconductor memory device and method of manufacturing the same
12/05/2000US6157060 High density integrated semiconductor memory and method for producing the memory
12/05/2000US6157059 Nonvolatile floating gate memory with improved interpoly dielectric
12/05/2000US6157058 Low voltage EEPROM/NVRAM transistors and making method
12/05/2000US6157057 Flash memory cell
12/05/2000US6157056 Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays
12/05/2000US6157053 Charge transfer device and method of driving the same
12/05/2000US6157049 Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses
12/05/2000US6157048 Thin film transistors with elongated coiled electrodes, and large area devices containing such transistors
12/05/2000US6157047 Light emitting semiconductor device using nanocrystals
12/05/2000US6156662 Fabrication process of a liquid crystal display device with improved yield
12/05/2000US6156637 Method of planarizing a semiconductor device by depositing a dielectric ply structure
12/05/2000US6156630 Titanium boride gate electrode and interconnect and methods regarding same
12/05/2000US6156628 Semiconductor device and method of manufacturing the same
12/05/2000US6156624 Preparing silicon substrates with silicon dioxide surfaces; treating to form hydrophobic silicon surface; joining substrates; heat treating; removing part of substratre to sandwitch silicon dioxide layer
12/05/2000US6156622 Bipolar transistor having isolation regions
12/05/2000US6156621 Method for fabricating direct wafer bond Si/SiO2 /Si substrates
12/05/2000US6156617 Method of manufacturing semiconductor device
12/05/2000US6156616 Method for fabricating an NPN transistor in a BICMOS technology
12/05/2000US6156613 Method to form MOSFET with an elevated source/drain
12/05/2000US6156611 Method of fabricating vertical FET with sidewall gate electrode
12/05/2000US6156595 Method of fabricating a Bi-CMOS IC device including a self-alignment bipolar transistor capable of high speed operation
12/05/2000US6156592 Method of manufacturing a semiconductor device containing CMOS elements
12/05/2000US6156590 Method for producing semiconductor device
12/05/2000US6156589 Compact SOI body contact link
12/05/2000US6156586 Method for producing a microelectronic sensor
12/05/2000US6156585 Semiconductor component and method of manufacture
12/05/2000US6155537 Deep submicron MOS transistors with a self-aligned gate electrode
12/05/2000US6155247 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
11/2000
11/30/2000WO2000072384A1 Pre-equilibrium chemical reaction energy converter
11/30/2000WO2000072383A1 Improved optoelectronic device
11/30/2000WO2000072382A1 Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing
11/30/2000WO2000072379A1 Thermal capacity for electronic component operating in long pulses
11/30/2000WO2000072372A1 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
11/30/2000WO2000072360A2 Junction insulated lateral mosfet for high/low side switches
11/30/2000WO2000072359A2 Source-down power transistor
11/30/2000WO2000071787A2 Semi-insulating silicon carbide without vanadium domination
11/30/2000DE19924571A1 Verfahren zur Herstellung eines Doppel-Gate-MOSFET-Transistors A method for producing a double gate MOSFET transistor
11/30/2000DE19923522A1 Source-Down-Leistungstransistor Source-down power transistor
11/30/2000DE19923466A1 Junctionsisolierter Lateral-MOSFET für High-/Low-Side-Schalter Junction Insulated Lateral MOSFET for high / low-side switch
11/30/2000DE10021643A1 Semiconductor of an MIS-type has a structure that stabilizes breakdown voltage and reduces resistance
11/30/2000CA2398287A1 Improved optoelectronic device
11/29/2000EP1056135A1 Field-effect transistor and method of manufacturing same
11/29/2000EP1056134A2 Trench-gated device having trench walls formed by selective epitaxial growth and process for forming the device
11/29/2000EP1056125A2 Lead germanate ferroelectric structure with multi-layered electrode
11/29/2000EP1056025A2 Simultation method of breakdown in impact ionization
11/29/2000EP1055920A1 Semiconductor pressure sensor and its manufacturing method
11/29/2000CN2408573Y Low temperature (normal temperature) field effect gas sensitive element
11/29/2000CN1059054C 半导体器件 Semiconductor devices
11/28/2000US6154580 Tactile sensor and fingerprint sensor using same
11/28/2000US6154475 Silicon-based strain-symmetrized GE-SI quantum lasers
11/28/2000US6154391 Nonvolatile semiconductor memory device
11/28/2000US6154264 Reflective liquid crystal display with gate covering semiconductor and reflector isolated from pixel electrode
11/28/2000US6154091 SOI sense amplifier with body contact structure
11/28/2000US6154087 Sensor output compensation circuit
11/28/2000US6153921 Diode device
11/28/2000US6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby
11/28/2000US6153919 Bipolar transistor with polysilicon dummy emitter
11/28/2000US6153917 Semiconductor acceleration sensor and manufacturing method thereof
11/28/2000US6153916 MOS transistor with high output voltage endurance
11/28/2000US6153915 CMOS semiconductor device
11/28/2000US6153912 SOI with conductive metal substrate used as VSS connection
11/28/2000US6153910 Semiconductor device with nitrogen implanted channel region
11/28/2000US6153909 Semiconductor device and method for fabricating the same
11/28/2000US6153908 Buried-gate semiconductor device with improved level of integration
11/28/2000US6153907 IC layout structure for MOSFET having narrow and short channel
11/28/2000US6153905 Semiconductor component including MOSFET with asymmetric gate electrode where the drain electrode over portions of the lightly doped diffusion region without a gate dielectric
11/28/2000US6153904 Fabrication method for increasing the coupling efficiency of ETOX flash memory devices
11/28/2000US6153901 Integrated circuit capacitor including anchored plug
11/28/2000US6153898 Ferroelectric capacitor, method of manufacturing same and memory cell using same
11/28/2000US6153896 Semiconductor device and control method thereof
11/28/2000US6153893 Thin film semiconductor device for display
11/28/2000US6153892 Semiconductor device and method for manufacture thereof
11/28/2000US6153538 Method of making MOSFET with ultra-thin gate oxide
11/28/2000US6153534 Method for fabricating a dual material gate of a short channel field effect transistor
11/28/2000US6153520 Vapor deposition
11/28/2000US6153500 Atomic wire and atomic wire switch
11/28/2000US6153499 Method of manufacturing semiconductor device
11/28/2000US6153488 Method for producing semiconductor device, and semiconductor device produced by same
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