Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2000
12/26/2000US6165848 Method for the production of a MOS-controlled power semiconductor component
12/26/2000US6165847 Nonvolatile semiconductor memory device and method for manufacturing the same
12/26/2000US6165846 Method of eliminating gate leakage in nitrogen annealed oxides
12/26/2000US6165845 Method to fabricate poly tip in split-gate flash
12/26/2000US6165844 Method for forming a textured surface on a semiconductor substrate and a tunneling oxide layer on the textured surface
12/26/2000US6165843 Covered slit isolation between integrated circuit devices
12/26/2000US6165842 Method for fabricating a non-volatile memory device using nano-crystal dots
12/26/2000US6165837 Semiconductor integrated memory manufacturing method and device
12/26/2000US6165835 Method for producing a silicon capacitor
12/26/2000US6165829 Thin film transistor and fabrication method therefor
12/26/2000US6165828 Structure and method for gated lateral bipolar transistors
12/26/2000US6165827 Semiconductor transistor devices and methods for forming semiconductor transistor devices
12/26/2000US6165826 Transistor with low resistance tip and method of fabrication in a CMOS process
12/26/2000US6165825 Semiconductor device and method for producing the same
12/26/2000US6165823 Thin film transistor and a fabricating method therefor
12/26/2000US6165822 Silicon carbide semiconductor device and method of manufacturing the same
12/26/2000US6165821 P channel radhard device with boron diffused P-type polysilicon gate
12/26/2000US6165815 Method of fabrication of stacked semiconductor devices
12/26/2000US6165813 Replacing semiconductor chips in a full-width chip array
12/26/2000US6165810 Method of manufacturing semiconductor device and display device
12/26/2000US6165802 Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation
12/26/2000US6165622 Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film
12/26/2000US6165265 Method of deposition of a single-crystal silicon region
12/26/2000US6164781 High temperature transistor with reduced risk of electromigration and differently shaped electrodes
12/26/2000US6164516 Soldering apparatus and method
12/21/2000WO2000077859A1 Semiconductor device
12/21/2000WO2000077858A1 Ferroelectric transistor and method of operating same
12/21/2000WO2000077857A1 Ferroelectric transistor and method of producing same
12/21/2000WO2000077856A1 Semiconductor device with compensated threshold voltage and method for making same
12/21/2000WO2000077855A1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
12/21/2000WO2000077838A1 Non-volatile semiconductor memory cell and method for its production
12/21/2000WO2000077834A2 Modelling electrical characteristics of thin film transistors
12/21/2000WO2000077832A2 Metal oxide thin films for high dielectric constant applications
12/21/2000WO2000077828A2 Method of manufacturing a variable work function gate mosfet using a dummy gate
12/21/2000WO2000077533A2 Semiconductor device simulation method and simulator
12/21/2000WO2000051167A3 Monolithically integrated trench mosfet and schottky diode
12/21/2000WO2000039858A3 Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
12/21/2000DE19961776A1 Pressure sensor device for acting as a fixing structure for a sensor module includes a sensor element fitted on the surface of a sensor module and a groove area formed in an upper or lower casing.
12/21/2000DE19935442C1 Power trench-metal oxide semiconductor transistor is produced using a temporary layer to allow formation of a trench insulating film which is thicker at the trench lower end than at the trench upper end
12/21/2000DE19926767A1 Ferroelektrischer Transistor und Verfahren zu dessen Herstellung Ferroelectric transistor and method of producing the
12/21/2000DE19926766A1 Ferroelektrischer Transistor und Verfahren zu dessen Betrieb Ferroelectric transistor and method of operation
12/21/2000DE19925880A1 Avalanche-proof MOS-transistor structure
12/21/2000DE10024510A1 Heterojunction-type field effect transistor for portable telephone, has gate electrode formed over p-type low resistance area of barrier layer inbetween source and drain electrodes
12/21/2000DE10012897A1 Field effect transistor has main gate formed between side gate on semiconductor substrate, and source and drain impurity area formed at both sides on side gate of semiconductor substrate
12/20/2000EP1061584A2 Self-supported ultra thin silicon wafer process
12/20/2000EP1061568A1 Self-aligned method of manufacturing bipolar transistors
12/20/2000EP1061358A2 Apparatus and method for reviewing defects on an object
12/20/2000EP1060522A1 Display devices
12/20/2000EP1060519A1 Mos transistor memory cell and method for producing the same
12/20/2000EP1060518A1 Trench-gate mos transistor, its use in an eeprom device and process for manufacturing the same
12/20/2000EP1060517A1 Bipolar transistor with an insulated gate electrode
12/20/2000EP1060516A1 Display devices
12/20/2000EP1060515A1 Electrically programmable memory cell arrangement and method for producing the same
12/20/2000EP1060514A1 Field isolated integrated injection logic gate
12/20/2000EP0710357B1 Dielectrically isolated resonant microsensor
12/20/2000CN1277460A Nonvolatile semi-conductor storage and its producing method
12/19/2000US6163482 One transistor EEPROM cell using ferro-electric spacer
12/19/2000US6163481 Flash memory wordline tracking across whole chip
12/19/2000US6163352 Active matrix substrated, liquid crystal apparatus using the same the display apparatus using such liquid crystal apparatus
12/19/2000US6163060 Semiconductor device with a composite gate dielectric layer and gate barrier layer and method of making same
12/19/2000US6163057 Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
12/19/2000US6163055 Semiconductor device and manufacturing method thereof
12/19/2000US6163053 Semiconductor device having opposite-polarity region under channel
12/19/2000US6163052 Trench-gated vertical combination JFET and MOSFET devices
12/19/2000US6163051 High breakdown voltage semiconductor device
12/19/2000US6163050 Semiconductor device having insulation film whose breakdown voltage is improved and its manufacturing method
12/19/2000US6163049 Method of forming a composite interpoly gate dielectric
12/19/2000US6163041 Field effect transistor and method of manufacturing the same
12/19/2000US6163040 Thyristor manufacturing method and thyristor
12/19/2000US6162741 Semiconductor device and manufacturing method therefor
12/19/2000US6162721 Semiconductor processing methods
12/19/2000US6162717 Method of manufacturing MOS gate utilizing a nitridation reaction
12/19/2000US6162716 Amorphous silicon gate with mismatched grain-boundary microstructure
12/19/2000US6162715 Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
12/19/2000US6162710 Method for making MIS transistor
12/19/2000US6162704 Method of making semiconductor device
12/19/2000US6162702 Self-supported ultra thin silicon wafer process
12/19/2000US6162695 Field ring to improve the breakdown voltage for a high voltage bipolar device
12/19/2000US6162693 Channel implant through gate polysilicon
12/19/2000US6162689 Multi-depth junction formation tailored to silicide formation
12/19/2000US6162688 Method of fabricating a transistor with a dielectric underlayer and device incorporating same
12/19/2000US6162687 Method of manufacturing semiconductor device having oxide-nitride gate insulating layer
12/19/2000US6162684 Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices
12/19/2000US6162676 Method of making a semiconductor device with an etching stopper
12/19/2000US6162669 Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer
12/19/2000US6162668 Method of manufacturing a semiconductor device having a lightly doped contact impurity region surrounding a highly doped contact impurity region
12/19/2000US6162665 High voltage transistors and thyristors
12/14/2000WO2000076200A1 Solid-state imaging device, method for driving the same, and image input device
12/14/2000WO2000075999A1 Variable capacitance, low pass filter and micro-electromechanical switching arrangement
12/14/2000WO2000075998A1 Connection arrangement for a semiconductor device and method of manufacturing same
12/14/2000WO2000075994A1 Semiconductor device with a non-volatile memory
12/14/2000WO2000075989A1 Semiconductor device comprising a high-voltage circuit element
12/14/2000WO2000075967A2 Method for fabrication of a low resistivity mosfet gate with thick metal silicide on polysilicon
12/14/2000WO2000075966A2 Dual epitaxial layer for high voltage vertical conduction power mosfet devices
12/14/2000WO2000075965A2 Power mosfet and method of making the same
12/14/2000WO2000075963A2 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor
12/14/2000WO2000075856A1 Unitary package identification and dimensioning system employing ladar-based scanning methods
12/14/2000CA2696270A1 Nitride semiconductor device
12/14/2000CA2671386A1 Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
12/13/2000EP1059673A2 Semiconductor memory and method of operating semiconductor memory
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