| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/08/2001 | CA2384004A1 Method to fabricate a mosfet |
| 03/07/2001 | EP1081769A1 Semiconductor device and process for manufacturing the same |
| 03/07/2001 | EP1081768A2 Insulated gate field-effect transistor and method of making the same |
| 03/07/2001 | EP1081766A1 CCD image sensor using amplification by secondary electron generation |
| 03/07/2001 | EP1081747A1 Diamond PN junction diode and method for the fabrication thereof |
| 03/07/2001 | EP1081676A1 Active matrix liquid crystal display with pixel capacitor |
| 03/07/2001 | EP1081255A2 A three-dimensional periodic structure and a method for producing the same |
| 03/07/2001 | EP1081093A2 Process for the fabricaiton of micromechanical shallow structures by etching with a vapour phase medium containing hydrofluoric acid |
| 03/07/2001 | EP1080525A1 Switch circuit and semiconductor switch, for battery-powered equipment |
| 03/07/2001 | EP1080501A1 Power diode structure |
| 03/07/2001 | EP1080499A1 Semiconductor device comprising a non-volatile memory |
| 03/07/2001 | EP1080490A1 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor |
| 03/07/2001 | EP1080229A1 Chemically assembled nano-scale devices |
| 03/07/2001 | EP0820581B1 Method of producing a semiconductor chip |
| 03/07/2001 | CN1286807A Electrically erasable programmable split-gate memory cell |
| 03/07/2001 | CN1286806A Power semiconductor device in wide-band-gap semiconductor |
| 03/07/2001 | CN1286805A Silicon carbide semiconductor switching device |
| 03/07/2001 | CN1286803A Semiconductor component and mfg. method for semiconductor component |
| 03/07/2001 | CN1286793A Flash memory array |
| 03/07/2001 | CN1286495A Structure of transistor having parameters capable of adjusting independently, and process integration |
| 03/07/2001 | CN1286493A Semiconductor device and mfg. method therefor |
| 03/07/2001 | CN1062980C Grid control mixing tube and its preparing method |
| 03/07/2001 | CN1062979C Method for fabricating gate electrode of CMOS device |
| 03/06/2001 | US6198657 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 03/06/2001 | US6198379 Semiconductor component with piezoresistive measuring shunts |
| 03/06/2001 | US6198167 Semiconductor structure exhibiting reduced contact resistance and method for fabrication |
| 03/06/2001 | US6198157 Semiconductor device having buried boron and carbon regions |
| 03/06/2001 | US6198156 Bipolar power transistors and manufacturing method |
| 03/06/2001 | US6198154 PNP lateral bipolar electronic device |
| 03/06/2001 | US6198152 Semiconductor device |
| 03/06/2001 | US6198149 Semiconductor device having novel insulating film structure |
| 03/06/2001 | US6198143 Semiconductor device including a layer of thermally stable titanium silicide |
| 03/06/2001 | US6198142 Transistor with minimal junction capacitance and method of fabrication |
| 03/06/2001 | US6198141 Insulated gate semiconductor device and method of manufacturing the same |
| 03/06/2001 | US6198138 Analogue misfet with threshold voltage adjuster |
| 03/06/2001 | US6198137 Semiconductor device |
| 03/06/2001 | US6198135 Semiconductor device having electrostatic discharge protection element and manufacturing method thereof |
| 03/06/2001 | US6198134 Semiconductor device having a common substrate bias |
| 03/06/2001 | US6198133 Electro-optical device having silicon nitride interlayer insulating film |
| 03/06/2001 | US6198132 Thin-film device with annular shaped insulation on its gate electrode |
| 03/06/2001 | US6198131 High-voltage metal-oxide semiconductor |
| 03/06/2001 | US6198130 Semiconductor device and method for manufacturing the same |
| 03/06/2001 | US6198129 Vertical type insulated gate transistor |
| 03/06/2001 | US6198128 Method of manufacturing a semiconductor device, and semiconductor device |
| 03/06/2001 | US6198127 MOS-gated power device having extended trench and doping zone and process for forming same |
| 03/06/2001 | US6198126 Semiconductor device and power converter using same |
| 03/06/2001 | US6198120 Comprising a silicon substrate, an epitaxial thin film of titanium aluminum nitride having low oxygen content, a metal thin film, an oriented ferroelectric thin film composed of an oxide having perovskite structure |
| 03/06/2001 | US6198117 Transistor having main cell and sub-cells |
| 03/06/2001 | US6198115 IGBT with reduced forward voltage drop and reduced switching loss |
| 03/06/2001 | US6198114 Field effect transistor having dielectrically isolated sources and drains and method for making same |
| 03/06/2001 | US6198113 Electrostatically operated tunneling transistor |
| 03/06/2001 | US6198112 III-V compound semiconductor luminescent device |
| 03/06/2001 | US6197702 Fabrication process of a semiconductor integrated circuit device |
| 03/06/2001 | US6197701 Lightly nitridation surface for preparing thin-gate oxides |
| 03/06/2001 | US6197693 Methods for forming gate electrodes of semiconductor devices |
| 03/06/2001 | US6197688 Interconnect structure in a semiconductor device and method of formation |
| 03/06/2001 | US6197672 Method for forming polycide dual gate |
| 03/06/2001 | US6197668 Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devices |
| 03/06/2001 | US6197667 Dipping composite semiconductor substrate into solution containing phosphorus pentasulphide/ammonia sulphide and drying with nitrogen; performing fluoride treatment and repeating procedure; performing ultraviolet ray treatment |
| 03/06/2001 | US6197663 Process for fabricating integrated circuit devices having thin film transistors |
| 03/06/2001 | US6197662 Semiconductor processing method of forming field isolation oxide using a polybuffered mask which includes a base nitride layer on the substrate, and other semiconductor processing methods |
| 03/06/2001 | US6197648 Manufacturing method of MOSFET having salicide structure |
| 03/06/2001 | US6197647 Method of forming ultra-thin oxides with low temperature oxidation |
| 03/06/2001 | US6197646 Manufacture of semiconductor device with salicide electrode |
| 03/06/2001 | US6197645 Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewalls |
| 03/06/2001 | US6197643 Method for making level converting circuit, internal potential generating circuit and internal potential generating unit |
| 03/06/2001 | US6197642 Method for manufacturing gate terminal |
| 03/06/2001 | US6197641 Process for fabricating vertical transistors |
| 03/06/2001 | US6197640 Semiconductor component and method of manufacture |
| 03/06/2001 | US6197636 Electrically erasable programmable read-only memory device and method for fabricating the same |
| 03/06/2001 | US6197631 Semiconductor storage device with a capacitor using a ferroelectric substance and fabricating method thereof |
| 03/06/2001 | US6197626 Method for fabricating semiconductor device |
| 03/06/2001 | US6197625 Method of fabricating a thin film transistor |
| 03/06/2001 | US6197624 Method of adjusting the threshold voltage in an SOI CMOS |
| 03/06/2001 | US6197622 Structure of metal-insulator-semiconductor-like multiple-negative-differential-resistance device and fabrication method thereof |
| 03/06/2001 | US6197600 Ferroelectric thin film, manufacturing method thereof and device incorporating the same |
| 03/06/2001 | US6197441 Cubic nitride semiconductor device and fabrication method of the same |
| 03/06/2001 | US6196096 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 03/05/2001 | WO2001031710A1 Semiconductor device |
| 03/01/2001 | WO2001015236A1 Ferroelectric transistor and method for producing the same |
| 03/01/2001 | WO2001015235A1 Vertically structured semiconductor power module |
| 03/01/2001 | WO2001015234A1 Thin-film transistors and method for producing the same |
| 03/01/2001 | WO2001015171A2 Flash memory architecture employing three layer metal interconnect |
| 03/01/2001 | DE19937262A1 Anordnung mit Transistor-Funktion Arrangement with transistor function |
| 03/01/2001 | DE19930531A1 Tunnelkontakt und Verfahren zu seiner Herstellung Tunnel contact and process for its preparation |
| 03/01/2001 | DE10041344A1 Super junction semiconducting device has surface with active region with 2 main electrodes, second surface with third electrode, alternating conductivity layer providing current path in on state |
| 03/01/2001 | DE10037255A1 Semiconducting product has Schottky contact and edge region connected to component structure that holds overload current corresponding to defined step current within Schottky contact |
| 03/01/2001 | DE10022425A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same |
| 02/28/2001 | EP1079438A2 High frequency semiconductor device |
| 02/28/2001 | EP1079434A2 Power device packaging structure |
| 02/28/2001 | EP1079394A1 Semiconductor memory |
| 02/28/2001 | EP1078461A1 Circuit with individual electron components and method for the operation thereof |
| 02/28/2001 | EP1078403A1 Gate turn-off thyristor |
| 02/28/2001 | EP1078402A1 Semiconductor system with trenches for separating doped areas |
| 02/28/2001 | EP1078401A1 Power mos transistor with overtemperature protection circuit |
| 02/28/2001 | EP0998592A4 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
| 02/28/2001 | CN1285955A Semiconductor substrate and method for making same |
| 02/27/2001 | US6195790 Electrical parameter evaluation system, electrical parameter evaluation method, and computer-readable recording medium for recording electrical parameter evaluation program |
| 02/27/2001 | US6195292 Semiconductor memory with floating gate type FET |
| 02/27/2001 | US6195139 Electro-optical device |