| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/30/2001 | US6181601 Flash memory cell using p+/N-well diode with double poly floating gate |
| 01/30/2001 | US6181202 Differential amplifier |
| 01/30/2001 | US6181186 Power transistor with over-current protection controller |
| 01/30/2001 | US6181007 Semiconductor device |
| 01/30/2001 | US6180996 Semiconductor device comprising a polydiode element |
| 01/30/2001 | US6180988 Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure |
| 01/30/2001 | US6180987 Integrated circuit transistor with low-resistivity source/drain structures at least partially recessed within a dielectric base layer |
| 01/30/2001 | US6180985 SOI device and method for fabricating the same |
| 01/30/2001 | US6180983 High-voltage MOS transistor on a silicon on insulator wafer |
| 01/30/2001 | US6180982 Semiconductor device and method of making thereof |
| 01/30/2001 | US6180981 Termination structure for semiconductor devices and process for manufacture thereof |
| 01/30/2001 | US6180980 Trench non-volatile memory cell |
| 01/30/2001 | US6180978 Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctions |
| 01/30/2001 | US6180977 Self-aligned edge implanted cell to reduce leakage current and improve program speed in split-gate flash |
| 01/30/2001 | US6180974 Semiconductor storage device having a capacitor electrode formed of at least a platinum-rhodium oxide |
| 01/30/2001 | US6180973 Semiconductor memory device and method for manufacturing the same |
| 01/30/2001 | US6180970 Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes |
| 01/30/2001 | US6180968 Compound semiconductor device and method of manufacturing the same |
| 01/30/2001 | US6180966 Trench gate type semiconductor device with current sensing cell |
| 01/30/2001 | US6180965 Semiconductor device having a static induction in a recessed portion |
| 01/30/2001 | US6180959 Static induction semiconductor device, and driving method and drive circuit thereof |
| 01/30/2001 | US6180958 Structure for increasing the maximum voltage of silicon carbide power transistors |
| 01/30/2001 | US6180957 Thin-film semiconductor device, and display system using the same |
| 01/30/2001 | US6180956 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
| 01/30/2001 | US6180543 Method of generating two nitrogen concentration peak profiles in gate oxide |
| 01/30/2001 | US6180538 Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition |
| 01/30/2001 | US6180528 Method for forming a minute resist pattern and method for forming a gate electrode |
| 01/30/2001 | US6180519 Method of forming a layered wiring structure including titanium silicide |
| 01/30/2001 | US6180502 Self-aligned process for making asymmetric MOSFET using spacer gate technique |
| 01/30/2001 | US6180501 Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process |
| 01/30/2001 | US6180499 Method for forming polysilicon-germanium gate in CMOS transistor and device made thereby |
| 01/30/2001 | US6180485 Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits |
| 01/30/2001 | US6180482 Method for manufacturing high dielectric capacitor |
| 01/30/2001 | US6180478 Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance |
| 01/30/2001 | US6180477 Method of fabricating field effect transistor with silicide sidewall spacers |
| 01/30/2001 | US6180474 Method for fabricating semiconductor device |
| 01/30/2001 | US6180472 Method for fabricating semiconductor device |
| 01/30/2001 | US6180471 Method of fabricating high voltage semiconductor device |
| 01/30/2001 | US6180470 FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements |
| 01/30/2001 | US6180468 Very low thermal budget channel implant process for semiconductors |
| 01/30/2001 | US6180465 Method of making high performance MOSFET with channel scaling mask feature |
| 01/30/2001 | US6180464 Metal oxide semiconductor device with localized laterally doped channel |
| 01/30/2001 | US6180457 Method of manufacturing non-volatile memory device |
| 01/30/2001 | US6180456 Triple polysilicon embedded NVRAM cell and method thereof |
| 01/30/2001 | US6180447 Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material |
| 01/30/2001 | US6180444 Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
| 01/30/2001 | US6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method |
| 01/30/2001 | US6180441 Bar field effect transistor |
| 01/30/2001 | US6180440 Method of fabricating a recessed-gate FET without producing voids in the gate metal |
| 01/30/2001 | US6180439 Method for fabricating a semiconductor device |
| 01/30/2001 | US6180438 Thin film transistors and electronic devices comprising such |
| 01/30/2001 | US6180406 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination |
| 01/30/2001 | US6179598 Apparatus for filling a gap between spaced layers of a semiconductor |
| 01/30/2001 | US6178654 Method and system for aligning spherical-shaped objects |
| 01/30/2001 | CA2021095C Field controlled diode (fcd) having mos trench gates |
| 01/30/2001 | CA2013349C Fet, igbt and mct structures to enhance operating characteristics |
| 01/25/2001 | WO2001006572A1 Millimeter wave and far-infrared detector |
| 01/25/2001 | WO2001006570A1 Non-volatile semiconductor memory cell and method for producing the same |
| 01/25/2001 | WO2001006569A1 Semiconductor device including mos field-effect transistor |
| 01/25/2001 | WO2001006568A2 Trench-gate field-effect transistors and their manufacture |
| 01/25/2001 | WO2001006567A1 Bi-directional semiconductor component |
| 01/25/2001 | WO2001006566A1 Image cell, image sensor and production method therefor |
| 01/25/2001 | WO2001006557A1 Method of making a charge compensation semiconductor device using neutron transmutation |
| 01/25/2001 | WO2001006554A1 Method for producing siliconized polysilicon contacts in integrated semiconductor structures |
| 01/25/2001 | WO2001006550A1 Method of making a charge compensation semiconductor device using direct bonding and corresponding device |
| 01/25/2001 | WO2001006542A2 Method for producing a vertical semiconductor transistor component element and a vertical semiconductor transistor component |
| 01/25/2001 | WO2001006496A1 Inorganic permeation layer for micro-electric device |
| 01/25/2001 | WO2001005701A1 Nanometer-order mechanical vibrator, production method thereof and measuring device using it |
| 01/25/2001 | WO2000065636A3 A bipolar transistor |
| 01/25/2001 | DE19933969A1 Bidirektionales Halbleiterbauelement Bidirectional semiconductor component |
| 01/25/2001 | DE19933564C1 Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement A method for producing a vertical semiconductor transistor device and vertical semiconductor transistor device |
| 01/25/2001 | DE19931125A1 Ferroelektrischer Transistor Ferroelectric transistor |
| 01/25/2001 | DE10020394A1 Head component used in the production of integrated circuits contains a mounting surface, and an integrated circuit chip for processing signals covered by a layer |
| 01/25/2001 | CA2379762A1 Inorganic permeation layer for micro-electric device |
| 01/24/2001 | EP1071141A2 Diamond semiconductor and method for the fabrication thereof. |
| 01/24/2001 | EP1071135A2 Doubly graded junction termination extension for edge passivation of semiconductor devices |
| 01/24/2001 | EP1071134A1 Process for manufacturing an electronic device comprising EEPROM memory cells with dimensional control of the floating gate regions |
| 01/24/2001 | EP1071133A1 Vertical bipolar transistor with high gain obtained by means of a process for CMOS devices of non volatile memories |
| 01/24/2001 | EP1071125A2 Process for producing transistors having independently adjustable parameters |
| 01/24/2001 | EP1071124A2 Dry etching method for forming tungsten wiring in a semiconductor device |
| 01/24/2001 | EP1070768A1 Method for making silicon nanocluster monolayers in silicon oxide |
| 01/24/2001 | EP1070344A1 Self-aligned contacts for semiconductor device |
| 01/24/2001 | CN1281261A Electro optical device and electron device using same |
| 01/24/2001 | CN1281260A Semiconductor storage device possessing redundancy function |
| 01/24/2001 | CN1281258A Semiconductor integrated circuit device, its manufacturing method and action method |
| 01/24/2001 | CN1281253A Mixed 5F2 unit layout used in embedding surface strip directed at vertical transistor |
| 01/23/2001 | US6178544 Simulation mesh generation method, apparatus, and program product |
| 01/23/2001 | US6178275 Method and apparatus for modulation of guided plasmons |
| 01/23/2001 | US6178115 Semiconductor memory device and storage method thereof |
| 01/23/2001 | US6178113 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation |
| 01/23/2001 | US6178112 Element exploiting magnetic material and addressing method therefor |
| 01/23/2001 | US6177974 Contact structure |
| 01/23/2001 | US6177826 Silicon-on-insulator circuit having series connected PMOS transistors each having connected body and gate |
| 01/23/2001 | US6177717 Low-noise vertical bipolar transistor and corresponding fabrication process |
| 01/23/2001 | US6177713 Free wheel diode for preventing destruction of a field limiting innermost circumferential layer |
| 01/23/2001 | US6177712 Schottky barrier diode having a guard ring structure |
| 01/23/2001 | US6177708 SOI FET body contact structure |
| 01/23/2001 | US6177707 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metalization is attached by means of an adhesive |
| 01/23/2001 | US6177705 High power PMOS device |
| 01/23/2001 | US6177704 Semiconductor device containing a lateral MOS transistor |