| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/17/2001 | US6218678 Semiconductor device |
| 04/17/2001 | US6218677 III-V nitride resonant tunneling |
| 04/17/2001 | US6218608 Pre-equilibrium chemical reaction energy converter |
| 04/17/2001 | US6218311 Post-etch treatment of a semiconductor device |
| 04/17/2001 | US6218276 Silicide encapsulation of polysilicon gate and interconnect |
| 04/17/2001 | US6218265 Process for fabricating a semiconductor non-volatile memory device with shallow trench isolation (STI) |
| 04/17/2001 | US6218260 Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
| 04/17/2001 | US6218254 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| 04/17/2001 | US6218251 Asymmetrical IGFET devices with spacers formed by HDP techniques |
| 04/17/2001 | US6218250 Method and apparatus for minimizing parasitic resistance of semiconductor devices |
| 04/17/2001 | US6218249 MOS transistor having shallow source/drain junctions and low leakage current |
| 04/17/2001 | US6218248 Semiconductor device and method for fabricating the same |
| 04/17/2001 | US6218233 Thin film capacitor having an improved bottom electrode and method of forming the same |
| 04/17/2001 | US6218228 DMOS device structure, and related manufacturing process |
| 04/17/2001 | US6218226 Method of forming an ESD protection device |
| 04/17/2001 | US6218223 Process for producing electrode for semiconductor element and semiconductor device having the electrode |
| 04/17/2001 | US6218222 Method of manufacturing a semiconductor device with a schottky junction |
| 04/17/2001 | US6218220 Method for fabricating thin film transistor |
| 04/17/2001 | US6218219 Semiconductor device and fabrication method thereof |
| 04/17/2001 | US6218218 Method for reducing gate oxide damage caused by charging |
| 04/17/2001 | US6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same |
| 04/17/2001 | US6218206 Method for producing thin film transistor and thin film transistor using the same |
| 04/17/2001 | US6218175 Nano-devices using block-copolymers |
| 04/12/2001 | WO2001026227A1 Thyristor arrangement with turnoff protection |
| 04/12/2001 | WO2001026160A1 Semiconductor device combining the advantages of massive and soi architecture, and method for making same |
| 04/12/2001 | WO2001026159A1 Lateral rf mos device with improved breakdown voltage |
| 04/12/2001 | WO2001026156A1 Nonvolatile memory |
| 04/12/2001 | WO2001026137A2 Three dimensional device integration method and integrated device |
| 04/12/2001 | US20010000245 Conductive sidewall couples to the gate of the gated lateral bipolar transitor and to a retrograded, highly doped bottom layer of the single crystalline semiconductor structure; both bipolar junction transistors (BJT) and metal oxide action |
| 04/12/2001 | US20010000243 Forming a thin film of an amorphous or polycrystalline material of small particle size on a substrate by irradiating with an energy beam of adjusted cross-section to convert the particles to polycrystalline and larger size |
| 04/12/2001 | US20010000218 Semiconductor device |
| 04/12/2001 | DE19947117A1 Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung Ferroelectric transistor and its use in a memory cell arrangement |
| 04/12/2001 | DE19947028A1 Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit Thyristor surge capacity in the recovery time |
| 04/12/2001 | DE19946437A1 Ferroelektrischer Transistor Ferroelectric transistor |
| 04/12/2001 | DE19941664A1 Floating-Gate-Speicherzelle Floating-gate memory cell |
| 04/12/2001 | DE19940362A1 Metal oxide semiconductor transistor comprises a sink doped with a first conductivity type in semiconductor substrate, an epitaxial layer and source/drain regions of a second conductivity type and channel region arranged in epitaxial layer |
| 04/12/2001 | DE10043183A1 Semiconductor device e.g., metal oxide semiconductor field effect transistor includes silicon on insulator substrate with semiconductor layer, isolation films, gate electrode, intermediate layer isolation film and filled contact hole |
| 04/11/2001 | EP1091617A2 Semiconductor device |
| 04/11/2001 | EP1091567A2 Charge transfer device, solid state image pickup device using the same, and control method |
| 04/11/2001 | EP1091419A1 Integrated potentiometer and its manufacturing process |
| 04/11/2001 | EP1091418A2 NROM cell with self-aligned programming and erasure areas |
| 04/11/2001 | EP1091417A1 Method for fabricating a semiconductor device with a gate-all-around and device formed thereby |
| 04/11/2001 | EP1091416A2 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same |
| 04/11/2001 | EP1091415A2 A V-shaped floating gate for a memory cell |
| 04/11/2001 | EP1091414A2 MOSFET with tapered gate and method of manufacturing it |
| 04/11/2001 | EP1091413A2 Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet |
| 04/11/2001 | EP1091411A2 A solid-state image pickup device |
| 04/11/2001 | EP1091408A1 Non-volatile memory cell with a single level of polysilicon |
| 04/11/2001 | EP1091397A2 Input/output buffer with silicide layer and method of manufacturing |
| 04/11/2001 | EP1091393A1 Electrode for semiconductor device and its manufacturing method |
| 04/11/2001 | EP1091392A2 A method for forming a contoured floating gate cell |
| 04/11/2001 | EP1091202A2 Capacitive pressure sensor |
| 04/11/2001 | EP1091201A2 Pressure sensor unit |
| 04/11/2001 | EP1090429A2 Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| 04/11/2001 | EP1090428A1 Punch-through diode and method of manufacturing the same |
| 04/11/2001 | EP1090427A1 Ferroelectric field effect transistor having compositionally graded ferroelectric material and method of making the same |
| 04/11/2001 | EP1090426A1 A switching device |
| 04/11/2001 | EP1090425A1 Independently programmable memory segments in isolated n-wells within a pmos eeprom array and method therefor |
| 04/11/2001 | EP1090423A1 Thin film capacitor element with protection elements |
| 04/11/2001 | EP1090418A1 Method for producing schottky diodes |
| 04/11/2001 | EP1090416A2 Collimated sputtering of semiconductor and other films |
| 04/11/2001 | EP1090415A1 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement |
| 04/11/2001 | CN1291298A Active matrix substrate and liquid crystal display comprising the same |
| 04/11/2001 | CN1291065A 半导体装置 Semiconductor device |
| 04/11/2001 | CN1290968A Semiconductor structure and its producing method |
| 04/10/2001 | US6215716 Static memory cell having independent data holding voltage |
| 04/10/2001 | US6215702 Method of maintaining constant erasing speeds for non-volatile memory cells |
| 04/10/2001 | US6215699 Nonvolatile semiconductor storage device having main block and redundancy block formed on different wells |
| 04/10/2001 | US6215595 Apparatus and method for laser radiation |
| 04/10/2001 | US6215193 Multichip modules and manufacturing method therefor |
| 04/10/2001 | US6215172 Grinding technique for integrated circuits |
| 04/10/2001 | US6215170 Structure for single conductor acting as ground and capacitor plate electrode using reduced area |
| 04/10/2001 | US6215168 Doubly graded junction termination extension for edge passivation of semiconductor devices |
| 04/10/2001 | US6215167 Power semiconductor device employing field plate and manufacturing method thereof |
| 04/10/2001 | US6215163 Semiconductor device and method of manufacturing the same where the nitrogen concentration in an oxynitride insulating layer is varied |
| 04/10/2001 | US6215160 Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the same |
| 04/10/2001 | US6215156 Electrostatic discharge protection device with resistive drain structure |
| 04/10/2001 | US6215155 Silicon-on-insulator configuration which is compatible with bulk CMOS architecture |
| 04/10/2001 | US6215154 Thin film transistor and method of fabricating the same |
| 04/10/2001 | US6215153 MOSFET and method for fabricating the same |
| 04/10/2001 | US6215152 MOSFET having self-aligned gate and buried shield and method of making same |
| 04/10/2001 | US6215150 Vertically integrated semiconductor device |
| 04/10/2001 | US6215149 Trenched gate semiconductor device |
| 04/10/2001 | US6215148 NROM cell with improved programming, erasing and cycling |
| 04/10/2001 | US6215146 Semiconductor device and manufacturing method thereof |
| 04/10/2001 | US6215145 Dense SOI flash memory array structure |
| 04/10/2001 | US6215140 Electrically programmable non-volatile memory cell configuration |
| 04/10/2001 | US6215138 Semiconductor device and its fabrication method |
| 04/10/2001 | US6215130 Thin film transistors |
| 04/10/2001 | US6214744 Method for manufacturing semiconductor device capable of improving etching rate ratio of insulator to refractory metal |
| 04/10/2001 | US6214741 Method of fabricating a bit line of flash memory |
| 04/10/2001 | US6214724 Forming gate insulating film on semiconductor substrate, forming conductive metal oxide film on gate insulating film to make stacked-layer film, forming gate electrode by etching stacked-layer film |
| 04/10/2001 | US6214705 Method for fabricating a gate eletrode |
| 04/10/2001 | US6214693 Process for the production of semiconductor device |
| 04/10/2001 | US6214686 Spatially offset deep trenches for high density DRAMS |
| 04/10/2001 | US6214684 Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator |
| 04/10/2001 | US6214681 Utilizing semiconductor and germanium sources to provide thin film above top surface of substrate, reducing germanium source while utilizing semiconductor source to form buffer layer, oxidizing buffer layer, providing spacers on side walls |
| 04/10/2001 | US6214679 Forming silicon germanium alloy on substrate, forming cobalt film on said alloy, heating to temperature greater than 850 degrees c. for period of time less than 20 seconds to form cobaltdigermanosilicide film |
| 04/10/2001 | US6214677 Method of fabricating self-aligned ultra short channel |
| 04/10/2001 | US6214675 Method for fabricating a merged integrated circuit device |