Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2001
04/24/2001US6222251 Variable threshold voltage gate electrode for higher performance mosfets
04/24/2001US6222248 Electronic semiconductor power device with integrated diode
04/24/2001US6222247 Semiconductor resistor that can be withstand high voltages
04/24/2001US6222245 High capacity capacitor and corresponding manufacturing process
04/24/2001US6222241 Method and system for reducing ARC layer removal by providing a capping layer for the ARC layer
04/24/2001US6222240 Salicide and gate dielectric formed from a single layer of refractory metal
04/24/2001US6222236 Protection circuit and method for protecting a semiconductor device
04/24/2001US6222235 Small geometry high voltage semiconductor device
04/24/2001US6222234 Semiconductor device having partially and fully depleted SOI elements on a common substrate
04/24/2001US6222233 Lateral RF MOS device with improved drain structure
04/24/2001US6222232 Asymmetric MOS technology power device
04/24/2001US6222231 Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method
04/24/2001US6222230 Method of making an elevated source/drain with enhanced graded sidewalls for transistor scaling integrated with spacer formation
04/24/2001US6222229 Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
04/24/2001US6222228 Method for reducing gate oxide damage caused by charging
04/24/2001US6222227 Memory cell with self-aligned floating gate and separate select gate, and fabrication process
04/24/2001US6222226 Semiconductor memory device and method for manufacturing the same
04/24/2001US6222224 Erasable and programmable nonvolatile semiconductor memory, semiconductor integrated circuit device having the semiconductor memory and method of manufacturing the semiconductor memory
04/24/2001US6222217 Semiconductor device and manufacturing method thereof
04/24/2001US6222210 Gallium arsenide based complementary pair enhancement mode transistor using a single metallization scheme for both the schottky gate and ohmic contacts
04/24/2001US6222204 Electrode structure and method for fabricating the same
04/24/2001US6222201 Method of forming a novel self-aligned offset thin film transistor and the structure of the same
04/24/2001US6222116 Pre-equilibrium chemical reaction energy converter
04/24/2001US6221788 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate
04/24/2001US6221783 Method of manufacturing a heterojunction bipolar transistor
04/24/2001US6221764 Manufacturing method of semiconductor device
04/24/2001US6221762 Method for fabricating semiconductor device having improved step coverage and low resistivity contacts
04/24/2001US6221744 Method for forming a gate
04/24/2001US6221741 Process of fabricating a semiconductor substrate with semi-insulating polysilicon gettering site layer
04/24/2001US6221737 Method of making semiconductor devices with graded top oxide and graded drift region
04/24/2001US6221724 Method of fabricating an integrated circuit having punch-through suppression
04/24/2001US6221721 Method of manufacturing an insulated trench gate semiconductor device
04/24/2001US6221720 Method of making an electronic device and the same
04/24/2001US6221719 Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions
04/24/2001US6221716 Method of manufacturing a flash memory device
04/24/2001US6221712 Method for fabricating gate oxide layer
04/24/2001US6221708 Field effect transistor assemblies, integrated circuitry, and methods of forming field effect transistors and integrated circuitry
04/24/2001US6221707 Method for fabricating a transistor having a variable threshold voltage
04/24/2001US6221703 Method of ion implantation for adjusting the threshold voltage of MOS transistors
04/24/2001US6221702 Method of fabricating thin film transistor
04/24/2001US6221701 Insulated gate field effect transistor and its manufacturing method
04/24/2001US6221700 Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
04/24/2001US6221699 Method of fabricating an infrared optical bulk channel field effect transistor
04/24/2001US6221688 Diode and method for manufacturing the same
04/24/2001US6221553 Contacting receptor with thermal transfer element having substrate and transfer layer, transfer layer including multicomponent transfer unit, selectively heating transfer element to transfer multicomponent transfer unit to receptor
04/19/2001WO2001028002A1 Semiconductor component, controlled by field effect
04/19/2001WO2001027998A1 Integrated circuit
04/19/2001WO2001027994A1 Method of manufacturing a semiconductor memory device with anti-reflective coating
04/19/2001WO2001027993A1 Semiconductor memory device and its usage
04/19/2001WO2001027981A2 Indium-enhanced bipolar transistor
04/19/2001WO2000034984A3 Transistor with notched gate
04/19/2001US20010000336 Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom
04/19/2001US20010000289 Well isolation bipolar transistor
04/19/2001US20010000288 Semiconductor device and fabrication method thereof
04/19/2001DE19961487A1 Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf A circuit arrangement for forming a MOS capacitor with a low voltage dependency and a small area requirement
04/19/2001DE19949605A1 Acceleration sensor for car air bag control has micromachined stop bars prevents misfunction due to perpendicular acceleration
04/19/2001DE19948901A1 Durch Feldeffekt steuerbares Halbleiterbauelement Field effect-controllable semiconductor component
04/19/2001DE19947020A1 Kompensationsbauelement mit variabler Ladungsbilanz Compensation component with variable charge balance
04/19/2001DE10049148A1 Metamorphic heterojunction bipolar transistor for high power transistor amplifier has heavily doped n type InGaAs layer which represents ohmic contact for emitter
04/19/2001DE10001876C1 Power transistor has overvoltage protection stage that does not work against gate drive source and reliably prevents occurrence of avalanche operating state
04/18/2001EP1093168A2 Field-effect transistor
04/18/2001EP1092239A1 Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry
04/18/2001EP1092238A1 Universal semiconductor wafer for high-voltage semiconductor components
04/18/2001EP1092236A1 Ulsi mos with high dielectric constant gate insulator
04/18/2001CN1292153A Bipolar transistor with insulated gate electrode
04/18/2001CN1292152A Display devices
04/18/2001CN1292150A Low-inductance gate-controlled thyristor
04/18/2001CN1292040A Method of coating and annealing large area glass substrates
04/18/2001CN1291793A Method of making semi conductor device
04/18/2001CN1291785A Manufacturing method of semiconductor device
04/17/2001US6219118 LCD with shield film formed at overlapping portion of bus lines and pixel electrode
04/17/2001US6218895 Multiple well transistor circuits having forward body bias
04/17/2001US6218892 Differential circuits employing forward body bias
04/17/2001US6218889 Semiconductor integrated circuit device, and method of manufacturing the same
04/17/2001US6218888 Insulated gate bipolar transistor device with a current limiting circuit
04/17/2001US6218867 Pass transistor circuit
04/17/2001US6218725 Bipolar transistors with isolation trenches to reduce collector resistance
04/17/2001US6218723 Integrated capacitor with high voltage linearity and low series resistance
04/17/2001US6218718 Spin transistor
04/17/2001US6218717 Semiconductor pressure sensor and manufacturing method therefof
04/17/2001US6218715 MOS transistor for high-speed operation
04/17/2001US6218714 Insulated gate semiconductor device and method of manufacturing the same
04/17/2001US6218713 Logical circuit, flip-flop circuit and storage circuit with multivalued logic
04/17/2001US6218712 Semiconductor device and method of manufacturing same
04/17/2001US6218710 Method to ensure isolation between source-drain and gate electrode using self aligned silicidation
04/17/2001US6218709 Semiconductor device and semiconductor circuit using the same
04/17/2001US6218708 Back-biased MOS device and method
04/17/2001US6218705 Semiconductor device having protective element to conduct current to substrate
04/17/2001US6218704 ESD protection structure and method
04/17/2001US6218703 Semiconductor device with control electrodes formed from semiconductor material
04/17/2001US6218701 Power MOS device with increased channel width and process for forming same
04/17/2001US6218700 Remanent memory device
04/17/2001US6218699 Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdown
04/17/2001US6218698 Apparatus and method for container floating gate cell
04/17/2001US6218690 Transistor having reverse self-aligned structure
04/17/2001US6218689 Method for providing a dopant level for polysilicon for flash memory devices
04/17/2001US6218687 Smart microsensor arrays with silicon-on-insulator readouts for damage control
04/17/2001US6218686 Charge coupled devices
04/17/2001US6218683 Diode
04/17/2001US6218680 Semi-insulating silicon carbide without vanadium domination