Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2000
12/13/2000EP1059672A2 High withstand voltage semiconductor device and method of manufacturing the same
12/13/2000EP1059666A1 Monolithic semiconductor integrated circuit device
12/13/2000EP1059663A2 Process for producing a semiconductor thin film with a bonding and separating steps, solar cell fabrication and anodizing apparatus
12/13/2000EP1058949A1 Quasi-mesh gate structure including plugs connecting source regions with backside for lateral rf mos devices
12/13/2000EP1058948A1 Field effect semiconductor device having dipole barrier
12/13/2000CN1276630A Semiconductor device and its mfg. method
12/13/2000CN1276628A Semiconductor device and its mfg. method
12/13/2000CN1276623A Method for providing double work function doping and protection insulation cap
12/13/2000CN1059518C Method for mfg. film transistor
12/12/2000US6160739 Non-volatile memories with improved endurance and extended lifetime
12/12/2000US6160598 Liquid crystal display and a method for fabricating thereof
12/12/2000US6160306 Diode of semiconductor device and method for manufacturing the same
12/12/2000US6160304 Semiconductor device comprising a half-bridge circuit
12/12/2000US6160301 Gate structure
12/12/2000US6160300 Multi-layer gate conductor having a diffusion barrier in the bottom layer
12/12/2000US6160299 Shallow-implant elevated source/drain doping from a sidewall dopant source
12/12/2000US6160297 Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines
12/12/2000US6160293 Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers
12/12/2000US6160291 SOI-MOS field effect transistor with improved source/drain structure
12/12/2000US6160290 Reduced surface field device having an extended field plate and method for forming the same
12/12/2000US6160289 RESURF EDMOS transistor and high-voltage analog multiplexer circuit using the same
12/12/2000US6160288 Vertical type misfet having improved pressure resistance
12/12/2000US6160286 Method for operation of a flash memory using n+/p-well diode
12/12/2000US6160280 Field effect transistor
12/12/2000US6160278 Hydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensor
12/12/2000US6160274 Reduced 1/f low frequency noise high electron mobility transistor
12/12/2000US6160272 Self-light-emitting apparatus and semiconductor device used in the apparatus
12/12/2000US6160271 Semiconductor thin film and semiconductor device
12/12/2000US6160270 Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix incorporating the transistors, including active matrix displays
12/12/2000US6160269 Thin film semiconductor integrated circuit
12/12/2000US6160268 Semiconductor device and manufacturing method thereof
12/12/2000US6159868 Method of forming a high quality layer of BST
12/12/2000US6159861 Method of manufacturing semiconductor device
12/12/2000US6159856 Method of manufacturing a semiconductor device with a silicide layer
12/12/2000US6159852 Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
12/12/2000US6159841 Method of fabricating lateral power MOSFET having metal strap layer to reduce distributed resistance
12/12/2000US6159835 Encapsulated low resistance gate structure and method for forming same
12/12/2000US6159831 Process to prepare an array of wires with submicron diameters
12/12/2000US6159830 Process for adjusting the carrier lifetime in a semiconductor component
12/12/2000US6159829 Memory device using movement of protons
12/12/2000US6159816 Method of fabricating a bipolar transistor
12/12/2000US6159815 Method of producing a MOS transistor
12/12/2000US6159814 Spacer formation by poly stack dopant profile design
12/12/2000US6159813 Graded LDD implant process for sub-half-micron MOS devices
12/12/2000US6159810 Methods of fabricating gates for integrated circuit field effect transistors including amorphous impurity layers
12/12/2000US6159809 Method for manufacturing surface channel type P-channel MOS transistor while suppressing P-type impurity penetration
12/12/2000US6159807 Self-aligned dynamic threshold CMOS device
12/12/2000US6159805 Semiconductor electronic device with autoaligned polysilicon and silicide control terminal
12/12/2000US6159801 Method to increase coupling ratio of source to floating gate in split-gate flash
12/12/2000US6159800 Method of forming a memory cell
12/12/2000US6159799 Method of manufacturing semiconductor device comprising high voltage regions and floating gates
12/12/2000US6159797 Method of fabricating a flash memory with a planarized topography
12/12/2000US6159796 Method of forming a non-volatile memory cell having a high coupling capacitance including forming an insulator mask, etching the mask, and forming a u-shaped floating gate
12/12/2000US6159783 Semiconductor device having MOS transistor and method of manufacturing the same
12/12/2000US6159781 Way to fabricate the self-aligned T-shape gate to reduce gate resistivity
12/12/2000US6159780 Method of fabricating semiconductor device on SOI substrate
12/12/2000US6159779 Multi-layer gate for TFT and method of fabrication
12/12/2000US6159778 Methods of forming semiconductor-on-insulator field effect transistors with reduced floating body parasitics
12/12/2000US6159777 Method of forming a TFT semiconductor device
12/12/2000US6159776 Method for manufacturing semiconductor device
12/12/2000US6159770 Method and apparatus for fabricating semiconductor device
12/12/2000US6159762 Process for producing micromechanical sensors
12/12/2000US6159761 Method of manufacturing a force sensor having an electrode which changes resistance or electrostatic capacitance in response to force
12/12/2000US6159752 Method of forming para-dielectric and ferro-dielectric capacitors over a silicon substrate
12/12/2000US6159620 Single-electron solid state electronic device
12/12/2000US6158911 Method and apparatus for insertion and retainment of pomade within a dispenser
12/12/2000US6158283 Semiconductor acceleration sensor
12/12/2000CA2166228C A power integrated circuit
12/07/2000WO2000074146A1 Power semiconductor devices having an insulating layer formed in a trench
12/07/2000WO2000074145A1 LOW TURN-ON VOLTAGE InP SCHOTTKY DEVICE AND METHOD FOR MAKING THE SAME
12/07/2000WO2000074144A1 Current controlled field effect transistor
12/07/2000WO2000074143A1 Double gate mosfet transistor and method for the production thereof
12/07/2000WO2000074141A1 High cell density power rectifier
12/07/2000WO2000074139A1 A single polysilicon flash eeprom and method for making same
12/07/2000WO2000074130A1 Discrete schottky diode device with reduced leakage current
12/07/2000WO2000074129A1 Collector-up rf power transistor
12/07/2000WO2000074126A1 A method of manufacturing a semiconductor device
12/07/2000WO2000074121A1 Method to produce high density memory cells and small spaces by using nitride spacer
12/07/2000WO2000074068A1 Method and apparatus for providing an embedded flash-eeprom technology
12/07/2000DE19925044A1 Semiconductor disc with crystal matrix defects has upper and lower surface layers separated by upper and lower internal layers with central region between them having maximum nitrogen concentration
12/07/2000DE19924151A1 Semiconductor integrated circuit with differential amplifier, e.g. for DRAM
12/07/2000DE10027234A1 Microsensor has micro electro-mechanical sensor element mounted directly on integrated circuit, connected with positional accuracy and electrically conductively via peripheral solder seam
12/07/2000CA2373602A1 Current controlled field effect transistor
12/07/2000CA2373580A1 Collector-up rf power transistor
12/06/2000EP1058319A2 Method for stabilizing SOI semiconductor device and SOI semiconductor device
12/06/2000EP1058318A1 Power semiconductor device having an edge termination structure comprising a voltage divider
12/06/2000EP1058317A2 Low voltage dual-well MOS device
12/06/2000EP1058316A1 Power MOS transistor
12/06/2000EP1058315A1 Edge termination of semiconductor devices for high voltages with capacitive voltage divider
12/06/2000EP1058314A2 Method for manufacturing an electro-optical device
12/06/2000EP1058311A2 Electro-optical device and electronic device
12/06/2000EP1058309A1 Process for manufacturing electronic devices comprising nonvolatile memory cells with dimensional control of the floating gate regions
12/06/2000EP1058303A1 Fabrication of VDMOS structure with reduced parasitic effects
12/06/2000EP1058302A1 Method of manufacturing bipolar devices having self-aligned base-emitter junction
12/06/2000EP1058299A1 Process for manufacturing electronic devices comprising nonvolatile memory cells with dimensional control of the floating gate regions
12/06/2000EP1058298A1 Method of manufacturing a semiconductor memory device having a capacitor
12/06/2000EP1058294A1 Compound semiconductor field effect transistor and method for the fabrication thereof
12/06/2000EP1057218A1 A method of manufacturing a semiconductor device
12/06/2000EP1057215A1 Method for producing cmos transistors and related devices
12/06/2000CN1276089A Dielectric element and manufacturing method therefor
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