Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2001
04/03/2001US6211027 Method for manufacturing PMOS transistor
04/03/2001US6211026 Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors
04/03/2001US6211025 Method of making elevated source/drain using poly underlayer
04/03/2001US6211023 Method for fabricating a metal-oxide semiconductor transistor
04/03/2001US6211017 Method of fabricating floating gate EEPROM
04/03/2001US6211016 Method for forming high density nonvolatile memories with high capacitive-coupling ratio
04/03/2001US6211013 Method for fabricating single electron transistor
04/03/2001US6211011 Method for fabricating asymmetric virtual ground P-channel flash cell
04/03/2001US6211005 Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereof
04/03/2001US6211003 Semiconductor integrated circuit device and process for manufacturing the same
04/03/2001US6211001 Electrostatic discharge protection for salicided devices and method of making same
04/03/2001US6211000 Method of making high performance mosfets having high conductivity gate conductors
04/03/2001US6210999 Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices
04/03/2001US6210998 Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer
04/03/2001US6210997 Semiconductor device and method for manufacturing the same
04/03/2001US6210994 Process for forming an edge structure to seal integrated electronic devices, and corresponding device
04/03/2001US6209394 Integrated angular speed sensor device and production method thereof
03/2001
03/29/2001WO2001022584A1 Overcurrent control circuit of power semiconductor device
03/29/2001WO2001022499A1 Zirconia-containing transparent and conducting oxides
03/29/2001WO2001022498A1 Silicon-carbide semiconductor device with a schottky contact and method for producing same
03/29/2001WO2001022497A1 Superlattice fabrication for inas/gasb/alsb semiconductor structures
03/29/2001WO2001022496A1 Method for producing memory and logic transistors
03/29/2001WO2001022493A1 Integrated high voltage capacitive coupling circuit using bonded and trenched isolated wafer technology
03/29/2001WO2001022487A1 Integrated-circuit manufacturing using high interstitial-recombination-rate blocking layer for source/drain extension implant
03/29/2001WO2001022475A2 Method for dicing mesa-diodes
03/29/2001WO2001022094A2 Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation
03/29/2001WO2000067322A3 Self-aligned source and drain extensions fabricated in a damascene contact and gate process
03/29/2001WO2000045441A3 Semiconductor device with a multiple dielectric
03/29/2001WO2000036652A3 Method of manufacturing a gate electrode
03/29/2001WO2000030181A3 Field effect-controlled transistor and method for producing the same
03/29/2001US20010000074 Thin film transistor and method of manufacturing the same
03/29/2001DE10004067A1 Making bipolar element e.g. transistor operating in high gigahertz region, involves forming base layer, masking layer and second base semiconductor layer carrying ohmic electrode in metallic material
03/28/2001EP1087443A2 Self-aligned non-volatile random access memory cell and process to make the same
03/28/2001EP1087442A2 Floating gate memory array and self-aligned method of fabrication therefor
03/28/2001EP1087438A2 Semiconductor device and method of manufacturing therof
03/28/2001EP1087430A2 A method and apparatus for integrating a metal nitride film in a semiconductor device
03/28/2001EP1087424A1 Method for fabricating a self-aligned vertical bipolar transistor
03/28/2001EP1087413A2 Tactile sensor comprising nanowires and method for making the same
03/28/2001EP1087035A1 Method and apparatus for formation of thin film
03/28/2001EP1086496A2 Nitride based transistors on semi-insulating silicon carbide substrates
03/28/2001EP1086495A1 High-voltage semiconductor component, method for the production and use thereof
03/28/2001EP1086493A1 Device and method for controlling thyristors
03/28/2001EP1086491A1 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions
03/28/2001EP1086490A1 Thin film transistors and their manufacture
03/28/2001EP1086487A2 Methods of fabricating silicon carbide power devices by controlled annealing
03/28/2001EP1086480A1 Planar electron emitter (pee)
03/28/2001EP0983612A4 A thermal conducting trench in a semiconductor structure and method for forming the same
03/28/2001CN1289432A Electro-optical device and production method thereof and electronic equipment
03/28/2001CN1289220A Semiconductor device, semiconductor electret capacitor microphone and mfg. method thereof
03/28/2001CN1289150A Semiconductor device
03/28/2001CN1289149A High-speed composite p channel si/siGe heterogeneous structure of field-effect devices
03/28/2001CN1289142A Optimized penetrance injection for simutaneously forming silicon-metal compacitor
03/27/2001US6208950 Noise reduction method for a semiconductor device
03/27/2001US6208557 EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
03/27/2001US6208399 Liquid crystal display device
03/27/2001US6208390 Electrode substrate resistant to wire breakage for an active matrix display device
03/27/2001US6208012 Zener zap diode and method of manufacturing the same
03/27/2001US6208011 Voltage-controlled power semiconductor device
03/27/2001US6208004 Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof
03/27/2001US6208003 Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film
03/27/2001US6208002 Field effect transistor and manufacturing method thereof
03/27/2001US6208001 Gallium arsenide semiconductor devices fabricated with insulator layer
03/27/2001US6208000 Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon
03/27/2001US6207997 Thin film transistor for antistatic circuit and method for fabricating the same
03/27/2001US6207996 Semiconductor device and method for manufacturing the same
03/27/2001US6207995 High K integration of gate dielectric with integrated spacer formation for high speed CMOS
03/27/2001US6207994 High-voltage transistor with multi-layer conduction region
03/27/2001US6207993 Field effect semiconductor device
03/27/2001US6207992 Vertical floating gate transistor with epitaxial channel
03/27/2001US6207988 Semiconductor device and method for fabricating the same
03/27/2001US6207983 Charge transfer device, and driving method and manufacturing method for the same
03/27/2001US6207982 Solid-state image pickup device capable of high-speed transfer of signal charges in horizontal direction
03/27/2001US6207981 Charge-coupled device with potential barrier and charge storage regions
03/27/2001US6207978 Flash memory cells having a modulation doped heterojunction structure
03/27/2001US6207977 Vertical MISFET devices
03/27/2001US6207976 Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
03/27/2001US6207974 Process for manufacture of a p-channel MOS gated device with base implant through the contact window
03/27/2001US6207971 Thin film transistor suitable for use in an active matrix type display and method of fabricating the same
03/27/2001US6207970 Thin-film transistor display devices having composite electrodes
03/27/2001US6207969 Semiconductor thin film and semiconductor device
03/27/2001US6207589 Method of forming a doped metal oxide dielectric film
03/27/2001US6207587 Method for forming a dielectric
03/27/2001US6207543 Metallization technique for gate electrodes and local interconnects
03/27/2001US6207542 Method for establishing ultra-thin gate insulator using oxidized nitride film
03/27/2001US6207540 Method for manufacturing high performance MOSFET device with raised source and drain
03/27/2001US6207530 Dual gate FET and process
03/27/2001US6207523 Methods of forming capacitors DRAM arrays, and monolithic integrated circuits
03/27/2001US6207519 Method of making semiconductor device having double spacer
03/27/2001US6207518 Method of manufacturing semiconductor device
03/27/2001US6207517 Method of fabricating a semiconductor insulation layer and a semiconductor component containing the semiconductor insulation layer
03/27/2001US6207516 Method of fabricating gate oxide layer with different thickness
03/27/2001US6207515 Method of fabricating buried source to shrink chip size in memory array
03/27/2001US6207514 Method for forming borderless gate structures and apparatus formed thereby
03/27/2001US6207513 Spacer process to eliminate corner transistor device
03/27/2001US6207511 Self-aligned trenched-channel lateral-current-flow transistor
03/27/2001US6207509 Method of manufacturing a semiconductor device
03/27/2001US6207508 Method for fabricating a radio frequency power MOSFET device having improved performance characteristics
03/27/2001US6207507 Multi-level flash memory using triple well process and method of making
03/27/2001US6207506 Nonvolatile memory and method for fabricating the same
03/27/2001US6207505 Method for forming high density nonvolatile memories with high capacitive-coupling ratio