| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/27/2001 | US6207503 Method for shrinking array dimensions of split gate flash memory device using multilayer etching to define cell and source line |
| 03/27/2001 | US6207490 Semiconductor device and method for fabricating the same |
| 03/27/2001 | US6207488 Method for forming a tantalum oxide capacitor using two-step rapid thermal nitridation |
| 03/27/2001 | US6207485 Integration of high K spacers for dual gate oxide channel fabrication technique |
| 03/27/2001 | US6207481 Thin film transistor having a crystallization seed layer and a method for manufacturing thereof |
| 03/27/2001 | US6207472 Low temperature thin film transistor fabrication |
| 03/27/2001 | US6207465 Method of fabricating ferroelectric integrated circuit using dry and wet etching |
| 03/27/2001 | US6206985 A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| 03/22/2001 | WO2001020691A1 Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss) |
| 03/22/2001 | WO2001020685A1 Thin-film transistor and method for producing the same |
| 03/22/2001 | WO2001020684A1 Trench dmos transistor having improved trench structure |
| 03/22/2001 | WO2001020683A1 Semiconductor device |
| 03/22/2001 | WO2001020682A1 Semiconductor device |
| 03/22/2001 | WO2001020680A1 Semiconductor device with esd protection |
| 03/22/2001 | WO2001020672A1 Protective layer for a semiconductor device |
| 03/22/2001 | WO2001020667A1 Integrated circuit and method of manufacture thereof |
| 03/22/2001 | WO2001020656A2 Dmos transistor having a trench gate electrode and method of making the same |
| 03/22/2001 | WO2001020259A1 Electrically decoupled micromachined gyroscope |
| 03/22/2001 | WO2000033353A3 Field-effect semiconductor devices |
| 03/22/2001 | WO2000013236A9 Layered dielectric on silicon carbide semiconductor structures |
| 03/22/2001 | DE19943143A1 Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung A semiconductor device for high blocking voltages with a low on-resistance and process for its preparation |
| 03/22/2001 | DE19942677A1 Compensating component used in metal oxide semiconductor transistor (MOST) comprises an n-conducting drift zone provided in a silicon semiconductor body |
| 03/22/2001 | DE10036891A1 Schottky diode production method involves setting up semiconductor substrate, mounting epitaxial layer followed by doping material on substrate, and depositing metal layer on doping material |
| 03/22/2001 | CA2384784A1 Protective layer for a semiconductor device |
| 03/21/2001 | EP1085784A2 Semiconductor device, semiconductor electret condenser microphone, and method of producing semiconductor electret condenser microphone |
| 03/21/2001 | EP1085583A2 Semiconductor devices with quantum-wave inference layers |
| 03/21/2001 | EP1085582A2 Light-emitting semiconductor device with quantum-wave interference layers |
| 03/21/2001 | EP1085581A2 Semiconductor device with quantum-wave interference layers |
| 03/21/2001 | EP1085577A2 Power field-effect transistor having a trench gate electrode and method of making the same |
| 03/21/2001 | EP1085575A1 Electronic device for controlling the "bouncing" in electronic circuits integrated on semiconductor substrate |
| 03/21/2001 | EP1085574A2 Semiconductor device and method of producing the same |
| 03/21/2001 | EP1085561A1 Chip scale surface mount package for semiconductor device and process of fabricating the same |
| 03/21/2001 | EP1085519A1 Semiconductor integrated device |
| 03/21/2001 | EP1084501A1 Voltage boosting circuit including capacitor with reduced parasitic capacitance |
| 03/21/2001 | EP1084495A1 Eeprom |
| 03/21/2001 | CN1288264A Silicon type semiconductor used on high voltage bearing insulator |
| 03/21/2001 | CN1288263A Semiconductor protection device and mfg. method therefor |
| 03/21/2001 | CN1288255A Semiconductor device chip scale surface assembling and packaging, and mfg. method therefor |
| 03/21/2001 | CN1288254A Method for mfg. semiconductor device and active array substrate and photoelectric device |
| 03/21/2001 | CN1063580C Process for fabricating semiconductor device with inter-connected multiple layers |
| 03/20/2001 | US6205075 Semiconductor memory device capable of reducing the effect of crosstalk noise between main bit lines and virtual main grounding lines |
| 03/20/2001 | US6205048 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same |
| 03/20/2001 | US6204907 Liquid crystal display device and manufacturing method thereof |
| 03/20/2001 | US6204905 Vertical alignment liquid crystal display device having planarized substrate surface |
| 03/20/2001 | US6204717 Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus |
| 03/20/2001 | US6204564 Semiconductor device and method for making the same |
| 03/20/2001 | US6204560 Titanium nitride diffusion barrier for use in non-silicon technologies and method |
| 03/20/2001 | US6204552 Semiconductor device |
| 03/20/2001 | US6204543 Semiconductor device having LDD structure and method for producing the same |
| 03/20/2001 | US6204542 Field effect transistor with improved driving capability |
| 03/20/2001 | US6204541 Semiconductor memory |
| 03/20/2001 | US6204539 Semiconductor apparatus and manufacturing method therefor |
| 03/20/2001 | US6204536 Semiconductor device and manufacturing method thereof |
| 03/20/2001 | US6204535 Thin film transistor having laminated source and drain regions |
| 03/20/2001 | US6204534 SOI MOS field effect transistor |
| 03/20/2001 | US6204533 Vertical trench-gated power MOSFET having stripe geometry and high cell density |
| 03/20/2001 | US6204532 Pillar transistor incorporating a body contact |
| 03/20/2001 | US6204531 Non-volatile memory structure and corresponding manufacturing process |
| 03/20/2001 | US6204530 Flash-type nonvolatile semiconductor memory devices for preventing overerasure |
| 03/20/2001 | US6204529 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
| 03/20/2001 | US6204527 Semiconductor memory device and method for producing same |
| 03/20/2001 | US6204522 Switching device |
| 03/20/2001 | US6204521 Thin film transistors |
| 03/20/2001 | US6204520 Thin film transistor, liquid crystal display and fabricating methods thereof |
| 03/20/2001 | US6204519 Thin film semiconductor device |
| 03/20/2001 | US6204518 SRAM cell and its fabrication process |
| 03/20/2001 | US6204517 Single electron transistor memory array |
| 03/20/2001 | US6204515 Semiconducting polymer field effect transistor |
| 03/20/2001 | US6204513 Heterostructure interband tunneling diode |
| 03/20/2001 | US6204512 Provided with a p-electrode that allows observation of the light emitted from the device from a side of the substrate and an n-electrode that establishes an ohmic contact with an n-type gallium nitride-based compound semiconductor layer |
| 03/20/2001 | US6204205 Using H2anneal to improve the electrical characteristics of gate oxide |
| 03/20/2001 | US6204203 Post deposition treatment of dielectric films for interface control |
| 03/20/2001 | US6204177 Introducing alloy at cobalt grain boundaries within cobalt layer that overlays silicon layer, alloy selected from zinc, magnesium, tellurium, gallium and germanium; annealing cobalt and silicon layer to form silicide regions |
| 03/20/2001 | US6204170 Method for manufacturing semiconductor device having metal silicide film and metal film in which metal film can be selectively removed |
| 03/20/2001 | US6204159 Method of forming select gate to improve reliability and performance for NAND type flash memory devices |
| 03/20/2001 | US6204156 Method to fabricate an intrinsic polycrystalline silicon film |
| 03/20/2001 | US6204155 Semiconductor device and production thereof |
| 03/20/2001 | US6204154 Semiconductor device and fabrication method thereof |
| 03/20/2001 | US6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
| 03/20/2001 | US6204138 Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects |
| 03/20/2001 | US6204135 Method for patterning semiconductors with high precision, good homogeneity and reproducibility |
| 03/20/2001 | US6204130 Semiconductor device having reduced polysilicon gate electrode width and method of manufacture thereof |
| 03/20/2001 | US6204128 Method for fabricating semiconductor device |
| 03/20/2001 | US6204126 Method to fabricate a new structure with multi-self-aligned for split-gate flash |
| 03/20/2001 | US6204125 Method of forming a gate in a stack gate flash EEPROM cell |
| 03/20/2001 | US6204124 Method for forming high density nonvolatile memories with high capacitive-coupling ratio |
| 03/20/2001 | US6204123 Vertical floating gate transistor with epitaxial channel |
| 03/20/2001 | US6204122 Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratios |
| 03/20/2001 | US6204099 Method for producing insulated gate thin film semiconductor device |
| 03/20/2001 | US6204097 Semiconductor device and method of manufacture |
| 03/20/2001 | US6204095 Method of forming overmolded chip scale package and resulting product |
| 03/20/2001 | US6204086 Method for manufacturing semiconductor components having micromechanical structures |
| 03/20/2001 | US6204084 Nitride system semiconductor device and method for manufacturing the same |
| 03/20/2001 | US6203981 Using transistors integrated with substrate and molecular receptor bound directly to surface of semiconductive channel of first transistor and sensing non-zero offset voltage between gate electrodes of transistors when molecule is bound |
| 03/20/2001 | US6203658 Processing system and method for making spherical shaped semiconductor integrated circuits |
| 03/20/2001 | CA2165334C High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 03/15/2001 | WO2001019133A1 A pressure transducer |
| 03/15/2001 | WO2001018879A1 Semiconductor component and method for the production thereof |
| 03/15/2001 | WO2001018878A1 Semiconductor memory and method of manufacture thereof |
| 03/15/2001 | WO2001018877A1 Semiconductor device and method of manufacture thereof |