| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/27/2001 | US6195138 Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching |
| 02/27/2001 | US6194829 Micro vacuum tube with cap seal |
| 02/27/2001 | US6194784 Self-aligned contact process in semiconductor fabrication and device therefrom |
| 02/27/2001 | US6194783 Hillock-free aluminum-containing film consisting of aluminum having trace oxygen content formed by placing substrate in vacuum deposition chamber including aluminum-containing target, evacuating, applying electricity, introducing hydrogen |
| 02/27/2001 | US6194776 Semiconductor circuit device having triple-well structure in semiconductor substrate, method of fabricating the same, and mask device for fabrication of the same |
| 02/27/2001 | US6194773 Vertical transistor having top and bottom surface isolation |
| 02/27/2001 | US6194772 High-voltage semiconductor device with trench structure |
| 02/27/2001 | US6194768 High dielectric constant gate dielectric with an overlying tantalum gate conductor formed on a sidewall surface of a sacrificial structure |
| 02/27/2001 | US6194766 Integrated circuit having low voltage and high voltage devices on a common semiconductor substrate |
| 02/27/2001 | US6194763 Semiconductor device having SOI-MOSFET |
| 02/27/2001 | US6194762 Complementary metal oxide semiconductor (CMOS) device comprising thin-film transistors arranged on a glass substrate |
| 02/27/2001 | US6194761 VDMOS transistor protected against over-voltages between source and gate |
| 02/27/2001 | US6194760 Double-diffused MOS transistor and method of fabricating the same |
| 02/27/2001 | US6194759 Semiconductor memory device |
| 02/27/2001 | US6194757 Semiconductor device having contact hole and method of manufacturing the same |
| 02/27/2001 | US6194753 Method of forming a perovskite structure semiconductor capacitor |
| 02/27/2001 | US6194752 Dielectric device, dielectric memory and method of fabricating the same |
| 02/27/2001 | US6194751 Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation |
| 02/27/2001 | US6194749 CCD type solid state image pickup device having double-structured charge transfer electrodes |
| 02/27/2001 | US6194748 MOSFET with suppressed gate-edge fringing field effect |
| 02/27/2001 | US6194747 Field effect transistor |
| 02/27/2001 | US6194746 Vertical diode structures with low series resistance |
| 02/27/2001 | US6194741 MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
| 02/27/2001 | US6194740 Optical sensor |
| 02/27/2001 | US6194737 Phase-locked circuit device using a single-electron tunneling junction element and method of fabricating the same |
| 02/27/2001 | US6194320 Method for preparing a semiconductor device |
| 02/27/2001 | US6194311 Method for manufacturing semiconductor device capable of effectively carrying out hydrogen passivation |
| 02/27/2001 | US6194304 Semiconductor device and method of fabricating the same |
| 02/27/2001 | US6194303 Memory device |
| 02/27/2001 | US6194299 Method for fabrication of a low resistivity MOSFET gate with thick metal on polysilicon |
| 02/27/2001 | US6194297 Method for forming salicide layers |
| 02/27/2001 | US6194296 Method for making planarized polycide |
| 02/27/2001 | US6194294 Method of forming gate electrode in semiconductor device |
| 02/27/2001 | US6194293 Channel formation after source and drain regions are formed |
| 02/27/2001 | US6194282 Method for stabilizing SOI semiconductor device and SOI semiconductor device |
| 02/27/2001 | US6194278 Device performance by employing an improved method for forming halo implants |
| 02/27/2001 | US6194273 Method of manufacturing an insulated gate type semiconductor device having a U-shaped groove |
| 02/27/2001 | US6194272 Split gate flash cell with extremely small cell size |
| 02/27/2001 | US6194269 Method to improve cell performance in split gate flash EEPROM |
| 02/27/2001 | US6194261 High yield semiconductor device and method of fabricating the same |
| 02/27/2001 | US6194257 Fabrication method of gate electrode having dual gate insulating film |
| 02/27/2001 | US6194256 Method for fabricating CMOS device |
| 02/27/2001 | US6194255 Method for manufacturing thin-film transistors |
| 02/27/2001 | US6194254 Semiconductor device and method for manufacturing the same |
| 02/27/2001 | US6194242 Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section |
| 02/27/2001 | US6194237 Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom |
| 02/27/2001 | US6194236 Electrochemical etching method for silicon substrate having PN junction |
| 02/27/2001 | US6194228 Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor |
| 02/27/2001 | US6194227 Method of producing a bismuth layer structured ferroelectric thin film |
| 02/27/2001 | US6194119 Thermal transfer donor element with light to heat conversion layer, interlayer, and thermal transfer layer including release layer, cathode layer, light emitting polymer layer, small molecule hole transport layer and anode layer |
| 02/27/2001 | US6194023 Method of manufacturing a poly-crystalline silicon film |
| 02/27/2001 | US6192761 Sensor chip, laminated wafer for sensor chip and manufacturing method of sensor chip |
| 02/22/2001 | WO2001013436A1 Passivation of gan based fets |
| 02/22/2001 | WO2001013434A1 Semiconductor diode and method for producing the same |
| 02/22/2001 | WO2001013433A1 Spherical shaped integrated circuit utilizing an inductor |
| 02/22/2001 | WO2001013432A1 Sensing devices using chemically-gated single electron transistors |
| 02/22/2001 | WO2001013378A1 Multiple-bit nonvolatile memory using non-conductive charge trap gate |
| 02/22/2001 | WO2000060665A3 An eeprom cell on soi |
| 02/22/2001 | WO2000030182A3 Offset drain fermi-threshold field effect transistors |
| 02/22/2001 | DE19939318A1 Procedure for production of micro-mechanical structures such as rotation sensors has extra protective layer deposition and etching steps to protect the structure during processing of the reverse side of the substrate |
| 02/22/2001 | DE19933985A1 Edge termination for power semiconductor device |
| 02/22/2001 | DE19926500A1 Nichtflüchtige Halbleiter-Speicherzelle und Verfahren zu deren Herstellung A non-volatile semiconductor memory cell and process for their preparation |
| 02/22/2001 | DE10031626A1 Trench structure used in the production of MOSFETs comprises a trench formed in a substrate, a dielectric material covering a wall of the trench to form a dielectric layer |
| 02/21/2001 | EP1077494A2 Heterojunction bipolar transistor and method for fabricating the same |
| 02/21/2001 | EP1077492A1 Photo-detector |
| 02/21/2001 | EP1077483A2 Method of making an integrated circuit device having a planar interlevel dielectric layer |
| 02/21/2001 | EP1077481A2 Etching aluminium over refractory metal with successive plasmas |
| 02/21/2001 | EP1076916A1 Flash memory cell with self-aligned gates and fabrication process |
| 02/21/2001 | EP1076826A1 Method for producing micromechanical components |
| 02/21/2001 | EP1016139A4 Rf power device having voltage controlled linearity |
| 02/21/2001 | CN1285034A Microelectromechanically, tunable, confocel, VCSEL and fabry-perot filter |
| 02/21/2001 | CN1284748A Semiconductor device having nitrogen gate containing insulating film and manufacturing method |
| 02/21/2001 | CN1284747A Semiconductor device and method for manufacture of the same |
| 02/21/2001 | CN1284743A Method of manufacturing transistor for semiconductor device |
| 02/21/2001 | CN1284694A Manufacture of electro-optical device |
| 02/20/2001 | US6191978 Non-volatile semiconductor memory device |
| 02/20/2001 | US6191975 Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistor |
| 02/20/2001 | US6191817 Charge transfer device and method of driving the charge transfer device |
| 02/20/2001 | US6191640 Method and device for driving a turn-off thyristor |
| 02/20/2001 | US6191536 Solid-state ignition system using true voltage triggering |
| 02/20/2001 | US6191485 Semiconductor device |
| 02/20/2001 | US6191476 Semiconductor device |
| 02/20/2001 | US6191466 Semiconductor device containing a diode |
| 02/20/2001 | US6191463 Apparatus and method of improving an insulating film on a semiconductor device |
| 02/20/2001 | US6191459 Electrically programmable memory cell array, using charge carrier traps and insulation trenches |
| 02/20/2001 | US6191456 Lateral IGBT in an SOI configuration and method for its fabrication |
| 02/20/2001 | US6191455 Semi-conductor device protected by electrostatic protection device from electrostatic discharge damage |
| 02/20/2001 | US6191453 Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
| 02/20/2001 | US6191452 Thin film transistor having a stopper layer |
| 02/20/2001 | US6191450 Semiconductor device with field shield electrode |
| 02/20/2001 | US6191449 SOI based transistor having an independent substrate potential control |
| 02/20/2001 | US6191447 Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| 02/20/2001 | US6191446 Formation and control of a vertically oriented transistor channel length |
| 02/20/2001 | US6191445 Nonvolatile semiconductor memory device and method of reading a data therefrom |
| 02/20/2001 | US6191443 First capacitor electrode of a conductively doped si-ge alloy; si3n4 layer over the first capacitor electrode; dielectric layer comprising ta2o5 over the si3n4 layer; and second capacitor electrode over the ta2o5 dielectric layer |
| 02/20/2001 | US6191442 DRAM memory with TFT superposed on a trench capacitor |
| 02/20/2001 | US6191440 Charge transfer device with improved charge detection sensitivity |
| 02/20/2001 | US6191435 Semiconductor integrated circuit and liquid crystal display appratus |
| 02/20/2001 | US6191432 Semiconductor device and memory device |
| 02/20/2001 | US6191051 Wafer storing system having vessel coated with ozone-proof material and method of storing semiconductor wafer |