| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/11/2001 | CA2372707A1 Nanoscopic wire-based devices, arrays, and method of their manufacture |
| 01/10/2001 | EP1067607A2 An insulated gate transistor and the method of manufacturing the same |
| 01/10/2001 | EP1067597A2 Transitors with low overlap capacitance |
| 01/10/2001 | EP1067596A2 Process for forming vertical semiconductor device having increased source contact area |
| 01/10/2001 | EP1067593A2 Semiconductor thin film forming system |
| 01/10/2001 | EP1067557A1 Flash compatible EEPROM |
| 01/10/2001 | EP1066652A2 Trench-gate semiconductor devices and their manufacture |
| 01/10/2001 | EP1066416A1 Passivating etchants for metallic particles |
| 01/10/2001 | CN1279822A Semiconductor device and manufacture thereof |
| 01/10/2001 | CN1279765A Method for detecting current of spin polarized electrons in solid body |
| 01/10/2001 | CN1279517A Twin film field effect transistors and use thereof |
| 01/10/2001 | CN1279516A Semiconductor device and manufacture thereof |
| 01/10/2001 | CN1060590C Flash EEPROM cell and method of making the same |
| 01/09/2001 | US6173235 Method of estimating lifetime of floating SOI-MOSFET |
| 01/09/2001 | US6172907 Silicon-oxide-nitride-oxide-semiconductor (SONOS) type memory cell and method for retaining data in the same |
| 01/09/2001 | US6172905 Method of operating a semiconductor device |
| 01/09/2001 | US6172733 Liquid crystal display including conductive layer passing through multiple layers and method of manufacturing same |
| 01/09/2001 | US6172729 Liquid crystal display device of delta arrangement having pixel openings with sides oblique to scan lines |
| 01/09/2001 | US6172728 Reflective LCD including address lines shaped to reduce parasitic capacitance |
| 01/09/2001 | US6172671 Active matrix type display device and fabrication method of the same |
| 01/09/2001 | US6172420 Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact |
| 01/09/2001 | US6172407 Source/drain and lightly doped drain formation at post interlevel dielectric isolation with high-K gate electrode design |
| 01/09/2001 | US6172406 Breakdown drain extended NMOS |
| 01/09/2001 | US6172405 Semiconductor device and production process therefore |
| 01/09/2001 | US6172401 Transistor device configurations for high voltage applications and improved device performance |
| 01/09/2001 | US6172400 MOS transistor with shield coplanar with gate electrode |
| 01/09/2001 | US6172399 Formation of ultra-shallow semiconductor junction using microwave annealing |
| 01/09/2001 | US6172398 Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage |
| 01/09/2001 | US6172397 Non-volatile semiconductor memory device |
| 01/09/2001 | US6172394 Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions |
| 01/09/2001 | US6172393 Nonvolatile memory having contactless array structure which can reserve sufficient on current, without increasing resistance, even if width of bit line is reduced and creation of hyperfine structure is tried, and method of manufacturing nonvolatile memory |
| 01/09/2001 | US6172391 DRAM cell arrangement and method for the manufacture thereof |
| 01/09/2001 | US6172386 A capacitor comprising a ferroelectric film formed from a group lead zirconate titanium and lead lanthanum zirconate titanate where having a relatively larger amount of titanium constituent than zinconate constituent |
| 01/09/2001 | US6172384 Field effect transistor and a method for manufacturing a same |
| 01/09/2001 | US6172380 Semiconductor material |
| 01/09/2001 | US6172378 Integrated circuit varactor having a wide capacitance range |
| 01/09/2001 | US6172370 Lateral PN arrayed digital x-ray image sensor |
| 01/09/2001 | US6171981 Electrode passivation layer of semiconductor device and method for forming the same |
| 01/09/2001 | US6171973 Process for etching the gate in MOS technology using a SiON-based hard mask |
| 01/09/2001 | US6171961 Fabrication method of a semiconductor device |
| 01/09/2001 | US6171950 Method for forming a multilevel interconnection with low contact resistance in a semiconductor device |
| 01/09/2001 | US6171939 Method for forming polysilicon gate electrode |
| 01/09/2001 | US6171937 Process for producing an MOS transistor |
| 01/09/2001 | US6171936 Method of producing co-planar Si and Ge composite substrate |
| 01/09/2001 | US6171935 Process for producing an epitaxial layer with laterally varying doping |
| 01/09/2001 | US6171934 Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling |
| 01/09/2001 | US6171930 Device isolation structure and device isolation method for a semiconductor power integrated circuit |
| 01/09/2001 | US6171920 Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
| 01/09/2001 | US6171916 Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof |
| 01/09/2001 | US6171915 Method of fabricating a MOS-type transistor |
| 01/09/2001 | US6171913 Process for manufacturing a single asymmetric pocket implant |
| 01/09/2001 | US6171912 Method of manufacturing a semiconductor device comprising a field effect transistor |
| 01/09/2001 | US6171910 Method for forming a semiconductor device |
| 01/09/2001 | US6171908 Method of fabricating self-aligned split gate flash memory cell |
| 01/09/2001 | US6171906 Method of forming sharp beak of poly to improve erase speed in split gate flash |
| 01/09/2001 | US6171905 Semiconductor device and method of manufacturing the same |
| 01/09/2001 | US6171900 CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET |
| 01/09/2001 | US6171895 Fabrication of buried channel devices with shallow junction depth |
| 01/09/2001 | US6171894 Method of manufacturing BICMOS integrated circuits on a conventional CMOS substrate |
| 01/09/2001 | US6171891 Method of manufacture of CMOS device using additional implant regions to enhance ESD performance |
| 01/09/2001 | US6171889 Semiconductor device and method of manufacturing the same |
| 01/09/2001 | US6171881 Acceleration sensor and process for the production thereof |
| 01/09/2001 | US6171437 Semiconductor manufacturing device |
| 01/09/2001 | US6170815 Method of fabricating a thin film transistor including forming a trench and forming a gate electrode on one side of the interior of the trench |
| 01/04/2001 | WO2001001496A1 Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers |
| 01/04/2001 | WO2001001495A1 Power-switching semiconductor device |
| 01/04/2001 | WO2001001494A1 Multi-directional radiation coupling in quantum-well infrared photodetectors |
| 01/04/2001 | WO2001001490A1 Soi dram without floating body effect |
| 01/04/2001 | WO2001001484A2 Trench mos-transistor |
| 01/04/2001 | WO2001001481A1 Mos transistor and dram cell arrangement and method for the production thereof |
| 01/04/2001 | WO2001001477A1 Method for lateral etching with holes for making semiconductor devices |
| 01/04/2001 | WO2001001476A1 Method of producing a non-volatile semiconductor memory cell with a separate tunnel window |
| 01/04/2001 | WO2001001449A2 Semiconductor device manufacturing using low energy high tilt angle ion implantation |
| 01/04/2001 | WO2000059045A3 Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| 01/04/2001 | WO2000058999A3 Semiconductor structures having a strain compensated layer and method of fabrication |
| 01/04/2001 | WO2000029824A9 Integral stress isolation apparatus and technique for semiconductor devices |
| 01/04/2001 | DE19930797A1 Elektrisches Halbleiterbauelement Electric semiconductor device |
| 01/04/2001 | DE19930783A1 Halbleiterbauelement Semiconductor device |
| 01/04/2001 | DE19930779A1 Micromechanical component has stop spring mounted on substrate via second flexural spring device with higher flexural stiffness that first flexural spring device for seismic mass |
| 01/04/2001 | DE19929235A1 Vertical DMOS transistor |
| 01/04/2001 | DE19929211A1 MOS-Transistor und Verfahren zu dessen Herstellung sowie DRAM-Zellenanordnung und Verfahren zu deren Herstellung MOS transistor and method for its production as well as the DRAM cell arrangement and method for their preparation |
| 01/04/2001 | DE19928564A1 Mehrkanal-MOSFET und Verfahren zu seiner Herstellung Multi-channel MOSFET and method for its preparation |
| 01/04/2001 | DE10006912A1 Process for fixing a microsensor to a wafer comprises etching a holder of a base wafer, applying a sacrificial layer, forming a recess in a separate assembly wafer |
| 01/03/2001 | EP1065728A2 Heterojunction bipolar transistor and method for fabricating the same |
| 01/03/2001 | EP1065727A2 Edge termination for silicon power devices |
| 01/03/2001 | EP1065726A1 Silicon carbide semiconductor switching device |
| 01/03/2001 | EP1065710A2 Semiconductor device having a recessed gate and method of manufacturing therof |
| 01/03/2001 | EP1065706A2 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
| 01/03/2001 | EP1064684A1 Edge termination for a semiconductor component, schottky diode with an end termination and method for producing a schottky diode |
| 01/03/2001 | CN1278967A 量子计算机 Quantum Computer |
| 01/03/2001 | CN1278657A Electrostatic induction device and its manufacture |
| 01/02/2001 | US6169692 Non-volatile semiconductor memory |
| 01/02/2001 | US6169690 Non-volatile semiconductor memory device |
| 01/02/2001 | US6169687 High density and speed magneto-electronic memory for use in computing system |
| 01/02/2001 | US6169415 Characteristic evaluation apparatus for insulated gate type transistors |
| 01/02/2001 | US6169324 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same |
| 01/02/2001 | US6169315 Metal oxide semiconductor field effect transistor (MOSFET) and method for making thereof |
| 01/02/2001 | US6169308 Semiconductor memory device and manufacturing method thereof |
| 01/02/2001 | US6169307 Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer |
| 01/02/2001 | US6169306 Semiconductor devices comprised of one or more epitaxial layers |