Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2000
11/28/2000US6153484 Controlling the etching rate of cobalt disilicide layers by adjusting the ph of a hydrofluoric acid based solution to obtain the desired etch rate
11/28/2000US6153483 Overcoating with silicon nitride; anisotropic and isotropic etching
11/28/2000US6153477 Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant
11/28/2000US6153473 Method of symmetrically implanted punch-through stopper for a rugged DMOS power device
11/28/2000US6153470 Floating gate engineering to improve tunnel oxide reliability for flash memory devices
11/28/2000US6153463 Triple plate capacitor and method for manufacturing
11/28/2000US6153454 Convex device with selectively doped channel
11/28/2000US6153452 Method of manufacturing semiconductor devices having improved polycide integrity through introduction of a silicon layer within the polycide structure
11/28/2000US6153451 Transistor with increased operating voltage and method of fabrication
11/28/2000US6153448 Overcoating source, drain and gate zones; positioning silicon dioxide spacer between drains and gate; etching
11/28/2000US6153445 Doping amophous silicon film; crystallization
11/28/2000US6151966 Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure
11/28/2000CA2303471A1 Field-effect transistor and method of manufacturing same
11/23/2000WO2000070686A1 Semiconductor device, image display device, and method and apparatus for manufacture thereof
11/23/2000WO2000070685A1 Ferroelectric memory with disturb protection
11/23/2000WO2000070684A2 Silicon carbide power devices comprising charge coupling regions
11/23/2000WO2000070683A1 Semiconductor memory
11/23/2000WO2000070681A1 Improved rf power transistor
11/23/2000WO2000070675A1 Semiconductor memory device
11/23/2000WO2000070654A2 Low-resistance vdmos semiconductor component
11/23/2000DE19923520C1 Semiconductor element edge structure
11/23/2000DE19922187A1 Low ohmic VDMOS semiconductor element has a region of different conducting type than the base in the base of a trench
11/23/2000DE10022800A1 Schottky semiconductor element has a semiconductor stacking layer with an edge that reaches the protective ring
11/23/2000CA2373752A1 Improved rf power transistor
11/22/2000EP1054453A2 Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
11/22/2000EP1054452A2 TFT and method for its fabrication
11/22/2000EP1054451A2 MOS-gated power device having extended trench and doping zone and process for forming same
11/22/2000EP1054450A2 MOSFET semiconductor device with highly doped barrier region
11/22/2000EP1054441A2 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for its fabrication
11/22/2000EP1054440A2 Composite iridium barrier structure with oxidized refractory metal companion barrier and method for its fabrication
11/22/2000EP1054406A2 Ferroelectric non-volatile memory device
11/22/2000EP1053574A2 Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
11/22/2000EP1053567A1 Lateral thin-film silicon-on-insulator (soi) jfet device
11/22/2000EP0963586A4 A scalable flash eeprom memory cell, method of manufacturing and operation thereof
11/22/2000CN1058809C Method for producing CMOS transistor
11/21/2000US6151561 Method of estimating lifetime of floating SOI-MOSFET
11/21/2000US6151254 Non-volatile semiconductor memory device and data erase method of non-volatile semiconductor memory device
11/21/2000US6151252 Nonvolatile semiconductor memory device
11/21/2000US6151249 NAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistors
11/21/2000US6151245 Screened EEPROM cell
11/21/2000US6151244 Dynamic semiconductor memory device
11/21/2000US6151242 Semiconductor memory device
11/21/2000US6151241 Ferroelectric memory with disturb protection
11/21/2000US6151240 Ferroelectric nonvolatile memory and oxide multi-layered structure
11/21/2000US6150917 Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method
11/21/2000US6150722 Ldmos transistor with thick copper interconnect
11/21/2000US6150702 Lateral high-voltage semiconductor device having an outwardly extended electrode
11/21/2000US6150701 Insulative guard ring for a semiconductor device
11/21/2000US6150698 Semiconductor device and method of forming semiconductor device having non-uniformly doped well
11/21/2000US6150697 Semiconductor apparatus having high withstand voltage
11/21/2000US6150694 Silicon-on-insulator insulated gate bipolar transistor
11/21/2000US6150693 Short channel non-self aligned VMOS field effect transistor
11/21/2000US6150692 Thin film semiconductor device for active matrix panel
11/21/2000US6150688 Semiconductor device and method of manufacturing the same
11/21/2000US6150684 Thin-film capacitor and method of producing same
11/21/2000US6150680 Field effect semiconductor device having dipole barrier
11/21/2000US6150675 Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure
11/21/2000US6150671 Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
11/21/2000US6150670 Process for fabricating a uniform gate oxide of a vertical transistor
11/21/2000US6150668 Thin-film transistor monolithically integrated with an organic light-emitting diode
11/21/2000US6150286 Forming thin oxide interface by concurrent annealing in ammonia and nitrous oxide
11/21/2000US6150283 Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device
11/21/2000US6150276 Method for fabricating metal-oxide semiconductor transistor
11/21/2000US6150254 Method for wiring of a semiconductor device
11/21/2000US6150251 Sandwiching polysilicon between amorphous layers; patterning, doping
11/21/2000US6150250 Laminating tungsten silicide; forming titanium nitride or oxynitride antireflection layer; photolithography
11/21/2000US6150249 Siliciding, alloying, anneling
11/21/2000US6150246 Doping, annealing; heat resistant
11/21/2000US6150245 Method of manufacturing a field effect transistor
11/21/2000US6150241 Method for producing a transistor with self-aligned contacts and field insulation
11/21/2000US6150225 Method for fabricating a semiconductor device having vertical and lateral type bipolar transistors
11/21/2000US6150224 Method of manufacturing a semiconductor device with a bipolar transistor
11/21/2000US6150222 Method of making a high performance transistor with elevated spacer formation and self-aligned channel regions
11/21/2000US6150221 Semiconductor device and method for manufacturing same
11/21/2000US6150220 Insulation layer structure and method for making the same
11/21/2000US6150219 Method for fabricating a high bias device
11/21/2000US6150206 Methods of forming integrated circuit capacitors using trench isolation and planarization techniques
11/21/2000US6150203 Method for manufacturing a semiconductor device
11/21/2000US6150202 Method for fabricating semiconductor device
11/21/2000US6150201 Methods of forming top-gated thin film field effect transistors
11/21/2000US6150200 Semiconductor device and method of making
11/21/2000US6150191 Method of making an organic thin film transistor and article made by the method
11/21/2000US6150185 Methods of manufacturing and testing integrated circuit field effect transistors using scanning electron microscope to detect undesired conductive material
11/21/2000US6150184 Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor
11/21/2000US6149316 Flash EEprom system
11/16/2000WO2000068998A1 High voltage mosfet structures
11/16/2000WO2000068997A1 Mosfet with field reducing trenches in body region
11/16/2000WO2000068987A1 Semiconductor device and method of manufacturing semiconductor device
11/16/2000WO2000068984A1 Method for cleaning a silicon substrate surface and use for making integrated electronic components
11/16/2000WO2000068982A1 Fabrication of ohmic contacts to inp using non- stoichiometric inp layers
11/16/2000WO2000068981A1 Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine
11/16/2000WO2000068952A1 Ramped or stepped gate channel erase for flash memory application
11/16/2000WO2000068474A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND SiC WAFER PRODUCTION METHOD
11/16/2000WO2000033386A3 Trench-gate semiconductor devices and their manufacture
11/16/2000WO2000017919A3 Method for producing an ohmic contact
11/16/2000DE4345276C2 Flash EEPROM preventing excessive erasure
11/15/2000EP1052701A2 Capacitor, semiconductor device, and manufacturing method thereof
11/15/2000EP1052700A1 Semiconductor TFT device and method of fabricating same
11/15/2000EP1052699A1 Semiconductor device and fabrication method therefor
11/15/2000EP1052693A2 Improved integrated-circuit isolation structure and method for forming the same
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