H01L 23 - Details of semiconductor or other solid state devices

Patents for H01L 23 - Details of semiconductor or other solid state devices (226,155)
11/2004
11/25/2004	US20040233637 Slim type packaging structure with high heat dissipation
11/25/2004	US20040233636 Apparatus employing heat sink
11/25/2004	US20040233633 Structures for coolers with two-way air convection functionality
11/25/2004	US20040233610 Capacitor constructions
11/25/2004	US20040233035 Methods for manufacturing resistors using a sacrificial layer
11/25/2004	US20040233010 Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection
11/25/2004	US20040232982 RF front-end module for wireless communication devices
11/25/2004	US20040232937 Semiconductor integrated circuit device
11/25/2004	US20040232910 Test structures for estimating dishing and erosion effects in copper damascene technology
11/25/2004	US20040232572 Optical device and method for manufacturing the same, and electronic apparatus
11/25/2004	US20040232566 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232565 Circuit device resistant to cracking and having sealing layer resistant to sagging and method for making the same
11/25/2004	US20040232564 Method for fabricating semiconductor package with multi-layer metal bumps
11/25/2004	US20040232562 System and method for increasing bump pad height
11/25/2004	US20040232560 Flip chip assembly process and substrate used therewith
11/25/2004	US20040232559 Interconnect method for directly connected stacked integrated circuits
11/25/2004	US20040232558 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232557 Semiconductor device having a metal insulator metal capacitor
11/25/2004	US20040232556 Integrated circuit inductor with integrated vias
11/25/2004	US20040232555 Semiconductor device with reduced interconnect capacitance
11/25/2004	US20040232554 Semiconductor device with effective heat-radiation
11/25/2004	US20040232553 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
11/25/2004	US20040232551 Electrode structure for use in an integrated circuit
11/25/2004	US20040232549 Semiconductor device and manufacturing method thereof
11/25/2004	US20040232548 Semiconductor package
11/25/2004	US20040232545 Semiconductor device
11/25/2004	US20040232544 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232543 Electronic component with a plastic housing and method for production thereof
11/25/2004	US20040232542 Carrier with metal bumps for semiconductor die packages
11/25/2004	US20040232541 Semiconductor package suitable for high voltage applications
11/25/2004	US20040232540 Electronic device and method of manufacturing the same, circuit board, and electronic instrument
11/25/2004	US20040232539 Rearrangemet sheet, semiconductor device and method of manufacturing thereof
11/25/2004	US20040232537 Method and structure for interfacing electronic devices
11/25/2004	US20040232536 Semiconductor device comprising magnetic element
11/25/2004	US20040232535 Microelectromechanical device packages with integral heaters
11/25/2004	US20040232534 Packaging component and semiconductor package
11/25/2004	US20040232532 Epoxy resin composition and semiconductor device using thereof
11/25/2004	US20040232531 Semiconductor package device and method for fabricating the same
11/25/2004	US20040232530 Pre-applied thermoplastic reinforcement for electronic components
11/25/2004	US20040232529 Semiconductor package having filler metal of gold/silver/copper alloy
11/25/2004	US20040232528 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232527 Semiconductor device
11/25/2004	US20040232526 Lead frame for stacked semiconductor packages, stacked semiconductor packages using it, and fabrication method thereof
11/25/2004	US20040232524 Scribe street width reduction by deep trench and shallow saw cut
11/25/2004	US20040232520 High-density metal capacitor using dual-damascene copper interconnect
11/25/2004	US20040232519 Electronic device and method of testing and of manufacturing
11/25/2004	US20040232518 Semiconductor memory device
11/25/2004	US20040232517 Semiconductor wafer, semiconductor device, and process for manufacturing the semiconductor device
11/25/2004	US20040232509 Rail schottky device and method of making
11/25/2004	US20040232497 Semiconductor device and method for manufacturing the same
11/25/2004	US20040232496 Use of voids between elements in semiconductor structures for isolation
11/25/2004	US20040232492 Charge-device model electrostatic discharge protection using active device for CMOS circuits
11/25/2004	US20040232485 Semiconductor device
11/25/2004	US20040232468 Barrier layers for protecting metal oxides from hydrogen degradation
11/25/2004	US20040232467 TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
11/25/2004	US20040232462 Semiconductor device manufacturing method and semiconductor device
11/25/2004	US20040232458 Ferroelectric memory and method of fabricating the same
11/25/2004	US20040232452 Module component
11/25/2004	US20040232448 Layout style in the interface between input/output (I/O) cell and bond pad
11/25/2004	US20040232447 Die package for connection to a substrate
11/25/2004	US20040232446 Semiconductor integrated circuit device and manufacture thereof
11/25/2004	US20040232445 Semiconductor device, layout method and apparatus and program
11/25/2004	US20040232444 Semiconductor device with dummy electrode
11/25/2004	US20040232442 Semiconductor device and a method of manufacturing the same and a mounting structure of a semiconductor device
11/25/2004	US20040232414 Interconnect routing over semiconductor for editing through the back side of an integrated circuit
11/25/2004	US20040232210 Pre-applied fluxing underfill composition having pressure sensitive adhesive properties
11/25/2004	US20040232000 A bright tin or bright lead-free tin-alloy having no whiskers after 4 months storage at 52 degrees C. and 98% relative humidity; preferred alloying elements are nickel, copper, bismuth, zinc, silver or indium
11/25/2004	US20040231997 Batch processing method for processing a number of substrates simultaneously; substrate holders which have heating medium flow passages regulate the temperature of the holding portions as a whole; for embedding interconnects in the surface of a substrate like a semiconductor
11/25/2004	US20040231888 High speed circuit board and method for fabrication
11/25/2004	US20040231879 Semiconductor device package
11/25/2004	US20040231872 EMI shielding for electronic component packaging
11/25/2004	US20040231827 Heat dissipation device with interlocking fin plates
11/25/2004	US20040231826 Active heat sink
11/25/2004	US20040231796 Structure and method for measuring the etching speed
11/25/2004	US20040231777 Baking a polysiloxane coating (especially on a semiconductor wafer) in an atmosphere that includes a catalytic agent gas containing a mixture of ammonia and water, at 300-400 degrees C. to form and inter-level insulating film with a low dielectric constant
11/25/2004	US20040231758 Silver-containing particles, method and apparatus of manufacture, silver-containing devices made therefrom
11/25/2004	DE4129654B4 Rückseitenkontakt für einen Halbleiterkörper Back contact for a semiconductor body
11/25/2004	DE19914305B4 Elektronische Vorrichtung Electronic device
11/25/2004	DE19738588B4 Elektrisches Bauelement mit einer Umhüllung und mit einem in der Umhüllung angeordneten Anschlußbereich und Verfahren zur Herstellung eines solchen elektrischen Bauelements Electrical component with a casing and with, disposed in the enclosure terminating region and methods for manufacturing such electrical component
11/25/2004	DE19732807B4 Integriertes Schaltungsbauelement The integrated circuit device
11/25/2004	DE10360967A1 Anwendungsspezifische Wärmesenkenanordnung Application Specific heat sink assembly
11/25/2004	DE10360966A1 CTE-Angepasste, Anwendungsspezifische Wärmesenkenanordnung CTE Custom, Application Specific heat sink assembly
11/25/2004	DE10360866A1 Anwendungsspezifische Vorrichtung zum Ableiten von Wärme aus mehreren elektronischen Komponenten Application-specific device for dissipating heat from a plurality of electronic components
11/25/2004	DE10319782A1 Chip carrier element especially for luminescent and laser diode chips, has recessed receiving area adjacent to the chip mounting surface to connect the chip
11/25/2004	DE10319539A1 Schutzstruktur zum Schutz elektrostatischer Entladung und ingetrierte Schaltung Protection structure to protect electrostatic discharge and total trated circuit
11/25/2004	DE10319538A1 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung A semiconductor device and method of manufacturing a semiconductor device
11/25/2004	DE10319470A1 Metall-Kunststoff-Verbundbauteil und Verfahren zu dessen Herstellung Metal-plastic composite component and process for its preparation
11/25/2004	DE10318915A1 Voltage supply track arrangement for use with a number of standard cell series in a semiconductor component, wherein the width of the voltage tracks is matched to the length of the cell series
11/25/2004	DE10318688A1 Verfahren zum Trennen der elektrischen Verbindungsknoten bei IC-Frames und Verfahren zur Herstellung eines elektronischen Bauteils sowie von Frames dafür A method for separating the electrical connection with IC node frames and methods for manufacturing an electronic component as well as frames for
11/25/2004	DE10318424A1 Semiconductor arrangement has active heat generating structure, at least one recess in rear of substrate opposite to surface coating; several recesses can be formed adjacent to each other in substrate
11/25/2004	DE10318078A1 Protecting wiring on wafers/chips comprises covering wafer with wiring on its whole surface with organic layer to protect wiring from corrosion and oxidation and form sealed coating
11/25/2004	DE10314596B3 Metal oxide semiconductor-compensation transistor component has a semiconductor body with a rear side with deep macropores or trenches vertically aligned to source electrode structures on the front side and to the sink regions
11/25/2004	DE10205122B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
11/25/2004	DE102004020833A1 Material mit niedriger Wärmeausdehnung und hoher Wärmeleitfähigkeit auf Kupferbasis sowie Verfahren zum Herstellen desselben Of the same material of low thermal expansion and high thermal conductivity copper-based as well as methods for preparing
11/25/2004	DE102004016705A1 Verfahren zur Ausbildung einer Öffnung für einen Kontakt in einem Halbleiterbauelement A method of forming an opening for a contact in a semiconductor device
11/25/2004	CA2525664A1 Card with embedded ic and electrochemical cell
11/24/2004	EP1480271A1 Method of analysis of the quality of contacts and vias in multi-level metallisation fabrication processes of semiconductor devices, and corresponding test chip architecture
11/24/2004	EP1480270A2 Packaging component and semiconductor package
11/24/2004	EP1480269A1 Printed Circuit Board with improved cooling of electrical component
11/24/2004	EP1480268A2 Housing for defined filling

1 ... 1443 1444 1445 1446 1447 1448 1449 1450 1451 1452 1453 1454 1455 1456 1457 1458 1459 1460 1461 1462 1463 ... 2262