| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/10/2001 | US6214673 Process for forming vertical semiconductor device having increased source contact area |
| 04/10/2001 | US6214672 Method for manufacturing two-bit flash memory |
| 04/10/2001 | US6214671 Method of forming dual gate structure |
| 04/10/2001 | US6214670 Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance |
| 04/10/2001 | US6214669 Single-chip contact-less read-only memory (ROM) device and the method for fabricating the device |
| 04/10/2001 | US6214668 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof |
| 04/10/2001 | US6214666 Method of forming a non-volatile memory device |
| 04/10/2001 | US6214665 Semiconductor memory device having memory cells each having a conductive body of booster plate and a method for manufacturing the same |
| 04/10/2001 | US6214664 Method of manufacturing semiconductor device |
| 04/10/2001 | US6214663 Methods of fabricating integrated circuit devices having contact pads which are separated by sidewall spacers |
| 04/10/2001 | US6214654 Method for forming super-steep retrograded channel (SSRC) for CMOS transistor using rapid laser annealing to reduce thermal budget |
| 04/10/2001 | US6214652 Forming thin film transistor layer of polycrystalline material on substrate, masking portion of thin film, conducting germanium implant into unmasked portion of thin film comprising drain offset region |
| 04/10/2001 | US6214643 Stress reduction for flip chip package |
| 04/10/2001 | US6214520 Thermal transfer element for forming multilayer devices |
| 04/10/2001 | US6214243 Process for producing a speed of rotation coriolis sensor |
| 04/10/2001 | US6214107 Method for manufacturing a SiC device |
| 04/10/2001 | US6213869 MOSFET-type device with higher driver current and lower steady state power dissipation |
| 04/10/2001 | US6212956 High output capacitative gas/liquid detector |
| 04/10/2001 | CA2217595C An integrated rf switching cell built in cmos technology and utilizing a high voltage integrated circuit diode with a charge injecting node |
| 04/07/2001 | CA2322080A1 New metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers |
| 04/05/2001 | WO2001024278A1 Trench capacitor with retrograded isolation collar doping to suppress parasitic leakages |
| 04/05/2001 | WO2001024277A1 Circuit arrangement for creating a mos capacitor with a lower voltage dependency and a lower surface area requirement |
| 04/05/2001 | WO2001024276A1 Semiconductor assembly with charge compensation |
| 04/05/2001 | WO2001024275A1 Ferroelectric transistor and use thereof in a memory cell arrangement |
| 04/05/2001 | WO2001024274A1 Thyristor with recovery time voltage surge resistance |
| 04/05/2001 | WO2001024273A1 High-speed lateral bipolar device in soi process |
| 04/05/2001 | WO2001024272A1 Ferroelectric transistor |
| 04/05/2001 | WO2001024271A1 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors |
| 04/05/2001 | WO2001024270A1 Ultrahigh speed image pickup device |
| 04/05/2001 | WO2001024268A1 A nonvolatile memory device with a high work function floating-gate and method of fabrication |
| 04/05/2001 | WO2001024265A1 Nonvolatile memory |
| 04/05/2001 | WO2001024253A1 Semiconductor device with bond pad and test pad |
| 04/05/2001 | WO2001024251A2 Manufacture of trench-gate semiconductor devices |
| 04/05/2001 | WO2001024250A1 Devices with graded top oxide and graded drift region |
| 04/05/2001 | WO2001024246A1 Method of thermally growing a silicon dioxide layer of substantially uniform thickness in a trench |
| 04/05/2001 | WO2001024238A1 Method for forming tungsten silicide film and method for fabricating metal-insulator-semiconductor transistor |
| 04/05/2001 | WO2001024237A1 Integrated circuits with barrier layers and methods of fabricating same |
| 04/05/2001 | WO2001023300A1 Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas |
| 04/05/2001 | WO2000055593A3 Sensor |
| 04/05/2001 | US20010000159 Method of fabricating a semiconductor insulation layer |
| 04/05/2001 | US20010000154 Thin film type monolithic semiconductor device |
| 04/05/2001 | US20010000114 Semiconductor device with wiring layer of low resistance |
| 04/05/2001 | US20010000113 Vertical double diffused MOSFET and method for manufacturing same |
| 04/05/2001 | US20010000112 Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application |
| 04/05/2001 | US20010000111 Field effect transistor having dielectrically isolated sources and drains and method for making same |
| 04/05/2001 | DE19945639A1 Insulated gate bipolar transistor (IGBT) arrangement for improved solar radiation resistance, has semiconductor body provided with p-auxiliary base in which several p-bases are arranged |
| 04/05/2001 | DE19943114A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the |
| 04/05/2001 | DE19942679C1 Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer A method for producing a high-voltage edge termination suitable for a pre-made according to the principle of lateral charge compensation base material wafer |
| 04/05/2001 | DE19941684A1 Halbleiterbauelement als Verzögerungselement und Verwendung eines Halbleiterbauelementes The semiconductor device as a delay element and a semiconductor device using |
| 04/05/2001 | DE19940825A1 Kondensatorstruktur Capacitor structure |
| 04/05/2001 | DE19940381A1 Ferroelektrischer Transistor und Verfahren zu dessen Herstellung Ferroelectric transistor and method of producing the |
| 04/05/2001 | DE19936556A1 Unipolar field effect transistor used in memory components and in digital signal processors comprises a substrate consisting of a super lattice lying between a source contact and a drain contact and a gate structure |
| 04/05/2001 | DE10047659A1 Epitaxial stacking structure comprises a buffer layer formed on a single crystalline substrate made of gallium arsenide, a channel layer and an electron feed layer |
| 04/05/2001 | DE10045340A1 Semiconductor structure used in sensors comprises a deformable crosspiece arrangement on a substrate |
| 04/05/2001 | DE10039173A1 Semiconductor device with bipolar transistor, has emitter and base contact regions which are separated by preset gap, so that current amplification factor of transistor is within specific range |
| 04/05/2001 | DE10038425A1 Manufacture of semiconductor ceramic element, involves arranging alternatively the semiconductor ceramic layer containing nickel and internal electrode layer connected to exterior electrode |
| 04/05/2001 | DE10017090A1 Field effect semiconductor device used as a field effect transistor of the MOS type comprises a stacked gate insulating film and a gate electrode on one surface of a semiconductor layer |
| 04/04/2001 | EP1089345A2 Lateral power field-effect transistor |
| 04/04/2001 | EP1089344A2 Insulated gate field effect transistor and method of fabricating the same |
| 04/04/2001 | EP1089343A2 Semiconductor device with trench gate |
| 04/04/2001 | EP1089341A2 Non-volatile memory |
| 04/04/2001 | EP1089338A2 CMOS circuit of GaAs/Ge on Si substrate |
| 04/04/2001 | EP1089330A2 Lateral field effect transistor |
| 04/04/2001 | EP1088348A1 Semiconductor device comprising a non-volatile memory cell |
| 04/04/2001 | EP1088347A1 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection |
| 04/04/2001 | EP1088346A1 Quantum wire field-effect transistor and method of making the same |
| 04/04/2001 | CN1290422A Electrical circuit arrangement for transforming magnetic field energy into electric field energy |
| 04/04/2001 | CN1290404A Insulated gate bipolar transistor for zero-voltage switching |
| 04/04/2001 | CN1290403A Quasi-mesh gate structure including plugs connecting source regious with backside for lateral RF MOS devices |
| 04/04/2001 | CN1290040A Field-effect transmistors and manufacture thereof |
| 04/04/2001 | CN1290039A Semiconductor device and manufacture thereof |
| 04/03/2001 | US6212104 Flash memory using micro vacuum tube technology |
| 04/03/2001 | US6212100 Nonvolatile memory cell and method for programming and/or verifying the same |
| 04/03/2001 | US6211928 Liquid crystal display and method for manufacturing the same |
| 04/03/2001 | US6211772 Semiconductor composite sensor |
| 04/03/2001 | US6211568 Comprising: an insulating layer on a silicon substrate; a contact hole, a ptsi layer, a tiw layer, a tiw(n) layer, an au layer; very stable diffusion barrier by using a nitrided tiw, tiw(n); improved adhesion strength and step coverage |
| 04/03/2001 | US6211562 Homojunction semiconductor devices with low barrier tunnel oxide contacts |
| 04/03/2001 | US6211558 Surface micro-machined sensor with pedestal |
| 04/03/2001 | US6211555 Semiconductor device with a pair of transistors having dual work function gate electrodes |
| 04/03/2001 | US6211553 Thin-film transistor, a method for manufacturing same, and a liquid crystal display device using the transistor |
| 04/03/2001 | US6211552 Resurf LDMOS device with deep drain region |
| 04/03/2001 | US6211551 Solid-state relay |
| 04/03/2001 | US6211550 Backmetal drain terminal with low stress and thermal resistance |
| 04/03/2001 | US6211549 High breakdown voltage semiconductor device including first and second semiconductor elements |
| 04/03/2001 | US6211547 Semiconductor memory array with buried drain lines and processing methods therefor |
| 04/03/2001 | US6211546 Method of manufacturing nonvolatile semiconductor memory device |
| 04/03/2001 | US6211542 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layer |
| 04/03/2001 | US6211540 Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor |
| 04/03/2001 | US6211536 Semiconductor device having improved crystal orientation |
| 04/03/2001 | US6211535 Method of manufacturing a semiconductor device |
| 04/03/2001 | US6211534 Thin film transistor array and method for fabricating the same |
| 04/03/2001 | US6211533 Solid state imager including TFTs with variably doped contact layer system for reducing TFT leakage current and increasing mobility |
| 04/03/2001 | US6211531 Controllable conduction device |
| 04/03/2001 | US6211530 Sparse-carrier devices and method of fabrication |
| 04/03/2001 | US6211455 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 04/03/2001 | US6211098 Wet oxidation method for forming silicon oxide dielectric layer |
| 04/03/2001 | US6211046 Method of manufacturing a semiconductor device |
| 04/03/2001 | US6211045 Nitrogen dioxide, nitrogen monoxide |
| 04/03/2001 | US6211029 Process of fabricating a bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity |
| 04/03/2001 | US6211028 Twin current bipolar device with hi-lo base profile |