| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/13/2001 | US6187632 Anneal technique for reducing amount of electronic trap in gate oxide film of transistor |
| 02/13/2001 | US6187620 Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
| 02/13/2001 | US6187617 Semiconductor structure having heterogeneous silicide regions and method for forming same |
| 02/13/2001 | US6187615 Chip scale packages and methods for manufacturing the chip scale packages at wafer level |
| 02/13/2001 | US6187605 Method of forming a semiconductor device for a light valve |
| 02/13/2001 | US6187100 Produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment |
| 02/13/2001 | US6186408 High cell density power rectifier |
| 02/13/2001 | CA2178324C Porous semiconductor material |
| 02/08/2001 | WO2001009957A1 Inp collector ingaassb base dhbt device and method of forming the same |
| 02/08/2001 | WO2001009956A1 Method for producing a trench mos power transistor |
| 02/08/2001 | WO2001009955A1 Non-volatile semiconductor memory device |
| 02/08/2001 | WO2001009938A1 Fabrication of lateral rf mos devices with enhanced rf properties |
| 02/08/2001 | WO2001009931A1 Method for forming crystalline silicon nitride |
| 02/08/2001 | WO2000059084A3 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication |
| 02/08/2001 | DE19911463C1 Leseverstärkeranordnung mit Feldeffekttransistor mit kurzer Kanallänge und einstellbarer Einsatzspannung Sense amplifier arrangement with field-effect transistor with a short channel length, and adjustable threshold voltage |
| 02/07/2001 | EP1075029A1 Composite semiconductor device |
| 02/07/2001 | EP1074827A2 Pressure sensor and method of manufacturing the same |
| 02/07/2001 | EP1074642A2 Method of crystallizing a semiconductor thin film by laser irradiation |
| 02/07/2001 | EP1074052A1 Lateral high-voltage sidewall transistor |
| 02/07/2001 | EP1074051A1 VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME |
| 02/07/2001 | EP1074050A1 Insulated-gate field-effect semiconductor device |
| 02/07/2001 | EP1074048A1 Polymer devices |
| 02/07/2001 | EP1074047A1 Method for fabricating an electrically addressable silicon-on-sapphire light valve |
| 02/07/2001 | EP1074046A1 Elimination of poly cap for easy poly1 contact for nand floating gate memory |
| 02/07/2001 | EP1074044A1 Method for producing an soi (silicon on insulator) wafer for low-impedance high-voltage semiconductor components |
| 02/07/2001 | EP1074039A1 Gate insulator comprising high and low dielectric constant parts |
| 02/07/2001 | EP1042808A4 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same |
| 02/07/2001 | CN1283309A Semiconductor diode |
| 02/07/2001 | CN1282980A Method of manufacturing semi-conductor device |
| 02/07/2001 | CN1282868A Pressure sensor and its manufacturing method |
| 02/07/2001 | CN1061783C Method for manufacturing semiconductor device |
| 02/06/2001 | US6184966 Semiconductor device and method for producing the same |
| 02/06/2001 | US6184963 TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines |
| 02/06/2001 | US6184947 Thin film transistor matrix with repairable bus line |
| 02/06/2001 | US6184946 Active matrix liquid crystal display |
| 02/06/2001 | US6184945 Liquid crystal display apparatus in which electrode film forming capacitor in cooperation with pixel electrode is connected to gate wiring via connecting path |
| 02/06/2001 | US6184774 Semiconductor pressure detecting device with piezo resistance crossing grain boundaries |
| 02/06/2001 | US6184612 Electron emission device with electron supply layer of hydrogenated amorphous silicon |
| 02/06/2001 | US6184570 Integrated circuit dies including thermal stress reducing grooves and microelectronic packages utilizing the same |
| 02/06/2001 | US6184564 Schottky diode with adjusted barrier height and process for its manufacture |
| 02/06/2001 | US6184563 Device structure for providing improved Schottky barrier rectifier |
| 02/06/2001 | US6184561 Semiconductor pressure sensor having strain gauges and stress balance film |
| 02/06/2001 | US6184559 Active matrix display device having multiple gate electrode portions |
| 02/06/2001 | US6184556 Semiconductor device |
| 02/06/2001 | US6184555 Field effect-controlled semiconductor component |
| 02/06/2001 | US6184554 Memory cell with self-aligned floating gate and separate select gate, and fabrication process |
| 02/06/2001 | US6184553 Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device |
| 02/06/2001 | US6184550 For use as conductive barrier layers in integrated circuit memory cell structures including ferroelectric or high permittivity capacitors; the nitride-carbide material includes specified metal(s) |
| 02/06/2001 | US6184547 Field effect transistor and method of fabricating the same |
| 02/06/2001 | US6184546 With n+-gaas(gallium arsenide)/p+-gainp(gallium indium phosphide)/n-gaas heterojunctions; due to conduction band discontinuity of gainp/gaas heterointerface in gate region, the gate barrier increased, electrons are confined to channel |
| 02/06/2001 | US6184545 Semiconductor component with metal-semiconductor junction with low reverse current |
| 02/06/2001 | US6184541 Thin film transistor and method of producing the same |
| 02/06/2001 | US6184539 Static memory cell and method of forming static memory cell |
| 02/06/2001 | US6184538 Dual-band quantum-well infrared sensing array having commonly biased contact layers |
| 02/06/2001 | US6184536 Ion implantation process |
| 02/06/2001 | US6184129 Low resistivity poly-silicon gate produced by selective metal growth |
| 02/06/2001 | US6184127 Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass, and a semiconductor structure |
| 02/06/2001 | US6184112 Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile |
| 02/06/2001 | US6184110 Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices |
| 02/06/2001 | US6184105 Method for post transistor isolation |
| 02/06/2001 | US6184102 Method for manufacturing a well isolation bipolar transistor |
| 02/06/2001 | US6184101 Method of manufacturing semiconductor device requiring less manufacturing stages |
| 02/06/2001 | US6184099 Low cost deep sub-micron CMOS process |
| 02/06/2001 | US6184098 Field effect transistor device and method of manufacturing the same |
| 02/06/2001 | US6184088 Method for manufacturing a split game type transistor |
| 02/06/2001 | US6184087 Method for forming high density nonvolatile memories with high capacitive-coupling ratio |
| 02/06/2001 | US6184086 Method for forming a floating gate semiconductor device having a portion within a recess |
| 02/06/2001 | US6184083 Semiconductor device and method of manufacturing the same |
| 02/06/2001 | US6184072 Process for forming a high-K gate dielectric |
| 02/06/2001 | US6184070 Thin film transistor and method of manufacturing the same |
| 02/06/2001 | US6184068 Process for fabricating semiconductor device |
| 02/06/2001 | US6184064 Semiconductor die back side surface and method of fabrication |
| 02/06/2001 | US6184060 Integrated circuits and methods for their fabrication |
| 02/06/2001 | US6184059 Process of making diamond-metal ohmic junction semiconductor device |
| 02/06/2001 | US6184052 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom |
| 02/06/2001 | US6183857 Substrate with semi-insulating layer of silicon and particles embedded in silicon |
| 02/01/2001 | WO2001008242A1 Preferred methods for producing electrical circuit elements used to control an electronic display |
| 02/01/2001 | WO2001008241A1 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device |
| 02/01/2001 | WO2001008226A2 Cellular trench-gate field-effect transistors |
| 02/01/2001 | WO2001008225A1 Method for making a device comprising layers of planes of quantum dots |
| 02/01/2001 | WO2001008208A1 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film |
| 02/01/2001 | WO2001008193A1 Vacuum field-effect device and fabrication process therefor |
| 02/01/2001 | WO2001007961A1 Use of a storage capacitor to enhance the performance of an active matrix driven electronic display |
| 02/01/2001 | DE19933162A1 Bildzelle, Bildsensor und Herstellungsverfahren hierfür Image cell image sensor and manufacturing method thereof |
| 02/01/2001 | DE10025217A1 Metal oxide transistor in a silicon-on-insulator construction suppressing effect of suspended body includes barrier layer formed by doping- and semiconductor layers, without application of external voltage |
| 02/01/2001 | DE10025216A1 Semiconducting device has silicon in isolator substrate, insulating layer, semiconducting layer, transistor with gate electrode, polycrystalline semiconducting region and contact hole |
| 02/01/2001 | CA2345629A1 Vacuum field-effect device and fabrication process therefor |
| 01/31/2001 | EP1073123A2 High withstand voltage semiconductor device |
| 01/31/2001 | EP1073121A2 Semiconductor memory device and method for manufacturing the same |
| 01/31/2001 | EP1073120A2 An NROM fabrication method |
| 01/31/2001 | EP1073114A2 Integrated circuit capacitor including anchored metal plug |
| 01/31/2001 | EP1073110A1 Method of manufacturing unipolar devices |
| 01/31/2001 | CN1282449A Reduced capacitance transistor with electron-static discharge protection structure and method for forming the same |
| 01/31/2001 | CN1282111A Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof |
| 01/31/2001 | CN1282107A Wiring and its making method including the described wired semiconductor device and dry etching process |
| 01/31/2001 | CN1282106A Contact structure and semiconductor device |
| 01/31/2001 | CN1282098A Method for forming semiconductor device |
| 01/31/2001 | CN1061469C Method of fabricating thin-film transistor having offset grid structure |
| 01/31/2001 | CN1061468C Method of fabricating MIS semiconductor device |
| 01/30/2001 | US6181623 Semiconductor MOS/BIPOLAR composite transistor and semiconductor memory device using the same |