Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/24/2001 | US6222251 Variable threshold voltage gate electrode for higher performance mosfets |
04/24/2001 | US6222248 Electronic semiconductor power device with integrated diode |
04/24/2001 | US6222247 Semiconductor resistor that can be withstand high voltages |
04/24/2001 | US6222245 High capacity capacitor and corresponding manufacturing process |
04/24/2001 | US6222241 Method and system for reducing ARC layer removal by providing a capping layer for the ARC layer |
04/24/2001 | US6222240 Salicide and gate dielectric formed from a single layer of refractory metal |
04/24/2001 | US6222236 Protection circuit and method for protecting a semiconductor device |
04/24/2001 | US6222235 Small geometry high voltage semiconductor device |
04/24/2001 | US6222234 Semiconductor device having partially and fully depleted SOI elements on a common substrate |
04/24/2001 | US6222233 Lateral RF MOS device with improved drain structure |
04/24/2001 | US6222232 Asymmetric MOS technology power device |
04/24/2001 | US6222231 Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method |
04/24/2001 | US6222230 Method of making an elevated source/drain with enhanced graded sidewalls for transistor scaling integrated with spacer formation |
04/24/2001 | US6222229 Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability |
04/24/2001 | US6222228 Method for reducing gate oxide damage caused by charging |
04/24/2001 | US6222227 Memory cell with self-aligned floating gate and separate select gate, and fabrication process |
04/24/2001 | US6222226 Semiconductor memory device and method for manufacturing the same |
04/24/2001 | US6222224 Erasable and programmable nonvolatile semiconductor memory, semiconductor integrated circuit device having the semiconductor memory and method of manufacturing the semiconductor memory |
04/24/2001 | US6222217 Semiconductor device and manufacturing method thereof |
04/24/2001 | US6222210 Gallium arsenide based complementary pair enhancement mode transistor using a single metallization scheme for both the schottky gate and ohmic contacts |
04/24/2001 | US6222204 Electrode structure and method for fabricating the same |
04/24/2001 | US6222201 Method of forming a novel self-aligned offset thin film transistor and the structure of the same |
04/24/2001 | US6222116 Pre-equilibrium chemical reaction energy converter |
04/24/2001 | US6221788 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate |
04/24/2001 | US6221783 Method of manufacturing a heterojunction bipolar transistor |
04/24/2001 | US6221764 Manufacturing method of semiconductor device |
04/24/2001 | US6221762 Method for fabricating semiconductor device having improved step coverage and low resistivity contacts |
04/24/2001 | US6221744 Method for forming a gate |
04/24/2001 | US6221741 Process of fabricating a semiconductor substrate with semi-insulating polysilicon gettering site layer |
04/24/2001 | US6221737 Method of making semiconductor devices with graded top oxide and graded drift region |
04/24/2001 | US6221724 Method of fabricating an integrated circuit having punch-through suppression |
04/24/2001 | US6221721 Method of manufacturing an insulated trench gate semiconductor device |
04/24/2001 | US6221720 Method of making an electronic device and the same |
04/24/2001 | US6221719 Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions |
04/24/2001 | US6221716 Method of manufacturing a flash memory device |
04/24/2001 | US6221712 Method for fabricating gate oxide layer |
04/24/2001 | US6221708 Field effect transistor assemblies, integrated circuitry, and methods of forming field effect transistors and integrated circuitry |
04/24/2001 | US6221707 Method for fabricating a transistor having a variable threshold voltage |
04/24/2001 | US6221703 Method of ion implantation for adjusting the threshold voltage of MOS transistors |
04/24/2001 | US6221702 Method of fabricating thin film transistor |
04/24/2001 | US6221701 Insulated gate field effect transistor and its manufacturing method |
04/24/2001 | US6221700 Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities |
04/24/2001 | US6221699 Method of fabricating an infrared optical bulk channel field effect transistor |
04/24/2001 | US6221688 Diode and method for manufacturing the same |
04/24/2001 | US6221553 Contacting receptor with thermal transfer element having substrate and transfer layer, transfer layer including multicomponent transfer unit, selectively heating transfer element to transfer multicomponent transfer unit to receptor |
04/19/2001 | WO2001028002A1 Semiconductor component, controlled by field effect |
04/19/2001 | WO2001027998A1 Integrated circuit |
04/19/2001 | WO2001027994A1 Method of manufacturing a semiconductor memory device with anti-reflective coating |
04/19/2001 | WO2001027993A1 Semiconductor memory device and its usage |
04/19/2001 | WO2001027981A2 Indium-enhanced bipolar transistor |
04/19/2001 | WO2000034984A3 Transistor with notched gate |
04/19/2001 | US20010000336 Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom |
04/19/2001 | US20010000289 Well isolation bipolar transistor |
04/19/2001 | US20010000288 Semiconductor device and fabrication method thereof |
04/19/2001 | DE19961487A1 Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf A circuit arrangement for forming a MOS capacitor with a low voltage dependency and a small area requirement |
04/19/2001 | DE19949605A1 Acceleration sensor for car air bag control has micromachined stop bars prevents misfunction due to perpendicular acceleration |
04/19/2001 | DE19948901A1 Durch Feldeffekt steuerbares Halbleiterbauelement Field effect-controllable semiconductor component |
04/19/2001 | DE19947020A1 Kompensationsbauelement mit variabler Ladungsbilanz Compensation component with variable charge balance |
04/19/2001 | DE10049148A1 Metamorphic heterojunction bipolar transistor for high power transistor amplifier has heavily doped n type InGaAs layer which represents ohmic contact for emitter |
04/19/2001 | DE10001876C1 Power transistor has overvoltage protection stage that does not work against gate drive source and reliably prevents occurrence of avalanche operating state |
04/18/2001 | EP1093168A2 Field-effect transistor |
04/18/2001 | EP1092239A1 Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry |
04/18/2001 | EP1092238A1 Universal semiconductor wafer for high-voltage semiconductor components |
04/18/2001 | EP1092236A1 Ulsi mos with high dielectric constant gate insulator |
04/18/2001 | CN1292153A Bipolar transistor with insulated gate electrode |
04/18/2001 | CN1292152A Display devices |
04/18/2001 | CN1292150A Low-inductance gate-controlled thyristor |
04/18/2001 | CN1292040A Method of coating and annealing large area glass substrates |
04/18/2001 | CN1291793A Method of making semi conductor device |
04/18/2001 | CN1291785A Manufacturing method of semiconductor device |
04/17/2001 | US6219118 LCD with shield film formed at overlapping portion of bus lines and pixel electrode |
04/17/2001 | US6218895 Multiple well transistor circuits having forward body bias |
04/17/2001 | US6218892 Differential circuits employing forward body bias |
04/17/2001 | US6218889 Semiconductor integrated circuit device, and method of manufacturing the same |
04/17/2001 | US6218888 Insulated gate bipolar transistor device with a current limiting circuit |
04/17/2001 | US6218867 Pass transistor circuit |
04/17/2001 | US6218725 Bipolar transistors with isolation trenches to reduce collector resistance |
04/17/2001 | US6218723 Integrated capacitor with high voltage linearity and low series resistance |
04/17/2001 | US6218718 Spin transistor |
04/17/2001 | US6218717 Semiconductor pressure sensor and manufacturing method therefof |
04/17/2001 | US6218715 MOS transistor for high-speed operation |
04/17/2001 | US6218714 Insulated gate semiconductor device and method of manufacturing the same |
04/17/2001 | US6218713 Logical circuit, flip-flop circuit and storage circuit with multivalued logic |
04/17/2001 | US6218712 Semiconductor device and method of manufacturing same |
04/17/2001 | US6218710 Method to ensure isolation between source-drain and gate electrode using self aligned silicidation |
04/17/2001 | US6218709 Semiconductor device and semiconductor circuit using the same |
04/17/2001 | US6218708 Back-biased MOS device and method |
04/17/2001 | US6218705 Semiconductor device having protective element to conduct current to substrate |
04/17/2001 | US6218704 ESD protection structure and method |
04/17/2001 | US6218703 Semiconductor device with control electrodes formed from semiconductor material |
04/17/2001 | US6218701 Power MOS device with increased channel width and process for forming same |
04/17/2001 | US6218700 Remanent memory device |
04/17/2001 | US6218699 Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdown |
04/17/2001 | US6218698 Apparatus and method for container floating gate cell |
04/17/2001 | US6218690 Transistor having reverse self-aligned structure |
04/17/2001 | US6218689 Method for providing a dopant level for polysilicon for flash memory devices |
04/17/2001 | US6218687 Smart microsensor arrays with silicon-on-insulator readouts for damage control |
04/17/2001 | US6218686 Charge coupled devices |
04/17/2001 | US6218683 Diode |
04/17/2001 | US6218680 Semi-insulating silicon carbide without vanadium domination |