Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/1999
09/01/1999EP0938596A1 Apparatus for reducing polymer deposition on substrate support
09/01/1999EP0871557B1 Method of producing metal quantum dots
09/01/1999EP0812473B1 Arrangement of electronic components on a carrier strip
09/01/1999EP0715771B1 SiC FIELD-EFFECT TRANSISTORS AND METHOD OF MANUFACTURING THEM
09/01/1999CN2336476Y Hot air type flat IC soldering table
09/01/1999CN2336475Y Tin ball implanting machine for IC element
09/01/1999CN1227670A Process for manufacturing an infrared-emitting luminescent diode
09/01/1999CN1227669A Semiconductor memory and method for manufacturing the same
09/01/1999CN1227668A Method and apparatus for etching a semiconductor wafer
09/01/1999CN1227659A A stablilized polysilicon resistor and a method for manufacturing it
09/01/1999CN1227648A Chip card, process for manufacturing a chip card and semiconductor chip for use in a chip card
09/01/1999CN1227638A Antireflective coatings for photoresist resin compositions
09/01/1999CN1227637A Positive photoresist composition containing a 2,4-dinitro-1-naphthol
09/01/1999CN1227518A Workpiece inspection and handling
09/01/1999CN1227418A Field effect transistor and method of its manufacture
09/01/1999CN1227416A Semiconductor devices and manufacturing methods thereof
09/01/1999CN1227415A Dynamic random storage unit device and its producing method
09/01/1999CN1227414A Semiconductor integrated circuit device and method of arranging functional cell
09/01/1999CN1227413A Semiconductor device and method of fabricating the same
09/01/1999CN1227410A Method for producing lower electrode of capacitor
09/01/1999CN1227409A Method and structure for contact to copper metallization in insulating via on semiconductor
09/01/1999CN1227408A Improved techniques for forming trench capacitors in integrated circuit
09/01/1999CN1227407A Method for producing double voltage MOS transistor
09/01/1999CN1227406A Semiconductor device and method of manufacturing the same
09/01/1999CN1227405A Anodizing method and apparatus and semiconductor substrate manufacturing method
09/01/1999CN1227404A Method for producing semiconductor device
09/01/1999CN1227403A Method of forming semiconductor device
09/01/1999CN1227402A Barrier layer and its producing method
09/01/1999CN1227400A Method for preparing silicon material on insulator with aluminium nitride as insulating buried layer
09/01/1999CN1227355A Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof
09/01/1999CN1227351A Test head for microstructures with interface
09/01/1999CN1227284A Anodizing apparatus and method and porous substrate
09/01/1999CN1227279A Etching composition and use thereof
09/01/1999CN1227152A Chemical mechanical polishing apparatus and method of chemical mechanical polishing
09/01/1999CN1044948C Mehtod for fabricating stack capacitor of semiconductor device
09/01/1999CN1044947C Method for forming charge storage electrodes of semiconductor device
08/1999
08/31/1999US5946600 Metal layer over dielectric, applying a barrier over aluminum and aluminum over barrier, applying photoresist layer, exposure and oxidation
08/31/1999US5946599 Method of manufacturing a semiconductor IC device
08/31/1999US5946598 Silicon substrate with oxide layer for transistors formed by vapor deposition
08/31/1999US5946597 Semiconductor chip mounting method
08/31/1999US5946596 Method for preventing polycide line deformation by polycide hardening
08/31/1999US5946595 Titanium silicide on semiconductor substrate for electronics
08/31/1999US5946594 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
08/31/1999US5946593 Semiconductor device manufacturing method
08/31/1999US5946592 Combined in-situ high density plasma enhanced chemical vapor deposition (HDPCVD) and chemical mechanical polishing (CMP) process to form an intermetal dielectric layer with a stopper layer embedded therein
08/31/1999US5946591 Method of making a semiconductor device having a flat surface
08/31/1999US5946589 Photoresists and removal without void formation
08/31/1999US5946588 Growing an oxide layer in ozone in subatomspheric pressure with heat
08/31/1999US5946586 Method of manufacturing a glass-covered semiconductor device
08/31/1999US5946585 Hydrogen ion implantation in substrates and insulation
08/31/1999US5946584 Method for manufacturing a dielectric isolation substrate
08/31/1999US5946583 Method for preventing alignment marks from disappearing after chemical mechanical polishing
08/31/1999US5946582 Method of making an InP-based heterojunction bipolar transistor with reduced base-collector capacitance
08/31/1999US5946581 Method of manufacturing a semiconductor device by doping an active region after formation of a relatively thick oxide layer
08/31/1999US5946580 Method to form elevated source/drain with solid phase diffused source/drain extension for MOSFET
08/31/1999US5946579 Stacked mask integration technique for advanced CMOS transistor formation
08/31/1999US5946578 Method of fabricating semiconductor device having source/drain layer raised from substrate surface
08/31/1999US5946577 Method of manufacturing semiconductor device
08/31/1999US5946576 Method of fabricating a semiconductor ready-only memory device used for permanent storage of multi-level coded data
08/31/1999US5946575 Method for manufacturing low breakdown voltage MOS and high breakdown voltage MOS
08/31/1999US5946574 Method for forming a diode protection circuit connecting to MOS device
08/31/1999US5946573 Forming an integrated circuits with electrostatic discharge protection device
08/31/1999US5946572 Method of manufacturing a semiconductor device having recessed gate structures
08/31/1999US5946571 Method of forming a capacitor
08/31/1999US5946570 Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer
08/31/1999US5946569 DRAM contact process by localized etch-stop removal
08/31/1999US5946568 Self aligned method of fabricating a DRAM with improved capacitance
08/31/1999US5946567 Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits
08/31/1999US5946566 Method of making a smaller geometry high capacity stacked DRAM device
08/31/1999US5946565 Semiconductor integrated circuit device and process for manufacturing the same
08/31/1999US5946564 Methods of forming integrated circuitry and integrated circuitry
08/31/1999US5946563 Semiconductor device and method of manufacturing the same
08/31/1999US5946562 Polysilicon thin film transistors with laser-induced solid phase crystallized polysilicon channel
08/31/1999US5946561 Semiconductor device and method for forming the same
08/31/1999US5946560 Transistor and method of forming the same
08/31/1999US5946559 Method of forming a field effect transistor
08/31/1999US5946558 Method of making ROM components
08/31/1999US5946557 Method of manufacturing a semiconductor device having dummy patterns and an upper insulating layer having cavities
08/31/1999US5946556 Melting wax, covering a layer eith curable resin, curing and vaporization for integrated circuits
08/31/1999US5946554 Method of producing resin-sealed electronic device
08/31/1999US5946553 Process for manufacturing a semiconductor package with bi-substrate die
08/31/1999US5946551 Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
08/31/1999US5946548 Method for manufacturing a MISFET device where the conductive film has a thickness
08/31/1999US5946545 Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit
08/31/1999US5946543 Semiconductor wafer evaluating method and semiconductor device manufacturing method
08/31/1999US5946542 Multilayer element with passivation layer on semiconductor wafer, insulation layer and using plasma deposition chamber using nitrogen, oxygen and silicon wafers
08/31/1999US5946477 Positioning/wiring method for flip-chip semiconductor device
08/31/1999US5946409 Pick-up apparatus and method for semiconductor devices
08/31/1999US5946408 Pick-up apparatus and method for semiconductor chips
08/31/1999US5946254 Semiconductor memory device of hierarchical bit-line architecture using crosspoint-type memory cell
08/31/1999US5946243 Integrated circuit
08/31/1999US5946240 Nonvolatile semiconductor memory device and method of manufacturing the same
08/31/1999US5946232 Flash memory device and method that operates a memory cell array in sector units
08/31/1999US5946230 Nonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the same
08/31/1999US5946229 Semiconductor device having device supplying voltage higher than power supply voltage
08/31/1999US5946228 Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
08/31/1999US5946227 Magnetoresistive random access memory with shared word and digit lines
08/31/1999US5946224 Ferroelectric memory device, a method for read out stored data and a method for standing-by
08/31/1999US5946219 Method and system for configuring an array of logic devices
08/31/1999US5946214 Computer implemented method for estimating fabrication yield for semiconductor integrated circuit including memory blocks with redundant rows and/or columns