| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/02/2001 | US6169300 Insulated gate bipolar transistor with high dynamic ruggedness |
| 01/02/2001 | US6169299 Semiconductor device |
| 01/02/2001 | US6169293 Display device |
| 01/02/2001 | US6169292 Thin film type monolithic semiconductor device |
| 01/02/2001 | US6169019 Semiconductor apparatus and manufacturing method therefor |
| 01/02/2001 | US6169017 Method to increase contact area |
| 01/02/2001 | US6169014 Laser crystallization of thin films |
| 01/02/2001 | US6169013 Method of optimizing crystal grain size in polycrystalline silicon films |
| 01/02/2001 | US6169006 Semiconductor device having grown oxide spacers and method of manufacture thereof |
| 01/02/2001 | US6169003 Method for forming a MOS device with an elevated source and drain, and having a self-aligned channel input |
| 01/02/2001 | US6169001 CMOS device with deep current path for ESD protection |
| 01/02/2001 | US6168999 Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain |
| 01/02/2001 | US6168996 Method of fabricating semiconductor device |
| 01/02/2001 | US6168995 Method of fabricating a split gate memory cell |
| 01/02/2001 | US6168994 Method of making memory device with an element splitting trench |
| 01/02/2001 | US6168990 Method for fabricating Dram cell capacitor |
| 01/02/2001 | US6168983 Method of making a high-voltage transistor with multiple lateral conduction layers |
| 01/02/2001 | US6168982 Manufacture of electronic devices comprising thin-film circuit elements |
| 01/02/2001 | US6168981 Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
| 01/02/2001 | US6168980 Semiconductor device and method for forming the same |
| 01/02/2001 | US6168979 Method for fabricating semiconductor device |
| 01/02/2001 | US6168978 Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate |
| 01/02/2001 | US6168974 Process of mounting spring contacts to semiconductor devices |
| 01/02/2001 | US6168678 Method and device for stacking substrates which are to be joined by bonding |
| 01/02/2001 | US6168659 Forming an amorphous silicon dioxide thin film on a silicon substrate, forming a single crystal silicon thin film on said silicon dioxide thin film and then forming gallium nitride directly on said silicon thin film. |
| 01/02/2001 | CA2186796C Power semiconductor device |
| 01/02/2001 | CA2172233C Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
| 01/02/2001 | CA2034663C Method and apparatus for semiconductor chip transducer |
| 12/28/2000 | WO2000079617A1 Aligned polymers for an organic tft |
| 12/28/2000 | WO2000079603A1 Diamond semiconductor device and method of manufacture thereof |
| 12/28/2000 | WO2000079602A1 Multi-channel mosfet and method for producing the same |
| 12/28/2000 | WO2000079601A1 Semiconductor device and method of manufacture thereof |
| 12/28/2000 | WO2000079600A1 SINGLE HETEROJUNCTION InP-COLLECTOR BJT DEVICE AND METHOD |
| 12/28/2000 | WO2000079599A1 InGaAsN/GaAs QUANTUM WELL DEVICES |
| 12/28/2000 | WO2000079586A1 Production method for semiconductor integrated circuit device and semiconductor integrated circuit device |
| 12/28/2000 | WO2000079584A1 Semiconductor and manufacturing method for semiconductor |
| 12/28/2000 | WO2000079581A2 Improving mosfet performance by employing an improved method for forming halo implants |
| 12/28/2000 | WO2000079570A2 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 12/28/2000 | WO2000033373A3 Method of manufacturing a semiconductor device comprising a bipolar transistor |
| 12/28/2000 | WO2000017937A3 Method for producing a semiconductor component |
| 12/28/2000 | DE19929028A1 Completing pressure sensor by injection-molding around sensor assembly, is assisted by clamping lead frame mounting section in injection mold during injection of casing |
| 12/28/2000 | DE19929026A1 Manufacture of pressure sensor by injection molding over semiconductor mounting assembly and lead frame with clearance, employs plunger locally controlling temperature of duroplastic mass |
| 12/28/2000 | DE19928917A1 Pressure sensor has pressure connector as separate moulded part manufactured independently of sensor housing with output connected to opening in sensor housing |
| 12/28/2000 | DE19928297A1 Production of a sensor with a membrane comprises depositing a silicon nitride layer by a LPCVD or PECVD process on a surface of a silicon substrate, and etching a recess from the underside of the substrate |
| 12/28/2000 | CA2374236A1 Aligned polymers for an organic tft |
| 12/28/2000 | CA2374203A1 Semiconductor and manufacturing method for semiconductor |
| 12/27/2000 | EP1063709A2 Method of fabricating a surface coupled InGaAs photodetector |
| 12/27/2000 | EP1063705A2 Field effect transistor having high breakdown withstand capacity |
| 12/27/2000 | EP1063704A2 EL display device, driving method thereof, and electronic equipment provided with the EL display device |
| 12/27/2000 | EP1063701A2 Backmetal drain terminal with low stress and thermal resistance |
| 12/27/2000 | EP1063697A1 A cmos integrated circuit having vertical transistors and a process for fabricating same |
| 12/27/2000 | EP1063694A1 Process for fabricating vertical transistors |
| 12/27/2000 | EP1063693A1 Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device |
| 12/27/2000 | EP1062700A1 Power semiconductor structural part with a mesa edge |
| 12/27/2000 | EP1062692A1 Devices formable by low temperature direct bonding |
| 12/27/2000 | EP1062684A2 Trench isolation for micromechanical devices |
| 12/27/2000 | EP1008177A4 Improved active matrix esd protection and testing scheme |
| 12/27/2000 | CN1278110A Electroluminescent display element, driving method and electronic device therewith |
| 12/27/2000 | CN1278109A Electrooptical device and electronic device |
| 12/26/2000 | USRE36998 Circuit for limiting the output voltage of a power transistor |
| 12/26/2000 | US6166869 Method and circuit for enabling rapid flux reversal in the coil of a write head associated with a computer disk drive, or the like |
| 12/26/2000 | US6166794 Liquid crystal device including gate insulating film and layer insulating film having different dielectric constants |
| 12/26/2000 | US6166786 Semiconductor element with N channel and P region connected only to the channel and liquid crystal display device using the same |
| 12/26/2000 | US6166785 Thin film transistor and fabricating method thereof having patterned active layer |
| 12/26/2000 | US6166726 Circuit for driving a liquid crystal display |
| 12/26/2000 | US6166713 Active matrix display device |
| 12/26/2000 | US6166584 Forward biased MOS circuits |
| 12/26/2000 | US6166445 Semiconductor device and method for producing same |
| 12/26/2000 | US6166426 Lateral bipolar transistors and systems using such |
| 12/26/2000 | US6166420 Method and structure of high and low K buried oxide for SoI technology |
| 12/26/2000 | US6166419 Semiconductor memory device |
| 12/26/2000 | US6166418 High-voltage SOI thin-film transistor |
| 12/26/2000 | US6166417 Complementary metal gates and a process for implementation |
| 12/26/2000 | US6166414 Electronic circuit |
| 12/26/2000 | US6166412 SOI device with double gate and method for fabricating the same |
| 12/26/2000 | US6166411 Heat removal from SOI devices by using metal substrates |
| 12/26/2000 | US6166410 MONOS flash memory for multi-level logic and method thereof |
| 12/26/2000 | US6166409 Flash EPROM memory cell having increased capacitive coupling |
| 12/26/2000 | US6166404 Semiconductor device in which at least two field effect transistors having different threshold voltages are formed on a common base |
| 12/26/2000 | US6166402 Pressure-contact type semiconductor element and power converter thereof |
| 12/26/2000 | US6166401 Flash memory with microcrystalline silicon carbide film floating gate |
| 12/26/2000 | US6166400 Thin film transistor of liquid crystal display with amorphous silicon active layer and amorphous diamond ohmic contact layers |
| 12/26/2000 | US6166399 Active matrix device including thin film transistors |
| 12/26/2000 | US6166398 Thin film transistors |
| 12/26/2000 | US6166397 Display device with inverted type transistors in the peripheral and pixel portions |
| 12/26/2000 | US6166396 Semiconductor devices |
| 12/26/2000 | US6165917 Plasma-enhanced chemical vapor depositiin of a layer of ammonia-free silicon nitride between the copper, aluminum, or other refractory metal gate and the gate insulator of a thin film transistor (tft) for use in a liquid crystal display |
| 12/26/2000 | US6165916 Film-forming method and film-forming apparatus |
| 12/26/2000 | US6165913 Manufacturing method for spacer |
| 12/26/2000 | US6165908 Single-layer-electrode type charge coupled device having double conductive layers for charge transfer electrodes |
| 12/26/2000 | US6165884 Method of forming gate electrode in semiconductor device |
| 12/26/2000 | US6165883 Method for forming multilayer sidewalls on a polymetal stack gate electrode |
| 12/26/2000 | US6165882 Polysilicon gate having a metal plug, for reduced gate resistance, within a trench extending into the polysilicon layer of the gate |
| 12/26/2000 | US6165878 Method of manufacturing semiconductor device |
| 12/26/2000 | US6165876 Method of doping crystalline silicon film |
| 12/26/2000 | US6165872 Semiconductor device and its manufacturing method |
| 12/26/2000 | US6165860 Semiconductor device with reduced photolithography steps |
| 12/26/2000 | US6165859 Method for making InP heterostructure devices |
| 12/26/2000 | US6165857 Method for forming a transistor with selective epitaxial growth film |
| 12/26/2000 | US6165851 Semiconductor nonvolatile storage and method of fabricating the same |